Investigation into yield and reliability enhancement of TSV-based three-dimensional integration circuits

Three dimensional integrated circuits (3D ICs) have been acknowledged as a promising technology to overcome the interconnect delay bottleneck brought by continuous CMOS scaling. Recent research shows that through-silicon-vias (TSVs), which act as vertical links between layers, pose yield and reliability challenges for 3D design. This thesis presents three original contributions.The first contribution presents a grouping-based technique to improve the yield of 3D ICs under manufacturing TSV defects, where regular and redundant TSVs are partitioned into groups. In each group, signals can select good TSVs using rerouting multiplexers avoiding defective TSVs. Grouping ratio (regular to redundant TSVs in one group) has an impact on yield and hardware overhead. Mathematical probabilistic models are presented for yield analysis under the influence of independent and clustering defect distributions. Simulation results using MATLAB show that for a given number of TSVs and TSV failure rate, careful selection of grouping ratio results in achieving 100% yield at minimal hardware cost (number of multiplexers and redundant TSVs) in comparison to a design that does not exploit TSV grouping ratios. The second contribution presents an efficient online fault tolerance technique based on redundant TSVs, to detect TSV manufacturing defects and address thermal-induced reliability issue. The proposed technique accounts for both fault detection and recovery in the presence of three TSV defects: voids, delamination between TSV and landing pad, and TSV short-to-substrate. Simulations using HSPICE and ModelSim are carried out to validate fault detection and recovery. Results show that regular and redundant TSVs can be divided into groups to minimise area overhead without affecting the fault tolerance capability of the technique. Synthesis results using 130-nm design library show that 100% repair capability can be achieved with low area overhead (4% for the best case). The last contribution proposes a technique with joint consideration of temperature mitigation and fault tolerance without introducing additional redundant TSVs. This is achieved by reusing spare TSVs that are frequently deployed for improving yield and reliability in 3D ICs. The proposed technique consists of two steps: TSV determination step, which is for achieving optimal partition between regular and spare TSVs into groups; The second step is TSV placement, where temperature mitigation is targeted while optimizing total wirelength and routing difference. Simulation results show that using the proposed technique, 100% repair capability is achieved across all (five) benchmarks with an average temperature reduction of 75.2? (34.1%) (best case is 99.8? (58.5%)), while increasing wirelength by a small amount

A Cost-Effective Fault Tolerance Technique for Functional TSV in 3-D ICs

Regular and redundant through-silicon via (TSV) interconnects are used in fault tolerance techniques of 3-D IC. However, the fabrication process of TSVs results in defects that reduce the yield and reliability of TSVs. On the other hand, each TSV is associated with a significant amount of on-chip area overhead. Therefore, unlike the state-of-the-art fault tolerance architectures, here we propose the time division multiplexing access (TDMA)-based fault tolerance technique without using any redundant TSVs, which reduces the area overhead and enhances the yield. In the proposed technique, by means of TDMA, we reroute the signal through defect-free TSV. Subsequently, an architecture based on the proposed technique has been designed, evaluated, and validated on logic-on-logic 3-D IWLS'05 benchmark circuits using 130-nm technology node. The proposed technique is found to reduce the area overhead by 28.70%-40.60%, compared to the state-of-the-art architectures and results in a yield of 98.9%-99.8%

Design for pre-bond testability in 3D integrated circuits

In this dissertation we propose several DFT techniques specific to 3D stacked IC systems. The goal has explicitly been to create techniques that integrate easily with existing IC test systems. Specifically, this means utilizing scan- and wrapper-based techniques, two foundations of the digital IC test industry. First, we describe a general test architecture for 3D ICs. In this architecture, each tier of a 3D design is wrapped in test control logic that both manages tier test pre-bond and integrates the tier into the large test architecture post-bond. We describe a new kind of boundary scan to provide the necessary test control and observation of the partial circuits, and we propose a new design methodology for test hardcore that ensures both pre-bond functionality and post-bond optimality. We present the application of these techniques to the 3D-MAPS test vehicle, which has proven their effectiveness. Second, we extend these DFT techniques to circuit-partitioned designs. We find that boundary scan design is generally sufficient, but that some 3D designs require special DFT treatment. Most importantly, we demonstrate that the functional partitioning inherent in 3D design can potentially decrease the total test cost of verifying a circuit. Third, we present a new CAD algorithm for designing 3D test wrappers. This algorithm co-designs the pre-bond and post-bond wrappers to simultaneously minimize test time and routing cost. On average, our algorithm utilizes over 90% of the wires in both the pre-bond and post-bond wrappers. Finally, we look at the 3D vias themselves to develop a low-cost, high-volume pre-bond test methodology appropriate for production-level test. We describe the shorting probes methodology, wherein large test probes are used to contact multiple small 3D vias. This technique is an all-digital test method that integrates seamlessly into existing test flows. Our experimental results demonstrate two key facts: neither the large capacitance of the probe tips nor the process variation in the 3D vias and the probe tips significantly hinders the testability of the circuits. Taken together, this body of work defines a complete test methodology for testing 3D ICs pre-bond, eliminating one of the key hurdles to the commercialization of 3D technology.PhDCommittee Chair: Lee, Hsien-Hsin; Committee Member: Bakir, Muhannad; Committee Member: Lim, Sung Kyu; Committee Member: Vuduc, Richard; Committee Member: Yalamanchili, Sudhaka

