March CRF: an Efficient Test for Complex Read Faults in SRAM Memories

In this paper we study Complex Read Faults in SRAMs, a combination of various malfunctions that affect the read operation in nanoscale memories. All the memory elements involved in the read operation are studied, underlining the causes of the realistic faults concerning this operation. The requirements to cover these fault models are given. We show that the different causes of read failure are independent and may coexist in nanoscale SRAMs, summing their effects and provoking Complex Read Faults, CRFs. We show that the test methodology to cover this new read faults consists in test patterns that match the requirements to cover all the different simple read fault models. We propose a low complexity (?2N) test, March CRF, that covers effectively all the realistic Complex Read Fault

Concepts in LSI servo-control-electronics

This thesis deals with the engineering aspects of control electronics. It examines modern concepts of servo-control theory in the light of recent developments in the technology of monolithic circuits. Applicational considerations are slanted towards Aerospace standards of reliability and power-consumption economy. Conclusions drawn from the discussion of fabrication constraints and performance requirements lead to a preference for digital implementations. Yield problems on one hand and aging effects on the other greatly reduce the feasibility rating of analog arrays. Current practice in servo-control electronics revolves around purely analog implementations, sampled-data systems and Primitive on-off arrangements. The motivation behind the status quo and the justification of the proposed approach are discussed in detail. The organization of digital systems is examined in order to demonstrate the feasibility of Large Scale Integration (LSI) in servo-control electronics. The questions of hardware versatility and power-dissipation economy are emphasized from technological, economical and applicational standpoints. Self-Contained loops and Computer-Aided systems investigated within the ramifications of a functional division into Detectors, Compensators and Drivers. Differential Frequency Modulation is assumed to effect the information transfer from the Pick-Off coil of the transducer to tie input ports of the Ratemeter. Pulse Width-Frequency Modulation is employed at the Driver-Torquer interface. The operation of the Ratameter conforms with classical logic, except for a slope-independent Level-Crossing-Discriminator (LCD), which is designed to provide a time-resolution gain of 3 db. over conventional frequency detectors. Circuit detais of the LCD are given in order to illustrate differences between integrated and discrete circuit configurations. Two types of compensators are discussed: canonic pole-zero arrangements with ROM multipliers and Kalman fiiters with stored-program implementations of covariance equations. The concept of Pulse-Width-Frequency-Modulation (PWFM) is introduced co reconcile the dynamic-range requirements or servo-control drivers with the time-resolution limitations of power transistors. Simple means of implementation of PWFM are also given; they take the form. of a combination of logic-gates and DDA elements, a technique which could be used to advantage in other applications, especially digital detection and filtration

Semiconductor Memory Applications in Radiation Environment, Hardware Security and Machine Learning System

abstract: Semiconductor memory is a key component of the computing systems. Beyond the conventional memory and data storage applications, in this dissertation, both mainstream and eNVM memory technologies are explored for radiation environment, hardware security system and machine learning applications. In the radiation environment, e.g. aerospace, the memory devices face different energetic particles. The strike of these energetic particles can generate electron-hole pairs (directly or indirectly) as they pass through the semiconductor device, resulting in photo-induced current, and may change the memory state. First, the trend of radiation effects of the mainstream memory technologies with technology node scaling is reviewed. Then, single event effects of the oxide based resistive switching random memory (RRAM), one of eNVM technologies, is investigated from the circuit-level to the system level. Physical Unclonable Function (PUF) has been widely investigated as a promising hardware security primitive, which employs the inherent randomness in a physical system (e.g. the intrinsic semiconductor manufacturing variability). In the dissertation, two RRAM-based PUF implementations are proposed for cryptographic key generation (weak PUF) and device authentication (strong PUF), respectively. The performance of the RRAM PUFs are evaluated with experiment and simulation. The impact of non-ideal circuit effects on the performance of the PUFs is also investigated and optimization strategies are proposed to solve the non-ideal effects. Besides, the security resistance against modeling and machine learning attacks is analyzed as well. Deep neural networks (DNNs) have shown remarkable improvements in various intelligent applications such as image classification, speech classification and object localization and detection. Increasing efforts have been devoted to develop hardware accelerators. In this dissertation, two types of compute-in-memory (CIM) based hardware accelerator designs with SRAM and eNVM technologies are proposed for two binary neural networks, i.e. hybrid BNN (HBNN) and XNOR-BNN, respectively, which are explored for the hardware resource-limited platforms, e.g. edge devices.. These designs feature with high the throughput, scalability, low latency and high energy efficiency. Finally, we have successfully taped-out and validated the proposed designs with SRAM technology in TSMC 65 nm. Overall, this dissertation paves the paths for memory technologies’ new applications towards the secure and energy-efficient artificial intelligence system.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Low Power Memory/Memristor Devices and Systems

