1,404 research outputs found
Application of disposable chiral plasmonics for biosensing and Raman spectroscopy
This thesis explores the capabilities of disposable chiral plasmonic metafilm assays, termed Disposable Plasmonic Assays, as a promising platform for biosensing and surface-enhanced Raman spectroscopy. The sensing and Raman properties of these metafilms arise from the excitation of surface plasmons when exposed to incident light. These plasmonic properties strongly depend on the geometric characteristics of the constituent nanostructures found in the metafilms. Specifically, the primary nanostructure employed throughout this research is the chiral 'shuriken' star, which generates chiral electromagnetic fields exhibiting greater chiral asymmetry than circularly polarized light.
Monitoring changes in the resonance positions of the characteristic optical rotatory dispersion spectra produced by the Disposable Plasmonic Assays allows for the observation of surface binding events. By measuring resonance shift data and through the utilisation of various gold film functionalisation techniques, these assays are demonstrated as versatile, label-free biosensing platforms capable of specifically detecting a wide range of target proteins and virus particles from complex solutions. Furthermore, the multiplexing performance of these assays is showcased, enabling the detection of multiple different antigens and virions in a single experiment. These results highlight the potential of plasmonic metafilms as rapid and disposable point-of-care immunoassays for diagnostic applications.
In addition to biosensing, the chiral geometry of Disposable Plasmonic Assays is exploited for the chiral discrimination of metal nanoparticles and small molecules using Surface Enhanced Raman Spectroscopy (SERS). By linking helicoid shaped gold nanoparticles to the metafilm surface via a dithiol linker, the chiral properties of both nanoparticles and metafilms combine, resulting in the creation of differential electromagnetic 'hotspot' regions based on their symmetry combinations. The electromagnetic intensity in these regions corresponds to the SERS signal obtained from the achiral dithiol linker molecule, facilitating a deeper understanding of the chirally dependent SERS phenomenon. These findings serve to validate and explain the differential SERS data obtained enantiomers of biomolecules and drug molecules from silver modified Disposable Plasmonic Assays
Accurate quantum transport modelling and epitaxial structure design of high-speed and high-power In0.53Ga0.47As/AlAs double-barrier resonant tunnelling diodes for 300-GHz oscillator sources
Terahertz (THz) wave technology is envisioned as an appealing and conceivable solution in the context of several potential high-impact applications, including sixth generation (6G) and beyond consumer-oriented ultra-broadband multi-gigabit wireless data-links, as well as highresolution imaging, radar, and spectroscopy apparatuses employable in biomedicine, industrial processes, security/defence, and material science. Despite the technological challenges posed by the THz gap, recent scientific advancements suggest the practical viability of THz systems. However, the development of transmitters (Tx) and receivers (Rx) based on compact semiconductor devices operating at THz frequencies is urgently demanded to meet the performance requirements calling from emerging THz applications.
Although several are the promising candidates, including high-speed III-V transistors and photo-diodes, resonant tunnelling diode (RTD) technology offers a compact and high performance option in many practical scenarios. However, the main weakness of the technology is currently represented by the low output power capability of RTD THz Tx, which is mainly caused by the underdeveloped and non-optimal device, as well as circuit, design implementation approaches. Indeed, indium phosphide (InP) RTD devices can nowadays deliver only up to around 1 mW of radio-frequency (RF) power at around 300 GHz. In the context of THz wireless data-links, this severely impacts the Tx performance, limiting communication distance and data transfer capabilities which, at the current time, are of the order of few tens of gigabit per second below around 1 m.
However, recent research studies suggest that several milliwatt of output power are required to achieve bit-rate capabilities of several tens of gigabits per second and beyond, and to reach several metres of communication distance in common operating conditions. Currently, the shortterm target is set to 5−10 mW of output power at around 300 GHz carrier waves, which would allow bit-rates in excess of 100 Gb/s, as well as wireless communications well above 5 m distance, in first-stage short-range scenarios. In order to reach it, maximisation of the RTD highfrequency RF power capability is of utmost importance. Despite that, reliable epitaxial structure design approaches, as well as accurate physical-based numerical simulation tools, aimed at RF power maximisation in the 300 GHz-band are lacking at the current time.
