Neuromorphic systems based on memristive devices - From the material science perspective to bio-inspired learning hardware

Hardware computation is facing in the present age a deep transformation of its own paradigms. Silicon based computation is reaching its limit due to the physical constraints of transistor technology. As predicted by the Moore’s law, downscaling of transistor dimensions doubled each year since the 60s, leading nowadays to the extreme of 16-nm channel width of the present state-of-the-art technology. No further improvement is possible, since laws of physics impose a different electrical behavior when lower dimensions are attempted. Multiple solutions are then envisaged, spanning the range from quantum computing to neuromorphic computing. The present dissertation wants to be a preliminary study for understanding the opportunities enabled by neuromorphic computing based on resistive switching memories. In particular, brain inspires technology and architecture of new generation processors because of its unique properties: parallel and distributed computation, superposition of processing and memory unit, low power consumption, to cite only some of them. Such features make brain particularly efficient and robust against degraded data, further than particularly suitable to process and store in memory new nformation. Despite many research projects and some commercial products are already proposing brain-like computing processors, like spiNNaker or IBM’s Bluenorth, they only mimic the brain functioning with standard Silicon technology, that is inherently serial and distinguish between processing and memory unit. Resistive switching technology on the other hand, would allow to overcome many of these issues, enabling a far better match between biological and artificial neuromorphic computation. Resistive switching are, generally speaking, Metal-Insulator-Metal structures able to change their electrical conductance as a consequence of the history of applied electric signal. In such sense, they behave exactly as synapses do in a biological neural networks. For this reason, resistive switching when modeled as memristor, i.e. memory-resistor, can act as artificial synapses and, moreover, are particularly suitable to be interfaced with artificial Silicon neurons that are designed to replicate the biological behavior when excited with electric pulses. Anyhow, from the technological standpoint, there is still no standard on the design and fabrication of resistive switching, so that multiple structure and materials are investigated. In this dissertation, it is reported an analysis of multiple resistive switching devices, based on various materials, i.e. TiO2, ZnO and HfO, and device architectures, i.e. thin film and nanostructured devices, with the scope of both characterizing and comprehending the physics behind resistive switching phenomena. Furthermore, numerical simulations of artificial spiking neural networks, embedding Silicon neurons and HfO-based resistive switching are designed and performed, in order to give a systematic analysis of the performances reached by this new kind of computing paradigm

Memristors

This Edited Volume Memristors - Circuits and Applications of Memristor Devices is a collection of reviewed and relevant research chapters, offering a comprehensive overview of recent developments in the field of Engineering. The book comprises single chapters authored by various researchers and edited by an expert active in the physical sciences, engineering, and technology research areas. All chapters are complete in itself but united under a common research study topic. This publication aims at providing a thorough overview of the latest research efforts by international authors on physical sciences, engineering, and technology,and open new possible research paths for further novel developments

Low Power Memory/Memristor Devices and Systems

This reprint focusses on achieving low-power computation using memristive devices. The topic was designed as a convenient reference point: it contains a mix of techniques starting from the fundamental manufacturing of memristive devices all the way to applications such as physically unclonable functions, and also covers perspectives on, e.g., in-memory computing, which is inextricably linked with emerging memory devices such as memristors. Finally, the reprint contains a few articles representing how other communities (from typical CMOS design to photonics) are fighting on their own fronts in the quest towards low-power computation, as a comparison with the memristor literature. We hope that readers will enjoy discovering the articles within

One-dimensional titanium dioxide nanomaterial based memristive device and its neuromorphic computing applications

Memristor devices as the alternative to the next-generation non-volatile memory devices has been widely studied recently due to its advantages of simple structure, fast switching speed, low power consumption. Among all the different materials that demonstrate the potential of resistive switching behavior, memristor devices based on TiO2 has attracted particular attention considering its richness in switching mechanism associated with wide range of phases. Furthermore, one-dimensional (1D) nanomaterial based memristor devices demonstrate promising potential considering about its advantages of confinement of electron transport in individual nanowires, enabling precision engineering of electrical performance for stable and reliable memristor devices, high integration density potential, etc. In this research, we propose the use of facile hydrothermal methods to synthesize TiO2 nanowires for the fabrication of memristor devices. Three different types of devices were fabricated, i.e., based on TiO2 nanowire networks on Ti foil, TiO2 nanorod arrays grown on fluorine-doped tin oxide (FTO) substrate, and single TiO2 and titanate nanowire directly synthesized from TiO2 nanoparticles. The corresponding devices demonstrated promising resistive switching performance respectively and were further used for multilevel memory storage and more importantly, the emulation of artificial synapses for the application of neuromorphic computing. The corresponding switching mechanisms were explored and it was found that the oxygen vacancies in TiO2 nanowires during the hydrothermal process play an important role in the switching and charge transport mechanism. This work will improve the understanding of engineering the electrical performance of TiO2 based memristive devices and provide insights into the switching mechanism in 1D nanomaterial based memristive devices

