A 64-channel, 1.1-pA-accurate on-chip potentiostat for parallel electrochemical monitoring

Electrochemical monitoring is crucial for both industrial applications, such as microbial electrolysis and corrosion monitoring as well as consumer applications such as personal health monitoring. Yet, state-of-the-art integrated potentiostat monitoring devices have few parallel channels with limited flexibility due to their channel architecture. This work presents a novel, widely scalable channel architecture using a switch capacitor based Howland current pump and a digital potential controller. An integrated, 64-channel CMOS potentiostat array has been fabricated. Each individual channel has a dynamic current range of 120dB with 1.1pA precision with up to 100kHz bandwidth. The on-chip working electrodes are post-processed with gold to ensure (bio)electrochemical compatibility

Low-Voltage Ultra-Low-Power Current Conveyor Based on Quasi-Floating Gate Transistors

The field of low-voltage low-power CMOS technology has grown rapidly in recent years; it is an essential prerequisite particularly for portable electronic equipment and implantable medical devices due to its influence on battery lifetime. Recently, significant improvements in implementing circuits working in the low-voltage low-power area have been achieved, but circuit designers face severe challenges when trying to improve or even maintain the circuit performance with reduced supply voltage. In this paper, a low-voltage ultra-low-power current conveyor second generation CCII based on quasi-floating gate transistors is presented. The proposed circuit operates at a very low supply voltage of only ±0.4 V with rail-to-rail voltage swing capability and a total quiescent power consumption of mere 9.5 µW. Further, the proposed circuit is not only able to process the AC signal as it's usual at quasi-floating gate transistors but also the DC which extends the applicability of the proposed circuit. In conclusion, an application example of the current-mode quadrature oscillator is presented. PSpice simulation results using the 0.18 µm TSMC CMOS technology are included to confirm the attractive properties of the proposed circuit

Asynchronous techniques for system-on-chip design

SoC design will require asynchronous techniques as the large parameter variations across the chip will make it impossible to control delays in clock networks and other global signals efficiently. Initially, SoCs will be globally asynchronous and locally synchronous (GALS). But the complexity of the numerous asynchronous/synchronous interfaces required in a GALS will eventually lead to entirely asynchronous solutions. This paper introduces the main design principles, methods, and building blocks for asynchronous VLSI systems, with an emphasis on communication and synchronization. Asynchronous circuits with the only delay assumption of isochronic forks are called quasi-delay-insensitive (QDI). QDI is used in the paper as the basis for asynchronous logic. The paper discusses asynchronous handshake protocols for communication and the notion of validity/neutrality tests, and completion tree. Basic building blocks for sequencing, storage, function evaluation, and buses are described, and two alternative methods for the implementation of an arbitrary computation are explained. Issues of arbitration, and synchronization play an important role in complex distributed systems and especially in GALS. The two main asynchronous/synchronous interfaces needed in GALS-one based on synchronizer, the other on stoppable clock-are described and analyzed

A scalable multi-core architecture with heterogeneous memory structures for Dynamic Neuromorphic Asynchronous Processors (DYNAPs)

Neuromorphic computing systems comprise networks of neurons that use asynchronous events for both computation and communication. This type of representation offers several advantages in terms of bandwidth and power consumption in neuromorphic electronic systems. However, managing the traffic of asynchronous events in large scale systems is a daunting task, both in terms of circuit complexity and memory requirements. Here we present a novel routing methodology that employs both hierarchical and mesh routing strategies and combines heterogeneous memory structures for minimizing both memory requirements and latency, while maximizing programming flexibility to support a wide range of event-based neural network architectures, through parameter configuration. We validated the proposed scheme in a prototype multi-core neuromorphic processor chip that employs hybrid analog/digital circuits for emulating synapse and neuron dynamics together with asynchronous digital circuits for managing the address-event traffic. We present a theoretical analysis of the proposed connectivity scheme, describe the methods and circuits used to implement such scheme, and characterize the prototype chip. Finally, we demonstrate the use of the neuromorphic processor with a convolutional neural network for the real-time classification of visual symbols being flashed to a dynamic vision sensor (DVS) at high speed.Comment: 17 pages, 14 figure

