Rewriting Flash Memories by Message Passing

This paper constructs WOM codes that combine rewriting and error correction for mitigating the reliability and the endurance problems in flash memory. We consider a rewriting model that is of practical interest to flash applications where only the second write uses WOM codes. Our WOM code construction is based on binary erasure quantization with LDGM codes, where the rewriting uses message passing and has potential to share the efficient hardware implementations with LDPC codes in practice. We show that the coding scheme achieves the capacity of the rewriting model. Extensive simulations show that the rewriting performance of our scheme compares favorably with that of polar WOM code in the rate region where high rewriting success probability is desired. We further augment our coding schemes with error correction capability. By drawing a connection to the conjugate code pairs studied in the context of quantum error correction, we develop a general framework for constructing error-correction WOM codes. Under this framework, we give an explicit construction of WOM codes whose codewords are contained in BCH codes.Comment: Submitted to ISIT 201

Systematic Error-Correcting Codes for Rank Modulation

The rank-modulation scheme has been recently proposed for efficiently storing data in nonvolatile memories. Error-correcting codes are essential for rank modulation, however, existing results have been limited. In this work we explore a new approach, \emph{systematic error-correcting codes for rank modulation}. Systematic codes have the benefits of enabling efficient information retrieval and potentially supporting more efficient encoding and decoding procedures. We study systematic codes for rank modulation under Kendall's $\tau$-metric as well as under the $\ell_\infty$-metric. In Kendall's $\tau$-metric we present $[k+2,k,3]$-systematic codes for correcting one error, which have optimal rates, unless systematic perfect codes exist. We also study the design of multi-error-correcting codes, and provide two explicit constructions, one resulting in $[n+1,k+1,2t+2]$ systematic codes with redundancy at most $2t+1$. We use non-constructive arguments to show the existence of $[n,k,n-k]$-systematic codes for general parameters. Furthermore, we prove that for rank modulation, systematic codes achieve the same capacity as general error-correcting codes. Finally, in the $\ell_\infty$-metric we construct two $[n,k,d]$ systematic multi-error-correcting codes, the first for the case of $d=O(1)$, and the second for $d=\Theta(n)$. In the latter case, the codes have the same asymptotic rate as the best codes currently known in this metric

Trajectory Codes for Flash Memory

Flash memory is well-known for its inherent asymmetry: the flash-cell charge levels are easy to increase but are hard to decrease. In a general rewriting model, the stored data changes its value with certain patterns. The patterns of data updates are determined by the data structure and the application, and are independent of the constraints imposed by the storage medium. Thus, an appropriate coding scheme is needed so that the data changes can be updated and stored efficiently under the storage-medium's constraints. In this paper, we define the general rewriting problem using a graph model. It extends many known rewriting models such as floating codes, WOM codes, buffer codes, etc. We present a new rewriting scheme for flash memories, called the trajectory code, for rewriting the stored data as many times as possible without block erasures. We prove that the trajectory code is asymptotically optimal in a wide range of scenarios. We also present randomized rewriting codes optimized for expected performance (given arbitrary rewriting sequences). Our rewriting codes are shown to be asymptotically optimal.Comment: Submitted to IEEE Trans. on Inform. Theor

Error-Correction in Flash Memories via Codes in the Ulam Metric

We consider rank modulation codes for flash memories that allow for handling arbitrary charge-drop errors. Unlike classical rank modulation codes used for correcting errors that manifest themselves as swaps of two adjacently ranked elements, the proposed \emph{translocation rank codes} account for more general forms of errors that arise in storage systems. Translocations represent a natural extension of the notion of adjacent transpositions and as such may be analyzed using related concepts in combinatorics and rank modulation coding. Our results include derivation of the asymptotic capacity of translocation rank codes, construction techniques for asymptotically good codes, as well as simple decoding methods for one class of constructed codes. As part of our exposition, we also highlight the close connections between the new code family and permutations with short common subsequences, deletion and insertion error-correcting codes for permutations, and permutation codes in the Hamming distance