This work aims at proposing practical solutions to address the aforementioned issues. First, a physical-based simulation methodology was developed to accurately and reliably simulate the static current-voltage (IV ) characteristic of indium gallium arsenide/aluminium arsenide (In-GaAs/AlAs) double-barrier RTD devices. The approach relies on the non-equilibrium Green’s function (NEGF) formalism implemented in Silvaco Atlas technology computer-aided design (TCAD) simulation package, requires low computational budget, and allows to correctly model In0.53Ga0.47As/AlAs RTD devices, which are pseudomorphically-grown on lattice-matched to InP substrates, and are commonly employed in oscillators working at around 300 GHz. By selecting the appropriate physical models, and by retrieving the correct materials parameters, together with a suitable discretisation of the associated heterostructure spatial domain through finite-elements, it is shown, by comparing simulation data with experimental results, that the developed numerical approach can reliably compute several quantities of interest that characterise the DC IV curve negative differential resistance (NDR) region, including peak current, peak voltage, and voltage swing, all of which are key parameters in RTD oscillator design.
The demonstrated simulation approach was then used to study the impact of epitaxial structure design parameters, including those characterising the double-barrier quantum well, as well as emitter and collector regions, on the electrical properties of the RTD device. In particular, a comprehensive simulation analysis was conducted, and the retrieved output trends discussed based on the heterostructure band diagram, transmission coefficient energy spectrum, charge distribution, and DC current-density voltage (JV) curve. General design guidelines aimed at enhancing the RTD device maximum RF power gain capability are then deduced and discussed.
To validate the proposed epitaxial design approach, an In0.53Ga0.47As/AlAs double-barrier RTD epitaxial structure providing several milliwatt of RF power was designed by employing the developed simulation methodology, and experimentally-investigated through the microfabrication of RTD devices and subsequent high-frequency characterisation up to 110 GHz. The analysis, which included fabrication optimisation, reveals an expected RF power performance of up to around 5 mW and 10 mW at 300 GHz for 25 μm2 and 49 μm2-large RTD devices, respectively, which is up to five times higher compared to the current state-of-the-art. Finally, in order to prove the practical employability of the proposed RTDs in oscillator circuits realised employing low-cost photo-lithography, both coplanar waveguide and microstrip inductive stubs are designed through a full three-dimensional electromagnetic simulation analysis.
In summary, this work makes and important contribution to the rapidly evolving field of THz RTD technology, and demonstrates the practical feasibility of 300-GHz high-power RTD devices realisation, which will underpin the future development of Tx systems capable of the power levels required in the forthcoming THz applications
Beam scanning by liquid-crystal biasing in a modified SIW structure
A fixed-frequency beam-scanning 1D antenna based on Liquid Crystals (LCs) is designed for application in 2D scanning with lateral alignment. The 2D array environment imposes full decoupling of adjacent 1D antennas, which often conflicts with the LC requirement of DC biasing: the proposed design accommodates both. The LC medium is placed inside a Substrate Integrated Waveguide (SIW) modified to work as a Groove Gap Waveguide, with radiating slots etched on the upper broad wall, that radiates as a Leaky-Wave Antenna (LWA). This allows effective application of the DC bias voltage needed for tuning the LCs. At the same time, the RF field remains laterally confined, enabling the possibility to lay several antennas in parallel and achieve 2D beam scanning. The design is validated by simulation employing the actual properties of a commercial LC medium
Nanoscale Field Emission Devices for High-Temperature and High-Frequency Operation
Field emission—the quantum-mechanical tunneling of electrons from the surface of a material into vacuum by means of a strong electric field—has been studied for over a century. However, the usage of devices based on this mechanism has been limited to a handful of niche applications such as high-power RF systems and field emission displays. The preference for solid-state devices relies on their low cost, long lifetimes, reduced power consumption, ease of integrability, and simple and scalable fabrication. Nonetheless, with the advent of modern fabrication techniques, it has been possible to build field emission devices with nanoscale dimensions that offer several advantages over traditional semiconductor devices. The use of vacuum allows ballistic transport with no lattice scattering. As device capacitance can be engineered by tuning the geometry, these devices are appealing for high-frequency operation. Vacuum is also inherently immune to harsh operating conditions such as high temperature and radiation, which is desirable for aerospace, nuclear, and military applications. In addition, even though field emission requires substantial electric fields, by exploiting the nanoscale gaps that can be easily fabricated with state-of-the-art lithographic capabilities, we can expect operating voltages comparable to CMOS. Thus, vacuum emission devices have the potential to greatly improve upon the limitations of current technologies.
