Formation of high-quality Ag-based ohmic contacts to p-type GaN

Low resistance and high reflectance ohmic contacts on p-type GaN were achieved using an Ag-based metallization scheme. Oxidation annealing was the key to achieve ohmic behavior of Ag-based contacts on p-type GaN. A low contact resistivity of similar to 5x10(-5) Omega cm(2) could be achieved from Me (=Ni, Ir, Pt, or Ru)/Ag (50/1200 angstrom) contacts after annealing at 500 degrees C for 1 min in O(2) ambient. Oxidation annealing promoted the out-diffusion of Ga atoms from the GaN layer, and Ga atoms dissolved in the in-diffused Ag layer with the formation of Ag-Ga solid solution, resulting in ohmic contact formation. Using Ru/Ni/Au (500/200/500 angstrom) overlayers on the Me/Ag contacts, the excessive incorporation of oxygen molecules into the contact interfacial region, and the out-diffusion and agglomeration of Ag, were effectively prevented during oxidation annealing. As a result, a high reflectance of 87.2% at the 460 nm wavelength and a smooth surface morphology could be obtained simultaneously. (C) 2008 The Electrochemical Society.open111618sciescopu

Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC

The light output of deep ultraviolet (UV-C) AlGaN light-emitting diodes (LEDs) is limited due to their poor light extraction efficiency (LEE). To improve the LEE of AlGaN LEDs, we developed a fabrication technology to process AlGaN LEDs grown on SiC into thin-film flip-chip LEDs (TFFC LEDs) with high LEE. This process transfers the AlGaN LED epi onto a new substrate by wafer-to-wafer bonding, and by removing the absorbing SiC substrate with a highly selective SF6 plasma etch that stops at the AlN buffer layer. We optimized the inductively coupled plasma (ICP) SF6 etch parameters to develop a substrate-removal process with high reliability and precise epitaxial control, without creating micromasking defects or degrading the health of the plasma etching system. The SiC etch rate by SF6 plasma was ~46 \mu m/hr at a high RF bias (400 W), and ~7 \mu m/hr at a low RF bias (49 W) with very high etch selectivity between SiC and AlN. The high SF6 etch selectivity between SiC and AlN was essential for removing the SiC substrate and exposing a pristine, smooth AlN surface. We demonstrated the epi-transfer process by fabricating high light extraction TFFC LEDs from AlGaN LEDs grown on SiC. To further enhance the light extraction, the exposed N-face AlN was anisotropically etched in dilute KOH. The LEE of the AlGaN LED improved by ~3X after KOH roughening at room temperature. This AlGaN TFFC LED process establishes a viable path to high external quantum efficiency (EQE) and power conversion efficiency (PCE) UV-C LEDs.Comment: 22 pages, 6 figures. (accepted in Semiconductor Science and Technology, SST-105156.R1 2018

Mid-infrared LEDs versus thermal emitters in IR dynamic scene simulation devices

In a radical departure from conventional thermal emitter-based dynamic IR scene simulation devices, we have tested InAsSbP/InAs LEDs grown by liquid phase epitaxy and tuned at several peak-emitting wavelengths inside the mid-IR band. Light uniformity, radiation apparent temperature (Ta), thermal resistance, and self heating details were characterized at T=300 K in the microscale by calibrated infrared cameras in the 3-5 mm (light pattern) and 8-12 μm (heat pattern) bands. We show that LEDs are capable of simulating very hot (Ta ³740 K) targets as well as cold objects and low observable with respect to a particular background. We resume that cost effective LEDs enable a platform for photonic scene projection devices able to compete with thermal microemitter MEMS technology in testing and stimulating very high-speed infrared sensors used for military and commercial applications. Proposals on how to further increase LEDs performance are given

Indium as an efficient ohmic contact to N-face n-GaN of GaN-based vertical light-emitting diodes

We propose indium (In), a low work function and nitride-forming element, as an efficient ohmic contact layer to N-face n-GaN. While conventional Al-based ohmic contacts show severe degradation after annealing at 300 C, In-based ohmic contacts display considerable improvement in contact resistivity. The annealing-induced enhancement of ohmic behavior in In-based contacts is attributed to the formation of an InN interfacial layer, which is supported by x-ray photoemission spectroscopy measurements. These results suggest that In is of particular importance for application as reliable ohmic contacts to n-GaN of GaN-based vertical light-emitting diodes.open3

Active-matrix GaN micro light-emitting diode display with unprecedented brightness

Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 10⁶ cd/m²

Optimal overlayer inspired by Photuris firefly improves light-extraction efficiency of existing light-emitting diodes

In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer design is inspired by the microstructure found in the firefly Photuris sp. The actual dimensions and material composition have been optimized to take into account the high refractive index of the GaN diode stack. This two-dimensional pattern contrasts other designs by its unusual profile, its larger dimensions and the fact that it can be tailored to an existing diode design rather than requiring a complete redesign of the diode geometry. The gain of light extraction reaches values up to 55% with respect to the reference unprocessed LED.Comment: 9 pages, 9 Figures, published in Optics Expres