Hidden attractors in fundamental problems and engineering models

Recently a concept of self-excited and hidden attractors was suggested: an attractor is called a self-excited attractor if its basin of attraction overlaps with neighborhood of an equilibrium, otherwise it is called a hidden attractor. For example, hidden attractors are attractors in systems with no equilibria or with only one stable equilibrium (a special case of multistability and coexistence of attractors). While coexisting self-excited attractors can be found using the standard computational procedure, there is no standard way of predicting the existence or coexistence of hidden attractors in a system. In this plenary survey lecture the concept of self-excited and hidden attractors is discussed, and various corresponding examples of self-excited and hidden attractors are considered

Some contributions to the analysis of piecewise linear systems.

This thesis consists of two parts, with contributions to the analysis of dynamical systems in continuous time and in discrete time, respectively. In the first part, we study several models of memristor oscillators of dimension three and four, providing for the first time rigorous mathematical results regarding the rich dynamics of such memristor oscillators, both in the case of piecewise linear models and polynomial models. Thus, for some families of discontinuous 3D piecewise linear memristor oscillators, we show the existence of an infinite family of invariant manifolds and that the dynamics on such manifolds can be modeled without resorting to discontinuous models. Our approach provides topologically equivalent continuous models with one dimension less but with one extra parameter associated to the initial conditions. It is possible so to justify the periodic behavior exhibited by such three dimensional memristor oscillators, by taking advantage of known results for planar continuous piecewise linear systems. By using the first-order Melnikov theory, we derive the bifurcation set for a three-parametric family of Bogdanov-Takens systems with symmetry and deformation. As an applications of these results, we study a family of 3D memristor oscillators where the characteristic function of the memristor is a cubic polynomial. In this family we also show the existence of an infinity number of invariant manifolds. Also, we clarify some misconceptions that arise from the numerical simulations of these systems, emphasizing the important role of invariant manifolds in these models. In a similar way than for the 3D case, we study some discontinuous 4D piecewise linear memristor oscillators, and we show that the dynamics in each stratum is topologically equivalent to a continuous 3D piecewise linear dynamical system. Some previous results on bifurcations in such reduced systems, allow us to detect rigorously for the first time a multiple focus-center-cycle bifurcation in a three-parameter space, leading to the appearance of a topological sphere in the original model, completely foliated by stable periodic orbits. In the second part of this thesis, we show that the two-dimensional stroboscopic map defined by a second order system with a relay based control and a linear switching surface is topologically equivalent to a canonical form for discontinuous piecewise linear systems. Studying the main properties of the stroboscopic map defined by such a canonical form, the orbits of period two are completely characterized. At last, we give a conjecture about the occurrence of the big bang bifurcation in the previous map

Optimization of niobium oxide-based threshold switches for oscillator-based applications

In niobium oxide-based capacitors non-linear switching characteristics can be observed if the oxide properties are adjusted accordingly. Such non-linear threshold switching characteristics can be utilized in various non-linear circuit applications, which have the potential to pave the way for the application of new computing paradigms. Furthermore, the non-linearity also makes them an interesting candidate for the application as selector devices e.g. for non-volatile memory devices. To satisfy the requirements for those two areas of application, the threshold switching characteristics need to be adjusted to either obtain a maximized voltage extension of the negative differential resistance region in the quasi-static I-V characteristics, which enhances the non-linearity of the devices and results in improved robustness to device-to-device variability or to adapt the threshold voltage to a specific non-volatile memory cell. Those adaptations of the threshold switching characteristics were successfully achieved by deliberate modifications of the niobium oxide stack. Furthermore, the impact of the material stack on the dynamic behavior of the threshold switches in non-linear circuits as well as the impact of the electroforming routine on the threshold switching characteristics were analyzed. The optimized device stack was transferred from the micrometer-sized test structures to submicrometer-sized devices, which were packaged to enable easy integration in complex circuits. Based on those packaged threshold switching devices the behavior of single as well as of coupled relaxation oscillators was analyzed. Subsequently, the obtained results in combination with the measurement results for the statistic device-to-device variability were used as a basis to simulate the pattern formation in coupled relaxation oscillator networks as well as their performance in solving graph coloring problems. Furthermore, strategies to adapt the threshold voltage to the switching characteristics of a tantalum oxide-based non-volatile resistive switch and a non-volatile phase change cell, to enable their application as selector devices for the respective cells, were discussed.:Abstract I Zusammenfassung II List of Abbrevations VI List of Symbols VII 1 Motivation 1 2 Basics 5 2.1 Negative differential resistance and local activity in memristor devices 5 2.2 Threshold switches as selector devices 8 2.3 Switching effects observed in NbOx 13 2.3.1 Threshold switching caused by metal-insulator transition 13 2.3.2 Threshold switching caused by Frenkel-Poole conduction 18 2.3.3 Non-volatile resistive switching 32 3 Sample preparation 35 3.1 Deposition techniques 35 3.1.1 Evaporation 35 3.1.2 Sputtering 36 3.2 Micrometer-sized devices 36 3.3 Submicrometer-sized devices 37 3.3.1 Process flow 37 3.3.2 Reduction of the electrode resistance 39 3.3.3 Transfer from structuring via electron beam lithography to structuring via laser lithography 48 3.3.4 Packaging procedure 50 4 Investigation and optimization of the electrical device characteristic 51 4.1 Introduction 51 4.2 Measurement setup 52 4.3 Electroforming 53 4.3.1 Optimization of the electroforming process 53 4.3.2 Characterization of the formed filament 62 4.4 Dynamic device characteristics 67 4.4.1 Emergence and measurement of dynamic behavior 67 4.4.2 Impact of the dynamic device characteristics on quasi-static I-V characteristics 70 5 Optimization of the material stack 81 5.1 Introduction 81 5.2 Adjustment of the oxygen content in the bottom layer 82 5.3 Influence of the thickness of the oxygen-rich niobium oxide layer 92 5.4 Multilayer stacks 96 5.5 Device-to-device and Sample-to-sample variability 110 6 Applications of NbOx-based threshold switching devices 117 6.1 Introduction 117 6.2 Non-linear circuits 117 6.2.1 Coupled relaxation oscillators 117 6.2.2 Memristor Cellular Neural Network 121 6.2.3 Graph Coloring 127 6.3 Selector devices 132 7 Summary and Outlook 138 8 References 141 9 List of publications 154 10 Appendix 155 10.1 Parameter used for the LT Spice simulation of I-V curves for threshold switches with varying oxide thicknesses 155 10.2 Dependence of the oscillation frequency of the relaxation oscillator circuit on the capacitance and the applied source voltage 156 10.3 Calculation of the oscillation frequency of the relaxation oscillator circuit 157 10.4 Characteristics of the memristors and the cells utilized in the simulation of the memristor cellular neural network 164 10.5 Calculation of the impedance of the cell in the memristor cellular network 166 10.6 Example graphs from the 2nd DIMACS series 179 11 List of Figures 182 12 List of Tables 19

