Characterization of High Temperature Optocoupler for Power Electronic Systems

High-temperature devices have been rapidly increas due to the implementation of new technologies like silicon carbide, high-temperature ceramic, and others. Functionality under elevated temperatures can reduce signal integrity reducing the reliability of power electronic systems. This study presents an ongoing research effort to develop a high-temperature package for optocouplers to operate at higher temperature compared with commercial devices. Low temperature co-fired ceramic (LTCC) was used as the substrate. Bare die commercial LED and photodetectors were attached to the substrate and tested for functionality. Preliminary results show enhanced performance at elevated temperatures compared to a commercial optocoupler device

Solid immersion lens applications for nanophotonic devices

Solid immersion lens (SIL) microscopy combines the advantages of conventional microscopy with those of near-field techniques, and is being increasingly adopted across a diverse range of technologies and applications. A comprehensive overview of the state-of-the-art in this rapidly expanding subject is therefore increasingly relevant. Important benefits are enabled by SIL-focusing, including an improved lateral and axial spatial profiling resolution when a SIL is used in laser-scanning microscopy or excitation, and an improved collection efficiency when a SIL is used in a light-collection mode, for example in fluorescence micro-spectroscopy. These advantages arise from the increase in numerical aperture (NA) that is provided by a SIL. Other SIL-enhanced improvements, for example spherical-aberration-free sub-surface imaging, are a fundamental consequence of the aplanatic imaging condition that results from the spherical geometry of the SIL. Beginning with an introduction to the theory of SIL imaging, the unique properties of SILs are exposed to provide advantages in applications involving the interrogation of photonic and electronic nanostructures. Such applications range from the sub-surface examination of the complex three-dimensional microstructures fabricated in silicon integrated circuits, to quantum photoluminescence and transmission measurements in semiconductor quantum dot nanostructures

Optical crystal temperature gauge with fiber optic connections

An optical temperature gauge uses a semiconductor crystal with a band-edge shift property which is temperature dependent. An external narrow band light source provides optical excitation through a optical fiber and light energy thus passed through the crystal is conveyed by a second optical fiber to a light-to-electric transducers at an external location. The crystal can be located in cryogenic or other systems, to provide remote read-out. The light wavelength is varied (scanned) in a repetitive pattern in source with the instantaneous wavelength passing over the band-edge wavelength during each cycle of the scan. The timing of the crossover is related to the temperature of the crystal by electronic means. Several alternative elements of instrumentation are disclosed. A variation in the basic measurement apparatus is also disclosed, in which the band gap voltage of a light source such as a laser diode is evaluated at the time of band-edge crossover in the crystal and converted to a temperature value

Quantum well and dot self-aligned stripe lasers utilizing an InGaP optoelectronic confinement layer

We demonstrate and study a novel process for fabrication of GaAs-based self-aligned lasers based upon a single over-growth. A lattice-matched n-doped InGaP layer is utilized for both electrical and optical confinements. Single-lateral-mode emission is demonstrated initially from an In0.17Ga0.83 As double quantum well laser emitting similar to 980 nm. We then apply the fabrication technique to a quantum dot laser emitting similar to 1300 nm. Furthermore, we analyze the breakdown mechanism in our devices and discuss the limitations of index guiding in our structures