Design, Characterization and Analysis of Component Level Electrostatic Discharge (ESD) Protection Solutions

Electrostatic Discharges (ESD) is a significant hazard to electronic components and systems. Based on a specific process technology, a given circuit application requires a customized ESD consideration that meets all the requirements such as the core circuit\u27s operating condition, maximum accepted leakage current, breakdown conditions for the process and overall device sizes. In every several years, there will be a new process technology becomes mature, and most of those new technology requires custom design of effective ESD protection solution. And usually the design window will shrinks due to the evolving of the technology becomes smaller and smaller. The ESD related failure is a major IC reliability concern and results in a loss of millions dollars each year in the semiconductor industry. To emulate the real word stress condition, several ESD stress models and test methods have been developed. The basic ESD models are Human Body model (HBM), Machine Mode (MM), and Charge Device Model (CDM). For the system-level ESD robustness, it is defined by different standards and specifications than component-level ESD requirements. International Electrotechnical Commission (IEC) 61000-4-2 has been used for the product and the Human Metal Model (HMM) has been used for the system at the wafer level. Increasingly stringent design specifications are forcing original equipment manufacturers (OEMs) to minimize the number of off-chip components. This is the case in emerging multifunction mobile, industrial, automotive and healthcare applications. It requires a high level of ESD robustness and the integrated circuit (IC) level, while finding ways to streamline the ESD characterization during early development cycle. To enable predicting the ESD performance of IC\u27s pins that are directly exposed to a system-level stress condition, a new the human metal model (HMM) test model has been introduced. In this work, a new testing methodology for product-level HMM characterization is introduced. This testing framework allows for consistently identifying ESD-induced failures in a product, substantially simplifying the testing process, and significantly reducing the product evaluation time during development cycle. It helps eliminates the potential inaccuracy provided by the conventional characterization methodology. For verification purposes, this method has been applied to detect the failures of two different products. Addition to the exploration of new characterization methodology that provides better accuracy, we also have looked into the protection devices itself. ICs for emerging high performance precision data acquisition and transceivers in industrial, automotive and wireless infrastructure applications require effective and ESD protection solutions. These circuits, with relatively high operating voltages at the Input/Output (I/O) pins, are increasingly being designed in low voltage Complementary Metal-Oxide-Semiconductor (CMOS) technologies to meet the requirements of low cost and large scale integration. A new dual-polarity SCR optimized for high bidirectional blocking voltages, high trigger current and low capacitance is realized in a sub 3-V, 180-nm CMOS process. This ESD device is designed for a specific application where the operating voltage at the I/O is larger than that of the core circuit. For instance, protecting high voltage swing I/Os in CMOS data acquisition system (DAS) applications. In this reference application, an array of thin film resistors voltage divider is directly connected to the interface pin, reducing the maximum voltage that is obtained at the core device input down to ± 1-5 V. Its ESD characteristics, including the trigger voltage and failure current, are compared against those of a typical CMOS-based SCR. Then, we have looked into the ESD protection designs into more advanced technology, the 28-nm CMOS. An ESD protection design builds on the multiple discharge-paths ESD cell concept and focuses the attention on the detailed design, optimization and realization of the in-situ ESD protection cell for IO pins with variable operation voltages. By introducing different device configurations fabricated in a 28-nm CMOS process, a greater flexibility in the design options and design trade-offs can be obtained in the proposed topology, thus achieving a higher integration and smaller cell size definition for multi-voltage compatibility interface ESD protection applications. This device is optimized for low capacitance and synthesized with the circuit IO components for in-situ ESD protection in communication interface applications developed in a 28-nm, high-k, and metal-gate CMOS technology. ESD devices have been used in different types of applications and also at different environment conditions, such as high temperature. At the last section of this research work, we have performed an investigation of several different ESD devices\u27 performance under various temperature conditions. And it has been shown that the variations of the device structure can results different ESD performance, and some devices can be used at the high temperature and some cannot. And this investigation also brings up a potential threat to the current ESD protection devices that they might be very vulnerable to the latch-up issue at the higher temperature range

