Design and Analysis of Improved Domino Logic with Noise Tolerance and High Performance

The demands of upcoming computing, as well as the challenges of nanometer-era of VLSI design necessitate new digital logic techniques and styles that are at the same time high performance, energy efficient and robust to noise and variation. Dynamic CMOS logic gates are broadly used to design high performance circuits due to their high speed. Conversely, the vital demerit of dynamic logic style is its high noise sensitivity. The main reason for this is the sub-threshold leakage current flowing through the pull down network. With continuous technology scaling, this problem is getting more and more severe. In this thesis, a new noise tolerant dynamic CMOS circuit technique is proposed. In the proposed work, we have enhanced the behavior of the domino CMOS logic. This technique also gets benefit in terms of delay and power. This thesis describes the new low power, noise tolerant and high speed domino logic technique and presents a comparison result of this logic with previously reported schemes. Simulation results prove that, in 180 nm CMOS technology when we used this logic style to realize wide fan-in logic gates, it could achieve maximum level of noise robustness as compared to its basic counterpart. In addition, the logic also works efficiently with sequential circuits. The feasibility of this new technique is demonstrated by means of a real hardware, we have built a custom test-chip in the UMC 180 nm process technology with an ALU core, using the proposed domino logic style for each design block. In this thesis, we have also described the design and implementation of this chip. In addition to this, we have also presented initial power and delay performance comparisons between the circuit level simulated ALU and test-chip implemented in the proposed domino logic style. Finally we conclude that, the thesis contributes a very efficient logic style for wide fan-in gates, which is not only noise robust but also energy efficient and high speed

Energy Efficient Design for Deep Sub-micron CMOS VLSIs

Over the past decade, low power, energy efficient VLSI design has been the focal point of active research and development. The rapid technology scaling, the growing integration capacity, and the mounting active and leakage power dissipation are contributing to the growing complexity of modern VLSI design. Careful power planning on all design levels is required. This dissertation tackles the low-power, low-energy challenges in deep sub-micron technologies on the architecture and circuit levels. Voltage scaling is one of the most efficient ways for reducing power and energy. For ultra-low voltage operation, a new circuit technique which allows bulk CMOS circuits to work in the sub-0. 5V supply territory is presented. The threshold voltage of the slow PMOS transistor is controlled dynamically to get a lower threshold voltage during the active mode. Due to the reduced threshold voltage, switching speed becomes faster while active leakage current is increased. A technique to dynamically manage active leakage current is presented. Energy reduction resulting from using the proposed structure is demonstrated through simulations of different circuits with different levels of complexity. As technology scales, the mounting leakage current and degraded noise immunity impact performance especially that of high performance dynamic circuits. Dual threshold technology shows a good potential for leakage reduction while meeting performance goals. A model for optimally selecting threshold voltages and transistor sizes in wide fan-in dynamic circuits is presented. On the circuit level, a novel circuit level technique which handles the trade-off between noise immunity and energy dissipation for wide fan-in dynamic circuits is presented. Energy efficiency of the proposed wide fan-in dynamic circuit is further enhanced through efficient low voltage operation. Another direct consequence of technology scaling is the growing impact of interconnect parasitics and process variations on performance. Traditionally, worst case process, parasitics, and environmental conditions are considered. Designing for worst case guarantees a fail-safe operation but requires a large delay and voltage margins. This large margin can be recovered if the design can adapt to the actual silicon conditions. Dynamic voltage scaling is considered a key enabler in reducing such margin. An on-chip process identifier to recover the margin required due to process variations is described. The proposed architecture adjusts supply voltage using a hybrid between the one-time voltage setting and the continuous monitoring modes of operation. The interconnect impact on delay is minimized through a novel adaptive voltage scaling architecture. The proposed system recovers the large delay and voltage margins required by conventional systems by closely tracking the actual critical path at anytime. By tracking the actual critical path, the proposed system is robust and more energy efficient compared to both the conventional open-loop and closed-loop systems

Performance Comparison of Static CMOS and Domino Logic Style in VLSI Design: A Review

