Wireless Applications of Radio Frequency Micro-Electro-Mechanical Systems

With mass proliferation of wireless communication technologies, there is a continuous demand on fast data transmission rate and efficient use of frequency spectrum. As a result, reconfigurable systems are of significant importance and research is being conducted in numerous universities. The purpose of this research is to develop novel RF MEMS based reconfigurable wireless systems. By utilizing the RF MEMS switches as a basic building block, this thesis focus on developing a unique design technique for the design and development of RF MEMS delay line phase shifter, frequency reconfigurable antennas and pattern reconfigurable antennas. This thesis work is divided into four parts: 1. Investigation and development of nano-electro-mechanical systems (NEMS) based 3-bit phase shifter. Analyzing the slow wave structure to further reduce the size of delay line phase shifter. 2. Development of frequency reconfigurable antennas to compete with broadband and multi-band antennas. Two novel MEMS-loaded frequency reconfigurable antennas were designed with spectrum switchable between WPAN band (57 to 66 GHz) and the whole E-band (71 to 86 GHz). 3. Investigation of microstrip-to-coplanar striplines (CPS) transition balun used for antennas to explain the inherent phase delay of this type of structure. Based on the discovery, a pattern reconfigurable quasi-Yagi antenna was designed. The antenna exhibits excellent RF performance, compact size and switchable end-fire radiation pattern with the goal to replacing existing phased array antennas. It has the full functionality of a multi-antenna phased array plus phase shifting network while its size is same as a fixed single Yagi antenna. 4. Development of full seven masks all metal fabrication process of the RF MEMS integrated reconfigurable antennas. The fabrication processes are optimized based on Australian National Fabrication Facility (ANFF) New South Wales node’s equipment

Low cost fabrication processing for microwave and millimetre-wave passive components

Microwave and millimetre-wave technology has enabled many commercial applications to play a key role in the development of wireless communication. When dissipative attenuation is a critical factor, metal-pipe waveguides are essential in the development of microwave and millimetre-wave systems. However, their cost and weight may represent a limitation for their application. In the first part of this work two 3D printing technologies and electroless plating were employed to fabricate metal pipe rectangular waveguides in X and W-band. The performance for the fabricated waveguides was comparable to the one of commercially available equivalents, showing good impedance matching and low attenuation losses. Using these technologies, a high-performance inductive iris filter in W-band and a dielectric flap phase shifter in X-band were fabricated. Eventually the design and fabrication of a phased antenna array is reported. For microwave and millimetre-wave applications, system-on-substrate technology can be considered a very valuable alternative, where bulky coax and waveguide interconnects are replaced by low-loss transmission lines embedded into a multilayer substrate, which can include a wide range of components and subsystems. In the second part of this work the integration of RF MEMS with LTCC fabrication process is investigated. Three approaches to the manufacture of suspended structures were considered, based on laser micromachining, laser bending of aluminium foil and hybrid thick/thin film technology. Although the fabrication process posed many challenges, resulting in very poor yield, two of the solution investigated showed potential for the fabrication of low-cost RF MEMS fully integrated in LTCC technology. With the experience gained with laser machining, the rapid prototyping of high aspect ratio beams for silicon MEMS was also investigated. In the third part of this work, a statistical study based on the Taguchi design of experiment and analysis of variance was undertaken. The results show a performance comparable with standard cleanroom processing, but at a fraction of the processing costs and greater design flexibility, due to the lack of need for masks.Open Acces

MEMS-Based Millimeter Front-end for Automotive Radar Applications

Automotive front-end radars are key components in modern vehicles. They are used in automatic cruise control (ACC) for advanced drive-assistance and security functions, including collision-avoidance systems. Automotive safety is being studied intensively both in industry and academia. One of the most serious limitations of high performance radar are beam-forming network systems, due to the complexity and bulkiness arising from the additional circuitry and hardware needed to implement multiple functionalities into the systems. This limitation can, however, be minimized and made cost-effective by capitalizing on the numerous advantages of RF MEMS and WG technologies. To resolve this issue, the present study covers the characterization of SPST and SPNT RF-MEMS switches at 77 GHz, the investigation and fabrication of a Rotman lens at 77 GHz, and the development of the ground work for a 3D monolithically integrated BFN on a single silicon substrate

