Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures

The controlled creation of defect center---nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here, we demonstrate direct, maskless creation of atom-like single silicon-vacancy (SiV) centers in diamond nanostructures via focused ion beam implantation with $\sim 32$ nm lateral precision and $< 50$ nm positioning accuracy relative to a nanocavity. Moreover, we determine the Si+ ion to SiV center conversion yield to $\sim 2.5\%$ and observe a 10-fold conversion yield increase by additional electron irradiation. We extract inhomogeneously broadened ensemble emission linewidths of $\sim 51$ GHz, and close to lifetime-limited single-emitter transition linewidths down to $126 \pm13$ MHz corresponding to $\sim 1.4$-times the natural linewidth. This demonstration of deterministic creation of optically coherent solid-state single quantum systems is an important step towards development of scalable quantum optical devices

Surface Encapsulation for Low-Loss Silicon Photonics

Encapsulation layers are explored for passivating the surfaces of silicon to reduce optical absorption in the 1500-nm wavelength band. Surface-sensitive test structures consisting of microdisk resonators are fabricated for this purpose. Based on previous work in silicon photovoltaics, coatings of SiNx and SiO2 are applied under varying deposition and annealing conditions. A short dry thermal oxidation followed by a long high-temperature N2 anneal is found to be most effective at long-term encapsulation and reduction of interface absorption. Minimization of the optical loss is attributed to simultaneous reduction in sub-bandgap silicon surface states and hydrogen in the capping material.Comment: 4 pages, 3 figure

Correlation between pattern density and linewidth variation in silicon photonics waveguides

We describe the correlation between the measured width of silicon waveguides fabricated with 193 nm lithography and the local pattern density of the mask layout. In the fabrication process, pattern density can affect the composition of the plasma in a dry etching process or the abrasion rate in a planarization step. Using an optical test circuit to extract waveguide width and thickness, we sampled 5841 sites over a fabricated wafer. Using this detailed sampling, we could establish the correlation between the linewidth and average pattern density around the test circuit, as a function of the radius of influence. We find that the intra-die systematic width variation correlates most with the pattern density within a radius of 200 gm, with a correlation coefficient of 0.57. No correlation between pattern density and the intra-die systematic thickness variation is observed. These findings can be used to predict photonic circuit yield or to optimize the circuit layout to minimize the effect of local pattern density. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreemen

Measurement of the intrinsic damping constant in individual nanodisks of YIG and YIG{\textbar}Pt

We report on an experimental study on the spin-waves relaxation rate in two series of nanodisks of diameter $\phi=$300, 500 and 700~nm, patterned out of two systems: a 20~nm thick yttrium iron garnet (YIG) film grown by pulsed laser deposition either bare or covered by 13~nm of Pt. Using a magnetic resonance force microscope, we measure precisely the ferromagnetic resonance linewidth of each individual YIG and YIG{\textbar}Pt nanodisks. We find that the linewidth in the nanostructure is sensibly smaller than the one measured in the extended film. Analysis of the frequency dependence of the spectral linewidth indicates that the improvement is principally due to the suppression of the inhomogeneous part of the broadening due to geometrical confinement, suggesting that only the homogeneous broadening contributes to the linewidth of the nanostructure. For the bare YIG nano-disks, the broadening is associated to a damping constant $\alpha = 4 \cdot 10^{-4}$. A 3 fold increase of the linewidth is observed for the series with Pt cap layer, attributed to the spin pumping effect. The measured enhancement allows to extract the spin mixing conductance found to be $G_{\uparrow \downarrow}= 1.55 \cdot 10^{14}~ \Omega^{-1}\text{m}^{-2}$ for our YIG(20nm){\textbar}Pt interface, thus opening large opportunities for the design of YIG based nanostructures with optimized magnetic losses.Comment: 4 pages, 3 figure

Experimental phase-error extraction and modelling in silicon photonic arrayed waveguide gratings

We present a detailed study of parameter sweeps of silicon photonic arrayed waveguide gratings (AWG), looking into the effects of phase errors in the delay lines, which are induced by fabrication variation. We fabricated AWGs with 8 wavelength channels spaced 200 GHz and 400 GHz apart. We swept the waveguide width of the delay lines, and also performed a sweep where we introduced increments of length to the waveguides to emulate different AWG layouts and look into the effect of the phase errors. With this more detailed study we could quantitatively confirm the results of earlier studies, showing the wider waveguides reduce the effect of phase errors and dramatically improve the performance of the AWGs in terms of insertion loss and crosstalk. We also looked into the effect of rotating the layout of the circuit on the mask, and here we could show that, contrary to results with older technologies, this no longer has an effect on the current generation of devices

Metrology for electron-beam lithography and resist contrast at the sub-10 nm scale

Exploring the resolution limit of electron-beam lithography is of great interest both scientifically and technologically. However, when electron-beam lithography approaches its resolution limit, imaging and metrology of the fabricated structures by using standard scanning electron microscopy become difficult. In this work, the authors adopted transmission-electron and atomic-force microscopies to improve the metrological accuracy and to analyze the resolution limit of electron-beam lithography. With these metrological methods, the authors found that sub-5 nm sparse features could be readily fabricated by electron-beam lithography, but dense 16 nm pitch structures were difficult to yield. Measurements of point- and line-spread functions suggested that the resolution in fabricating sub-10 nm half-pitch structures was primarily limited by the resist-development processes, meaning that the development rates depended on pattern density and/or length scale.China Scholarship Council (Fellowship)United States. Dept. of Energy. Center for Excitonics (Award DE-SC0001088)Information Storage Industry ConsortiumNanoelectronics Research InitiativeNational Science Foundation (U.S.