Microwave and Millimeter-wave Concurrent Multiband Low-Noise Amplifiers and Receiver Front-end in SiGe BiCMOS Technology

A fully integrated SiGe BiCMOS concurrent multiband receiver front-end and its building blocks including multiband low-noise amplifiers (LNAs), single-to-differential amplifiers and mixer are presented for various Ku-/K-/Ka-band applications. The proposed concurrent multiband receiver building blocks and receiver front-end achieve the best stopband rejection performances as compared to the existing multiband LNAs and receivers. First, a novel feedback tri-band load composed of two inductor feedback notch filters is proposed to overcome the low Q-factor of integrated passive inductors, and hence it provides superior stopband rejection ratio (SRR). A new 13.5/24/35-GHz concurrent tri-band LNA implementing the feedback tri-band load is presented. The developed tri-band LNA is the first concurrent tri-band LNA operating up to millimeter-wave region. By expanding the operating principle of the feedback tri-band load, a 21.5/36.5-GHz concurrent dual-band LNA with an inductor feedback dual-band load and another 23/36-GHz concurrent dual-band LNA with a new transformer feedback dual-band load are also presented. The latter provides more degrees of freedom for the creation of the stopband and passbands as compared to the former. A 22/36-GHz concurrent dual-band single-to-differential LNA employing a novel single-to-differential transformer feedback dual-band load is presented. The developed LNA is the first true concurrent dual-band single-to-differential amplifier. A novel 24.5/36.5 GHz concurrent dual-band merged single-to-differential LNA and mixer implementing the proposed single-to-differential transformer feedback dual-band load is also presented. With a 21-GHz LO signal, the down-converted dual IF bands are located at 3.5/15.5 GHz for two passband signals at 24.5/36.5 GHz, respectively. The proposed merged LNA and mixer is the first fully integrated concurrent dual-band mixer operating up to millimeter-wave frequencies without using any switching mechanism. Finally, a 24.5/36.5-GHz concurrent dual-band receiver front-end is proposed. It consists of the developed concurrent dual-band LNA using the single-to-single transformer feedback dual-band load and the developed concurrent dual-band merged LNA and mixer employing the single-to-differential transformer feedback dual-band load. The developed concurrent dual-band receiver front-end achieves the highest gain and the best NF performances with the largest SRRs, while operating at highest frequencies up to millimeter-wave region, among the concurrent dual-band receivers reported to date

Microwave and Millimeter-wave Concurrent Multiband Low-Noise Amplifiers and Receiver Front-end in SiGe BiCMOS Technology

A fully integrated SiGe BiCMOS concurrent multiband receiver front-end and its building blocks including multiband low-noise amplifiers (LNAs), single-to-differential amplifiers and mixer are presented for various Ku-/K-/Ka-band applications. The proposed concurrent multiband receiver building blocks and receiver front-end achieve the best stopband rejection performances as compared to the existing multiband LNAs and receivers. First, a novel feedback tri-band load composed of two inductor feedback notch filters is proposed to overcome the low Q-factor of integrated passive inductors, and hence it provides superior stopband rejection ratio (SRR). A new 13.5/24/35-GHz concurrent tri-band LNA implementing the feedback tri-band load is presented. The developed tri-band LNA is the first concurrent tri-band LNA operating up to millimeter-wave region. By expanding the operating principle of the feedback tri-band load, a 21.5/36.5-GHz concurrent dual-band LNA with an inductor feedback dual-band load and another 23/36-GHz concurrent dual-band LNA with a new transformer feedback dual-band load are also presented. The latter provides more degrees of freedom for the creation of the stopband and passbands as compared to the former. A 22/36-GHz concurrent dual-band single-to-differential LNA employing a novel single-to-differential transformer feedback dual-band load is presented. The developed LNA is the first true concurrent dual-band single-to-differential amplifier. A novel 24.5/36.5 GHz concurrent dual-band merged single-to-differential LNA and mixer implementing the proposed single-to-differential transformer feedback dual-band load is also presented. With a 21-GHz LO signal, the down-converted dual IF bands are located at 3.5/15.5 GHz for two passband signals at 24.5/36.5 GHz, respectively. The proposed merged LNA and mixer is the first fully integrated concurrent dual-band mixer operating up to millimeter-wave frequencies without using any switching mechanism. Finally, a 24.5/36.5-GHz concurrent dual-band receiver front-end is proposed. It consists of the developed concurrent dual-band LNA using the single-to-single transformer feedback dual-band load and the developed concurrent dual-band merged LNA and mixer employing the single-to-differential transformer feedback dual-band load. The developed concurrent dual-band receiver front-end achieves the highest gain and the best NF performances with the largest SRRs, while operating at highest frequencies up to millimeter-wave region, among the concurrent dual-band receivers reported to date

