Multi-Layer Ultra-Wideband Wilkinson Combiner for Arrays

This work investigates an ultra-wideband (UWB), compact, and multilayer Wilkinson power combiners for tightly coupled array (TCA) designs. The Wilkinson topology designs encompass UHF, L-, and S-bands. These combiners integrate into an experimental UWB TCA. The experimental UWB TCA divides into twenty-four columns, with each column containing eight unit cells, and each cell one-inch square. The Wilkinson power combiner contains eight input ports and one output port. Twenty-four combiners mount to the TCA’s back. The combiner condenses the two-dimensional array (8x24) to a one-dimensional or linear array (1x24). The proposed Wilkinson power combiner possesses a multilayer design reducing common mode current problems caused by vias. The Wilkinson combiner covers 500 MHz to 3.28 GHz and provides a 6.56:1 bandwidth. It achieves tight impedance matching through stripline coupling. The proposed design provides minimal phase error, equal power reception, and low power handling. The power combiner interfaces with an experimental UWB TCA antenna through SMP snap connectors. This paper examines signal combining efficiency to provide minimum path loss. This paper also examines interconnecting transmission lines traversing multiple laminate layers. This necessitates proper current handling because interconnects influence impedance, transmission, and isolation. Integrating a via picket fence improves port isolation and reduces propagating parallel plate modes. The proposed combiner design achieved the following important attributes at or better than the minimum required specifications. The measured combiner design successfully demonstrated -7.8dB minimum return loss for input and -18.1dB return loss for the outputs; 10.92dB ± 1.28dB insertion loss; -12.2db minimum isolation; ± 1.38° minimal phase error; ± 0.57dB power reception imbalance. The proposed UWB combiner design condensed the four-stage Wilkinson footprint to consume no more than 0.4in² (258mm²) surface area, weighed only 1.5oz (42.5g), and less than a half-inch thick

Scalable Control and Measurement of Gate-Defined Quantum Dot Systems

There is currently a worldwide effort towards the realisation of large-scale quantum computers that exploit quantum phenomena for information processing. While these computing systems could potentially redefine the technological landscape, harnessing quantum effects is challenging due to their inherently fragile nature and the experimentally demanding environments in which they arise. In order for quantum computation to be viable it is first necessary to demonstrate the operation of two-level quantum systems (qubits) which have long coherence times, can be quickly read out, and can be controlled with high fidelity. Focusing on these key requirements, this thesis presents four experiments towards scalable solid state quantum computing using gate-defined quantum dot devices based on gallium arsenide (GaAs) heterostructures. The first experiment investigates a phonon emission process that limits the charge coherence in GaAs and potentially complicates the microwave control of multi-qubit devices. We show that this microwave analogy to Raman spectroscopy can provide a means of detecting the unique phonon spectral density created by a nanoscale device. Experimental results are compared to a theoretical model based on a non-Markovian master equation and approaches to suppressing electron-phonon coupling are discussed. The second experiment demonstrates a technique involving in-situ gate electrodes coupled to lumped-element resonators to provide high-bandwidth dispersive read-out of the state of a double quantum dot. We characterise the charge sensitivity of this method in the few-electron regime and benchmark its performance against quantum point contact charge sensors. The third experiment implements a low-loss, chip-level frequency multiplexing scheme for the readout of scaled-up spin qubit arrays. Dispersive gate-sensing is realised in combination with charge detection based on two radio frequency quantum point contacts to perform multiplexed readout of a double quantum dot in the few-electron regime. Demonstration of a 10-channel multiplexing device is achieved and limitations in scaling spin qubit readout to large numbers using multiplexed channels discussed. The final experiment ties previously presented results together by realising a micro-architecture for controlling and reading out qubits during the execution of a quantum algorithm. The basic principles of this architecture are demonstrated via the manipulation of a semiconductor qubit using control pulses that are cryogenically routed using a high-electron mobility transistor switching matrix controlled by a field programmable gate array. Finally, several technical results are also presented including the development of printed circuit board solutions to allow the high-frequency measurement of nanoscale devices at cryogenic temperatures and the design of on-chip interconnects used to suppress electromagnetic crosstalk in high-density spin qubit device architectures

