1,566 research outputs found

    Mode-locked 1.5 micrometers semiconductor optical amplifier fiber ring

    Get PDF

    Dynamic modal analysis of monolithic mode-locked semiconductor lasers

    Get PDF
    We analyze the advantages and applicability limits of the mode-coupling approach to active, passive, hybrid, and harmonic mode-locking in diode lasers. A simple, computationally efficient numerical model is proposed and applied to several traditional and advanced laser constructions and regimes, including high-frequency pulse emission by symmetric and asymmetric colliding pulse mode-locking, and locking properties of hybrid modelocked Fabry–Perot and distributed Bragg reflector lasers

    High‐Energy and Short‐Pulse Generation from Passively Mode‐ Locked Ytterbium‐Doped Double‐Clad Fiber Lasers

    Get PDF
    Mode‐locked ytterbium‐doped fiber lasers capable of producing nanosecond‐, picosecond‐ or femtosecond‐level pulses with high energy or power have many advantages for various applications such as material processing and laser surgery. Firstly, in this chapter, the principles and methods used in passively mode‐locked fiber lasers are briefly described. Secondly, mathematical modeling of all normal dispersion ytterbium‐doped fiber lasers for analyzing the pulse generation and propagation has been established and simulated with the generalized nonlinear Schrödinger equation. Thirdly, short pulses generated from passively mode‐locked fiber lasers have been demonstrated with carbon nanotube– deposited D‐shaped fiber as the saturable absorber. Different pulse width can be realized with different parameters of the laser cavity. Finally, the main amplification methods for short laser pulses have been discussed, and a broad prospect for applications of various technologies using short‐pulse fiber lasers is further introduced

    High-speed Modelocked Semiconductor Lasers And Applications In Coherent Photonic Systems

    Get PDF
    1.55-”m high-speed modelocked semiconductor lasers are theoretically and experimentally studied for various coherent photonic system applications. The modelocked semiconductor lasers (MSLs) are designed with high-speed (\u3e5 GHz) external cavity configurations utilizing monolithic two-section curved semiconductor optical amplifiers. By exploiting the saturable absorber section of the monolithic device, passive or hybrid mode-locking techniques are used to generate short optical pulses with broadband optical frequency combs. Laser frequency stability is improved by applying the Pound-Drever-Hall (PDH) frequency stabilization technique to the MSLs. The improved laser performance after the frequency stabilization (a frequency drifting of less than 350 MHz), is extensively studied with respect to the laser linewidth (~ 3 MHz), the relative intensity noise (RIN) (\u3c -150 dB/Hz), as well as the modal RIN (~ 3 dB reduction). MSL to MSL, and tunable laser to MSL synchronization is demonstrated by using a dual-mode injection technique and a modulation sideband injection technique, respectively. Dynamic locking behavior and locking bandwidth are experimentally and theoretically studied. Stable laser synchronization between two MSLs is demonstrated with an injection seed power on the order of a few microwatt. Several coherent heterodyne detections based on the synchronized MSL systems are demonstrated for applications in microwave photonic links and ultra-dense wavelength division multiplexing (UD-WDM) system. In addition, efficient coherent homodyne balanced receivers based on synchronized MSLs are developed and demonstrated for a spectrally phase-encoded optical CDMA (SPE-OCDMA) system

    Modeling of mode-locking in a laser with spatially separate gain media

    Get PDF
    We present a novel laser mode-locking scheme and discuss its unusual properties and feasibility using a theoretical model. A large set of single-frequency continuous-wave lasers oscillate by amplification in spatially separated gain media. They are mutually phase-locked by nonlinear feedback from a common saturable absorber. As a result, ultra short pulses are generated. The new scheme offers three significant benefits: the light that is amplified in each medium is continuous wave, thereby avoiding issues related to group velocity dispersion and nonlinear effects that can perturb the pulse shape. The set of frequencies on which the laser oscillates, and therefore the pulse repetition rate, is controlled by the geometry of resonator-internal optical elements, not by the cavity length. Finally, the bandwidth of the laser can be controlled by switching gain modules on and off. This scheme offers a route to mode-locked lasers with high average output power, repetition rates that can be scaled into the THz range, and a bandwidth that can be dynamically controlled. The approach is particularly suited for implementation using semiconductor diode laser arrays.Comment: 13 pages, 5 figures, submitted to Optics Expres

    Self-pulsing dynamics in a cavity soliton laser

    Get PDF
    The dynamics of a broad-area vertical-cavity surface-emitting laser (VCSEL) with frequency-selective feedback supporting bistable spatial solitons is analyzed experimentally and theoretically. The transient dynamics of a switch-on of a soliton induced by an external optical pulse shows strong self-pulsing at the external-cavity round-trip time with at least ten modes excited. The numerical analysis indicates an even broader bandwidth and a transient sweep of the center frequency. It is argued that mode-locking of spatial solitons is an interesting and viable way to achieve three-dimensional, spatio-temporal self-localization and that the transients observed are preliminary indications of a transient cavity light bullet in the dynamics, though on a non negligible background