Analysis of Impact of Transformer Coupled Input Matching on Concurrent Dual-Band Low Noise Amplifier

Emerging advancements in telecommunication system need robust radio devices which can capable of working multiple frequency bands seamlessly. In any Radio Frequency (RF) receiver architecture, Low Noise Amplifier (LNA) is the mandatory front-end part in which takes place in between antenna and mixer. To support multiple frequency bands with single hardware, concurrent LNA is the more preferred topologies among others. As LNA is the very front end level of receiver, Input matching, Noise Figure (NF) and gain are the major performance parameters to be concerned. In this work, the impact of transformer coupled input matching on concurrent dual-band LNA is analyzed and verified. A concurrent LNA with concurrent matching without transformer coupling is used for comparison. A transformer coupled input matching is proposed for tunable concurrent dual-band LNA. All the circuits are implemented in UMC 180nm CMOS technology, and simulated using Cadence SpectreRF simulation tool

Comparison between single band and concurrent multi-band linear power amplifiers

Currently the multiple wireless data transmission technologies have been commercially implemented, such as long-term evolution (LTE), Wi-Fi, and Bluetooth. There is a keen requirement to combine the power amplifiers for those technologies into a single one which can amplifies concurrent multi-band signals. On the physically layer, there are two popular architectures, namely parallel single-band power amplifiers and concurrent multi-band power amplifiers. In this thesis, quantitative comparison between parallel single-band power amplifiers and concurrent multi-band power amplifiers has been presented theoretically in the aspects of area, drain efficiency and linearity. Methods of calculating drain efficiency is derived for concurrent multi-band PAs for different frequency ratios. Linearity issues of concurrent multi-band power amplifiers have been addressed based on the concepts of gain compression and intermodulation distortion. Final, area consumption has been compared for both architectures with current technologies. Results of the drain efficiency map versus 2-D frequency ratio are plotted in figures for class A, B and C. Linearity degradation of concurrent multi-band has been derived mathematically

Tunable, Concurrent Multiband, Single Chain Radio Architecture for Low Energy 5G-RANs

This invited paper considers a key next step in the design of radio architectures aimed at supporting low energy consumption in 5G heterogeneous radio access networks. State-of-the-art mobile radios usually require one RF transceiver per standard, each working separately at any given time. Software defined radios, while spanning a wide range of standards and frequency bands, also work separately at any specific time. In 5G radio access networks, where continuous, multiband connectivity is envisaged, this conventional radio architecture results in high network power consumption. In this paper, we propose the novel concept of a concurrent multiband frequency-agile radio (CM-FARAD) architecture, which simultaneously supports multiple standards and frequency bands using a single, tunable transceiver. We discuss the subsystem radio design approaches for enabling the CM-FARAD architecture, including antennas, power amplifiers, low noise amplifiers and analogue to digital converters. A working prototype of a dual-band CM-FARAD test-bed is also presented together with measured salient performance characteristics

Millimeter-Wave Concurrent Dual-Band Sige Bicmos Rfic Phased-Array Transmitter and Components