Of late, there is a steep rise in the usage of handheld gadgets and high speed applications. VLSI designers often choose static CMOS logic style for low power applications. This logic style provides low power dissipation and is free from signal noise integrity issues. However, designs based on this logic style often are slow and cannot be used in high performance circuits. On the other hand designs based on Domino logic style yield high performance and occupy less area. Yet, they have more power dissipation compared to their static CMOS counterparts. As a practice, designers during circuit synthesis, mix more than one logic style judiciously to obtain the advantages of each logic style. Carefully designing a mixed static Domino CMOS circuit can tap the advantages of both static and Domino logic styles overcoming their own short comings

A novel deep submicron bulk planar sizing strategy for low energy subthreshold standard cell libraries

Engineering andPhysical Science ResearchCouncil (EPSRC) and Arm Ltd for providing funding in the form of grants and studentshipsThis work investigates bulk planar deep submicron semiconductor physics in an attempt to improve standard cell libraries aimed at operation in the subthreshold regime and in Ultra Wide Dynamic Voltage Scaling schemes. The current state of research in the field is examined, with particular emphasis on how subthreshold physical effects degrade robustness, variability and performance. How prevalent these physical effects are in a commercial 65nm library is then investigated by extensive modeling of a BSIM4.5 compact model. Three distinct sizing strategies emerge, cells of each strategy are laid out and post-layout parasitically extracted models simulated to determine the advantages/disadvantages of each. Full custom ring oscillators are designed and manufactured. Measured results reveal a close correlation with the simulated results, with frequency improvements of up to 2.75X/2.43X obs erved for RVT/LVT devices respectively. The experiment provides the first silicon evidence of the improvement capability of the Inverse Narrow Width Effect over a wide supply voltage range, as well as a mechanism of additional temperature stability in the subthreshold regime. A novel sizing strategy is proposed and pursued to determine whether it is able to produce a superior complex circuit design using a commercial digital synthesis flow. Two 128 bit AES cores are synthesized from the novel sizing strategy and compared against a third AES core synthesized from a state-of-the-art subthreshold standard cell library used by ARM. Results show improvements in energy-per-cycle of up to 27.3% and frequency improvements of up to 10.25X. The novel subthreshold sizing strategy proves superior over a temperature range of 0 °C to 85 °C with a nominal (20 °C) improvement in energy-per-cycle of 24% and frequency improvement of 8.65X. A comparison to prior art is then performed. Valid cases are presented where the proposed sizing strategy would be a candidate to produce superior subthreshold circuits

Critical design issues for gallium arsenide VLSI circuits.

The aim of this research was to design and evaluate various Gallium Arsenide circuit elements such as logic gates, adders and multipliers suitable for high speed VLSI circuits. The issues addressed are the logic gate design and optimisation, evaluation of various buffering schemes and the impact of the algorithm on adder and multiplier performance for digital signal processing applications. This has led to the development of a design approach to produce high speed and low power dissipation Gallium Arsenide VLSI circuits. This is achieved by : Evaluating the well established Direct Coupled Logic (DCFL) gates and proposing an alternative gate, namely the Source Follower DCFL (SDCFL), to improve the noise margin and speed. Suggesting various buffering schemes to maintain high speed in areas where the fanout loading is high (eg. clock drivers). Comparing various adder types in terms of delay-power and delay-area products to arrive at a suitable architecture for Gallium Arsenide implementation and to determine the influence of the algorithm and layout approach on circuit performance. To investigate this further, a multiplier was also designed to assess the performance at higher levels of integration. Applying a new layout approach, called the 'ring notation*, to the adder and multiplier circuits in order to improve their delay-area product. Finally, the critical factors influencing the performance of the circuits are reviewed and a number of suggestions are given to maintain reliable operation at high speed