Remotely interrogated MEMS pressure sensor

This thesis considers the design and implementation of passive wireless microwave readable pressure sensors on a single chip. Two novel-all passive devices are considered for wireless pressure operation. The first device consists of a tuned circuit operating at 10 GHz fabricated on SiO2 membrane, supported on a silicon wafer. A pressure difference across the membrane causes it to deflect so that a passive resonant circuit detunes. The circuit is remotely interrogated to read off the sensor data. The chip area is 20 mm2 and the membrane area is 2mm2 with thickness of 4 µm. Two on chip passive resonant circuits were investigated: a meandered dipole and a zigzag antenna. Both have a physical length of 4.25 mm. the sensors show a shift in their resonant frequency in response to changing pressure of 10.28-10.27 GHz for the meandered dipole, and 9.61-9.58 GHz for the zigzag antenna. The sensitivities of the meandered dipole and zigzag sensors are 12.5 kHz and 16 kHz mbar, respectively. The second device is a pressure sensor on CMOS chip. The sensing element is capacitor array covering an area of 2 mm2 on a membrane. This sensor is coupled with a dipole antenna operating at 8.77 GHz. The post processing of the CMOS chip is carried out only in three steps, and the sensor on its own shows a sensitivity of 0.47fF/mbar and wireless sensitivity of 27 kHz/mbar. The MIM capacitors on membrane can be used to detune the resonant frequency of an antenna

A Micromachined Millimeter-Wave Radar Technology for Indoor Navigation

A compact, light-weight, low-power MMW radar system operating at 240 GHz is introduced to enable autonomous navigation of micro robotic platforms in complex environments. The short wavelength at the operating frequency band (1.25mm @ 240 GHz) enables implementation of the radar front-end components on a silicon wafer stack using micromachining techniques. This work presents the design, fabrication technology, and measurement methodology of components for the micromachined MMW radar and the phenomenology of such radars in indoor environments. Novel passive structures are developed to realize a fully micromachined radar front-end. Low loss cavity-backed CPW (CBCPW) lines (0.12 dB/mm @ 240 GHz), broadband transitions from the CBCPW line to rectangular waveguide (IL13 dB; BW: 39%), MMIC chip integration transitions, and waveguide directional couplers are designed to fully integrate active and passive components of the radar. Also a membrane-supported miniaturized-element FSS image-reject filter (IL25 dB in the stopband) is developed for MMW radar applications. The structures are designed compatible with micromachining technology and optimized for minimum insertion loss. The designed components are then realized over a two layer stack of silicon wafers. Multi-step structures are realized on one of the wafers and the membrane-supported features are implemented on the other wafer. A novel multistep DRIE technique is utilized to enhance the profile quality of the fabricated structures. Measurement techniques are developed to enable accurate and repeatable characterization of the on-wafer components at MMW and higher frequency bands. A novel waveguide probe S-parameter measurement technique is introduced for non-contact characterization of the multi-port components using a two-port network analyzer. To examine the utilization of the proposed 240 GHz radar for collision avoidance and building interior mapping applications, the interaction of electromagnetic waves with objects in the indoor environments is investigated. An instrumentation radar is utilized to collect backscatter data from corridors in an indoor setting. The collected data is used to form radar images for obstacle detection. The radar images are co-registered in a global coordinate matrix to form a complete map of the interior layout. Image processing techniques are used to enhance the final layout map.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/107273/1/moallem_1.pd

Above-IC RF MEMS devices for communication applications

Wireless communications are showing an explosive growth in emerging consumer and military applications of radiofrequency (RF), microwave, and millimeter-wave circuits and systems. Applications include wireless personal connectivity (Bluetooth), wireless local area networks (WLAN), mobile communication systems (GSM, GPRS, UMTS, CDMA), satellite communications and automotive electronics. Future cell phones and ground communication systems as well as communication satellites will require more and more sophisticated technologies. The increasing demand for size and weight reduction, cost savings, low power consumption, increased frequency and higher functionality and reconfigurability as part of multiband and multistandard operation is necessitating the use of highly integrated RF front-end circuits. Chip scaling has made a major contribution to this goal, but today a situation has been reached where the presence of numerous off-chip passive RF components imposes a critical bottleneck to further integration and miniaturization of wireless transceivers. Microelectromechanical systems (MEMS) technology is a rapidly emerging enabling technology that is intended to replace the discrete passives by their integrated counterparts. In this thesis, an original metal surface micromachining process, which is compatible with CMOS post-processing, for above-IC integration of RF MEMS tunable capacitors and suspended inductors is presented. A detailed study on SF6 inductively coupled plasma (ICP) releasing has been performed in order to ascertain the optimal process parameters. This study has emphasized the fact that temperature plays an important role in this process by limiting silicon dioxide etching. Moreover, the optimized recipe has been found to be independent of the sacrificial layer used (amorphous or polycrystalline silicon) and its thickness. Using this recipe, 15.6 µm/min Si underetch rate with high Si: SiO2 selectivity (> 20000: 1) has been obtained. Single-air-gap and double-air-gap parallel-plate MEMS tunable capacitors have been designed, fabricated and characterized in the pF range, from 1 MHz to 13.5 GHz. It has been shown that an optimized design of the suspended membrane and direct symmetrical current feed at both ports can significantly improve the quality factor and increase the self-resonant frequency, pushing it to 12 GHz and beyond. The maximum capacitance tuning range obtained for a single-air-gap capacitor is 29% for a bias voltage of 20 V. The maximum capacitance tuning range obtained for a double-air-gap capacitor is 207% for a bias voltage of 70 V. The post-processing of X-FAB BiCMOS wafers has been successfully demonstrated to fabricate monolithically integrated VCOs with above-IC MEMS LC tank. Comparing a suspended inductor and the X-FAB inductor with the same design, it has been shown that increasing the thickness of the spiral from 2.3 to 4 µm and having the spiral suspended 3 µm above the passivation layers lead to an improvement factor of 2 for the peak quality factor and a shift of the self-resonant frequency beyond 15 GHz. No significant variation on bipolar and MOS transistors characteristics due to the post-processing has been observed and we conclude that the variation due to post-processing is in the same range as the wafer-to-wafer variation. Based on our metal surface micromachining process, coplanar waveguide (CPW) MEMS shunt capacitive switches and variable true-time delay lines (V-TTDLs) have been designed, fabricated and characterized in the 1 - 20 GHz range. A novel MEMS device architecture: the SG-MOSFET, which combines a solid-state MOS transistor and a metal suspended gate has been proposed as DC current switch. The corresponding fabrication process using polysilicon as a sacrificial layer has been developed to release metal gate suspended over gate oxide by SF6 plasma. Very abrupt current switches have been demonstrated with subthreshold slope better than 10 mV/decade (better than the theoretical solid-state bulk or SOI MOSFET limit of 60 mV/decade) and ultra-low gate leakage (less than 0.001 pA/µm2) due to the air-gap

