Recent Advances in Ambipolar Transistors for Functional Applications

Ambipolar transistors represent a class of transistors where positive (holes) and negative (electrons) charge carriers both can transport concurrently within the semiconducting channel. The basic switching states of ambipolar transistors are comprised of common offâ state and separated onâ state mainly impelled by holes or electrons. During the past years, diverse materials are synthesized and utilized for implementing ambipolar charge transport and their further emerging applications comprising ambipolar memory, synaptic, logic, and lightâ emitting transistors on account of their special bidirectional carrierâ transporting characteristic. Within this review, recent developments of ambipolar transistor field involving fundamental principles, interface modifications, selected semiconducting material systems, device structures, ambipolar characteristics, and promising applications are highlighted. The existed challenges and prospective for researching ambipolar transistors in electronics and optoelectronics are also discussed. It is expected that the review and outlook are well timed and instrumental for the rapid progress of academic sector of ambipolar transistors in lighting, display, memory, as well as neuromorphic computing for artificial intelligence.Ambipolar transistors represent transistors that allow synchronous transport of electrons and holes and their accumulation within semiconductors. This review provides a comprehensive summary of recent advances in various semiconducting materials realized in ambipolar transistors and their functional memory, synapse, logic, as well as lightâ emitting applications.Peer Reviewedhttps://deepblue.lib.umich.edu/bitstream/2027.42/151885/1/adfm201902105_am.pdfhttps://deepblue.lib.umich.edu/bitstream/2027.42/151885/2/adfm201902105.pd

MOS Meets NEMS: The Born of Hybrid Devices

Nowadays, the semiconductor industry is reaching an impasse due to the scaling-down process according to Moore’s Law, initiated back in 1960s, for the Metal-Oxide-Technology in use. To overcome such issue, the semiconductor industry started to foresee novel materials that allow the development of nanodevices with a broad variety of characteristics such as high switching speed, low power consumption, robust, among others; that can overcome the inherent issues for Silicon. A few “exotic materials” appear such as Graphene, MoS2, BN-h, among others. However, the time for the novel technology to be mature is a few decades in the future. To allow the “exotic materials” to mature, the semiconductor industry requires of novel nano-structures that can overcome a few of the issues that Silicon-based technology is facing today. A key alternative is based on hybrid structures. Hybrid structures encompass two dissimilar technologies nano-electromechanical systems with the well known Metal-Oxide-Technology. The hybrid nano-structure provides a broad variety of options to be used in such as transistors, memories and sensors. These hybrid devices can give enough time for the technology based on “exotic materials” to be reliable as Silicon based is