SRAM Read-Assist Scheme for Low Power High Performance Applications

Semiconductor technology scaling resulted in a considerable reduction in the transistor cost and an astonishing enhancement in the performance of VLSI (very large scale integration) systems. These nanoscale technologies have facilitated integration of large SRAMs which are now very popular for both processors and system-on-chip (SOC) designs. The density of SRAM array had a quadratic increase with each generation of CMOS technology. However, these nanoscale technologies unveiled few significant challenges to the design of high performance and low power embedded memories. First, process variation has become more significant in these technologies which threaten reliability of sensing circuitry. In order to alleviate this problem, we need to have larger signal swings on the bitlines (BLs) which degrade speed as well as power dissipation. The second challenge is due to the variation in the cell current which will reduce the worst case cell current. Since this cell current is responsible for discharging BLs, this problem will translate to longer activation time for the wordlines (WLs). The longer the WL pulse width is, the more likely is the cell to be unstable. A long WL pulse width can also degrade noise margin. Furthermore, as a result of continuous increase in the size of SRAMs, the BL capacitance has increased significantly which will deteriorate speed as well as power dissipation. The aforementioned problems require additional techniques and treatment such as read-assist techniques to insure fast, low power and reliable read operation in nanoscaled SRAMs. In this research we address these concerns and propose a read-assist sense amplifier (SA) in 65nm CMOS technology that expedites the process of developing differential voltage to be sensed by sense amplifier while reducing voltage swing on the BLs which will result in increased sensing speed, lower power and shorter WL activation time. A complete comparison is made between the proposed scheme, conventional SA and a state of the art design which shows speed improvement and power reduction of 56.1% and 25.9%, respectively over the conventional scheme at the expense of negligible area overhead. Also, the proposed scheme enables us to reduce cell VDD for having the same sensing speed which results in considerable reduction in leakage power dissipation

Low Power Processor Architectures and Contemporary Techniques for Power Optimization – A Review

The technological evolution has increased the number of transistors for a given die area significantly and increased the switching speed from few MHz to GHz range. Such inversely proportional decline in size and boost in performance consequently demands shrinking of supply voltage and effective power dissipation in chips with millions of transistors. This has triggered substantial amount of research in power reduction techniques into almost every aspect of the chip and particularly the processor cores contained in the chip. This paper presents an overview of techniques for achieving the power efficiency mainly at the processor core level but also visits related domains such as buses and memories. There are various processor parameters and features such as supply voltage, clock frequency, cache and pipelining which can be optimized to reduce the power consumption of the processor. This paper discusses various ways in which these parameters can be optimized. Also, emerging power efficient processor architectures are overviewed and research activities are discussed which should help reader identify how these factors in a processor contribute to power consumption. Some of these concepts have been already established whereas others are still active research areas. © 2009 ACADEMY PUBLISHER

Reliability and security in low power circuits and systems

With the massive deployment of mobile devices in sensitive areas such as healthcare and defense, hardware reliability and security have become hot research topics in recent years. These topics, although different in definition, are usually correlated. This dissertation offers an in-depth treatment on enhancing the reliability and security of low power circuits and systems. The first part of the dissertation deals with the reliability of sub-threshold designs, which use supply voltage lower than the threshold voltage (Vth) of transistors to reduce power. The exponential relationship between delay and Vth significantly jeopardizes their reliability due to process variation induced timing violations. In order to address this problem, this dissertation proposes a novel selective body biasing scheme. In the first work, the selective body biasing problem is formulated as a linearly constrained statistical optimization model, and the adaptive filtering concept is borrowed from the signal processing community to develop an efficient solution. However, since the adaptive filtering algorithm lacks theoretical justification and guaranteed convergence rate, in the second work, a new approach based on semi-infinite programming with incremental hypercubic sampling is proposed, which demonstrates better solution quality with shorter runtime. The second work deals with the security of low power crypto-processors, equipped with Random Dynamic Voltage Scaling (RDVS), in the presence of Correlation Power Analysis (CPA) attacks. This dissertation firstly demonstrates that the resistance of RDVS to CPA can be undermined by lowering power supply voltage. Then, an alarm circuit is proposed to resist this attack. However, the alarm circuit will lead to potential denial-of-service due to noise-triggered false alarms. A non-zero sum game model is then formulated and the Nash Equilibria is analyzed --Abstract, page iii