Aspectos de interconectividade dos moduladores de polímero

Orientador: Hugo Enrique Hernández-FigueroaTese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de ComputaçãoResumo: As interconexões ópticas e elétricas são de grande interese na area de encapsulamento de circuitos integrados híbridos fotônicos. Baixas perdas e banda larga são necessárias para o desenvolvimento de novas tecnologías na área. Nesta tese apresentan-se as seguintes contribuições originais: uma metodologia do modelamento de interconexões elétricas em encapsulamento de moduladores de polímero eletro-óptico, um dispositivo óptico compacto de banda larga para interconectar a plataforma de silício sobre isolante com a plataforma de filmes finos de polímero sobre silícioAbstract: Electrical and optical interconnects are of great interest for photonic integrated circuits with hybrid platforms. Low loss and wide band are essential for the development of new technologies in this area. In this thesis, we present the following original contributions: a methodology for modeling electrical ceramic interconnects inside an electrooptic polymer packaging, and a compact low-loss optical interconnect for the silicon-on-insulator platform to the thin-film polymer on silicon platformDoutoradoTelecomunicações e TelemáticaDoutor em Engenharia Elétrica07/2014-36CAPE

Nouvelles Topologies des diviseurs de puissance, balun et déphaseurs en bandes RF et millimétiques, apport des lignes à ondes lentes

L objectif de cette thèse a été premièrement de réaliser des dispositifs passifs intégrés à base de lignes à onde lentes nommées S-CPW (pour Slow-wave CoPlanar Waveguide ) aux fréquences millimétriques. Plusieurs technologies CMOS ou BiCMOS ont été utilisées: CMOS 65 nm et 28 nm ainsi que BiCMOS 55 nm. Deux baluns, le premier basé sur une topologie de rat-race et le second basé sur un diviseur de puissance de Wilkinson modifié, ainsi qu un inverseur de phase, ont été réalisés et mesurés dans la technologie CMOS 65 nm. Les résultats expérimentaux obtenus se situent à l état de l art en termes de performances électriques. Un coupler hybride et un diviseur de puissance avec des sorties en phase sans isolation ont été conçus en technologie CMOS 28 nm. Les simulations montrent de très bonnes performances pour des dispositifs compacts. Les circuits sont en cours de fabrication et pourront très bientôt être caractérisés. Ensuite, une nouvelle topologie de diviseurs de puissance, avec sorties en phase et isolé a été développée, offrant une grande flexibilité et compacité en comparaison des diviseurs de puissance traditionnels. Cette topologie est parfaitement adaptée pour les technologies silicium. Comme preuve de concept, deux diviseurs de puissance avec des caractéristiques différentes ont été réalisés en technologie PCB microruban à la fréquence de 2.45 GHz. Un composent a été conçu à 60 GHz en technologie BiCMOS 55 nm utilisant des lignes S CPW. Les simulations prouvent que le dispositif est faibles pertes, adapté et isolé. Les circuits sont également en cours de fabrication. Enfin, deux topologies de reflection type phase shifter ont été développées, la première dans la bande RF et la seconde aux fréquences millimétrique. Pour la bande RF, le déphasage atteint plus de 360 avec une figure de mérite très élevée en comparaison avec l état de l art. En ce qui concerne le déphaseur dans la bande millimétrique, la simulation montre un déphasage de 341 avec également une figure de mérite élevée.The first purpose of this work was the use of slow-wave coplanar waveguides (S CPW) to achieve various passive components with the aim to show their great potential and interest at millimetre-waves. Several CMOS or BiCMOS technologies were used: CMOS 65 nm and 28 nm, and BiCMOS 55 nm. Two baluns, one based on a rat-race topology and the other based on a modified Wilkinson power divider, and a phase inverter, were achieved and measured in a 65 nm CMOS technology. State-of-the-art results were achieved. A branch-line coupler and an in phase power divider without isolation were designed in a 28 nm CMOS technology. Really good performances are expected for these compact devices being yet under fabrication. Then, a new topology of in phase and isolated power divider was developed, leading to more flexibility and compactness, well suited to millimetre-wave frequencies. Two power dividers with different characteristics were realized in a PCB technology at 2.45 GHz by using microstrip lines, as a proof-of-concept. After that, a power divider was designed at the working frequency of 60 GHz in the 55 nm BiCMOS technology with S CPWs. The simulation results showed a low loss, full-matched and isolated component, which is also under fabrication and will be characterized as soon as possible. Finally, two new topologies of reflection type phase shifters were presented, one for the RF band and one for the millimetre-wave one. For the one in RF band, the phase shift can reach more than 360 with a great figure-of-merit as compared to the state-of-the-art. Concerning the phase shifter in the millimetre-wave band, the simulation results show a phase shift of 341 with also a high figure-of-merit.SAVOIE-SCD - Bib.électronique (730659901) / SudocGRENOBLE1/INP-Bib.électronique (384210012) / SudocGRENOBLE2/3-Bib.électronique (384219901) / SudocSudocFranceF