Large-Signal Simulation of 94 GHz Pulsed Silicon DDR IMPATTs Including the Temperature Transient Effect

In this paper large-signal modeling and simulation has been carried to study the frequency chirping due to temperature transients and the large-signal power and efficiency of pulsed silicon Double-Drift Region (DDR) Impact Avalanche Transit Time (IMPATT) device operating at 94 GHz. A large-signal simulation method based on non-sinusoidal voltage excitation incorporating the transient thermal effect has been developed by the authors. Results show that the device is capable of delivering a peak pulsed power output of 17.5 W with 12.8% efficiency when the voltage modulation is 60%. The maximum junction temperature rise is 350.2 K for a peak pulsed bias current of 6.79 A with 100 ns pulsewidth and 0.5 percent duty cycle; whereas the chirp bandwidth is 8.3 GHz

High efficiency IMPATT diodes for 60 GHz intersatellite link applications

Intersatellite links are expected to play an increasingly important role in future satellite systems. Improved components are required to properly utilize the wide bandwidth allocated for intersatellite link applications around 60 GHz. IMPATT diodes offer the highest potential performance as solid state power sources for a 60 GHz transmitter. Presently available devices do not have the desired power and efficiency. High efficiency, high power IMPATT diodes for intersatellite link applications are being developed by NASA and other government agencies. The development of high efficiency 60 GHz IMPATT diodes by NASA is described

Sixty GHz IMPATT diode development

The objective of this program is to develop 60 GHz GaAs IMPATT Diodes suitable for communications applications. The performance goal of the 60 GHz IMPATT is 1W CW output power with a conversion efficiency of 15 percent and 10 year life time. During the course of the program, double drift (DD) GaAs IMPATT Diodes have been developed resulting in the state of the art performance at V band frequencies. A CW output power of 1.12 W was demonstrated at 51.9 GHz with 9.7 percent efficiency. The best conversion efficiency achieved was 15.3 percent. V band DD GaAs IMPATTs were developed using both small signal and large signal analyses. GaAs wafers of DD flat, DD hybrid, and DD Read profiles using molecular beam epitaxy (MBE) were developed with excellent doping profile control. Wafer evaluation was routinely made by the capacitance versus voltage (C-V) measurement. Ion mass spectrometry (SIMS) analysis was also used for more detailed profile evaluation

Solid state Ku-band spacecraft transmitters

A transmitter is considered that consists of GaAs IMPATT and Read diodes operating in a microstrip circuit environment to provide amplification with a minimum of 63 db small signal gain and a minimum compressed gain at 5 W output of 57 db. Reported are Schottky-Read diode design and fabrication, microstrip and circulator optimization, preamplifier development, power amplifier development, dc-to-dc converter design, and integration of the breadboard transmitter modules. A four-stage power amplifier in cascade with a three-stage preamplifier had an overall gain of 56.5 db at 13.5 GHz with a power output of 4.5 W. A single-stage Read amplifier delivered 5.9 W with 4 db gain at 22% efficiency

Microwave device investigations

Several tasks were active during this report period: (1) noise modulation in avalanche-diode devices; (2) schottky-barrier microwave devices; (3) intermodulation products in IMPATT diode amplifiers; (4) harmonic generation using Read-diode varactors; and (5) fabrication of GaAs Schottky-barrier IMPATT diodes

The starting characteristics of Trapatt oscillators.

The aim of the work described in this thesis was to examine the starting characteristics of Trapatt (Trapped Plasma Avalanche Triggered Transit) oscillators capable of producing high (peak) power at high efficiencies, normally in L and S bands. General approach was aimed to be mainly experimental using deep diffused silicon devices suitable for operation in S band. To perform the experiments an oscillator circuit, in 7 mm coaxial line was constructed, suitable for using a device in S-4 package. The overall arrangement of the experimental setup was similar to one described by various other researchers for observing the dynamic current and voltage waveforms. The C-V profiling experiment produced a characteristic which suggested that the depletion layer capacitance of the device does not really saturate for increasing voltage even upto its breakdown voltage. A detailed analysis of the C-V plot and related features was carried out and it was concluded that the actual doping distribution appears to be favouring a graded junction. Experimentally it was established that the device has negative resistance at VHF and also at d.c. It has also been shown that the device has small signal negative resistance at the operating frequency of the oscillator. Detailed investigations into the starting characteristics indicated that the oscillations start from the beginning at the final fundamental frequency of the oscillator. For the device and the circuit reported in this thesis no evidence could be found to suggest that Impatt type oscillations trigger the Trapatt oscillations. As a result of our experiments it has been possible to establish that the rate of growth and the time taken for the oscillations to start depend upon the d.c.drive. There are strong indications that in future Trapatt devices could successfully be employed in various systems as a microwave generator

The solid-state Ku-band power amplifier

A survey of IMPATT diodes and negative resistance amplifiers is presented. The first phase of the amplifier effort is discussed in which a single diode reflection amplifier delivering 0.5 watt at 15 GHz with 10-dB gain over a 1-GHz band was developed. The design of a dominant mode resonant combiner is described along with the characterization of the IMPATT diodes. Results are given on the complete amplifier and on the thermal and graceful failure characteristics of the unit