Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations

We present the detailed results of the application of mathematical optimization algorithms to transistor sizing in a full-adder cell design, to obtain the maximum expected fabrication yield. The approach takes into account all the fabrication process parameter variations specified in an industrial PDK, in addition to operating condition range and NBTI aging. The final design solutions present transistor sizing, which depart from intuitive transistor sizing criteria and show dramatic yield improvements, which have been verified by Monte Carlo SPICE analysis

CAD Techniques for Robust FPGA Design Under Variability

The imperfections in the semiconductor fabrication process and uncertainty in operating environment of VLSI circuits have emerged as critical challenges for the semiconductor industry. These are generally termed as process and environment variations, which lead to uncertainty in performance and unreliable operation of the circuits. These problems have been further aggravated in scaled nanometer technologies due to increased process variations and reduced operating voltage. Several techniques have been proposed recently for designing digital VLSI circuits under variability. However, most of them have targeted ASICs and custom designs. The flexibility of reconfiguration and unknown end application in FPGAs make design under variability different for FPGAs compared to ASICs and custom designs, and the techniques proposed for ASICs and custom designs cannot be directly applied to FPGAs. An important design consideration is to minimize the modifications in architecture and circuit to reduce the cost of changing the existing FPGA architecture and circuit. The focus of this work can be divided into three principal categories, which are, improving timing yield under process variations, improving power yield under process variations and improving the voltage profile in the FPGA power grid. The work on timing yield improvement proposes routing architecture enhancements along with CAD techniques to improve the timing yield of FPGA designs. The work on power yield improvement for FPGAs selects a low power dual-Vdd FPGA design as the baseline FPGA architecture for developing power yield enhancement techniques. It proposes CAD techniques to improve the power yield of FPGAs. A mathematical programming technique is proposed to determine the parameters of the buffers in the interconnect such as the sizes of the transistors and threshold voltage of the transistors, all within constraints, such that the leakage variability is minimized under delay constraints. Two CAD techniques are investigated and proposed to improve the supply voltage profile of the power grids in FPGAs. The first technique is a place and route technique and the second technique is a logic clustering technique to reduce IR-drops and spatial variation of supply voltage in the power grid

Age-Acknowledging Reliable Multiplier Design with Adaptive Hold Logic

Digital multipliers are among the most critical arithmetic functional units. The overall performance of these systems depends on the throughput of the multiplier. Meanwhile, the negative bias temperature instability effect occurs when a pMOS transistor is under negative bias (Vgs = −Vdd), increasing the threshold voltage of the pMOS transistor, and reducing multiplier speed. A similar phenomenon, positive bias temperature instability, occurs when an nMOS transistor is under positive bias. Both effects degrade transistor speed, and in the long term, the system may fail due to timing violations. Therefore, it is important to design reliable high performance multipliers. In this paper, we propose an aging-aware multiplier design with novel adaptive hold logic (AHL) circuit. The multiplier is able to provide higher throughput through the variable latency and can adjust the AHL circuit to mitigate performance degradation that is due to the aging effect. Moreover, the proposed architecture can be applied to a column- or row-bypassing multiplier. The experimental results show that our proposed architecture with 16 ×16 and 32 ×32 column-bypassing multipliers can attain up to 62.88% and 76.28% performance improvement, respectively, compared with 16×16 and 32×32 fixed-latency column-bypassing multipliers. Furthermore, our proposed architecture with 16 × 16 and 32 × 32 row-bypassing multipliers can achieve up to 80.17% and 69.40% performance improvement as compared with 16×16 and 32 × 32 fixed-latency row-bypassing multipliers

Methodology for Standby Leakage Power Reduction in Nanometer-Scale CMOS Circuits

In nanometer-scale CMOS technology, leakage power has become a major component of the total power dissipation due to the downscaling of threshold voltage and gate oxide thickness. The leakage power consumption has received even more attention by increasing demand for mobile devices. Since mobile devices spend a majority of their time in a standby mode, the leakage power savings in standby state is critical to extend battery lifetime. For this reason, low power has become a major factor in designing CMOS circuits. In this dissertation, we propose a novel transistor reordering methodology for leakage reduction. Unlike previous technique, the proposed method provides exact reordering rules for minimum leakage formation by considering all leakage components. Thus, this method formulates an optimized structure for leakage reduction even in complex CMOS logic gate, and can be used in combination with other leakage reduction techniques to achieve further improvement. We also propose a new standby leakage reduction methodology, leakage-aware body biasing, to overcome the shortcomings of a conventional Reverse Body Biasing (RBB) technique. The RBB technique has been used to reduce subthreshold leakage current. Therefore, this technique works well under subthreshold dominant region even though it has intrinsic structural drawbacks. However, such drawbacks cannot be overlooked anymore since gate leakage has become comparable to subthreshold leakage in nanometer-scale region. In addition, BTBT leakage also increases with technology scaling due to the higher doping concentration applied in each process technology. In these circumstances, the objective of leakage minimization is not a single leakage source but the overall leakage sources. The proposed leakage-aware body biasing technique, unlike conventional RBB technique, considers all major leakage sources to minimize the negative effects of existing body biasing approach. This can be achieved by intelligently applying body bias to appropriate CMOS network based on its status (on-/off-state) with the aid of a pin/transistor reordering technique

Manufacturability Aware Design.

The aim of this work is to provide solutions that optimize the tradeoffs among design, manufacturability, and cost of ownership posed by technology scaling and sub-wavelength lithography. These solutions may take the form of robust circuit designs, cost-effective resolution technologies, accurate modeling considering process variations, and design rules assessment. We first establish a framework for assessing the impact of process variation on circuit performance, product value and return on investment on alternative processes. Key features include comprehensive modeling and different handling on die-to-die and within-die variation, accurate models of correlations of variation, realistic and quantified projection to future process nodes, and performance sensitivity analysis to improved control of individual device parameter and variation sources. Then we describe a novel minimum cost of correction methodology which determines the level of correction of each layout feature such that the prescribed parametric yield is attained with minimum RET (Resolution Enhancement Technology) cost. This timing driven OPC (Optical Proximity Correction) insertion flow uses a mathematical programming based slack budgeting algorithm to determine OPC level for all polysilicon gate geometries. Designs adopting this methodology show up to 20% MEBES (Manufacturing Electron Beam Exposure System) data volume reduction and 39% OPC runtime improvement. When the systematic correction residual errors become unavoidable, we analyze their impact on a state-of-art microprocessor's speedpath skew. A platform is created for diagnosing and improving OPC quality on gates with specific functionality such as critical gates or matching transistors. Significant changes in full-chip timing analysis indicate the necessity of a post-OPC performance verification design flow. Finally, we quantify the performance, manufacturability and mask cost impact of globally applying several common restrictive design rules. Novel approaches such as locally adapting FDRs (flexible design rules) based on image parameters range, and DRC Plus (preferred design rule enforcement with 2D pattern matching) are also described.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/57676/2/jiey_1.pd