A COMPREHENSIVE OVERVIEW OF RECENT DEVELOPMENTS IN RF-MEMS TECHNOLOGY-BASED HIGH-PERFORMANCE PASSIVE COMPONENTS FOR APPLICATIONS IN THE 5G AND FUTURE TELECOMMUNICATIONS SCENARIOS

The goal of this work is to provide an overview about the current development of radio-frequency microelectromechanical systems technology, with special attention towards those passive components bearing significant application potential in the currently developing 5G paradigm. Due to the required capabilities of such communication standard in terms of high data rates, extended allocated spectrum, use of massive MIMO (Multiple-Input-Multiple-Output) systems, beam steering and beam forming, the focus will be on devices like switches, phase shifters, attenuators, filters, and their packaging/integration. For each of the previous topics, several valuable contributions appeared in the last decade, underlining the improvements produced in the state of the art and the chance for RF-MEMS technology to play a prominent role in the actual implementation of the 5G infrastructure

RF MEMS technology for millimeter-wave radar sensors

The dissertation discusses RF MEMS technology for millimeter-wave radar sensors. RF MEMS, which stands for radio frequency micro-electromechanical system, and radar sensor fundamentals are briefly introduced. Of particular interest are: Firstly, a self-aligned fabrication process for capacitive fixed-fixed beam RF MEMS components is disclosed. It enables scaling of the critical dimensions and reduces the number of processing steps by 40% as compared with a conventional RF MEMS fabrication process. Scaling of the critical dimensions of RF MEMS components offers the potential of submicrosecond T/R switching times. RF MEMS varactors with beam lengths of 30 μm are demonstrated using the self-aligned fabrication process, and the performance of a 4 by 4 RF MEMS varactor bank is discussed as well. At 20 GHz, the measured capacitance values range between 180.5 fF and 199.2 fF. The measured capacitance ratio is 1.15, when a driving voltage of 35 V is applied, and the measured loaded Q factor ranges between 14.5 and 10.8. The measured cold-switched power handling is 200 mW. The simulated switching time is 354.6 ns. Secondly, an analog RF MEMS slotline TTD phase shifter is disclosed, for use in conjunction with ultra wideband (UWB) tapered slot antennas, such as the Vivaldi aerial and the double exponentially tapered slot antenna. It is designed for transistor to transistor logic (TTL) bias voltage levels and exhibits a measured phase shift of 28.2°/dB (7.8 ps/dB) and 59.2°/cm at 10 GHz, maintaining a 75 Ω; differential impedance match (S11dd ≤ -15.8 dB). The input third-order intercept point (IIP3) is 5 dBm at 10 GHz for a Δf of 50 kHz, measured in a 100 Ω differential transmission line system.Ph.D.Electrical EngineeringUniversity of Michiganhttp://deepblue.lib.umich.edu/bitstream/2027.42/61348/1/vcaeken.pd

