Ultra-Low Leakage, Energy-Efficient Digital Integrated Circuit and System Design

The advances of the complementary metal-oxide-semiconductor (CMOS) technology manufacturing and design over the years have enabled a diverse range of applications across the power consumption, performance, and area (PPA) spectra. Many of the recent and prospective applications rely on the availability of energy-autonomous, miniaturized systems, i.e., ultra-low power (ULP) VLSI systems, which are generally characterized by extreme resource limitations. Some examples of applications are wireless sensing platforms, body-area sensor networks (BASN), biomedical and implantable devices, wearables, hearables, and monitors. Within the context of such applications, the key requirements are long lifetime and miniaturized size (sub-/millimeter-scale). In order to enable both requirements, energy-efficiency is the key metric. It allows for extended battery lifetime and operation with the energy that can be harvested from the environment, and it limits the size (volume) of the energy sources utilized to power these systems. Ultra-low voltage (ULV) operation is a key technique in which the VDD of circuits is reduced from nominal to near or below the threshold voltage of the transistor. It is a powerful knob that has been largely exploited by designers in order to achieve ultra-low power consumption and high energy-efficiency in CMOS. Existing ULP VLSI systems typically operate at a lower supply voltage thereby reducing their energy consumption by one to two orders of magnitude in order to enable the aforementioned applications. While supply voltage scaling is a promising measure for achieving low power and reducing energy consumption, it brings up several challenges. One critical issue is the leakage energy dissipated by the devices, which is magnified in portion to the total energy consumption at ULV. The reason is that, as VDD scales from nominal to near-threshold and sub-threshold, transistors become increasingly slower and they accumulate more leakage (i.e., static) power over longer cycle times. This energy waste accounts for a significant portion of the system's total energy consumption, offsets the gains provided by voltage scaling, defines the minimum energy per operation, and poses a practical limit for the system's energy-efficiency. This thesis presents selected research works on ultra-low leakage, energy-efficient digital integrated circuit design. More specifically, it describes novel and key techniques for minimizing the energy waste of idle/underutilized and always-on hardware. The main goal of such techniques is to push the envelope of energy-efficiency in energy-autonomous, miniaturized VLSI systems. Such techniques are applied to key building blocks of emerging mobile and embedded computing devices resulting in state-of-the-art energy-efficiencies

Design of low-voltage power efficient frequency dividers in folded MOS current mode logic

In this paper we propose a methodology to design high-speed, power-efficient static frequency dividers based on the low-voltage Folded MOS Current Mode Logic (FMCML) approach. A modeling strategy to analyze the dependence of propagation delay and power consumption on the bias currents of the divide-by-2 (DIV2) cell is introduced. We demonstrate that the behavior of the FMCML DIV2 cell is different both from the one of the conventional MCML DFF (D-type Flip-Flop) and from FMCML DFF without a level shifter. Then an analytical strategy to optimize the divider in different design scenarios: maximum speed, minimum power-delay product (PDP) or minimum energy-delay product (EDP) is presented. The possibility to scale the bias currents through the divider stages without affecting the speed performance is also investigated. The proposed analytical approach allows to gain a deep insight into the circuit behavior and to comprehensively optimize the different design tradeoffs. The derived models and design guidelines are validated against transistor level simulations referring to a commercial 28nm FDSOI CMOS process. Different divide-by-8 circuits following different optimization strategies have been designed in the same 28nm CMOS technology showing the effectiveness of the proposed methodology

Fine-grained Energy and Thermal Management using Real-time Power Sensors

With extensive use of battery powered devices such as smartphones, laptops an

Power Efficient Data-Aware SRAM Cell for SRAM-Based FPGA Architecture

The design of low-power SRAM cell becomes a necessity in today\u27s FPGAs, because SRAM is a critical component in FPGA design and consumes a large fraction of the total power. The present chapter provides an overview of various factors responsible for power consumption in FPGA and discusses the design techniques of low-power SRAM-based FPGA at system level, device level, and architecture levels. Finally, the chapter proposes a data-aware dynamic SRAM cell to control the power consumption in the cell. Stack effect has been adopted in the design to reduce the leakage current. The various peripheral circuits like address decoder circuit, write/read enable circuits, and sense amplifier have been modified to implement a power-efficient SRAM-based FPGA

Chapter One – An Overview of Architecture-Level Power- and Energy-Efficient Design Techniques

Power dissipation and energy consumption became the primary design constraint for almost all computer systems in the last 15 years. Both computer architects and circuit designers intent to reduce power and energy (without a performance degradation) at all design levels, as it is currently the main obstacle to continue with further scaling according to Moore's law. The aim of this survey is to provide a comprehensive overview of power- and energy-efficient “state-of-the-art” techniques. We classify techniques by component where they apply to, which is the most natural way from a designer point of view. We further divide the techniques by the component of power/energy they optimize (static or dynamic), covering in that way complete low-power design flow at the architectural level. At the end, we conclude that only a holistic approach that assumes optimizations at all design levels can lead to significant savings.Peer ReviewedPostprint (published version

