High Performance Integrated Circuit Blocks for High-IF Wideband Receivers

Due to the demand for high‐performance radio frequency (RF) integrated circuit design in the past years, a system‐on‐chip (SoC) that enables integration of analog and digital parts on the same die has become the trend of the microelectronics industry. As a result, a major requirement of the next generation of wireless devices is to support multiple standards in the same chip‐set. This would enable a single device to support multiple peripheral applications and services. Based on the aforementioned, the traditional superheterodyne front‐end architecture is not suitable for such applications as it would require a complete receiver for each standard to be supported. A more attractive alternative is the highintermediate frequency (IF) radio architecture. In this case the signal is digitalized at an intermediate frequency such as 200MHz. As a consequence, the baseband operations, such as down‐conversion and channel filtering, become more power and area efficient in the digital domain. Such architecture releases the specifications for most of the front‐end building blocks, but the linearity and dynamic range of the ADC become the bottlenecks in this system. The requirements of large bandwidth, high frequency and enough resolution make such ADC very difficult to realize. Many ADC architectures were analyzed and Continuous‐Time Bandpass Sigma‐Delta (CT‐BP‐ΣΔ) architecture was found to be the most suitable solution in the high‐IF receiver architecture since they combine oversampling and noise shaping to get fairly high resolution in a limited bandwidth. A major issue in continuous‐time networks is the lack of accuracy due to powervoltage‐ temperature (PVT) tolerances that lead to over 20% pole variations compared to their discrete‐time counterparts. An optimally tuned BP ΣΔ ADC requires correcting for center frequency deviations, excess loop delay, and DAC coefficients. Due to these undesirable effects, a calibration algorithm is necessary to compensate for these variations in order to achieve high SNR requirements as technology shrinks. In this work, a novel linearization technique for a Wideband Low‐Noise Amplifier (LNA) targeted for a frequency range of 3‐7GHz is presented. Post‐layout simulations show NF of 6.3dB, peak S21 of 6.1dB, and peak IIP3 of 21.3dBm, respectively. The power consumption of the LNA is 5.8mA from 2V. Secondly, the design of a CMOS 6th order CT BP‐ΣΔ modulator running at 800 MHz for High‐IF conversion of 10MHz bandwidth signals at 200 MHz is presented. A novel transconductance amplifier has been developed to achieve high linearity and high dynamic range at high frequencies. A 2‐bit quantizer with offset cancellation is alsopresented. The sixth‐order modulator is implemented using 0.18 um TSMC standard analog CMOS technology. Post‐layout simulations in cadence demonstrate that the modulator achieves a SNDR of 78 dB (~13 bit) performance over a 14MHz bandwidth. The modulator’s static power consumption is 107mW from a supply power of ± 0.9V. Finally, a calibration technique for the optimization of the Noise Transfer Function CT BP ΣΔ modulators is presented. The proposed technique employs two test tones applied at the input of the quantizer to evaluate the noise transfer function of the ADC, using the capabilities of the Digital Signal Processing (DSP) platform usually available in mixed‐mode systems. Once the ADC output bit stream is captured, necessary information to generate the control signals to tune the ADC parameters for best Signal‐to‐Quantization Noise Ratio (SQNR) performance is extracted via Least‐ Mean Squared (LMS) software‐based algorithm. Since the two tones are located outside the band of interest, the proposed global calibration approach can be used online with no significant effect on the in‐band content

Design of sigma-delta modulators for analog-to-digital conversion intensively using passive circuits

This thesis presents the analysis, design implementation and experimental evaluation of passiveactive discrete-time and continuous-time Sigma-Delta (ΣΔ) modulators (ΣΔMs) analog-todigital converters (ADCs). Two prototype circuits were manufactured. The first one, a discrete-time 2nd-order ΣΔM, was designed in a 130 nm CMOS technology. This prototype confirmed the validity of the ultra incomplete settling (UIS) concept used for implementing the passive integrators. This circuit, clocked at 100 MHz and consuming 298 μW, achieves DR/SNR/SNDR of 78.2/73.9/72.8 dB, respectively, for a signal bandwidth of 300 kHz. This results in a Walden FoMW of 139.3 fJ/conv.-step and Schreier FoMS of 168 dB. The final prototype circuit is a highly area and power efficient ΣΔM using a combination of a cascaded topology, a continuous-time RC loop filter and switched-capacitor feedback paths. The modulator requires only two low gain stages that are based on differential pairs. A systematic design methodology based on genetic algorithm, was used, which allowed decreasing the circuit’s sensitivity to the circuit components’ variations. This continuous-time, 2-1 MASH ΣΔM has been designed in a 65 nm CMOS technology and it occupies an area of just 0.027 mm2. Measurement results show that this modulator achieves a peak SNR/SNDR of 76/72.2 dB and DR of 77dB for an input signal bandwidth of 10 MHz, while dissipating 1.57 mW from a 1 V power supply voltage. The ΣΔM achieves a Walden FoMW of 23.6 fJ/level and a Schreier FoMS of 175 dB. The innovations proposed in this circuit result, both, in the reduction of the power consumption and of the chip size. To the best of the author’s knowledge the circuit achieves the lowest Walden FOMW for ΣΔMs operating at signal bandwidth from 5 MHz to 50 MHz reported to date

