CMOS design of chaotic oscillators using state variables: a monolithic Chua's circuit

This paper presents design considerations for monolithic implementation of piecewise-linear (PWL) dynamic systems in CMOS technology. Starting from a review of available CMOS circuit primitives and their respective merits and drawbacks, the paper proposes a synthesis approach for PWL dynamic systems, based on state-variable methods, and identifies the associated analog operators. The GmC approach, combining quasi-linear VCCS's, PWL VCCS's, and capacitors is then explored regarding the implementation of these operators. CMOS basic building blocks for the realization of the quasi-linear VCCS's and PWL VCCS's are presented and applied to design a Chua's circuit IC. The influence of GmC parasitics on the performance of dynamic PWL systems is illustrated through this example. Measured chaotic attractors from a Chua's circuit prototype are given. The prototype has been fabricated in a 2.4- mu m double-poly n-well CMOS technology, and occupies 0.35 mm/sup 2/, with a power consumption of 1.6 mW for a +or-2.5-V symmetric supply. Measurements show bifurcation toward a double-scroll Chua's attractor by changing a bias current

Design, Modeling and Analysis of Non-classical Field Effect Transistors

Transistor scaling following per Moore\u27s Law slows down its pace when entering into nanometer regime where short channel effects (SCEs), including threshold voltage fluctuation, increased leakage current and mobility degradation, become pronounced in the traditional planar silicon MOSFET. In addition, as the demand of diversified functionalities rises, conventional silicon technologies cannot satisfy all non-digital applications requirements because of restrictions that stem from the fundamental material properties. Therefore, novel device materials and structures are desirable to fuel further evolution of semiconductor technologies. In this dissertation, I have proposed innovative device structures and addressed design considerations of those non-classical field effect transistors for digital, analog/RF and power applications with projected benefits. Considering device process difficulties and the dramatic fabrication cost, application-oriented device design and optimization are performed through device physics analysis and TCAD modeling methodology to develop design guidelines utilizing transistor\u27s improved characteristics toward application-specific circuit performance enhancement. Results support proposed device design methodologies that will allow development of novel transistors capable of overcoming limitation of planar nanoscale MOSFETs. In this work, both silicon and III-V compound devices are designed, optimized and characterized for digital and non-digital applications through calibrated 2-D and 3-D TCAD simulation. For digital functionalities, silicon and InGaAs MOSFETs have been investigated. Optimized 3-D silicon-on-insulator (SOI) and body-on-insulator (BOI) FinFETs are simulated to demonstrate their impact on the performance of volatile memory SRAM module with consideration of self-heating effects. Comprehensive simulation results suggest that the current drivability degradation due to increased device temperature is modest for both devices and corresponding digital circuits. However, SOI FinFET is recommended for the design of low voltage operation digital modules because of its faster AC response and better SCEs management than the BOI structure. The FinFET concept is also applied to the non-volatile memory cell at 22 nm technology node for low voltage operation with suppressed SCEs. In addition to the silicon technology, our TCAD estimation based on upper projections show that the InGaAs FinFET, with superior mobility and improved interface conditions, achieve tremendous drive current boost and aggressively suppressed SCEs and thereby a strong contender for low-power high-performance applications over the silicon counterpart. For non-digital functionalities, multi-fin FETs and GaN HEMT have been studied. Mixed-mode simulations along with developed optimization guidelines establish the realistic application potential of underlap design of silicon multi-Fin FETs for analog/RF operation. The device with underlap design shows compromised current drivability but improve analog intrinsic gain and high frequency performance. To investigate the potential of the novel N-polar GaN material, for the first time, I have provided calibrated TCAD modeling of E-mode N-polar GaN single-channel HEMT. In this work, I have also proposed a novel E-mode dual-channel hybrid MIS-HEMT showing greatly enhanced current carrying capability. The impact of GaN layer scaling has been investigated through extensive TCAD simulations and demonstrated techniques for device optimization

Analysis of Internally Bandlimited Multistage Cubic-Term Generators for RF Receivers

Adaptive feedforward error cancellation applied to correct distortion arising from third-order nonlinearities in RF receivers requires low-noise low-power reference cubic nonidealities. Multistage cubic-term generators utilizing cascaded nonlinear operations are ideal in this regard, but the frequency response of the interstage circuitry can introduce errors into the cubing operation. In this paper, an overview of the use of cubic-term generators in receivers relative to other applications is presented. An interstage frequency response plan is presented for a receiver cubic-term generator and is shown to function for arbitrary three-signal third-order intermodulation generation. The noise of such circuits is also considered and is shown to depend on the total incoming signal power across a particular frequency band. Finally, the effects of the interstage group delay are quantified in the context of a relevant communication standard requirement