高密度・高速動作可能なSTT-MRAMへ向けたp-MTJのスイッチング過渡現象とアレイ設計指針に関する研究

Tohoku University遠藤哲郎課

Power Management for Deep Submicron Microprocessors

As VLSI technology scales, the enhanced performance of smaller transistors comes at the expense of increased power consumption. In addition to the dynamic power consumed by the circuits there is a tremendous increase in the leakage power consumption which is further exacerbated by the increasing operating temperatures. The total power consumption of modern processors is distributed between the processor core, memory and interconnects. In this research two novel power management techniques are presented targeting the functional units and the global interconnects. First, since most leakage control schemes for processor functional units are based on circuit level techniques, such schemes inherently lack information about the operational profile of higher-level components of the system. This is a barrier to the pivotal task of predicting standby time. Without this prediction, it is extremely difficult to assess the value of any leakage control scheme. Consequently, a methodology that can predict the standby time is highly beneficial in bridging the gap between the information available at the application level and the circuit implementations. In this work, a novel Dynamic Sleep Signal Generator (DSSG) is presented. It utilizes the usage traces extracted from cycle accurate simulations of benchmark programs to predict the long standby periods associated with the various functional units. The DSSG bases its decisions on the current and previous standby state of the functional units to accurately predict the length of the next standby period. The DSSG presents an alternative to Static Sleep Signal Generation (SSSG) based on static counters that trigger the generation of the sleep signal when the functional units idle for a prespecified number of cycles. The test results of the DSSG are obtained by the use of a modified RISC superscalar processor, implemented by SimpleScalar, the most widely accepted open source vehicle for architectural analysis. In addition, the results are further verified by a Simultaneous Multithreading simulator implemented by SMTSIM. Leakage saving results shows an increase of up to 146% in leakage savings using the DSSG versus the SSSG, with an accuracy of 60-80% for predicting long standby periods. Second, chip designers in their effort to achieve timing closure, have focused on achieving the lowest possible interconnect delay through buffer insertion and routing techniques. This approach, though, taxes the power budget of modern ICs, especially those intended for wireless applications. Also, in order to achieve more functionality, die sizes are constantly increasing. This trend is leading to an increase in the average global interconnect length which, in turn, requires more buffers to achieve timing closure. Unconstrained buffering is bound to adversely affect the overall chip performance, if the power consumption is added as a major performance metric. In fact, the number of global interconnect buffers is expected to reach hundreds of thousands to achieve an appropriate timing closure. To mitigate the impact of the power consumed by the interconnect buffers, a power-efficient multi-pin routing technique is proposed in this research. The problem is based on a graph representation of the routing possibilities, including buffer insertion and identifying the least power path between the interconnect source and set of sinks. The novel multi-pin routing technique is tested by applying it to the ISPD and IBM benchmarks to verify the accuracy, complexity, and solution quality. Results obtained indicate that an average power savings as high as 32% for the 130-nm technology is achieved with no impact on the maximum chip frequency

Circuit design for embedded memory in low-power integrated circuits

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2012.Cataloged from PDF version of thesis.Includes bibliographical references (p. 141-152).This thesis explores the challenges for integrating embedded static random access memory (SRAM) and non-volatile memory-based on ferroelectric capacitor technology-into lowpower integrated circuits. First considered is the impact of process variation in deep-submicron technologies on SRAM, which must exhibit higher density and performance at increased levels of integration with every new semiconductor generation. Techniques to speed up the statistical analysis of physical memory designs by a factor of 100 to 10,000 relative to the conventional Monte Carlo Method are developed. The proposed methods build upon the Importance Sampling simulation algorithm and efficiently explore the sample space of transistor parameter fluctuation. Process variation in SRAM at low-voltage is further investigated experimentally with a 512kb 8T SRAM test chip in 45nm SOI CMOS technology. For active operation, an AC coupled sense amplifier and regenerative global bitline scheme are designed to operate at the limit of on current and off current separation on a single-ended SRAM bitline. The SRAM operates from 1.2 V down to 0.57 V with access times from 400ps to 3.4ns. For standby power, a data retention voltage sensor predicts the mismatch-limited minimum supply voltage without corrupting the contents of the memory. The leakage power of SRAM forces the chip designer to seek non-volatile memory in applications such as portable electronics that retain significant quantities of data over long durations. In this scenario, the energy cost of accessing data must be minimized. This thesis presents a ferroelectric random access memory (FRAM) prototype that addresses the challenges of sensing diminishingly small charge under conditions favorable to low access energy with a time-to-digital sensing scheme. The 1 Mb IT1C FRAM fabricated in 130 nm CMOS operates from 1.5 V to 1.0 V with corresponding access energy from 19.2 pJ to 9.8 pJ per bit. Finally, the computational state of sequential elements interspersed in CMOS logic, also restricts the ability to power gate. To enable simple and fast turn-on, ferroelectric capacitors are integrated into the design of a standard cell register, whose non-volatile operation is made compatible with the digital design flow. A test-case circuit containing ferroelectric registers exhibits non-volatile operation and consumes less than 1.3 pJ per bit of state information and less than 10 clock cycles to save or restore with no minimum standby power requirement in-between active periods.by Masood Qazi.Ph.D