High Performance Integrated Circuit Blocks for High-IF Wideband Receivers

Due to the demand for high‐performance radio frequency (RF) integrated circuit design in the past years, a system‐on‐chip (SoC) that enables integration of analog and digital parts on the same die has become the trend of the microelectronics industry. As a result, a major requirement of the next generation of wireless devices is to support multiple standards in the same chip‐set. This would enable a single device to support multiple peripheral applications and services. Based on the aforementioned, the traditional superheterodyne front‐end architecture is not suitable for such applications as it would require a complete receiver for each standard to be supported. A more attractive alternative is the highintermediate frequency (IF) radio architecture. In this case the signal is digitalized at an intermediate frequency such as 200MHz. As a consequence, the baseband operations, such as down‐conversion and channel filtering, become more power and area efficient in the digital domain. Such architecture releases the specifications for most of the front‐end building blocks, but the linearity and dynamic range of the ADC become the bottlenecks in this system. The requirements of large bandwidth, high frequency and enough resolution make such ADC very difficult to realize. Many ADC architectures were analyzed and Continuous‐Time Bandpass Sigma‐Delta (CT‐BP‐ΣΔ) architecture was found to be the most suitable solution in the high‐IF receiver architecture since they combine oversampling and noise shaping to get fairly high resolution in a limited bandwidth. A major issue in continuous‐time networks is the lack of accuracy due to powervoltage‐ temperature (PVT) tolerances that lead to over 20% pole variations compared to their discrete‐time counterparts. An optimally tuned BP ΣΔ ADC requires correcting for center frequency deviations, excess loop delay, and DAC coefficients. Due to these undesirable effects, a calibration algorithm is necessary to compensate for these variations in order to achieve high SNR requirements as technology shrinks. In this work, a novel linearization technique for a Wideband Low‐Noise Amplifier (LNA) targeted for a frequency range of 3‐7GHz is presented. Post‐layout simulations show NF of 6.3dB, peak S21 of 6.1dB, and peak IIP3 of 21.3dBm, respectively. The power consumption of the LNA is 5.8mA from 2V. Secondly, the design of a CMOS 6th order CT BP‐ΣΔ modulator running at 800 MHz for High‐IF conversion of 10MHz bandwidth signals at 200 MHz is presented. A novel transconductance amplifier has been developed to achieve high linearity and high dynamic range at high frequencies. A 2‐bit quantizer with offset cancellation is alsopresented. The sixth‐order modulator is implemented using 0.18 um TSMC standard analog CMOS technology. Post‐layout simulations in cadence demonstrate that the modulator achieves a SNDR of 78 dB (~13 bit) performance over a 14MHz bandwidth. The modulator’s static power consumption is 107mW from a supply power of ± 0.9V. Finally, a calibration technique for the optimization of the Noise Transfer Function CT BP ΣΔ modulators is presented. The proposed technique employs two test tones applied at the input of the quantizer to evaluate the noise transfer function of the ADC, using the capabilities of the Digital Signal Processing (DSP) platform usually available in mixed‐mode systems. Once the ADC output bit stream is captured, necessary information to generate the control signals to tune the ADC parameters for best Signal‐to‐Quantization Noise Ratio (SQNR) performance is extracted via Least‐ Mean Squared (LMS) software‐based algorithm. Since the two tones are located outside the band of interest, the proposed global calibration approach can be used online with no significant effect on the in‐band content

