468 research outputs found

    Radiation Hardened by Design Methodologies for Soft-Error Mitigated Digital Architectures

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    abstract: Digital architectures for data encryption, processing, clock synthesis, data transfer, etc. are susceptible to radiation induced soft errors due to charge collection in complementary metal oxide semiconductor (CMOS) integrated circuits (ICs). Radiation hardening by design (RHBD) techniques such as double modular redundancy (DMR) and triple modular redundancy (TMR) are used for error detection and correction respectively in such architectures. Multiple node charge collection (MNCC) causes domain crossing errors (DCE) which can render the redundancy ineffectual. This dissertation describes techniques to ensure DCE mitigation with statistical confidence for various designs. Both sequential and combinatorial logic are separated using these custom and computer aided design (CAD) methodologies. Radiation vulnerability and design overhead are studied on VLSI sub-systems including an advanced encryption standard (AES) which is DCE mitigated using module level coarse separation on a 90-nm process with 99.999% DCE mitigation. A radiation hardened microprocessor (HERMES2) is implemented in both 90-nm and 55-nm technologies with an interleaved separation methodology with 99.99% DCE mitigation while achieving 4.9% increased cell density, 28.5 % reduced routing and 5.6% reduced power dissipation over the module fences implementation. A DMR register-file (RF) is implemented in 55 nm process and used in the HERMES2 microprocessor. The RF array custom design and the decoders APR designed are explored with a focus on design cycle time. Quality of results (QOR) is studied from power, performance, area and reliability (PPAR) perspective to ascertain the improvement over other design techniques. A radiation hardened all-digital multiplying pulsed digital delay line (DDL) is designed for double data rate (DDR2/3) applications for data eye centering during high speed off-chip data transfer. The effect of noise, radiation particle strikes and statistical variation on the designed DDL are studied in detail. The design achieves the best in class 22.4 ps peak-to-peak jitter, 100-850 MHz range at 14 pJ/cycle energy consumption. Vulnerability of the non-hardened design is characterized and portions of the redundant DDL are separated in custom and auto-place and route (APR). Thus, a range of designs for mission critical applications are implemented using methodologies proposed in this work and their potential PPAR benefits explored in detail.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

    A high-resolution time interpolator based on a delay locked loop and an RC delay line

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    An architecture for a time interpolation circuit with an rms error of ~25 ps has been developed in a 0.7- mu m CMOS technology. It is based on a delay locked loop (DLL) driven by a 160-MHz reference clock and a passive RC delay line controlled by an autocalibration circuit. Start-up calibration of the RC delay line is performed using code density tests (CDT). The very small temperature/voltage dependence of R and C parameters and the self calibrating DLL results in a low- power, high-resolution time interpolation circuit in a standard digital CMOS technology. (11 refs)

    An Analog Multiphase Self-Calibrating DLL to Minimize the Effects of Process, Supply Voltage, and Temperature Variations

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    Delay locked loops have been found to be useful tools in such applications as computing, TDCs, and communications. These system can be found in space exploration vehicles and satellites, which operate in extreme environments. Unfortunately, in these environments supply voltage and temperature will not be constant, therefore they must be under consideration when designing a DLL. Furthermore, solar radiation in conjunction with the varying environmental aspects, could cause the delay locked loop to lose it locked state. Delay locked loops are inherently good at tracking these environmental aspects, but in order to do so, the voltage controlled delay line must exhibit a very large gain, which translates to a large capture range. Assuming charged particles hit a key node in the DLL (e.g. the control voltage), the DLL would lose lock and would have to recapture it. Depending on the severity of the uctuation, this relocking process could easily take on the order of many microseconds assuming the bandwidth was kept low to minimize jitter. To date, no delay locked loops have been published for extreme environment applications. In many other extreme environment circuits, calibration techniques have been applied to minimize the environmental effects. Whereas there have been multiple calibration methods published related to delay locked loops, none of them were intended for extreme environments. Furthermore, none of these methods are directly suitable for an analog multiphase delay locked loop. The self-calibrating DLL in this work includes an all digital calibration circuit, as well as a system transient monitor. The coarse calibration helps minimize global process, voltage, and temperature errors for an analog multiphase DLL. The system monitor is used to detect any transients that might cause the DLL to unlock, which could be used to allow the DLL to be recalibrated to the new environmental conditions. The presented measurement results will demonstrate that the DLL can be used in extreme environments such as space, or other extreme environment applications