Développement d'architectures HW/SW tolérantes aux fautes et auto-calibrantes pour les technologies Intégrées 3D

Malgré les avantages de l'intégration 3D, le test, le rendement et la fiabilité des Through-Silicon-Vias (TSVs) restent parmi les plus grands défis pour les systèmes 3D à base de Réseaux-sur-Puce (Network-on-Chip - NoC). Dans cette thèse, une stratégie de test hors-ligne a été proposé pour les interconnections TSV des liens inter-die des NoCs 3D. Pour le TSV Interconnect Built-In Self-Test (TSV-IBIST) on propose une nouvelle stratégie pour générer des vecteurs de test qui permet la détection des fautes structuraux (open et short) et paramétriques (fautes de délaye). Des stratégies de correction des fautes transitoires et permanents sur les TSV sont aussi proposées aux plusieurs niveaux d'abstraction: data link et network. Au niveau data link, des techniques qui utilisent des codes de correction (ECC) et retransmission sont utilisées pour protégé les liens verticales. Des codes de correction sont aussi utilisés pour la protection au niveau network. Les défauts de fabrication ou vieillissement des TSVs sont réparé au niveau data link avec des stratégies à base de redondance et sérialisation. Dans le réseau, les liens inter-die défaillante ne sont pas utilisables et un algorithme de routage tolérant aux fautes est proposé. On peut implémenter des techniques de tolérance aux fautes sur plusieurs niveaux. Les résultats ont montré qu'une stratégie multi-level atteint des très hauts niveaux de fiabilité avec un cout plus bas. Malheureusement, il n'y as pas une solution unique et chaque stratégie a ses avantages et limitations. C'est très difficile d'évaluer tôt dans le design flow les couts et l'impact sur la performance. Donc, une méthodologie d'exploration de la résilience aux fautes est proposée pour les NoC 3D mesh.3D technology promises energy-efficient heterogeneous integrated systems, which may open the way to thousands cores chips. Silicon dies containing processing elements are stacked and connected by vertical wires called Through-Silicon-Vias. In 3D chips, interconnecting an increasing number of processing elements requires a scalable high-performance interconnect solution: the 3D Network-on-Chip. Despite the advantages of 3D integration, testing, reliability and yield remain the major challenges for 3D NoC-based systems. In this thesis, the TSV interconnect test issue is addressed by an off-line Interconnect Built-In Self-Test (IBIST) strategy that detects both structural (i.e. opens, shorts) and parametric faults (i.e. delays and delay due to crosstalk). The IBIST circuitry implements a novel algorithm based on the aggressor-victim scenario and alleviates limitations of existing strategies. The proposed Kth-aggressor fault (KAF) model assumes that the aggressors of a victim TSV are neighboring wires within a distance given by the aggressor order K. Using this model, TSV interconnect tests of inter-die 3D NoC links may be performed for different aggressor order, reducing test times and circuitry complexity. In 3D NoCs, TSV permanent and transient faults can be mitigated at different abstraction levels. In this thesis, several error resilience schemes are proposed at data link and network levels. For transient faults, 3D NoC links can be protected using error correction codes (ECC) and retransmission schemes using error detection (Automatic Retransmission Query) and correction codes (i.e. Hybrid error correction and retransmission).For transients along a source-destination path, ECC codes can be implemented at network level (i.e. Network-level Forward Error Correction). Data link solutions also include TSV repair schemes for faults due to fabrication processes (i.e. TSV-Spare-and-Replace and Configurable Serial Links) and aging (i.e. Interconnect Built-In Self-Repair and Adaptive Serialization) defects. At network-level, the faulty inter-die links of 3D mesh NoCs are repaired by implementing a TSV fault-tolerant routing algorithm. Although single-level solutions can achieve the desired yield / reliability targets, error mitigation can be realized by a combination of approaches at several abstraction levels. To this end, multi-level error resilience strategies have been proposed. Experimental results show that there are cases where this multi-layer strategy pays-off both in terms of cost and performance. Unfortunately, one-fits-all solution does not exist, as each strategy has its advantages and limitations. For system designers, it is very difficult to assess early in the design stages the costs and the impact on performance of error resilience. Therefore, an error resilience exploration (ERX) methodology is proposed for 3D NoCs.SAVOIE-SCD - Bib.électronique (730659901) / SudocGRENOBLE1/INP-Bib.électronique (384210012) / SudocGRENOBLE2/3-Bib.électronique (384219901) / SudocSudocFranceF

