Towards Design and Analysis For High-Performance and Reliable SSDs

NAND Flash-based Solid State Disks have many attractive technical merits, such as low power consumption, light weight, shock resistance, sustainability of hotter operation regimes, and extraordinarily high performance for random read access, which makes SSDs immensely popular and be widely employed in different types of environments including portable devices, personal computers, large data centers, and distributed data systems. However, current SSDs still suffer from several critical inherent limitations, such as the inability of in-place-update, asymmetric read and write performance, slow garbage collection processes, limited endurance, and degraded write performance with the adoption of MLC and TLC techniques. To alleviate these limitations, we propose optimizations from both specific outside applications layer and SSDs\u27 internal layer. Since SSDs are good compromise between the performance and price, so SSDs are widely deployed as second layer caches sitting between DRAMs and hard disks to boost the system performance. Due to the special properties of SSDs such as the internal garbage collection processes and limited lifetime, traditional cache devices like DRAM and SRAM based optimizations might not work consistently for SSD-based cache. Therefore, for the outside applications layer, our work focus on integrating the special properties of SSDs into the optimizations of SSD caches. Moreover, our work also involves the alleviation of the increased Flash write latency and ECC complexity due to the adoption of MLC and TLC technologies by analyzing the real work workloads

Performance and Reliability Analysis of Cross-Layer Optimizations of NAND Flash Controllers

NAND flash memories are becoming the predominant technology in the implementation of mass storage systems for both embedded and high-performance applications. However, when considering data and code storage in non-volatile memories (NVMs), such as NAND flash memories, reliability and performance be- come a serious concern for systems' designer. Designing NAND flash based systems based on worst-case scenarios leads to waste of resources in terms of performance, power consumption, and storage capacity. This is clearly in contrast with the request for run-time reconfigurability, adaptivity, and resource optimiza- tion in nowadays computing systems. There is a clear trend toward supporting differentiated access modes in flash memory controllers, each one setting a differentiated trade-off point in the performance-reliability optimization space. This is supported by the possibility of tuning the NAND flash memory performance, reli- ability and power consumption acting on several tuning knobs such as the flash programming algorithm and the flash error correcting code. However, to successfully exploit these degrees of freedom, it is mandatory to clearly understand the effect the combined tuning of these parameters have on the full NVM sub-system. This paper performs a comprehensive quantitative analysis of the benefits provided by the run-time reconfigurability of an MLC NAND flash controller through the combined effect of an adaptable memory programming circuitry coupled with run-time adaptation of the ECC correction capability. The full non- volatile memory (NVM) sub-system is taken into account, starting from the characterization of the low level circuitry to the effect of the adaptation on a wide set of realistic benchmarks in order to provide the readers a clear figure of the benefit this combined adaptation would provide at the system leve