    Formal Verification and In-Situ Test of Analog and Mixed-Signal Circuits

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    As CMOS technologies continuously scale down, designing robust analog and mixed-signal (AMS) circuits becomes increasingly difficult. Consequently, there are pressing needs for AMS design checking techniques, more specifically design verification and design for testability (DfT). The purpose of verification is to ensure that the performance of an AMS design meets its specification under process, voltage and temperature (PVT) variations and different working conditions, while DfT techniques aim at embedding testability into the design, by adding auxiliary circuitries for testing purpose. This dissertation focuses on improving the robustness of AMS designs in highly scaled technologies, by developing novel formal verification and in-situ test techniques. Compared with conventional AMS verification that relies more on heuristically chosen simulations, formal verification provides a mathematically rigorous way of checking the target design property. A formal verification framework is proposed that incorporates nonlinear SMT solving techniques and simulation exploration to efficiently verify the dynamic properties of AMS designs. A powerful Bayesian inference based technique is applied to dynamically tradeoff between the costs of simulation and nonlinear SMT. The feasibility and efficacy of the proposed methodology are demonstrated on the verification of lock time specification of a charge-pump PLL. The powerful and low-cost digital processing capabilities of today?s CMOS technologies are enabling many new in-situ test schemes in a mixed-signal environment. First, a novel two-level structure of GRO-PVDL is proposed for on-chip jitter testing of high-speed high-resolution applications with a gated ring oscillator (GRO) at the first level to provide a coarse measurement and a Vernier-style structure at the second level to further measure the residue from the first level with a fine resolution. With the feature of quantization noise shaping, an effective resolution of 0.8ps can be achieved using a 90nm CMOS technology. Second, the reconfigurability of recent all-digital PLL designs is exploited to provide in-situ output jitter test and diagnosis abilities under multiple parametric variations of key analog building blocks. As an extension, an in-situ test scheme is proposed to provide online testing for all-digital PLL based polar transmitters

    The Efficient Design of Time-to-Digital Converters

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    Integration of a Digital Built-in Self-Test for On-Chip Memories

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    The ability of testing on-chip circuitry is extremely essential to ASIC implemen- tations today. However, providing functional tests and verification for on-chip (embedded) memories always poses a huge number of challenges to the designer. Therefore, a co-existing automated built-in self-test block with the Design Under Test (DUT) seems crucial to provide comprehensive, efficient and robust testing features. The target DUT of this thesis project is the state-of-the-arts Ultra Low Power (ULP) dual-port SRAMs designed in ASIC group of EIT department at Lund University. This thesis starts from system RTL modeling and verification from an earlier project, and then goes through ASIC design phase in 28 nm FD-SOI technology from ST-Microelectronics. All scripts during the ASIC design phase are developed in TCL. This design is implemented with multiple power domains (using CPF approach and introducing level-shifters at crossing-points between domains) and multiple clock sources in order to make it possible to perform various measurements with a high reliability on different flavours of a dual-port SRAM.This design is able to reduce dramatically the complexity of verification and measurement to integrated memories. This digital integrated circuit (IC) is developed as an application-specific IC (ASIC) chip for functional verification of integrated memories and measuring them in different aspects such as power consumption. The design is automated and capable of being reconfigured easily in terms of required actions and data for testing on-chip memories. Put it in other words, this design has automated and optimized the generation of what data to be stored on which location on memories as well as how they have been treated and interpreted later on. For instance, it refreshes and delivers different operation modes and working patterns to the entire test system in order to fully utilize integrated memories, of which such an automation is instructed by the stimuli to the chip. Besides, the pattern generation of the stimuli is implemented on MATLAB in an automated way. Due to constant advancements in chip manufacturing technology, more devices are squeezed into the same silicon area. Meaning that in order to monitor more internal signals introduced by the increased complexity of the circuits, more dedicated input/output ports (the physical interface between the chip internal signals and outside world) are required, that makes the chip bonding and testing in the future difficult and time-consuming. Additionally, memories usually have a bigger number of pins for signal reactions than other circuit blocks do, the method of dealing with so many pins should also be taken into account. Thus, a few techniques are adopted in this system to assist the designers deal with all mentioned issues. Once the ASIC chip has been fabricated (manufactured) and bonded, the on-chip memories can be tested directly on a printed circuit board in a simple and flexible way: Once test instruction input is loaded into the chip, the system starts to update the system settings and then to generate the internal configurations(parameters) so that all different operations, modes or instructions related to memory testing are automatically processed

    Jitter measurement built-in self-test circuit for phase locked loops

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    Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005.Includes bibliographical references (p. 77-79).This paper discusses the development of a new type of BIST circuit, the (VDL)2, with the purpose of measuring jitter in IBM's phase locked loops. The (VDL)2, which stands for Variable Vernier Digital Delay Locked Line, implements both cycle-to-cycle and phase jitter measurements, by using a digital delay locked loop and a 60 stage Vernier delay line. This achieves a nominal jitter resolution of 10 ps with a capture range of +/- 150 ps and does so in real time. The proposed application for this circuit is during manufacturing test of the PLL. The circuit is implemented in IBM's 90 nm process and was completed in the PLL and Clocking Development ASIC group at IBM Microelectronics in Essex Junction, Vermont as part of the VI-A program.by Brandon Ray Kam.M.Eng
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