Robust Design of Variation-Sensitive Digital Circuits

The nano-age has already begun, where typical feature dimensions are smaller than 100nm. The operating frequency is expected to increase up to 12 GHz, and a single chip will contain over 12 billion transistors in 2020, as given by the International Technology Roadmap for Semiconductors (ITRS) initiative. ITRS also predicts that the scaling of CMOS devices and process technology, as it is known today, will become much more difficult as the industry advances towards the 16nm technology node and further. This aggressive scaling of CMOS technology has pushed the devices to their physical limits. Design goals are governed by several factors other than power, performance and area such as process variations, radiation induced soft errors, and aging degradation mechanisms. These new design challenges have a strong impact on the parametric yield of nanometer digital circuits and also result in functional yield losses in variation-sensitive digital circuits such as Static Random Access Memory (SRAM) and flip-flops. Moreover, sub-threshold SRAM and flip-flops circuits, which are aggravated by the strong demand for lower power consumption, show larger sensitivity to these challenges which reduces their robustness and yield. Accordingly, it is not surprising that the ITRS considers variability and reliability as the most challenging obstacles for nanometer digital circuits robust design. Soft errors are considered one of the main reliability and robustness concerns in SRAM arrays in sub-100nm technologies due to low operating voltage, small node capacitance, and high packing density. The SRAM arrays soft errors immunity is also affected by process variations. We develop statistical design-oriented soft errors immunity variations models for super-threshold and sub-threshold SRAM cells accounting for die-to-die variations and within-die variations. This work provides new design insights and highlights the important design knobs that can be used to reduce the SRAM cells soft errors immunity variations. The developed models are scalable, bias dependent, and only require the knowledge of easily measurable parameters. This makes them useful in early design exploration, circuit optimization as well as technology prediction. The derived models are verified using Monte Carlo SPICE simulations, referring to an industrial hardware-calibrated 65nm CMOS technology. The demand for higher performance leads to very deep pipelining which means that hundreds of thousands of flip-flops are required to control the data flow under strict timing constraints. A violation of the timing constraints at a flip-flop can result in latching incorrect data causing the overall system to malfunction. In addition, the flip-flops power dissipation represents a considerable fraction of the total power dissipation. Sub-threshold flip-flops are considered the most energy efficient solution for low power applications in which, performance is of secondary importance. Accordingly, statistical gate sizing is conducted to different flip-flops topologies for timing yield improvement of super-threshold flip-flops and power yield improvement of sub-threshold flip-flops. Following that, a comparative analysis between these flip-flops topologies considering the required overhead for yield improvement is performed. This comparative analysis provides useful recommendations that help flip-flops designers on selecting the best flip-flops topology that satisfies their system specifications while taking the process variations impact and robustness requirements into account. Adaptive Body Bias (ABB) allows the tuning of the transistor threshold voltage, Vt, by controlling the transistor body voltage. A forward body bias reduces Vt, increasing the device speed at the expense of increased leakage power. Alternatively, a reverse body bias increases Vt, reducing the leakage power but slowing the device. Therefore, the impact of process variations is mitigated by speeding up slow and less leaky devices or slowing down devices that are fast and highly leaky. Practically, the implementation of the ABB is desirable to bias each device in a design independently, to mitigate within-die variations. However, supplying so many separate voltages inside a die results in a large area overhead. On the other hand, using the same body bias for all devices on the same die limits its capability to compensate for within-die variations. Thus, the granularity level of the ABB scheme is a trade-off between the within-die variations compensation capability and the associated area overhead. This work introduces new ABB circuits that exhibit lower area overhead by a factor of 143X than that of previous ABB circuits. In addition, these ABB circuits are resolution free since no digital-to-analog converters or analog-to-digital converters are required on their implementations. These ABB circuits are adopted to high performance critical paths, emulating a real microprocessor architecture, for process variations compensation and also adopted to SRAM arrays, for Negative Bias Temperature Instability (NBTI) aging and process variations compensation. The effectiveness of the new ABB circuits is verified by post layout simulation results and test chip measurements using triple-well 65nm CMOS technology. The highly capacitive nodes of wide fan-in dynamic circuits and SRAM bitlines limit the performance of these circuits. In addition, process variations mitigation by statistical gate sizing increases this capacitance further and fails in achieving the target yield improvement. We propose new negative capacitance circuits that reduce the overall parasitic capacitance of these highly capacitive nodes. These negative capacitance circuits are adopted to wide fan-in dynamic circuits for timing yield improvement up to 99.87% and to SRAM arrays for read access yield improvement up to 100%. The area and power overheads of these new negative capacitance circuits are amortized over the large die area of the microprocessor and the SRAM array. The effectiveness of the new negative capacitance circuits is verified by post layout simulation results and test chip measurements using 65nm CMOS technology