A concurrent dual-band phased-array transmitter (TX) and its constituent components are studied in this dissertation. The TX and components are designed for the unlicensed bands, 22–29 and 57–64 GHz, using a 0.18-μm BiCMOS technology. Various studies have been done to design the components, which are suitable for the concurrent dual-band phased-array TX. The designed and developed components in this study are an attenuator, switch, phase shifter, power amplifier and power divider. Attenuators play a key role in tailoring main beam and side-lobe patterns in a phased-array TX. To perform the function in the concurrent dual-band phased-array TX, a 22–29 and 57–64 GHz concurrent dual-band attenuator with low phase variations is designed. Signal detection paths are employed at the output of the phased-array TX to monitor the phase and amplitude deviations/errors, which are larger in the high-frequency design. The detected information enables the TX to have an accurate beam tailoring and steering. A 10–67 GHz wide-band attenuator, covering the dual bands, is designed to manipulate the amplitude of the detected signal. New design techniques for an attenuator with a wide attenuation range and improved flatness are proposed. Also, a topology of dual-function circuit, attenuation and switching, is proposed. The switching turns on and off the detection path to minimize the leakages while the path is not used. Switches are used to minimize the number of components in the phased-array transceiver. With the switches, some of the bi-directional components in the transceiver such as an attenuator, phase shifter, filter, and antenna can be shared by the TX and receiver (RX) parts. In this dissertation, a high-isolation switch with a band-pass filtering response is proposed. The band-pass filtering response suppresses the undesired harmonics and intermodulation products of the TX. Phase shifters are used in phased-array TXs to steer the direction of the beam. A 24-GHz phase shifter with low insertion loss variation is designed using a transistor-body-floating technique for our phased-array TX. The low insertion loss variation minimizes the interference in the amplitude control operation (by attenuator or variable gain amplifier) in phased-array systems. BJTs in a BiCMOS process are characterized across dc to 67 GHz. A novel characterization technique, using on-wafer calibration and EM-based de-embedding both, is proposed and its accuracy at high frequencies is verified. The characterized BJT is used in designing the amplifiers in the phased-array TX. A concurrent dual-band power amplifier (PA) centered at 24 and 60 GHz is proposed and designed for the dual-band phased-array TX. Since the PA is operating in the dual frequency bands simultaneously, significant linearity issues occur. To resolve the problems, a study to find significant intermodulation (IM) products, which increase the third intermodulation (IM3) products most, has been done. Also, an advanced simulation and measurement methodology using three fundamental tones is proposed. An 8-way power divider with dual-band frequency response of 22–29 and 57–64 GHz is designed as a constituent component of the phased-array TX

Amplifier Architectures for Wireless Communication Systems

Ever-increasing demand in modern wireless communication systems leads researchers to focus on design challenges on one of the main components of RF transmitters and receivers, namely amplifiers. On the transmitter side, enhanced efficiency and broader bandwidth over single and multiple bands on power amplifiers will help to have superior performance in communication systems. On the other hand, for the receiver side, having low noise and high gain will be necessary to ensure good quality transmission over such systems. In light of these considerations, a unique approach in design methodologies are studied with low noise amplifiers (LNAs) for RF receivers and the Doherty technique is analyzed for efficiency enhancement for power amplifiers (PA) on the transmitters. This work can be outlined in two parts. In the first part, Low Noise RF amplifier designs with Bipolar Junction Transistor (BJT) are studied to achieve better performing LNAs for receivers. The aim is to obtain a low noise figure while optimizing the bandwidth and achieving a maximum available gain. There are two designs that are operating at different center frequencies and utilizing different transistors. The first design is a wideband low-noise amplifier operating at 2 GHz with a high power BJT. The proposed design uses only distributed elements to realize the input and output matching networks. Additionally, a passive DC bias network is used instead of an active DC bias network to avoid possible complications due to the lumped elements parasitic effects. The matching networks are designed based on the reflection coefficients that are derived based on the transistor’s available regions. The second design is a low voltage standing wave ratio (VSWR) amplifier with a low noise figure operating at 3 GHz. This design is following the same method as in the first design. Both these amplifiers are designed to operate in broadband applications and can be good candidates for base stations. The second part of this work focuses on the transmitter side of communication systems. For this part, Doherty Power Amplifier (DPA) is analyzed as an efficiency enhancement technique for PAs. A modified architecture is proposed to have wider bandwidth and higher efficiency. In the proposed design, the quarter-wave impedance inverter was eliminated. The input and the output of the main and peak amplifiers are matched to the load directly. Additionally, the input and output matching networks are realized only using distributed elements. The selected transistor for this design is a 10 W Gallium Nitride (GaN). The fabricated amplifier operates at the center frequency of 2 GHz and provides 40% fractional bandwidth, 54% of maximum power-added efficiency, and 12.5 dB or better small-signal gain. The design is showing promising results to be a good candidate for better-performing transmitters over the L- and S- band

A survey on RF and microwave doherty power amplifier for mobile handset applications

This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications, will be discussed.Agencia Estatal de Investigación | Ref. TEC2017-88242-C3-2-RFundação para a Ciência e a Tecnologia | Ref. UIDP/50008/201