Nano Semiconducting Device Based Design of Voltage Controlled Oscillator

The fast advancement of the CMOS innovation has made conceivable the improvement of littler correspondence frameworks with expanding usefulness. Yet, as CMOS innovation approaches the Nano-scale, critical deviations in the framework execution may be found because of either interconnect or gadget between and intra-kick the bucket parameter varieties. For the most part, in Nano-CMOS innovation, blemishes in simple and computerized circuits are ordinarily alluded as process' parameter variability. The requirement for executing ease, completely incorporated RF remote handsets has spurred the broad utilization CMOS innovation. Nonetheless, in the specific case for voltage controlled oscillators (VCO) where steadily stringent particulars regarding stage commotion must be accomplished, the configuration of the on-chip LC tank is a testing undertaking, where completely playing point of the real advances qualities must be pushed to about its points of confinement. To overcome stage commotion impediments emerging from the low quality element of incorporated inductors, advancement outline strategies are generally utilized. Low power CMOS and LC Tank VCOs are demonstrated. Their basic and symmetric structure can give low power advertisement low clamor operation. The proposed VCOs can have distinctive focus frequencies

Advanced CMOS Integrated Circuit Design and Application

The recent development of various application systems and platforms, such as 5G, B5G, 6G, and IoT, is based on the advancement of CMOS integrated circuit (IC) technology that enables them to implement high-performance chipsets. In addition to development in the traditional fields of analog and digital integrated circuits, the development of CMOS IC design and application in high-power and high-frequency operations, which was previously thought to be possible only with compound semiconductor technology, is a core technology that drives rapid industrial development. This book aims to highlight advances in all aspects of CMOS integrated circuit design and applications without discriminating between different operating frequencies, output powers, and the analog/digital domains. Specific topics in the book include: Next-generation CMOS circuit design and application; CMOS RF/microwave/millimeter-wave/terahertz-wave integrated circuits and systems; CMOS integrated circuits specially used for wireless or wired systems and applications such as converters, sensors, interfaces, frequency synthesizers/generators/rectifiers, and so on; Algorithm and signal-processing methods to improve the performance of CMOS circuits and systems

Using Variable Width RF Integrated Inductors for Quality Factor Optimization

Part 20: Electronics: RF ApplicationsInternational audienceThe advancement of CMOS technology led to the integration of more complex functions. In the particular of wireless transceivers, integrated LC tanks are becoming popular both for VCOs and integrated filters [1]. For RF applications the main challenge is still the design of integrated inductors with the maximum quality factor. For that purpose, tapered, i.e., variable width inductors have been proposed in the literature. In this paper, analytical expressions for the determination the pi-model parameters, for the characterization of variable width integrated inductors are proposed. The expressions rely exclusively on geometrical and technological parameters, thus granting the rapid adaptation of the model to different technologies. The results obtained with the model are compared against simulation with ASITIC, showing errors below 10%. The model is then integrated into an optimization procedure where inductors with a quality factor improvement in the order of 20-30% are obtained, when compared with fixed width inductors

Investigation on LIGA-MEMS and on-chip CMOS capacitors for a VCO application

Modern communication systems require high performance radio frequency (RF) and microwave circuits and devices. This is becoming increasingly challenging to realize in the content of cost/size constraints. Integrated circuits (ICs) satisfy the cost/size requirement, but performance is often sacri¯ced. For instance, high quality factor (Q factor) passive components are difficult to achieve in standard silicon-based IC processes.In recent years, microelectromechanical systems (MEMS) devices have been receiving increasing attention as a possible replacement for various on-chip passive elements, offering potential improvement in performance while maintaining high levels of integration. Variable capacitors (varactor) are common elements used in various applications. One of the MEMS variable capacitors that has been recently developed is built using deep X-ray lithography (as part of the LIGA process). This type of capacitor exhibits high quality factor at microwave frequencies.The complementary metal oxide semiconductor (CMOS) technology dominates the silicon IC process. CMOS becomes increasingly popular for RF applications due to its advantages in level of integration, cost and power consumption. This research demonstrates a CMOS voltage-controlled oscillator (VCO) design which is used to investigate methods, advantages and problems in integrating LIGA-MEMS devices to CMOS RF circuits, and to evaluate the performance of the LIGA-MEMS variable capacitor in comparison with the conventional on-chip CMOS varactor. The VCO was designed and fabricated using TSMC 0.18 micron CMOS technology. The core of the VCO, including transistors, resistors, and on-chip inductors was designed to connect to either an on-chip CMOS varactor or an off-chip LIGA-MEMS capacitor to oscillate between 2.6 GHz and 2.7 GHz. Oscillator phase noise analysis is used to compare the performance between the two capacitors. The fabricated VCO occupied an area of 1 mm^2.This initial attempt at VCO fabrication did not produce a functional VCO, so the performance of the capacitors with the fabricated VCO could not be tested. However, the simulation results show that with this LIGA-MEMS capacitor, a 6.4 dB of phase noise improvement at 300 kHz offset from the carrier is possible in a CMOS-based VCO design

Survey on individual components for a 5 GHz receiver system using 130 nm CMOS technology

La intención de esta tesis es recopilar información desde un punto de vista general sobre los diferentes tipos de componentes utilizados en un receptor de señales a 5 GHz utilizando tecnología CMOS. Se ha realizado una descripción y análisis de cada uno de los componentes que forman el sistema, destacando diferentes tipos de configuraciones, figuras de mérito y otros parámetros. Se muestra una tabla resumen al final de cada sección, comparando algunos diseños que se han ido presentando a lo largo de los años en conferencias internacionales de la IEEE.The intention of this thesis is to gather information from an overview point about the different types of components used in a 5 GHz receiver using CMOS technology. A review of each of the components that form the system has been made, highlighting different types of configurations, figure of merits and parameters. A summary table is shown at the end of each section, comparing many designs that have been presented over the years at international conferences of the IEEE.Departamento de Ingeniería Energética y FluidomecánicaGrado en Ingeniería en Electrónica Industrial y Automátic

An RF LC Q-enhanced CMOS iter using integrated inductors with layout optimization

Dissertação apresentada para obtenção do Grau de Mestre em Engenharia Electrotécnica e de Computadores, pela Universidade Nova de Lisboa, Faculdade de Ciências e TecnologiaThe advancement of CMOS technology led to the integration of more complex functions in a single chip. In the particular of wireless transceivers, integrated LC tanks are becoming popular both for VCOs and integrated lters. The design of a 2nd order CMOS 0.13 m Q-enhanced integrated LC lter for a frequency of 2.44 GHz is presented. The intent of this lter is to create a circuit for integrated wireless receiver and minimize the requirement for o -chip passive lter components, reducing the overall component count and size of wireless devices and systems. For RF applications the main challenge is still the design of integrated inductors with the maximum quality factor. For that purpose, tapered, i.e, variable width inductors have been introduced in the literature. In this work, a characterization of variable width integrated inductors is proposed. This inductor model is then integrated into an optimization procedure where inductors with a quality factor improvement are obtained