Cross-Layer Pathfinding for Off-Chip Interconnects

Off-chip interconnects for integrated circuits (ICs) today induce a diverse design space, spanning many different applications that require transmission of data at various bandwidths, latencies and link lengths. Off-chip interconnect design solutions are also variously sensitive to system performance, power and cost metrics, while also having a strong impact on these metrics. The costs associated with off-chip interconnects include die area, package (PKG) and printed circuit board (PCB) area, technology and bill of materials (BOM). Choices made regarding off-chip interconnects are fundamental to product definition, architecture, design implementation and technology enablement. Given their cross-layer impact, it is imperative that a cross-layer approach be employed to architect and analyze off-chip interconnects up front, so that a top-down design flow can comprehend the cross-layer impacts and correctly assess the system performance, power and cost tradeoffs for off-chip interconnects. Chip architects are not exposed to all the tradeoffs at the physical and circuit implementation or technology layers, and often lack the tools to accurately assess off-chip interconnects. Furthermore, the collaterals needed for a detailed analysis are often lacking when the chip is architected; these include circuit design and layout, PKG and PCB layout, and physical floorplan and implementation. To address the need for a framework that enables architects to assess the system-level impact of off-chip interconnects, this thesis presents power-area-timing (PAT) models for off-chip interconnects, optimization and planning tools with the appropriate abstraction using these PAT models, and die/PKG/PCB co-design methods that help expose the off-chip interconnect cross-layer metrics to the die/PKG/PCB design flows. Together, these models, tools and methods enable cross-layer optimization that allows for a top-down definition and exploration of the design space and helps converge on the correct off-chip interconnect implementation and technology choice. The tools presented cover off-chip memory interfaces for mobile and server products, silicon photonic interfaces, 2.5D silicon interposers and 3D through-silicon vias (TSVs). The goal of the cross-layer framework is to assess the key metrics of the interconnect (such as timing, latency, active/idle/sleep power, and area/cost) at an appropriate level of abstraction by being able to do this across layers of the design flow. In additional to signal interconnect, this thesis also explores the need for such cross-layer pathfinding for power distribution networks (PDN), where the system-on-chip (SoC) floorplan and pinmap must be optimized before the collateral layouts for PDN analysis are ready. Altogether, the developed cross-layer pathfinding methodology for off-chip interconnects enables more rapid and thorough exploration of a vast design space of off-chip parallel and serial links, inter-die and inter-chiplet links and silicon photonics. Such exploration will pave the way for off-chip interconnect technology enablement that is optimized for system needs. The basis of the framework can be extended to cover other interconnect technology as well, since it fundamentally relates to system-level metrics that are common to all off-chip interconnects

Heterogeneous 2.5D integration on through silicon interposer

© 2015 AIP Publishing LLC. Driven by the need to reduce the power consumption of mobile devices, and servers/data centers, and yet continue to deliver improved performance and experience by the end consumer of digital data, the semiconductor industry is looking for new technologies for manufacturing integrated circuits (ICs). In this quest, power consumed in transferring data over copper interconnects is a sizeable portion that needs to be addressed now and continuing over the next few decades. 2.5D Through-Si-Interposer (TSI) is a strong candidate to deliver improved performance while consuming lower power than in previous generations of servers/data centers and mobile devices. These low-power/high-performance advantages are realized through achievement of high interconnect densities on the TSI (higher than ever seen on Printed Circuit Boards (PCBs) or organic substrates), and enabling heterogeneous integration on the TSI platform where individual ICs are assembled at close proximity

US Microelectronics Packaging Ecosystem: Challenges and Opportunities

The semiconductor industry is experiencing a significant shift from traditional methods of shrinking devices and reducing costs. Chip designers actively seek new technological solutions to enhance cost-effectiveness while incorporating more features into the silicon footprint. One promising approach is Heterogeneous Integration (HI), which involves advanced packaging techniques to integrate independently designed and manufactured components using the most suitable process technology. However, adopting HI introduces design and security challenges. To enable HI, research and development of advanced packaging is crucial. The existing research raises the possible security threats in the advanced packaging supply chain, as most of the Outsourced Semiconductor Assembly and Test (OSAT) facilities/vendors are offshore. To deal with the increasing demand for semiconductors and to ensure a secure semiconductor supply chain, there are sizable efforts from the United States (US) government to bring semiconductor fabrication facilities onshore. However, the US-based advanced packaging capabilities must also be ramped up to fully realize the vision of establishing a secure, efficient, resilient semiconductor supply chain. Our effort was motivated to identify the possible bottlenecks and weak links in the advanced packaging supply chain based in the US.Comment: 22 pages, 8 figure

Investigation into yield and reliability enhancement of TSV-based three-dimensional integration circuits

