A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI

Active gate driving has been demonstrated to beneficially shape switching waveforms in Si-and SiC-based power converters. For faster GaN power devices with sub-10-ns switching transients, however, reported variable gate driving has so far been limited to altering a single drive parameter once per switching event, either during or outside of the transient. This paper demonstrates a gate driver with a timing resolution and range of output resistance levels that surpass those of existing gate drivers or arbitrary waveform generators. It is shown to permit active gate driving with a bandwidth that is high enough to shape a GaN switching during the transient. The programmable gate driver has integrated high-speed memory, control logic, and multiple parallel output stages. During switching transients, the gate driver can activate a near-arbitrary sequence of pull-up or pull-down output resistances between 0.12 and 64 A hybrid of clocked and asynchronous control logic with 150-ps delay elements achieves an effective resistance update rate of 6.7 GHz during switching events. This active gate driver is evaluated in a 1-MHz bridge-leg converter using EPC2015 GaN FETs. The results show that aggressive manipulation of the gate-drive resistance at sub-nanosecond resolutions can profile gate waveforms of the GaN FET, thereby beneficially shaping the switch-node voltage waveform in the power circuit. Examples of open-loop active gate driving are demonstrated that maintain the low switching loss of constant-strength gate driving, while reducing overshoot, oscillation, and EMI-generating high-frequency spectral content

Study and design of topologies and components for high power density DC-DC converters

Size reduction of low power electronic DC–DC converters is a topic of major interest for power electronics which requires the study and design of circuits and components working under redefined requirements. For this purpose, novel circuital topologies provide advantages in terms of power density increment, especially where a single chip design is feasible. These concepts have been applied to design and implement an integrated high step-down multiphase buck converter and to study the miniaturization of a stackable fiflyback architecture. Particular attention has been dedicated to power inductors, focusing on the modeling and measurement of magnetic materials’ hysteresis and core losses

Single Inductor Dual Output Buck Converter

The portable electronics market is rapidly migrating towards more compact devices with multiple functionalities. Form factor, performance, cost and efficiency of these devices constitute the factors of merit of devices like cell phones, MP3 players and PDA's. With advancement in technology and more intelligent processors being used, there is a need for multiple high integrity voltage supplies for empowering the systems in portable electronic devices. Switched mode power supplies (SMPS's) are used to regulate the battery voltage. In an SMPS, maximum area is taken by the passive components such as the inductor and the capacitor. This work demonstrates a single inductor used in a buck converter with two output voltages from an input battery with voltage of value 3V. The main focus areas are low cross regulation between the outputs and supply of completely independent load current levels while maintaining desired values (1.2V,1.5V) within well controlled ripple levels. Dynamic hysteresis control is used for the single inductor dual output buck converter in this work. Results of schematic and post layout simulations performed in CADENCE prove the merits of this control method, such as nil cross regulation and excellent transient response

GaN-Based High Efficiency Transmitter for Multiple-Receiver Wireless Power Transfer

Wireless power transfer (WPT) has attracted great attention from industry and academia due to high charging flexibility. However, the efficiency of WPT is lower and the cost is higher than the wired power transfer approaches. Efforts including converter optimization, power delivery architecture improvement, and coils have been made to increase system efficiency.In this thesis, new power delivery architectures in the WPT of consumer electronics have been proposed to improve the overall system efficiency and increase the power density.First, a two-stage transmitter architecture is designed for a 100 W WPT system. After comparing with other topologies, the front-end ac-dc power factor correction (PFC) rectifier employs a totem-pole rectifier. A full bridge 6.78 MHz resonant inverter is designed for the subsequent stage. An impedance matching network provides constant transmitter coil current. The experimental results verify the high efficiency, high PF, and low total harmonic distortion (THD).Then, a single-stage transmitter is derived based on the verified two-stage structure. By integration of the PFC rectifier and full bridge inverter, two GaN FETs are saved and high efficiency is maintained. The integrated DCM operated PFC rectifier provides high PF and low THD. By adopting a control scheme, the transmitter coil current and power are regulated. A simple auxiliary circuit is employed to improve the light load efficiency. The experimental results verify the achievement of high efficiency.A closed-loop control scheme is implemented in the single-stage transmitter to supply multiple receivers simultaneously. With a controlled constant transmitter current, the system provides a smooth transition during dynamically load change. ZVS detection circuit is proposed to protect the transmitter from continuous hard switching operation. The control scheme is verified in the experiments.The multiple-reciever WPT system with the single-stage transmitter is investigated. The system operating range is discussed. The method of tracking optimum system efficiency is studied. The system control scheme and control procedure, targeting at providing a wide system operating range, robust operation and capability of tracking the optimized system efficiency, are proposed. Experiment results demonstrate the WPT system operation

Driving and Protection of High Density High Temperature Power Module for Electric Vehicle Application

There has been an increasing trend for the commercialization of electric vehicles (EVs) to reduce greenhouse gas emissions and dependence on petroleum. However, a key technical barrier to their wide application is the development of high power density electric drive systems due to limited space within EVs. High temperature environment inherent in EVs further introduces a new level of complexity. Under high power density and high temperature operation, system reliability and safety also become important. This dissertation deals with the development of advanced driving and protection technologies for high temperature high density power module capable of operating under the harsh environment of electric vehicles, while ensuring system reliability and safety under short circuit conditions. Several related research topics will be discussed in this dissertation. First, an active gate driver (AGD) for IGBT modules is proposed to improve their overall switching performance. The proposed one has the capability of reducing the switching loss, delay time, and Miller plateau duration during turn-on and turn-off transient without sacrificing current and voltage stress. Second, a board-level integrated silicon carbide (SiC) MOSFET power module is developed for high temperature and high power density application. Specifically, a silicon-on-insulator (SOI) based gate driver board is designed and fabricated through chip-on-board (COB) technique. Also, a 1200 V / 100 A SiC MOSFET phase-leg power module is developed utilizing high temperature packaging technologies. Third, a comprehensive short circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs is presented. The short circuit capability of three types of commercial 1200 V SiC MOSFETs is tested under various conditions. The experimental short circuit behaviors are compared and analyzed through numerical thermal dynamic simulation. Finally, according to the short circuit ruggedness evaluation results, three short circuit protection methods are proposed to improve the reliability and overall cost of the SiC MOSFET based converter. A comparison is made in terms of fault response time, temperature dependent characteristics, and applications to help designers select a proper protection method