IDPAL – A Partially-Adiabatic Energy-Efficient Logic Family: Theory and Applications to Secure Computing

Low-power circuits and issues associated with them have gained a significant amount of attention in recent years due to the boom in portable electronic devices. Historically, low-power operation relied heavily on technology scaling and reduced operating voltage, however this trend has been slowing down recently due to the increased power density on chips. This dissertation introduces a new very-low power partially-adiabatic logic family called Input-Decoupled Partially-Adiabatic Logic (IDPAL) with applications in low-power circuits. Experimental results show that IDPAL reduces energy usage by 79% compared to equivalent CMOS implementations and by 25% when compared to the best adiabatic implementation. Experiments ranging from a simple buffer/inverter up to a 32-bit multiplier are explored and result in consistent energy savings, showing that IDPAL could be a viable candidate for a low-power circuit implementation. This work also shows an application of IDPAL to secure low-power circuits against power analysis attacks. It is often assumed that encryption algorithms are perfectly secure against attacks, however, most times attacks using side channels on the hardware implementation of an encryption operation are not investigated. Power analysis attacks are a subset of side channel attacks and can be implemented by measuring the power used by a circuit during an encryption operation in order to obtain secret information from the circuit under attack. Most of the previously proposed solutions for power analysis attacks use a large amount of power and are unsuitable for a low-power application. The almost-equal energy consumption for any given input in an IDPAL circuit suggests that this logic family is a good candidate for securing low-power circuits again power analysis attacks. Experimental results ranging from small circuits to large multipliers are performed and the power-analysis attack resistance of IDPAL is investigated. Results show that IDPAL circuits are not only low-power but also the most secure against power analysis attacks when compared to other adiabatic low-power circuits. Finally, a hybrid adiabatic-CMOS microprocessor design is presented. The proposed microprocessor uses IDPAL for the implementation of circuits with high switching activity (e.g. ALU) and CMOS logic for other circuits (e.g. memory, controller). An adiabatic-CMOS interface for transforming adiabatic signals to square-wave signals is presented and issues associated with a hybrid implementation and their solutions are also discussed

Rail-to-rail class AB CMOS tunable transconductor with -52dB IM3 at 1MHz

A novel CMOS tunable transconductor is presented. The circuit operates in classAB hence featuring power efficiency. The internal feedback employed and the use of a linearized triode transistor for voltage-to-current conversion allows achieving high linearity. Rail-to-rail input range is obtained by using floatinggate transistors. Measurement results for a test chip prototype in a 0.5µm standard CMOS process show an IM3 of -52.13dB at 1MHz for a 2Vpp input and a power consumption of 2.2mW

A novel Digital OTA topology with 66-dB DC Gain and 12.3-kHz Bandwidth

The paper introduces an enhanced digital OTA topology which allows increasing the DC gain thanks to the adoption of an inverter-based output stage. Moreover, a new equivalent small-signal model is proposed which allows to simplify the circuit analysis and paves the way to new frequency compensation strategies. Designed using a 28-nm standard CMOS technology and working at 0.3-V power supply, post-layout simulations show a 66-dB gain and a 12.3-kHz gain bandwidth product while driving a 250-pF capacitive load. As compared to other ultra-low-voltage OTAs in literature, an increase of small and large signal performance, respect to area occupation, equal to 4.6X and 1.5X, respectively, is obtained

Low power class-AB VCII with extended dynamic range

voltage swing both at the X terminal and at the Z terminal. The VCII consists of a regulated common gate configuration at the Y current input terminal and a class-AB complementary-MOS closed loop output voltage follower that ensures the voltage buffering action between the voltage input X and the voltage output Z terminals. Spice simulation results using AMS 0.35 μm with a ±0.9 V supply voltage are provided to demonstrate the validity of the proposed topology. With a total power consumption of 28 μW, the VCII achieves a voltage swing at the X terminal of ±0.8 V, whereas a ±0.72 V is achieved on the Z terminal. Simulation results for DC and AC voltage and current gains are given, as well as harmonic distortions and noise figures. A final comparison table is also presented, where the proposed VCII is compared with other solutions presented in the literature