Three dimensional integrated circuits (3D ICs) have been acknowledged as a promising technology to overcome the interconnect delay bottleneck brought by continuous CMOS scaling. Recent research shows that through-silicon-vias (TSVs), which act as vertical links between layers, pose yield and reliability challenges for 3D design. This thesis presents three original contributions.The first contribution presents a grouping-based technique to improve the yield of 3D ICs under manufacturing TSV defects, where regular and redundant TSVs are partitioned into groups. In each group, signals can select good TSVs using rerouting multiplexers avoiding defective TSVs. Grouping ratio (regular to redundant TSVs in one group) has an impact on yield and hardware overhead. Mathematical probabilistic models are presented for yield analysis under the influence of independent and clustering defect distributions. Simulation results using MATLAB show that for a given number of TSVs and TSV failure rate, careful selection of grouping ratio results in achieving 100% yield at minimal hardware cost (number of multiplexers and redundant TSVs) in comparison to a design that does not exploit TSV grouping ratios. The second contribution presents an efficient online fault tolerance technique based on redundant TSVs, to detect TSV manufacturing defects and address thermal-induced reliability issue. The proposed technique accounts for both fault detection and recovery in the presence of three TSV defects: voids, delamination between TSV and landing pad, and TSV short-to-substrate. Simulations using HSPICE and ModelSim are carried out to validate fault detection and recovery. Results show that regular and redundant TSVs can be divided into groups to minimise area overhead without affecting the fault tolerance capability of the technique. Synthesis results using 130-nm design library show that 100% repair capability can be achieved with low area overhead (4% for the best case). The last contribution proposes a technique with joint consideration of temperature mitigation and fault tolerance without introducing additional redundant TSVs. This is achieved by reusing spare TSVs that are frequently deployed for improving yield and reliability in 3D ICs. The proposed technique consists of two steps: TSV determination step, which is for achieving optimal partition between regular and spare TSVs into groups; The second step is TSV placement, where temperature mitigation is targeted while optimizing total wirelength and routing difference. Simulation results show that using the proposed technique, 100% repair capability is achieved across all (five) benchmarks with an average temperature reduction of 75.2? (34.1%) (best case is 99.8? (58.5%)), while increasing wirelength by a small amount

Cross-layer design of thermally-aware 2.5D systems

Over the past decade, CMOS technology scaling has slowed down. To sustain the historic performance improvement predicted by Moore's Law, in the mid-2000s the computing industry moved to using manycore systems and exploiting parallelism. The on-chip power densities of manycore systems, however, continued to increase after the breakdown of Dennard's Scaling. This leads to the `dark silicon' problem, whereby not all cores can operate at the highest frequency or can be turned on simultaneously due to thermal constraints. As a result, we have not been able to take full advantage of the parallelism in manycore systems. One of the 'More than Moore' approaches that is being explored to address this problem is integration of diverse functional components onto a substrate using 2.5D integration technology. 2.5D integration provides opportunities to exploit chiplet placement flexibility to address the dark silicon problem and mitigate the thermal stress of today's high-performance systems. These opportunities can be leveraged to improve the overall performance of the manycore heterogeneous computing systems. Broadly, this thesis aims at designing thermally-aware 2.5D systems. More specifically, to address the dark silicon problem of manycore systems, we first propose a single-layer thermally-aware chiplet organization methodology for homogeneous 2.5D systems. The key idea is to strategically insert spacing between the chiplets of a 2.5D manycore system to lower the operating temperature, and thus reclaim dark silicon by allowing more active cores and/or higher operating frequency under a temperature threshold. We investigate manufacturing cost and thermal behavior of 2.5D systems, then formulate and solve an optimization problem that jointly maximizes performance and minimizes manufacturing cost. We then enhance our methodology by incorporating a cross-layer co-optimization approach. We jointly maximize performance and minimize manufacturing cost and operating temperature across logical, physical, and circuit layers. We propose a novel gas-station link design that enables pipelining in passive interposers. We then extend our thermally-aware optimization methodology for network routing and chiplet placement of heterogeneous 2.5D systems, which consist of central processing unit (CPU) chiplets, graphics processing unit (GPU) chiplets, accelerator chiplets, and/or memory stacks. We jointly minimize the total wirelength and the system temperature. Our enhanced methodology increases the thermal design power budget and thereby improves thermal-constraint performance of the system

Two- and Three-dimensional High Performance, Patterned Overlay Multi-chip Module Technology

A two- and three-dimensional multi-chip module technology was developed in response to the continuum in demand for increased performance in electronic systems, as well as the desire to reduce the size, weight, and power of space systems. Though developed to satisfy the needs of military programs, such as the Strategic Defense Initiative Organization, the technology, referred to as High Density Interconnect, can also be advantageously exploited for a wide variety of commercial applications, ranging from computer workstations to instrumentation and microwave telecommunications. The robustness of the technology, as well as its high performance, make this generality in application possible. More encouraging is the possibility of this technology for achieving low cost through high volume usage

MEMS Technologies Enabling the Future Wafer Test Systems

As the form factor of microelectronic systems and chips are continuing to shrink, the demand for increased connectivity and functionality shows an unabated rising trend. This is driving the evolution of technologies that requires 3D approaches for the integration of devices and system design. The 3D technology allows higher packing densities as well as shorter chip-to-chip interconnects. Micro-bump technology with through-silicon vias (TSVs) and advances in flip chip technology enable the development and manufacturing of devices at bump pitch of 14 μm or less. Silicon carrier or interposer enabling 3D chip stacking between the chip and the carrier used in packaging may also offer probing solutions by providing a bonding platform or intermediate board for a substrate or a component probe card assembly. Standard vertical probing technologies use microfabrication technologies for probes, templates and substrate-ceramic packages. Fine pitches, below 50 μm bump pitch, pose enormous challenges and microelectromechanical system (MEMS) processes are finding applications in producing springs, probes, carrier or substrate structures. In this chapter, we explore the application of MEMS-based technologies on manufacturing of advanced probe cards for probing dies with various new pad or bump structures