Efficient Continuous-Time Sigma-Delta Converters for High Frequency Applications

Over the years Continuous-Time (CT) Sigma-Delta (ΣΔ) modulators have received a lot of attention due to their ability to efficiently digitize a variety of signals, and suitability for many different applications. Because of their tolerance to component mismatch, the easy to drive input structure, as well as intrinsic anti-aliasing filtering and noise shaping abilities, CTΣΔ modulators have become one of the most popular data-converter type for high dynamic range and moderate/wide bandwidth. This trend is the result of faster CMOS technologies along with design innovations such as better architectures and faster amplifiers. In other words, CTΣΔ modulators are starting to offer the best of both worlds, with high resolution and high bandwidth. This dissertation focuses on the bandwidth and resolution of CTΣΔ modulators. The goal of this research is to use the noise shaping benefits of CTΣΔ modulators for different wireless applications, while achieving high resolution and/or wide bandwidth. For this purpose, this research focuses on two different application areas that demand speed and resolution. These are a low-noise high-resolution time-to-digital converter (TDC), ideal for digital phase lock loops (PLL), and a very high-speed, wide-bandwidth CTΣΔ modulator for wireless communication. The first part of this dissertation presents a new noise shaping time-to-digital converter, based on a CTΣΔ modulator. This is intended to reduce the in-band phase noise of a high frequency digital phase lock loop (PLL) without reducing its loop bandwidth. To prove the effectiveness of the proposed TDC, 30GHz and a 40GHz fractional-N digital PLL are designed as a signal sources for a 240GHz FMCW radar system. Both prototypes are fabricated in a 65nm CMOS process. The standalone TDC achieves 81dB dynamic range and 13.2 equivalent number of bits (ENOB) with 176fs integrated-rms noise from 1MHz bandwidth. The in-band phase noise of the 30GHz digital fractional-N PLL is measured as -87dBc/Hz at a 100kHz offset which is equivalent to -212.6dBc/Hz2 normalized in-band phase noise. The second part of this dissertation focuses on high-speed (GS/s) CTΣΔ modulators for wireless communication, and introduces a new time-interleaved reference data weighted averaging (TI-RDWA) architecture suitable for GS/s CTΣΔ modulators. This new architecture shapes the digital-to-analog converter (DAC) mismatch effects in a CTΣΔ modulator at GS/s operating speeds. It allows us to use smaller DAC unit sizes to reduce area and power consumption for the same bandwidth. The prototype 5GS/s CTΣΔ modulator with TI-RDWA is fabricated in 40nm CMOS and it achieves 156MHz bandwidth, 70dB dynamic range, 84dB SFDR and a Schreier FoM of 158.3dB.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/138763/1/bdayanik_1.pd

Low-power double-sampled delta-sigma modulator for broadband applications

High speed and high resolution analog-to-digital converter is a key building block for broadband wireless communications, high definition video applications, medical images and so on. By leveraging the down scaling of the latest CMOS technology and the noise shaping properties, delta-sigma (ΔΣ) ADCs are able to achieve wide-band operation and high accuracy simultaneously. At first in this thesis, two novel techniques which can be applied to high performance ΔΣ ADC design are proposed. The first one is a modulator architectural innovation that is able to effectively solve the feedback timing constraints in a double-sampled ΔΣ modulator. The second one is a transistor level improvement to reduce the hardware consumption in a standard Date Weighted Averaging (DWA) realization. Next, charge-pump (CP) based switched-capacitor (SC) integrator is discussed. A cross-coupling technique is proposed to eliminate parasitic capacitor effect in a CP based SC integrator. Also design methodologies are introduced to incorporate a modified CP based SC integrator into a low-distortion ΔΣ modulator. A second-order ΔΣ modulator was designed and simulated to verify the proposed modulator topology. Finally, design of a double-sampled broadband 12-bit ΔΣ modulator is presented. To achieve very low power consumption, this modulator utilizes the following two key design techniques: 1. Double sampled integrator to increase the effective over-sampling ratio. 2. Capacitor reset technique allows the use of only one feedback DAC at the front end of the modulator to completely eliminate the quantization noise folding back. A 2+2 cascaded topology with 3-bit internal quantizer is used in this ΔΣ modulator to adequately suppress the quantization noise while guarantee the loop stability. This ΔΣ modulator was fabricated in a 90nm digital CMOS process and achieves an SNDR of 70dB within a 5MHz signal bandwidth. The modulator occupies a silicon area of 0.5mm² and consumes 10mW with a supply voltage of 1.2V