This reprint focusses on achieving low-power computation using memristive devices. The topic was designed as a convenient reference point: it contains a mix of techniques starting from the fundamental manufacturing of memristive devices all the way to applications such as physically unclonable functions, and also covers perspectives on, e.g., in-memory computing, which is inextricably linked with emerging memory devices such as memristors. Finally, the reprint contains a few articles representing how other communities (from typical CMOS design to photonics) are fighting on their own fronts in the quest towards low-power computation, as a comparison with the memristor literature. We hope that readers will enjoy discovering the articles within

Towards Energy-Efficient and Reliable Computing: From Highly-Scaled CMOS Devices to Resistive Memories

The continuous increase in transistor density based on Moore\u27s Law has led us to highly scaled Complementary Metal-Oxide Semiconductor (CMOS) technologies. These transistor-based process technologies offer improved density as well as a reduction in nominal supply voltage. An analysis regarding different aspects of 45nm and 15nm technologies, such as power consumption and cell area to compare these two technologies is proposed on an IEEE 754 Single Precision Floating-Point Unit implementation. Based on the results, using the 15nm technology offers 4-times less energy and 3-fold smaller footprint. New challenges also arise, such as relative proportion of leakage power in standby mode that can be addressed by post-CMOS technologies. Spin-Transfer Torque Random Access Memory (STT-MRAM) has been explored as a post-CMOS technology for embedded and data storage applications seeking non-volatility, near-zero standby energy, and high density. Towards attaining these objectives for practical implementations, various techniques to mitigate the specific reliability challenges associated with STT-MRAM elements are surveyed, classified, and assessed herein. Cost and suitability metrics assessed include the area of nanomagmetic and CMOS components per bit, access time and complexity, Sense Margin (SM), and energy or power consumption costs versus resiliency benefits. In an attempt to further improve the Process Variation (PV) immunity of the Sense Amplifiers (SAs), a new SA has been introduced called Adaptive Sense Amplifier (ASA). ASA can benefit from low Bit Error Rate (BER) and low Energy Delay Product (EDP) by combining the properties of two of the commonly used SAs, Pre-Charge Sense Amplifier (PCSA) and Separated Pre-Charge Sense Amplifier (SPCSA). ASA can operate in either PCSA or SPCSA mode based on the requirements of the circuit such as energy efficiency or reliability. Then, ASA is utilized to propose a novel approach to actually leverage the PV in Non-Volatile Memory (NVM) arrays using Self-Organized Sub-bank (SOS) design. SOS engages the preferred SA alternative based on the intrinsic as-built behavior of the resistive sensing timing margin to reduce the latency and power consumption while maintaining acceptable access time

Second-order neural core for bioinspired focal-plane dynamic image processing in CMOS

Based on studies of the mammalian retina, a bioinspired model for mixed-signal array processing has been implemented on silicon. This model mimics the way in which images are processed at the front-end of natural visual pathways, by means of programmable complex spatio-temporal dynamic. When embedded into a focal-plane processing chip, such a model allows for online parallel filtering of the captured image; the outcome of such processing can be used to develop control feedback actions to adapt the response of photoreceptors to local image features. Beyond simple resistive grid filtering, it is possible to program other spatio-temporal processing operators into the model core, such as nonlinear and anisotropic diffusion, among others. This paper presents analog and mixed-signal very large-scale integration building blocks to implement this model, and illustrates their operation through experimental results taken from a prototype chip fabricated in a 0.5-μm CMOS technology.European Union IST 2001 38097Ministerio de Ciencia y Tecnología TIC 2003 09817 C02 01Office of Naval Research (USA) N00014021088