    1.55 ÎŒm integrated modelocked semiconductor lasers

    Get PDF
    This thesis presents research on, and the realization of compact InP/InGaAsP integrated passively modelocked lasers (MLL) operating in the 1.55 ”m wavelength range. The goal of this work was to obtain modelocked laser designs at a repetition rate of several tens of GHz that can be integrated with other devices on a single semiconductor wafer. These modelocked lasers should be usable as optical pulse sources in an all-optical clock recovery application in optical time domain multiplexing (OTDM) systems. The integration of the modelocked laser on a single chip is achieved using the active-passive integration technique. This technique allows one to integrate active components such as optical amplifiers and saturable absorbers, with passive components such as waveguides and optical power splitters. The modelocking mechanism of the integrated lasers is passive modelocking using a slow saturable absorber. The saturable absorber is a short optical amplifier section that is reversely biased. The work was largely concentrated on ring laser type cavities. Such a configuration has many advantages. Firstly it allows one to fix the repetition rate of the laser by photolithography. It also provides better performance thanks to the two counter-propagating pulses which collide in the saturable absorber. Finally the output of the laser can be directly interconnected on the same wafer with other devices such as an all-optical switch or a pulse compressor. From the first realization of integrated ring modelocked lasers (RMLLs) using active-passive integration and a demonstration of a device at 27 GHz, many issues came up and have been addressed in this thesis. First, the understanding of the modelocking mechanism and other dynamics needed to be better understood. To address this issue, a simulation tool of RMLL was developed. Simulation results showed that symmetrical cavities show a much wider operating range for stable modelocking. The transitions from a modelocked state of the laser to another operating regime have been explored with the model. The simulation tool requires parameters describing the gain properties of the material. These have been accurately measured using a new type of high resolution spectrum analyzer. Another important issue which came out from the first RMLL realization was the necessity to reduce all the reflections inside the modelocked laser cavity and in particular the reflections at the active-passive interfaces. Special efforts have therefore been made to characterize the optical losses and reflections at those interfaces and to minimize them to a sufficiently low value of less than -50 dB. To validate techniques of fabrication and materials required to achieve high repetition rate RMLL designs, the realization of more compact devices through the use of deep etching has been investigated in this thesis. Results are presented on, at that time, the world’s most compact AWG using a double-etch technique, and the world’s first InAs/InP quantum dot (QD) lasers employing narrow deeply etched ridge active waveguides in the 1.55 ”m wavelength region. Before realizing a final RMLL design on an active-passive wafer, a series of allactive devices has been designed, fabricated and characterized. These all-active chips provided material for the gain measurements and allowed to look further into short pulse laser characterization techniques and to test designs for reducing reflections from other intra-cavity components. The results of the all-active MLLs have been obtained in different configurations. Firstly, 20 GHz and 40 GHz linear all active Fabry-PĂ©rot MLL (FPMLL) lasers have been successfully fabricated. Modelocking has been achieved with these lasers in the colliding pulse modelocked (CPM) and self CPM configurations. Pulse lengths down to 1.6 ps (at 20 GHz) have been observed. A 40 GHz repetition rate was demonstrated in a CPM laser with a Saturable Absorber (SA) positioned in the center of the FP cavity. All-active 15 GHz RMLLs have also been successfully fabricated. These lasers show a relatively good timing stability due to the ring configuration. Measured output pulses are highly chirped and an FWHM bandwidth of up to 4.5 nm was obtained. Such lasers with high bandwidth pulses and compatible with active-passive integration are of great interest for optical code division multiple access applications, where information is coded in the spectrum. Finally, first results from MLLs realized on an active-passive wafer are presented. Passive modelocking has been demonstrated in these integrated Extended Cavity FPMLLs with minimized intra-cavity reflections. Pulses of 2.1 ps duration and with a small pedestal have been observed. The pulses are close to transform-limited. The longer timescale dynamics of the EC-FPMLLs are reduced compared to the all-active FPMLLs, which is understood to be due to the short amplifier section. The use of a MLL at 20 GHz for the all optical clock recovery (AOCR) application and a special RMLL design for AOCR at 40 GHz are presented in the last chapter of this thesis. Many characteristics of the AOCR at 20 GHz could be quantified. The design of the 40 GHz RMLL laser is for an active-passive wafer. The design utilizes all the minimizations of small intra-cavity reflections. For the AOCR application a novel way to couple the optical input signal into the MLL via a separate waveguide is presented. Based on the accumulated results presented in this thesis the timing jitter of the clock recovered from this laser is expected to be sufficiently low to comply with the telecom requirements at 40 GHz
    • 

    corecore