Power supply current [IPS] based testing of CMOS amplifier circuit with and without floating gate input transistors

This work presents a case study, which attempts to improve the fault diagnosis and testability of the power supply current based testing methodology applied to a typical two-stage CMOS operational amplifier and is extended to operational amplifier with floating gate input transistors*. The proposed test method takes the advantage of good fault coverage through the use of a simple power supply current measurement based test technique, which only needs an ac input stimulus at the input and no additional circuitry. The faults simulating possible manufacturing defects have been introduced using the fault injection transistors. In the present work, variations of ac ripple in the power supply current IPS, passing through VDD under the application of an ac input stimulus is measured to detect injected faults in the CMOS amplifier. The effect of parametric variation is taken into consideration by setting tolerance limit of ± 5% on the fault-free IPS value. The fault is identified if the power supply current, IPS falls outside the deviation given by the tolerance limit. This method presented can also be generalized to the test structures of other floating-gate MOS analog and mixed signal integrated circuits

Design of Neuromemristive Systems for Visual Information Processing

Neuromemristive systems (NMSs) are brain-inspired, adaptive computer architectures based on emerging resistive memory technology (memristors). NMSs adopt a mixed-signal design approach with closely-coupled memory and processing, resulting in high area and energy efficiencies. Previous work suggests that NMSs could even supplant conventional architectures in niche application domains such as visual information processing. However, given the infancy of the field, there are still several obstacles impeding the transition of these systems from theory to practice. This dissertation advances the state of NMS research by addressing open design problems spanning circuit, architecture, and system levels. Novel synapse, neuron, and plasticity circuits are designed to reduce NMSs’ area and power consumption by using current-mode design techniques and exploiting device variability. Circuits are designed in a 45 nm CMOS process with memristor models based on multilevel (W/Ag-chalcogenide/W) and bistable (Ag/GeS2/W) device data. Higher-level behavioral, power, area, and variability models are ported into MATLAB to accelerate the overall simulation time. The circuits designed in this work are integrated into neural network architectures for visual information processing tasks, including feature detection, clustering, and classification. Networks in the NMSs are trained with novel stochastic learning algorithms that achieve 3.5 reduction in circuit area, reduced design complexity, and exhibit similar convergence properties compared to the least-mean-squares algorithm. This work also examines the effects of device-level variations on NMS performance, which has received limited attention in previous work. The impact of device variations is reduced with a partial on-chip training methodology that enables NMSs to be configured with relatively sophisticated algorithms (e.g. resilient backpropagation), while maximizing their area-accuracy tradeoff

Characterization of 28 nm FDSOI MOS and application to the design of a low-power 2.4 GHz LNA

IoT is expected to connect billions of devices all over world in the next years, and in a near future, it is expected to use LR-WPAN in a wide variety of applications. Not all the devices will require of high performance but will require of low power hungry systems since most of them will be powered with a battery. Conventional CMOS technologies cannot cover these needs even scaling it to very small regimes, which appear other problems. Hence, new technologies are emerging to cover the needs of this devices. One promising technology is the UTBB FDSOI, which achieves good performance with very good energy efficiency. This project characterizes this technology to obtain a set of parameters of interest for analog/RF design. Finally, with the help of a low-power design methodology (gm/Id approach), a design of an ULP ULV LNA is performed to check the suitability of this technology for IoT

