11,125 research outputs found
Cross-Layer Resiliency Modeling and Optimization: A Device to Circuit Approach
The never ending demand for higher performance and lower power consumption pushes the VLSI industry to further scale the technology down. However, further downscaling of technology at nano-scale leads to major challenges. Reduced reliability is one of them, arising from multiple sources e.g. runtime variations, process variation, and transient errors. The objective of this thesis is to tackle unreliability with a cross layer approach from device up to circuit level
Statistical circuit simulations - from ‘atomistic’ compact models to statistical standard cell characterisation
This thesis describes the development and application of statistical circuit simulation methodologies to analyse digital circuits subject to intrinsic parameter fluctuations. The specific nature of intrinsic parameter fluctuations are discussed, and we explain the crucial importance to the semiconductor industry of developing design tools which accurately account for their effects. Current work in the area is reviewed, and three important factors are made clear: any statistical circuit simulation methodology must be based on physically correct, predictive models of device variability; the statistical compact models describing device operation must be characterised for accurate transient analysis of circuits; analysis must be carried out on realistic circuit components. Improving on previous efforts in the field, we posit a statistical circuit simulation methodology which accounts for all three of these factors. The established 3-D Glasgow atomistic simulator is employed to predict electrical characteristics for devices aimed at digital circuit applications, with gate lengths from 35 nm to 13 nm. Using these electrical characteristics, extraction of BSIM4 compact models is carried out and their accuracy in performing transient analysis using SPICE is validated against well characterised mixed-mode TCAD simulation results for 35 nm devices. Static d.c. simulations are performed to test the methodology, and a useful analytic model to predict hard logic fault limitations on CMOS supply voltage scaling is derived as part of this work. Using our toolset, the effect of statistical variability introduced by random discrete dopants on the dynamic behaviour of inverters is studied in detail. As devices scaled, dynamic noise margin variation of an inverter is increased and higher output load or input slew rate improves the noise margins and its variation. Intrinsic delay variation based on CV/I delay metric is also compared using ION and IEFF definitions where the best estimate is obtained when considering ION and input transition time variations. Critical delay distribution of a path is also investigated where it is shown non-Gaussian. Finally, the impact of the cell input slew rate definition on the accuracy of the inverter cell timing characterisation in NLDM format is investigated
State Dependent Statistical Timing Model for Voltage Scaled Circuits
This paper presents a novel statistical state-dependent timing model for
voltage over scaled (VoS) logic circuits that accurately and rapidly finds the
timing distribution of output bits. Using this model erroneous VoS circuits can
be represented as error-free circuits combined with an error-injector. A case
study of a two point DFT unit employing the proposed model is presented and
compared to HSPICE circuit simulation. Results show an accurate match, with
significant speedup gains
An advanced Framework for efficient IC optimization based on analytical models engine
En base als reptes sorgits a conseqüència de l'escalat de la tecnologia, la present tesis desenvolupa i analitza un conjunt d'eines orientades a avaluar la sensibilitat a la propagació d'esdeveniments SET en circuits microelectrònics. S'han proposant varies mètriques de propagació de SETs considerant l'impacto dels emmascaraments lògic, elèctric i combinat lògic-elèctric. Aquestes mètriques proporcionen una via d'anàlisi per quantificar tant les regions més susceptibles a propagar SETs com les sortides més susceptibles de rebre'ls. S'ha desenvolupat un conjunt d'algorismes de cerca de camins sensibilitzables altament adaptables a múltiples aplicacions, un sistema lògic especific i diverses tècniques de simplificació de circuits. S'ha demostrat que el retard d'un camí donat depèn dels vectors de sensibilització aplicats a les portes que formen part del mateix, essent aquesta variació de retard comparable a la atribuïble a les variacions paramètriques del proces.En base a los desafíos surgidos a consecuencia del escalado de la tecnología, la presente tesis desarrolla y analiza un conjunto de herramientas orientadas a evaluar la sensibilidad a la propagación de eventos SET en circuitos microelectrónicos. Se han propuesto varias métricas de propagación de SETs considerando el impacto de los enmascaramientos lógico, eléctrico y combinado lógico-eléctrico. Estas métricas proporcionan una vía de análisis para cuantificar tanto las regiones más susceptibles a propagar eventos SET como las salidas más susceptibles a recibirlos. Ha sido desarrollado un conjunto de algoritmos de búsqueda de caminos sensibilizables altamente adaptables a múltiples aplicaciones, un sistema lógico especifico y diversas técnicas de simplificación de circuitos. Se ha demostrado que el retardo de un camino dado depende de los vectores de sensibilización aplicados a las puertas que forman parte del mismo, siendo esta variación de retardo comparable a la atribuible a las variaciones paramétricas del proceso.Based on the challenges arising as a result of technology scaling, this thesis develops and evaluates a complete framework for SET propagation sensitivity. The framework comprises a number of processing tools capable of handling circuits with high complexity in an efficient way. Various SET propagation metrics have been proposed considering the impact of logic, electric and combined logic-electric masking. Such metrics provide a valuable vehicle to grade either in-circuit regions being more susceptible of propagating SETs toward the circuit outputs or circuit outputs more susceptible to produce SET. A quite efficient and customizable true path finding algorithm with a specific logic system has been constructed and its efficacy demonstrated on large benchmark circuits. It has been shown that the delay of a path depends on the sensitization vectors applied to the gates within the path. In some cases, this variation is comparable to the one caused by process parameters variation
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IC design for reliability
textAs the feature size of integrated circuits goes down to the nanometer scale,
transient and permanent reliability issues are becoming a significant concern for circuit
designers. Traditionally, the reliability issues were mostly handled at the device level as a
device engineering problem. However, the increasing severity of reliability challenges
and higher error rates due to transient upsets favor higher-level design for reliability
(DFR). In this work, we develop several methods for DFR at the circuit level.