Architectural Techniques to Enable Reliable and Scalable Memory Systems

High capacity and scalable memory systems play a vital role in enabling our desktops, smartphones, and pervasive technologies like Internet of Things (IoT). Unfortunately, memory systems are becoming increasingly prone to faults. This is because we rely on technology scaling to improve memory density, and at small feature sizes, memory cells tend to break easily. Today, memory reliability is seen as the key impediment towards using high-density devices, adopting new technologies, and even building the next Exascale supercomputer. To ensure even a bare-minimum level of reliability, present-day solutions tend to have high performance, power and area overheads. Ideally, we would like memory systems to remain robust, scalable, and implementable while keeping the overheads to a minimum. This dissertation describes how simple cross-layer architectural techniques can provide orders of magnitude higher reliability and enable seamless scalability for memory systems while incurring negligible overheads.Comment: PhD thesis, Georgia Institute of Technology (May 2017

A Holistic Solution for Reliability of 3D Parallel Systems

As device scaling slows down, emerging technologies such as 3D integration and carbon nanotube field-effect transistors are among the most promising solutions to increase device density and performance. These emerging technologies offer shorter interconnects, higher performance, and lower power. However, higher levels of operating temperatures and current densities project significantly higher failure rates. Moreover, due to the infancy of the manufacturing process, high variation, and defect densities, chip designers are not encouraged to consider these emerging technologies as a stand-alone replacement for Silicon-based transistors. The goal of this dissertation is to introduce new architectural and circuit techniques that can work around high-fault rates in the emerging 3D technologies, improving performance and reliability comparable to Silicon. We propose a new holistic approach to the reliability problem that addresses the necessary aspects of an effective solution such as detection, diagnosis, repair, and prevention synergically for a practical solution. By leveraging 3D fabric layouts, it proposes the underlying architecture to efficiently repair the system in the presence of faults. This thesis presents a fault detection scheme by re-executing instructions on idle identical units that distinguishes between transient and permanent faults while localizing it to the granularity of a pipeline stage. Furthermore, with the use of a dynamic and adaptive reconfiguration policy based on activity factors and temperature variation, we propose a framework that delivers a significant improvement in lifetime management to prevent faults due to aging. Finally, a design framework that can be used for large-scale chip production while mitigating yield and variation failures to bring up Carbon Nano Tube-based technology is presented. The proposed framework is capable of efficiently supporting high-variation technologies by providing protection against manufacturing defects at different granularities: module and pipeline-stage levels.PHDComputer Science & EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/168118/1/javadb_1.pd