Inhomogeneity and Segregation Effect in the Surface Layer of Fe-Doped SrTiO3 Single Crystals

The e ect of Fe doping on SrTiO3 single crystals was investigated in terms of crystal and electronic structure over a wide temperature range in both oxidizing and reducing conditions. The electrical properties were thoroughly studied with a special focus on the resistive switching phenomenon. Contrary to the undoped SrTiO3 crystals, where isolated filaments are responsible for resistive switching, the iron-doped crystals showed stripe-like conducting regions at the nanoscale. The results showed a non-uniform Fe distribution of as-received crystals and the formation of new phases in the surface layer of reduced/oxidized samples. The oxidation procedure led to a separation of Ti(Fe) and Sr, while the reduction resulted in the tendency of Fe to agglomerate and migrate away from the surface as seen from the time of flight mass spectroscopy measurements. Moreover, a clear presence of Fe-rich nano-filament in the reduced sample was found

MOCAST 2021

The 10th International Conference on Modern Circuit and System Technologies on Electronics and Communications (MOCAST 2021) will take place in Thessaloniki, Greece, from July 5th to July 7th, 2021. The MOCAST technical program includes all aspects of circuit and system technologies, from modeling to design, verification, implementation, and application. This Special Issue presents extended versions of top-ranking papers in the conference. The topics of MOCAST include:Analog/RF and mixed signal circuits;Digital circuits and systems design;Nonlinear circuits and systems;Device and circuit modeling;High-performance embedded systems;Systems and applications;Sensors and systems;Machine learning and AI applications;Communication; Network systems;Power management;Imagers, MEMS, medical, and displays;Radiation front ends (nuclear and space application);Education in circuits, systems, and communications

Nanoparticle devices for brain-inspired computing.

The race towards smarter and more efficient computers is at the core of our technology industry and is driven by the rise of more and more complex computational tasks. However, due to limitations such as the increasing costs and inability to indefinitely keep shrinking conventional computer chips, novel hardware architectures are needed. Brain-inspired, or neuromorphic, hardware has attracted great interest over the last decades. The human brain can easily carry out a multitude of tasks such as pattern recognition, classification, abstraction, and motor control with high efficiency and extremely low power consumption. Therefore, it seems logical to take inspiration from the brain to develop new systems and hardware that can perform interesting computational tasks faster and more efficiently. Devices based on percolating nanoparticle networks (PNNs) have shown many features that are promising for the creation of low-power neuromorphic systems. PNN devices exhibit many emergent brain-like properties and complex electrical activity under stimulation. However, so far PNNs have been studied using simple two-contact devices and relatively slow measuring systems. This limits the capabilities of PNNs for computing applications and questions such as whether the brain-like properties continue to be observed at faster timescales, or what are the limits for operation of PNN devices remain unanswered. This thesis explores the design, fabrication, and testing of the first successful multi- contact PNN devices. A novel and simple fabrication technique for the creation of working electrical contacts to nanoparticle networks is presented. Extensive testing of the multi-contact PNN devices demonstrated that electrical stimulation of multiple input contacts leads to complex switching activity. Complex switching activity exhibited different patterns of switching behaviour with events occurring on all contacts, on few contacts, or only on a single contact. The device behaviour is investigated for the first time at microsecond timescales, and it is found that the PNNs exhibit stochastic spiking behaviour that originates in single tunnel gaps and is strikingly similar to that observed in biological neurons. The stochastic spiking behaviour of PNNs is then used for the generation of high quality random numbers which are fundamental for encryption and security. Together the results presented in this thesis pave the way for the use of PNNs for brain-inspired computing and secure information processing