In this work, we experimentally demonstrate various design paradigms to develop nanoscale field emission devices for high-temperature environments and high-frequency operation. First, we propose suspended lateral two- and four-terminal devices. By removing the underlying solid substrate, we aim to increase the resistance of the leakage current pathways that emerge at elevated temperatures. Tungsten is the chosen electrode material due to its low work function and ability to withstand high temperatures. Our next architecture consists of a multi-tip two-terminal array, which exclusively relies on the inherent fast response of field emission. Due to the strong non-linearity in the emission characteristic, frequency mixing is measured. Lastly, we combine field emission with plasmonics to conceive devices that can be modulated both electrically and optically at telecommunication wavelength. By taking advantage of the strong confinement and significant optical field enhancement of surface plasmon polaritons, we seek to minimize the applied voltages required for field emission as well as the necessary laser powers for photoemission towards the development of high-speed, low-power, nanoscale optoelectronic systems.</p
Laser Micromachining: An Enabling Technology for Functional Surfaces and Materials
L'abstract è presente nell'allegato / the abstract is in the attachmen
Towards Electrically Injected Semiconductor Nanowire Lasers
We are at a tipping point of the next industrial revolution, which will change or day-to-day lives. Increased needs around communication and data storage will require networks that can handle around 175 zettabyte by the end of 2025. Optical interconnect technology is a promising candidate, as it can transmit data at lightning speeds within chips and boards in efficient way. Laser is the backbone of such optical circuits and is often integrated with its electrical counterpart for power inputs. With the advances in fabrication techniques, micron-sized III-V semiconductor lasers are used in data communication, medicine, robotics, green energy, military etc. However, there is still a strong need to make these lasers even smaller and more energy efficient for optical interconnect technology. Nanowires are a suitable candidate for such devices due to their large surface area-to-volume ratio, confinement of photons in two dimensions and ease in integration with other substrates. However, research of III-V semiconductor nanowire Fabry-Perot cavity lasers is still in the early stages. A lot more research need to be done to realise devices, in particular those that are electrically powered, that are manufacturable for practical applications.
In this thesis, in-depth theoretical and experimental studies to fabricate nanowire lasers are presented. First, numerical modelling to optimise the dimensions of nanowires are performed to achieve low threshold lasing. Following this, epitaxial growth optimisation is carried out to achieve the desired dimensions of nanowires. Subsequently, fabrication of two different types of devices, single nanowire and array of nanowires is done. For single nanowire devices, an InP p-i-n axial structure is explored. These devices display light emitting diode (LED) characteristics, but unfortunately, they fail at higher injected current before lasing is observed. The potential causes of degradation of devices are high metal absorption, lower gain due to smaller active region and high free carrier absorption. To overcome high metal absorption and lower gain, radial p-n junction structures are investigated and significant improvement in the device performance is observed. However, the devices also fail at higher current injection levels prior to lasing threshold.
To overcome high free carrier absorption, transparent conducting oxides (TCOs) are used as a dopant layer forming a heterojunction with InP nanowire arrays as well as a contact layer. TCOs exhibit metal-like conductivity but with a high degree of transparency. Simulations to compute the optimum nanowire dimensions to obtain lasing, such as diameter and length, are carried out. For n-type TCOs, ZnO and SnOx are explored as potential materials, while for p-type TCOs, SnxNiyOz is evaluated. Optical, compositional and electrical properties of the TCOs are investigated at various deposition conditions. Junction properties as well as band alignment at the TCO-InP interface are studied to have insight of carrier injection and transport across the heterojunction. Finally, electroluminescence characteristics are measured and all the devices show promising LED behaviour, but fail to lase due to excessive heating at higher current injection levels due to carrier crowding, non-uniformity and shifting of the recombination region. For ease of integration, cost effectiveness and minimising the shift of the recombination region, flexible nanowire array devices are also demonstrated, which provide LED characteristics, but still fail to lase. Potential reasons and steps towards improvement such as modified fabrication process to mitigate recombination inside the substrate, proper heat sinking and incorporation of quantum wells and quantum dots to enhance gain are investigated. Nevertheless, the knowledge and understanding gained from devices fabricated in this thesis are promising steps towards realising electrically injected III-V semiconductor nanowire lasers
- …