Nonlinear optical interactions in silicon waveguides

The strong nonlinear response of silicon photonic nanowire waveguides allows for the integration of nonlinear optical functions on a chip. However, the detrimental nonlinear optical absorption in silicon at telecom wavelengths limits the efficiency of many such experiments. In this review, several approaches are proposed and demonstrated to overcome this fundamental issue. By using the proposed methods, we demonstrate amongst others supercontinuum generation, frequency comb generation, a parametric optical amplifier, and a parametric optical oscillator

A versatile silicon-silicon nitride photonics platform for enhanced functionalities and applications

Silicon photonics is one of the most prominent technology platforms for integrated photonics and can support a wide variety of applications. As we move towards a mature industrial core technology, we present the integration of silicon nitride (SiN) material to extend the capabilities of our silicon photonics platform. Depending on the application being targeted, we have developed several integration strategies for the incorporation of SiN. We present these processes, as well as key components for dedicated applications. In particular, we present the use of SiN for athermal multiplexing in optical transceivers for datacom applications, the nonlinear generation of frequency combs in SiN micro-resonators for ultra-high data rate transmission, spectroscopy or metrology applications and the use of SiN to realize optical phased arrays in the 800–1000 nm wavelength range for Light Detection And Ranging (LIDAR) applications. These functionalities are demonstrated using a 200 mm complementary metal-oxide-semiconductor (CMOS)-compatible pilot line, showing the versatility and scalability of the Si-SiN platform

Silicon Nitride Photonic Integration Platforms for Visible, Near-Infrared and Mid-Infrared Applications

[EN] Silicon nitride photonics is on the rise owing to the broadband nature of the material, allowing applications of biophotonics, tele/datacom, optical signal processing and sensing, from visible, through near to mid-infrared wavelengths. In this paper, a review of the state of the art of silicon nitride strip waveguide platforms is provided, alongside the experimental results on the development of a versatile 300 nm guiding film height silicon nitride platform.The authors acknowledge financial support through projects TEC2013-42332-P, TEC2015-69787-REDT PIC4TB, TEC2016-80385-P SINXPECT, TEC2014-54449-C3-1-R, GVA PROMETEO 2013/012 and EC H2020-ICT-27-2015 PICs4all. G.M. acknowledges BES-2014-068523, L.A.B. acknowledges PTA2015-11309-I, J.F. acknowledges DI-15-08031 and R.B. acknowledges PTQ-15-07966.Muñoz Muñoz, P.; Mico-Cabanes, G.; Bru-Orgiles, LA.; Pastor Abellán, D.; Pérez-López, D.; Doménech Gómez, JD.; Fernández, J.... (2017). Silicon Nitride Photonic Integration Platforms for Visible, Near-Infrared and Mid-Infrared Applications. Sensors. 17 (9)(2088):1-25. https://doi.org/10.3390/s17092088S12517 (9)208

Wafer-level processing of ultralow-loss Si3N4

Photonic integrated circuits (PICs) are devices fabricated on a planar wafer that allow light generation, processing, and detection. Photonic integration brings important advantages for scaling up the complexity and functionality of photonic systems and facilitates their mass deployment in areas where large volumes and compact solutions are needed, e.g., optical interconnects. Among the material platforms available, silicon nitride (Si3N4) displays excellent optical properties such as broadband transparency, moderately high refractive index, and relatively strong nonlinearities. Indeed, Si3N4 integrated waveguides display ultralow-loss (few decibels per meter), which enables efficient light processing and nonlinear optics. Moreover, Si3N4 is compatible with standard complementary metal oxide semiconductor (CMOS) processing techniques,which facilitates the manufacture scalability required by mass deployment of PICs. However, the selection of a single photonic platform sets limitations to the device functionalities due to the intrinsic properties of the material and the fundamental limitation of optical waveguiding. Multilayer integration of different platforms can overcome the limitations encountered in a singleplatform PIC.This thesis presents the development of advanced techniques for the waferlevel manufacturing of ultralow-loss Si3N4 devices and approaches to enable their interface with active components like modulators and chip-scale comb sources (microcombs). The investigation covers the tailoring of a waveguide to the functionality required, the wafer-scale manufacturing of Si3N4, and how to overcome the limitations of a single platform on a wafer. These studies enable high-yield fabrication of microcombs, the integration of two Si3N4 platforms on the same wafer, and a strategy to efficiently couple to an integrated LiNbO3 layer to expand the chip functionality and scale up the complexity of the PIC