A major source of transient errors is the single event upset (SEU). SEUs are
caused by high-energy particles present in the cosmic rays or emitted by radioactive
contaminants in the chip packaging materials. When these particles hit a N+/P+ depletion
region of an MOS transistor, they may generate a temporary logic fault. Depending on
where the MOS transistor is located and what state the circuit is at, an SEU may result in
a circuit-level error. We analyze SEUs both in combinational logic and memories
(SRAM). For combinational logic circuit, we propose FASER, a Fast Analysis tool of
Soft ERror susceptibility for cell-based designs. The efficiency of FASER is achieved
through its static and vector-less nature. In order to evaluate the impact of SEU on SRAM, a theory for estimating dynamic noise margins is developed analytically. The
results allow predicting the transient error susceptibility of an SRAM cell using a closedform
expression.
Among the many permanent failure mechanisms that include time-dependent
oxide breakdown (TDDB), electro-migration (EM), hot carrier effect (HCE), and
negative bias temperature instability (NBTI), NBTI has recently become important.
Therefore, the main focus of our work is NBTI. NBTI occurs when the gate of PMOS is
negatively biased. The voltage stress across the gate generates interface traps, which
degrade the threshold voltage of PMOS. The degraded PMOS may eventually fail to meet
timing requirement and cause functional errors. NBTI becomes severe at elevated
temperatures. In this dissertation, we propose a NBTI degradation model that takes into
account the temperature variation on the chip and gives the accurate estimation of the
degraded threshold voltage.
In order to account for the degradation of devices, traditional design methods add
guard-bands to ensure that the circuit will function properly during its lifetime. However,
the worst-case based guard-bands lead to significant penalty in performance. In this
dissertation, we propose an effective macromodel-based reliability tracking and
management framework, based on a hybrid network of on-chip sensors, consisting of
temperature sensors and ring oscillators. The model is concerned specifically with NBTIinduced
transistor aging. The key feature of our work, in contrast to the traditional
tracking techniques that rely solely on direct measurement of the increase of threshold
voltage or circuit delay, is an explicit macromodel which maps operating temperature to
circuit degradation (the increase of circuit delay). The macromodel allows for costeffective
tracking of reliability using temperature sensors and is also essential for
enabling the control loop of the reliability management system. The developed methods improve the over-conservatism of the device-level, worstcase
reliability estimation techniques. As the severity of reliability challenges continue to
grow with technology scaling, it will become more important for circuit designers/CAD
tools to be equipped with the developed methods.Electrical and Computer Engineerin
A Radiation-Hardened CMOS Full-Adder Based on Layout Selective Transistor Duplication
Single event transients (SETs) have become increasingly problematic for modern CMOS circuits due to the continuous scaling
of feature sizes and higher operating frequencies. Especially when involving safety-critical or radiation-exposed applications, the circuits
must be designed using hardening techniques. In this brief, we present a new radiation-hardened-by-design full-adder cell on 45-nm technology.
The proposed design is hardened against transient errors by selective duplication of sensitive transistors based on a comprehensive radiationsensitivity analysis. Experimental results show a 62% reduction in the SET sensitivity of the proposed design with respect to the unhardened one. Moreover, the proposed hardening technique leads to improvement in performance and power overhead and zero area overhead with respect to the state-of-the-art techniques applied to the unhardened full-adder cell
Analysis and Evaluation of PUF-based SoC Designs for Security Applications
This paper presents a critical analysis and statistical evaluation of two categories of Physically Unclonable Functions (PUFs): ring oscillator PUF and a new proposed adapted latch based PUF. The main contribution is that of measuring the properties of PUF which provide the basic information for using them in security applications. The original method involved the conceptual design of adapted latch based PUFs and ring oscillator PUFs in combination with peripheral devices in order to create an environment for experimental analysis of PUF properties. Implementation, testing and analysis of results followed. This approach has applications on high level security
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