Integrated MEMS-Based Phase Shifters

Multilayer microwave circuit processing technology is essential in developing more compact radio frequency (RF) electronically scanned arrays (ESAs) for next generation radar systems. ESAs are typically realized using the hybrid connection of four discrete components: RF manifold, phase shifters or Butler matrices, antennas and T/R modules. The hybrid connection of these components increases the system size, packaging cost and introduces parasitic effects that lead to higher losses. In order to eliminate these drawbacks, there is a need to integrate these components on the same substrate, forming a monolithic phased array. RF MEMS technology enables the monolithic integration of the ESA components into one highly integrated multifunctional module, thereby enhancing ESA designs by significantly reducing size, fabrication cost and interconnection losses. A novel capacitive dual-warped beam shunt MEMS switch is presented that utilizes warped beams to enhance its RF performance. This switch exhibits an off-to-on capacitive ratio of almost 170, isolation better than 40dB, switching speeds as low as 6μs without the need for thin dielectrics or high dielectric constant materials. These MEMS switches are implemented into single pole three throw (SP3T) and single pole four throw (SP4T) configurations. A novel 3-bit finite ground coplanar waveguide switched delay line MEMS phase shifter is developed with four cascaded SP3T dual-warped beam capacitive switches to achieve low-loss performance and simplify ESA design. The fabricated prototype unit exhibits an insertion loss of 2.5∓0.2dB with a phase error of ∓6°. Moreover, a compact 4 x 4 Butler matrix switchable with the use of a MEMS SP4T switch is investigated as an alternative passive beamforming method. The overall beam-switching network is monolithically integrated within a real-estate area of 0.49cm2. This technique provides a unique approach to fabricate the entire beamforming network monolithically. An 8-mask fabrication process is developed that monolithically integrates the MEMS phase shifter and RF combining network on one substrate. The wafer-scale integrated ESA prototype unit has an area of 2.2cm2. It serves as the basic building block to construct larger scanning array modules and introduces a new level of functionality previously achieved only by the use of larger, heavier and expensive system

Photoresist-based polymer resonator antennas (PRAs) with lithographic fabrication and dielectric resonator antennas (DRAs) with improved performance

The demand for higher bit rates to support new services and more users is pushing wireless systems to millimetre-wave frequency bands with more available bandwidth and less interference. However at these frequencies, antenna dimensions are dramatically reduced complicating the fabrication process. Conductor loss is also significant, reducing the efficiency and gain of fabricated metallic antennas. To better utilize millimetre-wave frequencies for wireless applications, antennas with simple fabrication, higher efficiency, and larger impedance bandwidth are required. Dielectric Resonator Antennas (DRAs) offer many appealing features such as large impedance bandwidth and high radiation efficiency due to the lack of conductor and surface wave losses. DRAs also provide design flexibility and versatility. Different radiation patterns can be achieved by different geometries or resonance modes, wideband or compact antennas can be provided by different dielectric constants, and DRAs can be excited by a wide variety of feeding structures. Nevertheless, compared to their metallic counterparts, fabrication of DRAs is challenging since they have traditionally been made of high permittivity ceramics, which are naturally hard and extremely difficult to machine and cannot be easily made in an automatic way. The fabrication of these three dimensional structures is even more difficult at millimetre-wave frequencies where the size of the antenna is reduced to the millimetre or sub-millimetre range, and tolerances to common manufacturing imperfections are even smaller. These fabrication problems restrict the wide use of DRAs, especially for high volume commercial applications. A new approach to utilize the superior features of DRAs for commercial applications, introduced in this thesis, is to exploit polymer-based resonator antennas (PRAs), which dramatically simplifies fabrication due to the natural softness and results in a wide impedance bandwidth due to the low permittivity of polymers. Numerous polymer types with exceptional characteristics can be used to fulfill the requirements of particular applications or achieve extraordinary benefits. For instance, in this thesis photoresist polymers facilitate the fabrication of PRAs using lithographic processes. Another advantage derived from this approach is the capability of mixing polymers with a wide variety of fillers to produce composite materials with improved or extraordinary characteristics. The key contributions of this thesis are in introducing SU-8 photoresist as a radiating material, developing three lithographic methods to fabricate photoresist-ceramic composite structures, introducing a simple and non-destructive measurement method to define electrical properties of the photoresist composites, and demonstrating these structures as improved antenna components. It is shown that pure SU-8 resonators can be highly efficient antennas with wideband characteristics. To achieve more advantages for RF applications, the microwave properties of photoresists are modified by producing ceramic composite materials. X-ray lithography fabrication is optimized and as a result one direct and two indirect methods are proposed to pattern ultra thick (up to 2.3 mm) structures and complicated shapes with an aspect ratio as high as 36:1. To measure the permittivity and loss tangent of the resulting materials, a modified ring resonator technique in one-layer and two-layer microstrip configurations is developed. This method eliminates the requirement to metalize the samples and enables characterization of permittivity and dielectric loss in a wide frequency range from 2 to 40 GHz. Various composite PRAs with new designs (e.g. frame-based and strip-fed structures) are lithographically fabricated, tested, and discussed. The prototype antennas offer -10 dB bandwidths as large as 50% and gain in the range of 5 dBi