A system-on-chip microwave photonic processor solves dynamic RF interference in real time with picosecond latency

Radio-frequency interference is a growing concern as wireless technology advances, with potentially life-threatening consequences like interference between radar altimeters and 5G cellular networks. Mobile transceivers mix signals with varying ratios over time, posing challenges for conventional digital signal processing (DSP) due to its high latency. These challenges will worsen as future wireless technologies adopt higher carrier frequencies and data rates. However, conventional DSPs, already on the brink of their clock frequency limit, are expected to offer only marginal speed advancements. This paper introduces a photonic processor to address dynamic interference through blind source separation (BSS). Our system-on-chip processor employs a fully integrated photonic signal pathway in the analogue domain, enabling rapid demixing of received mixtures and recovering the signal-of-interest in under 15 picoseconds. This reduction in latency surpasses electronic counterparts by more than three orders of magnitude. To complement the photonic processor, electronic peripherals based on field-programmable gate array (FPGA) assess the effectiveness of demixing and continuously update demixing weights at a rate of up to 305 Hz. This compact setup features precise dithering weight control, impedance-controlled circuit board and optical fibre packaging, suitable for handheld and mobile scenarios. We experimentally demonstrate the processor's ability to suppress transmission errors and maintain signal-to-noise ratios in two scenarios, radar altimeters and mobile communications. This work pioneers the real-time adaptability of integrated silicon photonics, enabling online learning and weight adjustments, and showcasing practical operational applications for photonic processing

A single shot coherent Ising machine based on a network of injection-locked multicore fiber lasers

Combinatorial optimization problems over large and complex systems have many applications in social networks, image processing, artificial intelligence, computational biology and a variety of other areas. Finding the optimized solution for such problems in general are usually in non-deterministic polynomial time (NP)-hard complexity class. Some NP-hard problems can be easily mapped to minimizing an lsing energy function. Here, we present an analog all-optical implementation of a coherent lsing machine (CIM) based on a network of injection-locked multicore fiber (MCF) lasers. The Zeeman terms and the mutual couplings appearing in the Ising Hamiltonians are implemented using spatial light modulators (SLMs). As a proof-of-principle, we demonstrate the use of optics to solve several Ising Hamiltonians for up to thirteen nodes. Overall, the average accuracy of the CIM to find the ground state energy was similar to 90% for 120 trials. The fundamental bottlenecks for the scalability and programmability of the presented CIM are discussed as well.Office of Naval Research (ONR) MURI program on Optical Computing [N00014-14-1-0505]; NSF ERC CIAN [EEC-0812072]; State of Arizona TRIFOpen access journalThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at [email protected]

Structural completeness in propositional logics of dependence

In this paper we prove that three of the main propositional logics of dependence (including propositional dependence logic and inquisitive logic), none of which is structural, are structurally complete with respect to a class of substitutions under which the logics are closed. We obtain an analogues result with respect to stable substitutions, for the negative variants of some well-known intermediate logics, which are intermediate theories that are closely related to inquisitive logic

Photonic neuromorphic information processing and reservoir computing

Photonic neuromorphic computing is attracting tremendous research interest now, catalyzed in no small part by the rise of deep learning in many applications. In this paper, we will review some of the exciting work that has been going in this area and then focus on one particular technology, namely, photonic reservoir computing

Decidability of admissibility:On a problem by friedman and its solution by rybakov

Rybakov (1984) proved that the admissible rules of IPC are decidable. We give a proof of the same theorem, using the same core idea, but couched in the many notions that have been developed in the mean time. In particular, we illustrate how the argument can be interpreted as using refinements of the notions of exactness and extendibility

Highly Mismatched GaAs(1-x)N(x) and Ge(1-x)Sn(x) Alloys Prepared by Ion Implantation and Ultrashort Annealing

Doping allows us to modify semiconductor materials for desired properties such as conductivity, bandgap, and / or lattice parameter. A small portion replacement of the highly mismatched isoelectronic dopants with the host atoms of a semiconductor can result in drastic variation of its structural, optical, and / or electronic properties. Here, the term "mismatch" describes the properties of atom size, ionicity, and / or electronegativity. This thesis presents the fabrication of two kinds of highly mismatched semiconductor alloys, i.e., Ge(1-x)Sn(x) and GaAs(1-x)N(x). The structural and optical properties of the prepared Ge(1-x)Sn(x) and GaAs(1-x)N(x) have been investigated. The results suggest an efficient above-solubility doping induced by non-equilibrium methods of ion implantation and ultrashort annealing. Pulsed laser melting promotes the regrowth of monocrystalline Ge(1-x)Sn(x), whereas flash lamp annealing brings about the formation of high quality GaAs(1-x)N(x) with room temperature photoluminescence. The bandgap modification of Ge(1-x)Sn(x) and GaAs(1-x)N(x) has been verified by optical measurements of spectroscopic ellipsometry and photoluminescence, respectively. In addition, effective defect engineering in GaAs has been achieved by flash lamp annealing, by which a quasi-temperature-stable photoluminescence at 1.3 µm has been obtained.Dotierung ermöglicht es, die Eigenschaften von Halbleitermaterialien, wie Leitfähigkeit, aber auch Bandabstand und / oder Gitterkonstanten gezielt zu verändern. Wenn ein Halbleiter mit einer kleinen Menge unterschiedliche Fremdatome dotiert wird, kann dies in einer drastischen Modifikation der strukturellen, optischen und / oder elektronischen Eigenschaften resultieren. Der Begriff "unterschiedlich" bedeutet hier die Eigenschaften von Atomgröße, Ioniztät und / oder Elektronegativität. Diese Doktorarbeit beschreibt die Herstellung von zwei Arten von stark fehlangepassten Halbleiterlegierungen: Ge(1-x)Sn(x) und GaAs(1-x)N(x). Die strukturellen und optischen Eigenschaften von Ge(1-x)Sn(x) und GaAs(1-x)N(x) wurden untersucht. Die Ergebnisse deuten auf eine effiziente Dotierung oberhalb der Löslichkeit, induziert durch die Nicht-Gleichgewichtsverfahren Ionenimplantation und Ultrakurzzeit-Ausheilung. Gepulstes Laserschmelzen ermöglicht das Nachwachsen von monokristallinem Ge(1-x)Sn(x), während die Blitzlampenausheilung in der Bildung von GaAs(1-x)N(x) hoher Qualität mit Photolumineszenz bei Raumtemperatur resultiert. Die Änderung der Bandlücke von Ge(1-x)Sn(x) und GaAs(1-x)N(x) wurde durch die optischen Methoden der spektroskopischen Ellipsometrie und Photolumineszenz verifiziert. Darüber hinaus konnte in ausgeheiltem GaAs eine quasi-temperaturstabile Photolumineszenz bei 1,3 µm beobachtet werden