Moving Towards Analog Functional Safety

Over the past century, the exponential growth of the semiconductor industry has led to the creation of tiny and complex integrated circuits, e.g., sensors, actuators, and smart power systems. Innovative techniques are needed to ensure the correct functionality of analog devices that are ubiquitous in every smart system. The standard ISO 26262 related to functional safety in the automotive context specifies that fault injection is necessary to validate all electronic devices. For decades, standardizing fault modeling, injection and simulation mainly focused on digital circuits and disregarding analog ones. An initial attempt is being made with the IEEE P2427 standard draft standard that started to give this field a structured and formal organization. In this context, new fault models, injection, and abstraction methodologies for analog circuits are proposed in this thesis to enhance this application field. The faults proposed by the IEEE P2427 standard draft standard are initially evaluated to understand the associated fault behaviors during the simulation. Moreover, a novel approach is presented for modeling realistic stuck-on/off defects based on oxide defects. These new defects proposed are required because digital stuck-at-fault models where a transistor is frozen in on-state or offstate may not apply well on analog circuits because even a slight variation could create deviations of several magnitudes. Then, for validating the proposed defects models, a novel predictive fault grouping based on faulty AC matrices is applied to group faults with equivalent behaviors. The proposed fault grouping method is computationally cheap because it avoids performing DC or transient simulations with faults injected and limits itself to faulty AC simulations. Using AC simulations results in two different methods that allow grouping faults with the same frequency response are presented. The first method is an AC-based grouping method that exploits the potentialities of the S-parameters ports. While the second is a Circle-based grouping based on the circle-fitting method applied to the extracted AC matrices. Finally, an open-source framework is presented for the fault injection and manipulation perspective. This framework relies on the shared semantics for reading, writing, or manipulating transistor-level designs. The ultimate goal of the framework is: reading an input design written in a specific syntax and then allowing to write the same design in another syntax. As a use case for the proposed framework, a process of analog fault injection is discussed. This activity requires adding, removing, or replacing nodes, components, or even entire sub-circuits. The framework is entirely written in C++, and its APIs are also interfaced with Python. The entire framework is open-source and available on GitHub. The last part of the thesis presents abstraction methodologies that can abstract transistor level models into Verilog-AMS models and Verilog- AMS piecewise and nonlinear models into C++. These abstracted models can be integrated into heterogeneous systems. The purpose of integration is the simulation of heterogeneous components embedded in a Virtual Platforms (VP) needs to be fast and accurate

Analog integrated circuit design in ultra-thin oxide CMOS technologies with significant direct tunneling-induced gate current

The ability to do mixed-signal IC design in a CMOS technology has been a driving force for manufacturing personal mobile electronic products such as cellular phones, digital audio players, and personal digital assistants. As CMOS has moved to ultra-thin oxide technologies, where oxide thicknesses are less than 3 nm, this type of design has been threatened by the direct tunneling of carriers though the gate oxide. This type of tunneling, which increases exponentially with decreasing oxide thickness, is a source of MOSFET gate current. Its existence invalidates the simplifying design assumption of infinite gate resistance. Its problems are typically avoided by switching to a high-&kappa/metal gate technology or by including a second thick(er) oxide transistor. Both of these solutions come with undesirable increases in cost due to extra mask and processing steps. Furthermore, digital circuit solutions to the problems created by direct tunneling are available, while analog circuit solutions are not. Therefore, it is desirable that analog circuit solutions exist that allow the design of mixed-signal circuits with ultra-thin oxide MOSFETs. This work presents a methodology that develops these solutions as a less costly alternative to high-&kappa/metal gate technologies or thick(er) oxide transistors. The solutions focus on transistor sizing, DC biasing, and the design of current mirrors and differential amplifiers. They attempt to minimize, balance, and cancel the negative effects of direct tunneling on analog design in traditional (non-high-&kappa/metal gate) ultra-thin oxide CMOS technologies. They require only ultra-thin oxide devices and are investigated in a 65 nm CMOS technology with a nominal VDD of 1 V and a physical oxide thickness of 1.25 nm. A sub-1 V bandgap voltage reference that requires only ultra-thin oxide MOSFETs is presented (TC = 251.0 ppm/°C). It utilizes the developed methodology and illustrates that it is capable of suppressing the negative effects of direct tunneling. Its performance is compared to a thick-oxide voltage reference as a means of demonstrating that ultra-thin oxide MOSFETs can be used to build the analog component of a mixed-signal system

Semiconductor Device Modeling and Simulation for Electronic Circuit Design

This chapter covers different methods of semiconductor device modeling for electronic circuit simulation. It presents a discussion on physics-based analytical modeling approach to predict device operation at specific conditions such as applied bias (e.g., voltages and currents); environment (e.g., temperature, noise); and physical characteristics (e.g., geometry, doping levels). However, formulation of device model involves trade-off between accuracy and computational speed and for most practical operation such as for SPICE-based circuit simulator, empirical modeling approach is often preferred. Thus, this chapter also covers empirical modeling approaches to predict device operation by implementing mathematically fitted equations. In addition, it includes numerical device modeling approaches, which involve numerical device simulation using different types of commercial computer-based tools. Numerical models are used as virtual environment for device optimization under different conditions and the results can be used to validate the simulation models for other operating conditions