Dynamics meets Morphology: towards Dymorph Computation

In this dissertation, approaches are presented for both technically using and investigating biological principles with oscillators in the context of electrical engineering, in particular neuromorphic engineering. Thereby, dynamics as well as morphology as important neuronal principles were explicitly selected, which shape the information processing in the human brain and distinguish it from other technical systems. The aspects and principles selected here are adaptation during the encoding of stimuli, the comparatively low signal transmission speed, the continuous formation and elimination of connections, and highly complex, partly chaotic, dynamics. The selection of these phenomena and properties has led to the development of a sensory unit that is capable of encoding mechanical stress into a series of voltage pulses by the use of a MOSFET augmented by AlScN. The circuit is based on a leaky integrate and fire neuron model and features an adaptation of the pulse frequency. Furthermore, the slow signal transmission speed of biological systems was the motivation for the investigation of a temporal delay in the feedback of the output pulses of a relaxation oscillator. In this system stable pulse patterns which form due to so-called jittering bifurcations could be observed. In particular, switching between different stable pulse patterns was possible to induce. In the further course of the work, the first steps towards time-varying coupling of dynamic systems are investigated. It was shown that in a system consisting of dimethyl sulfoxid and zinc acetate, oscillators can be used to force the formation of filaments. The resulting filaments then lead to a change in the dynamics of the oscillators. Finally, it is shown that in a system with chaotic dynamics, the extension of it with a memristive device can lead to a transient stabilisation of the dynamics, a behaviour that can be identified as a repeated pass of Hopf bifurcations

Canards Existence in Memristor's Circuits

The aim of this work is to propose an alternative method for determining the condition of existence of "canard solutions" for three and four-dimensional singularly perturbed systems with only one fast variable in the folded saddle case. This method enables to state a unique generic condition for the existence of "canard solutions" for such three and four-dimensional singularly perturbed systems which is based on the stability of folded singularities of the normalized slow dynamics deduced from a well-known property of linear algebra. This unique generic condition is perfectly identical to that provided in previous works. Application of this method to the famous three and four-dimensional memristor canonical Chua's circuits for which the classical piecewise-linear characteristic curve has been replaced by a smooth cubic nonlinear function according to the least squares method enables to show the existence of "canard solutions" in such Memristor Based Chaotic Circuits

18th IEEE Workshop on Nonlinear Dynamics of Electronic Systems: Proceedings

Proceedings of the 18th IEEE Workshop on Nonlinear Dynamics of Electronic Systems, which took place in Dresden, Germany, 26 – 28 May 2010.:Welcome Address ........................ Page I Table of Contents ........................ Page III Symposium Committees .............. Page IV Special Thanks ............................. Page V Conference program (incl. page numbers of papers) ................... Page VI Conference papers Invited talks ................................ Page 1 Regular Papers ........................... Page 14 Wednesday, May 26th, 2010 ......... Page 15 Thursday, May 27th, 2010 .......... Page 110 Friday, May 28th, 2010 ............... Page 210 Author index ............................... Page XII

2022 roadmap on neuromorphic computing and engineering

Modern computation based on von Neumann architecture is now a mature cutting-edge science. In the von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exascale with 10$^{18}$ calculations each second. Even though these future computers will be incredibly powerful, if they are based on von Neumann type architectures, they will consume between 20 and 30 megawatts of power and will not have intrinsic physically built-in capabilities to learn or deal with complex data as our brain does. These needs can be addressed by neuromorphic computing systems which are inspired by the biological concepts of the human brain. This new generation of computers has the potential to be used for the storage and processing of large amounts of digital information with much lower power consumption than conventional processors. Among their potential future applications, an important niche is moving the control from data centers to edge devices. The aim of this roadmap is to present a snapshot of the present state of neuromorphic technology and provide an opinion on the challenges and opportunities that the future holds in the major areas of neuromorphic technology, namely materials, devices, neuromorphic circuits, neuromorphic algorithms, applications, and ethics. The roadmap is a collection of perspectives where leading researchers in the neuromorphic community provide their own view about the current state and the future challenges for each research area. We hope that this roadmap will be a useful resource by providing a concise yet comprehensive introduction to readers outside this field, for those who are just entering the field, as well as providing future perspectives for those who are well established in the neuromorphic computing community