254 research outputs found

    A low-speed BIST framework for high-performance circuit testing

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    Testing of high performance integrated circuits is becoming increasingly a challenging task owing to high clock frequencies. Often testers are not able to test such devices due to their limited high frequency capabilities. In this article we outline a design-for-test methodology such that high performance devices can be tested on relatively low performance testers. In addition, a BIST framework is discussed based on this methodology. Various implementation aspects of this technique are also addresse

    IDDQ testing of a CMOS first order sigma-delta modulator of an 8-bit oversampling ADC

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    This work presents IDDQ testing of a CMOS first order sigma-delta modulator of an 8-bit oversampling analog-to-digital converter using a built-in current sensor [BICS]. Gate-drain, source-drain, gate-source and gate-substrate bridging faults are injected using fault injection transistors. All the four faults cause varying fault currents and are successfully detected by the BICS at a good operation speed. The BICS have a negligible impact on the performance of the modulator and an external pin is provided to completely cut-off the BICS from the modulator. The modulator was designed and fabricated in 1.5 μm n-well CMOS process. The decimator was designed on Altera\u27s FLEXE20K board using Verilog. The modulator and decimator were assembled together to form a sigma-delta ADC

    Testability enhancement of a basic set of CMOS cells

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    Testing should be evaluated as the ability of the test patterns to cover realistic faults, and high quality IC products demand high quality testing. We use a test strategy based on physical design for testability (to discover both open and short faults, which are difficult or even impossible to detect). Consequentially, layout level design for testability (LLDFT) rules have been developed, which prevent the faults, or at least reduce the chance of their appearing. The main purpose of this work is to apply a practical set of LLDFT rules to the library cells designed by the Centre Nacional de Microelectrònica (CNM) and obtain a highly testable cell library. The main results of the application of the LLDFT rules (area overheads and performance degradation) are summarized and the results are significant since IC design is highly repetitive; a small effort to improve cell layout can bring about great improvement in design

    Analysis of ISSQ/IDDQ testing implementation and circuit partitioning in CMOS cell-based design

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    © 1996 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Difference between ISSQ and IDDQ testing strategies is presented, discussing the dependency of area overhead and sensing speed on the technology. The current sensor implementation style suitable for cell-based design methodology or semi-custom design style is proposed Experimental results for each strategy are discussed. Finally, different types of partitioning strategies are showed, taken into account the parallelism of the gates.Peer ReviewedPostprint (published version

    [Delta] IDDQ testing of a CMOS 12-bit charge scaling digital-to-analog converter

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    This work presents design, implementation and test of a built-in current sensor (BICS) for ∆IDDQ testing of a CMOS 12-bit charge scaling digital-to-analog converter (DAC). The sensor uses power discharge method for the fault detection. The sensor operates in two modes, the test mode and the normal mode. In the test mode, the BICS is connected to the circuit under test (CUT) which is DAC and detects abnormal currents caused by manufacturing defects. In the normal mode, BICS is isolated from the CUT. The BICS is integrated with the DAC and is implemented in a 0.5 μm n-well CMOS technology. The DAC uses charge scaling method for the design and a low voltage (0 to 2.5 V) folded cascode op-amp. The built-in current sensor (BICS) has a resolution of 0.5 μA. Faults have been introduced into DAC using fault injection transistors (FITs). The method of ∆IDDQ testing has been verified both from simulation and experimental measurements

    IDDQ Testing of Low Voltage CMOS Operational Transconductance Amplifier

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    The paper describes the design for testability (DFT) of low voltage two stage operational transconductance amplifiers based on quiescent power supply current (IDDQ) testing. IDDQ testing refers to the integral circuit testing method based upon measurement of steady state power supply current for testing both digital as well as analog VLSI circuit. A built in current sensor, which introduces insignificant performance degradation of the circuit-under-test, has been proposed to monitor the power supply quiescent current changes in the circuit under test. Moreover, the BICS requires neither an external voltage reference nor a current source and able to detect, identify and localize the circuit faults. Hence the BICS requires less area and is more efficient than the conventional current sensors. The testability has also been enhanced in the testing procedure using a simple fault-injection technique. Both bridging and open faults have been analyzed in proposed work by using n-well 0.18µm CMOS technology

    Iddq testing of a CMOS 10-bit charge scaling digital-to-analog converter

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    This work presents an effective built-in current sensor (BICS), which has a very small impact on the performance of the circuit under test (CUT). The proposed BICS works in two-modes the normal mode and the test mode. In the normal mode the BICS is isolated from the CUT due to which there is no performance degradation of the CUT. In the testing mode, our BICS detects the abnormal current caused by permanent manufacturing defects. Further more our BICS can also distinguish the type of defect induced (Gate-source short, source-drain short and drain-gate short). Our BICS requires neither an external voltage source nor current source. Hence the BICS requires less area and is more efficient than the conventional current sensors. The circuit under test is a 10-bit digital to analog converter using charge-scaling architecture

    A Behavioral Model of a Built-in Current Sensor for IDDQ Testing

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    IDDQ testing is one of the most effective methods for detecting defects in integrated circuits. Higher leakage currents in more advanced semiconductor technologies have reduced the resolution of IDDQ test. One solution is to use built-in current sensors. Several sensor techniques for measuring the current based on the magnetic field or voltage drop across the supply line have been proposed. In this work, we develop a behavioral model for a built-in current sensor measuring voltage drop and use this model to better understand sensor operation, identify the effect of different parameters on sensor resolution, and suggest design modifications to improve future sensor performance
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