Van der Waals Materials for Atomically-Thin Photovoltaics: Promise and Outlook

Two-dimensional (2D) semiconductors provide a unique opportunity for optoelectronics due to their layered atomic structure, electronic and optical properties. To date, a majority of the application-oriented research in this field has been focused on field-effect electronics as well as photodetectors and light emitting diodes. Here we present a perspective on the use of 2D semiconductors for photovoltaic applications. We discuss photonic device designs that enable light trapping in nanometer-thickness absorber layers, and we also outline schemes for efficient carrier transport and collection. We further provide theoretical estimates of efficiency indicating that 2D semiconductors can indeed be competitive with and complementary to conventional photovoltaics, based on favorable energy bandgap, absorption, external radiative efficiency, along with recent experimental demonstrations. Photonic and electronic design of 2D semiconductor photovoltaics represents a new direction for realizing ultrathin, efficient solar cells with applications ranging from conventional power generation to portable and ultralight solar power.Comment: 4 figure

Light Generation and Harvesting in a Van der Waals Heterostructure

Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of semiconducting transition metal dichalcogenides MoS2 or WSe2 have been proposed as promising channel materials for field-effect transistors (FETs). Their high mechanical flexibility, stability and quality coupled with potentially inexpensive production methods offer potential advantages compared to organic and crystalline bulk semiconductors. Due to quantum mechanical confinement, the band gap in monolayer MoS2 is direct in nature, leading to a strong interaction with light that can be exploited for building phototransistors and ultrasensitive photodetectors. Here, we report on the realization of light-emitting diodes based on vertical heterojunctions composed of n-type monolayer MoS2 and p-type silicon. Careful interface engineering allows us to realize diodes showing rectification and light emission from the entire surface of the heterojunction. Electroluminescence spectra show clear signs of direct excitons related to the optical transitions between the conduction and valence bands. Our pn diodes can also operate as solar cells, with typical external quantum efficiency exceeding 4%. Our work opens up the way to more sophisticated optoelectronic devices such as lasers and heterostructure solar cells based on hybrids of two-dimensional (2D) semiconductors and silicon.Comment: Submitted versio

A non-destructive analytic tool for nanostructured materials : Raman and photoluminescence spectroscopy

Modern materials science requires efficient processing and characterization techniques for low dimensional systems. Raman spectroscopy is an important non-destructive tool, which provides enormous information on these materials. This understanding is not only interesting in its own right from a physicist's point of view, but can also be of considerable importance in optoelectronics and device applications of these materials in nanotechnology. The commercial Raman spectrometers are quite expensive. In this article, we have presented a relatively less expensive set-up with home-built collection optics attachment. The details of the instrumentation have been described. Studies on four classes of nanostructures - Ge nanoparticles, porous silicon (nanowire), carbon nanotubes and 2D InGaAs quantum layers, demonstrate that this unit can be of use in teaching and research on nanomaterials.Comment: 32 pages, 13 figure

Photo-FETs: phototransistors enabled by 2D and 0D nanomaterials

The large diversity of applications in our daily lives that rely on photodetection technology requires photodetectors with distinct properties. The choice of an adequate photodetecting system depends on its application, where aspects such as spectral selectivity, speed, and sensitivity play a critical role. High-sensitivity photodetection covering a large spectral range from the UV to IR is dominated by photodiodes. To overcome existing limitations in sensitivity and cost of state-of-the-art systems, new device architectures and material systems are needed with low-cost fabrication and high performance. Low-dimensional nanomaterials (0D, 1D, 2D) are promising candidates with many unique electrical and optical properties and additional functionalities such as flexibility and transparency. In this Perspective, the physical mechanism of photo-FETs (field-effect transistors) is described and recent advances in the field of low-dimensional photo-FETs and hybrids thereof are discussed. Several requirements for the channel material are addressed in view of the photon absorption and carrier transport process, and a fundamental trade-off between them is pointed out for single-material-based devices. We further clarify how hybrid devices, consisting of an ultrathin channel sensitized with strongly absorbing semiconductors, can circumvent these limitations and lead to a new generation of highly sensitive photodetectors. Recent advances in the development of sensitized low-dimensional photo-FETs are discussed, and several promising future directions for their application in high-sensitivity photodetection are proposed.Peer ReviewedPostprint (author's final draft

Bandgap engineering in semiconductor alloy nanomaterials with widely tunable compositions

Over the past decade, tremendous progress has been achieved in the development of nanoscale semiconductor materials with a wide range of bandgaps by alloying different individual semiconductors. These materials include traditional II-VI and III-V semiconductors and their alloys, inorganic and hybrid perovskites, and the newly emerging 2D materials. One important common feature of these materials is that their nanoscale dimensions result in a large tolerance to lattice mismatches within a monolithic structure of varying composition or between the substrate and target material, which enables us to achieve almost arbitrary control of the variation of the alloy composition. As a result, the bandgaps of these alloys can be widely tuned without the detrimental defects that are often unavoidable in bulk materials, which have a much more limited tolerance to lattice mismatches. This class of nanomaterials could have a far-reaching impact on a wide range of photonic applications, including tunable lasers, solid-state lighting, artificial photosynthesis and new solar cells

Black phosphorus: narrow gap, wide applications

The recent isolation of atomically thin black phosphorus by mechanical exfoliation of bulk layered crystals has triggered an unprecedented interest, even higher than that raised by the first works on graphene and other two-dimensional, in the nanoscience and nanotechnology community. In this Perspective we critically analyze the reasons behind the surge of experimental and theoretical works on this novel two-dimensional material. We believe that the fact that black phosphorus band gap value spans over a wide range of the electromagnetic spectrum that was not covered by any other two-dimensional material isolated to date (with remarkable industrial interest such as thermal imaging, thermoelectrics, fiber optics communication, photovoltaics, etc), its high carrier mobility, its ambipolar field-effect and its rather unusual in-plane anisotropy drew the attention of the scientific community towards this two-dimensional material. Here we also review the current advances, the future directions and the challenges in this young research field.Comment: Updated version of the perspective article about black phosphorus, including all the feedback received from arXiv users + reviewer