낸드 플래시 기반 저장장치의 수명 향상을 위한 계층 교차 최적화 기법

학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2016. 2. 김지홍.Replacing HDDs with NAND flash-based storage devices (SSDs) has been one of the major challenges in modern computing systems especially in regards to better performance and higher mobility. Although uninterrupted semiconductor process scaling and multi-leveling techniques lower the price of SSDs to the comparable level of HDDs, the decreasing lifetime of NAND flash memory, as a side effect of recent advanced device technologies, is emerging as one of the major barriers to the wide adoption of SSDs in high-performance computing systems. In this dissertation, we propose new cross-layer optimization techniques to extend the lifetime (in particular, endurance) of NAND flash memory. Our techniques are motivated by our key observation that erasing a NAND block with a lower voltage or at a slower speed can significantly improve NAND endurance. However, using a lower voltage in erase operations causes adverse side effects on other NAND characteristics such as write performance and retention capability. The main goal of the proposed techniques is to improve NAND endurance without affecting the other NAND requirements. We first present Dynamic Erase Voltage and Time Scaling (DeVTS), a unified framework to enable a system software to exploit the tradeoff relationship between the endurance and erase voltages/times of NAND flash memory. DeVTS includes erase voltage/time scaling and write capability tuning, each of which brings a different impact on the endurance, performance, and retention capabilities of NAND flash memory. Second, we propose a lifetime improvement technique which takes advantage of idle times between write requests when erasing a NAND block with a slower speed or when writing data to a NAND block erased with a lower voltage. We have implemented a DeVTS-enabled FTL, called dvsFTL, which optimally adjusts the erase voltage/time and write performance of NAND devices in an automatic fashion. Our experimental results show that dvsFTL can improve NAND endurance by 62%, on average, over DeVTS-unaware FTL with a negligible decrease in the overall write performance. Third, we suggest a comprehensive lifetime improvement technique which exploits variations of the retention requirements as well as the performance requirement of SSDs when writing data to a NAND block erased with a lower voltage. We have implemented dvsFTL+, an extended version of dvsFTL, which fully utilizes DeVTS by accurately predicting the write performance and retention requirements during run times. Our experimental results show that dvsFTL+ can further improve NAND endurance by more than 50% over dvsFTL while preserving all the NAND requirements. Lastly, we present a reliability management technique which prevents retention failure problems when aggressive retention-capability tuning techniques are employed in real environments. Our measurement results show that the proposed technique can recover corrupted data from retention failures up to 23 times faster over existing data recovery techniques. Furthermore, it can successfully recover severely retention-failed data, such as ones experienced 8 times longer retention times than the retention-time specification, that were not recoverable with the existing technique. Based on the evaluation studies for the developed lifetime improvement techniques, we verified that the cross-layer optimization approach has a significant impact on extending the lifetime of NAND flash-based storage devices. We expect that our proposed techniques can positively contribute to not only the wide adoption of NAND flash memory in datacenter environments but also the gradual acceleration of using flash as main memory.Chapter 1 Introduction 1 1.1 Motivation 1 1.2 Dissertation Goals 3 1.3 Contributions 4 1.4 Dissertation Structure 5 Chapter 2 Background 7 2.1 Threshold Voltage Window of NAND Flash Memory 7 2.2 NAND Program Operation 10 2.3 Related Work 11 2.3.1 System-Level SSD Lifetime Improvement Techniques 12 2.3.2 Device-Level Endurance-Enhancing Technique 15 2.3.3 Cross-Layer Optimization Techniques Exploiting NAND Tradeoffs 17 Chapter 3 Dynamic Erase Voltage and Time Scaling 20 3.1 Erase Voltage and Time Scaling 22 3.1.1 Motivation 22 3.1.2 Erase Voltage Scaling 23 3.1.3 Erase Time Scaling 26 3.2 Write Capability Tuning 28 3.2.1 Write Performance Tuning 29 3.2.2 Retention Capability Tuning 30 3.2.3 Disturbance Resistance Tuning 33 3.3 NAND Endurance Model 34 Chapter 4 Lifetime Improvement Technique Using Write-Performance Tuning 39 4.1 Design and Implementation of dvsFTL 40 4.1.1 Overview 40 4.1.2 Write-Speed Mode Selection 41 4.1.3 Erase Voltage Mode Selection 44 4.1.4 Erase Speed Mode Selection 46 4.1.5 DeVTS-wPT Aware FTL Modules 47 4.2 Experimental Results 50 4.2.1 Experimental Settings 50 4.2.2 Workload Characteristics 53 4.2.3 Endurance Gain Analysis 54 4.2.4 Overall Write Throughput Analysis 56 4.2.5 Detailed Analysis 58 Chapter 5 Lifetime Improvement Technique Using Retention-Capability Tuning 60 5.1 Design and Implementation of dvsFTL+ 62 5.1.1 Overview 62 5.1.2 Retention Requirement Prediction 64 5.1.3 Maximization of Endurance Benefit 66 5.1.4 Minimization of Reclaim Overhead 68 5.2 Experimental Results 69 5.2.1 Experimental Settings 69 5.2.2 Workload Characteristics 70 5.2.3 Endurance Gain Analysis 72 5.2.4 NAND Requirements Analysis 73 5.2.5 Detailed Analysis of Retention-Time Predictor 76 5.2.6 Detailed Analysis of Endurance Gain 83 Chapter 6 Reliability Management Technique for NAND Flash Memory 87 6.1 Overview 89 6.2 Motivation 91 6.2.1 Limitations of the Existing Retention-Error Management Policy 91 6.2.2 Limitations of the Existing Retention-Failure Recovery Technique 92 6.3 Retention Error Recovery Technique 95 6.3.1 Charge Movement Model 95 6.3.2 A Selective Error-Correction Procedure 99 6.3.3 Implementation 100 6.4 Experimental Results 103 Chapter 7 Conclusions 108 7.1 Summary and Conclusions 108 7.2 Future Work 110 7.2.1 Lifetime Improvement Technique Exploiting The Other NAND Tradeoffs 110 7.2.2 Development of Extended Techniques for DRAM-Flash Hybrid Main Memory Systems 111 7.2.3 Development of Specialized SSDs 112 Bibliography 114 초 록 122Docto