A Second-Order ΣΔ ADC using sputtered IGZO TFTs with multilayer dielectric

This dissertation combines materials science and electronics engineering to implement, for the first time, a 2nd-order ∑∆ ADC using oxide TFTs. The transistors employ a sputtered IGZO semiconductor and an optimizeddielectric layer, based on mixtures of sputtered Ta2O5and SiO2. These dielectrics are studied in multilayer configurations, being the best results achieved for 7 layers: IG7.5 MV/cm, while keeping κ>10, yielding a major improvement over Ta2O5single-layer. After annealing at 200 °C, TFTs with these dielectrics exhibit μSAT≈13 cm2/Vs, On/Off≈107and S≈0.2 V/dec. An a-Si:H TFT RPI model is adapted to simulate these devices with good fitting to experimental data. Concerning circuits, the ∑∆ architecture is naturally selected to deal with device mismatch. After design optimization, ADC simulations achieve SNDR≈57 dB, DR≈65 dB and power dissipation, approximately, of 22 mW (VDD=10 V), which are above the current state-of-the-art for competing thinfilm technologies, such as organics or even LTPS. Mask layouts are currently under verification to enable successful circuit fabrication in the next months.This work is a major step towards the design of complex multifunctional electronic systems with oxide TFT technology, being integrated in ongoing EU-funded and FCT-funded research projects at CENIMAT and UNINOVA

K-Delta-1-Sigma Modulators for Wideband Analog-to-Digital Conversion

As CMOS technology scales, the transistor speed increases enabling higher speed communications and more complex systems. These benefits come at the cost of decreasing inherent device gain, increased transistor leakage currents, and additional mismatches due to process variations. All of these drawbacks affect the design of high-resolution analog-to-digital converters (ADCs) in nano-CMOS processes. To move towards an ADC topology useful in these small processes a first-order K-Delta-1-Sigma (KD1S) modulator-based ADC was proposed. The KD1S topology employs inherent time-interleaving with a shared integrator and K-quantizing feedback paths and can potentially achieve significantly higher conversion bandwidths when compared to the traditional switched-capacitor delta-sigma ADCs. The shared integrator in the KD1S modulator settles over a half the clock period and the op-amp is designed to operate at the base clock frequency. In this dissertation, the first-order KD1S modulator topology is analyzed for the effects of the non-idealities introduced by the K-path operation of the switched-capacitor integrator. Then, the concept of KD1S modulator is extended to higher-order modulators in order to achieve superior noise-shaping performance. A systematic synthesis method has been developed to design and simulate higher-order KD1S modulators at the system level. In order to demonstrate the developed theory, a prototype second-order KD1S modulator has been designed and fabricated in a 500-nm CMOS technology. The second-order KD1S modulator exhibits wideband noise-shaping with an SNDR of 42.7 dB or 6.81 bits in resolution for Kpath = 8 paths, an effective sampling rate of ƒs,new=800 MHz, effective oversampling ratio Kpath•OSR=64 and a signal bandwidth of 6.25 MHz. The second-order KD1S modulator consumes an average current of 3.0 mA from the 5 V supply and occupies an area of 0.55 mm2

System Design of a Wide Bandwidth Continuous-Time Sigma-Delta Modulator

Sigma-delta analog-to-digital converters are gaining in popularity in recent times because of their ability to trade-off resolutions in the time and voltage domains. In particular, continuous-time modulators are finding more acceptance at higher bandwidths due to the additional advantages they provide, such as better power efficiency and inherent anti-aliasing filtering, compared to their discrete-time counterparts. This thesis work presents the system level design of a continuous-time low-pass sigma-delta modulator targeting 11 bits of resolution over 100MHz signal bandwidth. The design considerations and tradeoffs involved at the system level are presented. The individual building blocks in the modulators are modeled with non-idealities and specifications for the various blocks are obtained in detail. Simulation results obtained from behavioral models of the system in MATLAB and Cadence environment show that a signal-to-noise-and-distortion-ratio (SNDR) of 69.6dB is achieved. A loop filter composed of passive LC sections is utilized in place of integrators or resonators used in traditional modulator implementations. Gain in the forward signal path is realized using active circuits based on simple transconductance stages. A novel method to compensate for excess delay in the loop without using an extra summing amplifier is proposed

Energy Efficiency in Communications and Networks

The topic of "Energy Efficiency in Communications and Networks" attracts growing attention due to economical and environmental reasons. The amount of power consumed by information and communication technologies (ICT) is rapidly increasing, as well as the energy bill of service providers. According to a number of studies, ICT alone is responsible for a percentage which varies from 2% to 10% of the world power consumption. Thus, driving rising cost and sustainability concerns about the energy footprint of the IT infrastructure. Energy-efficiency is an aspect that until recently was only considered for battery driven devices. Today we see energy-efficiency becoming a pervasive issue that will need to be considered in all technology areas from device technology to systems management. This book is seeking to provide a compilation of novel research contributions on hardware design, architectures, protocols and algorithms that will improve the energy efficiency of communication devices and networks and lead to a more energy proportional technology infrastructure