CAD methodologies for low power and reliable 3D ICs

The main objective of this dissertation is to explore and develop computer-aided-design (CAD) methodologies and optimization techniques for reliability, timing performance, and power consumption of through-silicon-via(TSV)-based and monolithic 3D IC designs. The 3D IC technology is a promising answer to the device scaling and interconnect problems that industry faces today. Yet, since multiple dies are stacked vertically in 3D ICs, new problems arise such as thermal, power delivery, and so on. New physical design methodologies and optimization techniques should be developed to address the problems and exploit the design freedom in 3D ICs. Towards the objective, this dissertation includes four research projects. The first project is on the co-optimization of traditional design metrics and reliability metrics for 3D ICs. It is well known that heat removal and power delivery are two major reliability concerns in 3D ICs. To alleviate thermal problem, two possible solutions have been proposed: thermal-through-silicon-vias (T-TSVs) and micro-fluidic-channel (MFC) based cooling. For power delivery, a complex power distribution network is required to deliver currents reliably to all parts of the 3D IC while suppressing the power supply noise to an acceptable level. However, these thermal and power networks pose major challenges in signal routability and congestion. In this project, a co-optimization methodology for signal, power, and thermal interconnects in 3D ICs is presented. The goal of the proposed approach is to improve signal, thermal, and power noise metrics and to provide fast and accurate design space explorations for early design stages. The second project is a study on 3D IC partition. For a 3D IC, the target circuit needs to be partitioned into multiple parts then mapped onto the dies. The partition style impacts design quality such as footprint, wirelength, timing, and so on. In this project, the design methodologies of 3D ICs with different partition styles are demonstrated. For the LEON3 multi-core microprocessor, three partitioning styles are compared: core-level, block-level, and gate-level. The design methodologies for such partitioning styles and their implications on the physical layout are discussed. Then, to perform timing optimizations for 3D ICs, two timing constraint generation methods are demonstrated that lead to different design quality. The third project is on the buffer insertion for timing optimization of 3D ICs. For high performance 3D ICs, it is crucial to perform thorough timing optimizations. Among timing optimization techniques, buffer insertion is known to be the most effective way. The TSVs have a large parasitic capacitance that increases the signal slew and the delay on the downstream. In this project, a slew-aware buffer insertion algorithm is developed that handles full 3D nets and considers TSV parasitics and slew effects on delay. Compared with the well-known van Ginneken algorithm and a commercial tool, the proposed algorithm finds buffering solutions with lower delay values and acceptable runtime overhead. The last project is on the ultra-high-density logic designs for monolithic 3D ICs. The nano-scale 3D interconnects available in monolithic 3D IC technology enable ultra-high-density device integration at the individual transistor-level. The benefits and challenges of monolithic 3D integration technology for logic designs are investigated. First, a 3D standard cell library for transistor-level monolithic 3D ICs is built and their timing and power behavior are characterized. Then, various interconnect options for monolithic 3D ICs that improve design quality are explored. Next, timing-closed, full-chip GDSII layouts are built and iso-performance power comparisons with 2D IC designs are performed. Important design metrics such as area, wirelength, timing, and power consumption are compared among transistor-level monolithic 3D, gate-level monolithic 3D, TSV-based 3D, and traditional 2D designs.PhDCommittee Chair: Lim, Sung Kyu; Committee Member: Bakir, Muhannad; Committee Member: Kim, Hyesoon; Committee Member: Lee, Hsien-Hsin; Committee Member: Mukhopadhyay, Saiba

Contactless Test Access Mechanism for 3D IC

3D IC integration presents many advantages over the current 2D IC integration. It has the potential to reduce the power consumption and the physical size while supporting higher bandwidth and processing speed. Through Silicon Via’s (TSVs) are vertical interconnects between different layers of 3D ICs with a typical 5μm diameter and 50μm length. To test a 3D IC, an access mechanism is needed to apply test vectors to TSVs and observe their responses. However, TSVs are too small for access by current wafer probes and direct TSV probing may affect their physical integrity. In addition, the probe needles for direct TSV probing must be cleaned or replaced frequently. Contactless probing method resolves most of the TSV probing problems and can be employed for small-pitch TSVs. In this dissertation, contactless test access mechanisms for 3D IC have been explored using capacitive and inductive coupling techniques. Circuit models for capacitive and inductive communication links are extracted using 3D full-wave simulations and then circuit level simulations are carried out using Advanced Design System (ADS) design environment to verify the results. The effects of cross-talk and misalignment on the communication link have been investigated. A contactless TSV probing method using capacitive coupling is proposed and simulated. A prototype was fabricated using TSMC 65nm CMOS technology to verify the proposed method. The measurement results on the fabricated prototype show that this TSV probing scheme presents -55dB insertion loss at 1GHz frequency and maintains higher than 35dB signal-to-noise ratio within 5µm distance. A microscale contactless probe based on the principle of resonant inductive coupling has also been designed and simulated. Experimental measurements on a prototype fabricated in TSMC 65nm CMOS technology indicate that the data signal on the TSV can be reconstructed when the distance between the TSV and the probe remains less than 15µm

2D Parity Product Code for TSV online fault correction and detection

Through-Silicon-Via (TSV) is one of the most promising technologies to realize 3D Integrated Circuits (3D-ICs).  However, the reliability issues due to the low yield rates and the sensitivity to thermal hotspots and stress issues are preventing TSV-based 3D-ICs from being widely and efficiently used. To enhance the reliability of TSV connections, using error correction code to detect and correct faults automatically has been demonstrated as a viable solution.This paper presents a 2D Parity Product Code (2D-PPC) for TSV fault-tolerance with the ability to correct one fault and detect, at least, two faults.  In an implementation of 64-bit data and 81-bit codeword, 2D-PPC can detect over 71 faults, on average. Its encoder and decoder decrease the overall latency by 38.33% when compared to the Single Error Correction Double Error Detection code.  In addition to the high detection rates, the encoder can detect 100% of its gate failures, and the decoder can detect and correct around 40% of its individual gate failures. The squared 2D-PPC could be extended using orthogonal Latin square to support extra bit correction