Optical multi-context scrubbing operation on a redundant system

This paper presents a proposal of the world-first optical multi-context scrubbing operation on a redundant system that can maintain the state of a sequential circuit and the operation continuously without any interruption on a radiation-hardened optically reconfigurable gate array even after a permanent failure suddenly happens on the sequential circuit or a flip-flop by radiation. Up to now, a high-speed optical scrubbing operation has been demonstrated on a radiation-hardened optically reconfigurable gate array. In addition, a multi-context scrubbing operation based on the high-speed optical scrubbing operation has already been demonstrated. Although the multi-context scrubbing operation presents the benefit that it can treat both soft errors and permanent failures caused by radiation simultaneously, the conventional contributions have never presented how to maintain the state of a sequential circuit after a permanent failure occurs on flip-flops. Therefore, in the conventional multi-context scrubbing operation, all the operations must be restarted from the initial condition each time a permanent failure occurs on a programmable gate array. As a result, conventional multi-context scrubbing operations could not be applied for real-time systems. The proposed optical multi-context scrubbing method that can solve the issue has been experimentally evaluated on a radiation-hardened optically reconfigurable gate array

Rewritable nanoscale oxide photodetector

Nanophotonic devices seek to generate, guide, and/or detect light using structures whose nanoscale dimensions are closely tied to their functionality. Semiconducting nanowires, grown with tailored optoelectronic properties, have been successfully placed into devices for a variety of applications. However, the integration of photonic nanostructures with electronic circuitry has always been one of the most challenging aspects of device development. Here we report the development of rewritable nanoscale photodetectors created at the interface between LaAlO3 and SrTiO3. Nanowire junctions with characteristic dimensions 2-3 nm are created using a reversible AFM writing technique. These nanoscale devices exhibit a remarkably high gain for their size, in part because of the large electric fields produced in the gap region. The photoconductive response is gate-tunable and spans the visible-to-near-infrared regime. The ability to integrate rewritable nanoscale photodetectors with nanowires and transistors in a single materials platform foreshadows new families of integrated optoelectronic devices and applications.Comment: 5 pages, 5 figures. Supplementary Information 7 pages, 9 figure