Vega: A Ten-Core SoC for IoT Endnodes with DNN Acceleration and Cognitive Wake-Up from MRAM-Based State-Retentive Sleep Mode

The Internet-of-Things (IoT) requires endnodes with ultra-low-power always-on capability for a long battery lifetime, as well as high performance, energy efficiency, and extreme flexibility to deal with complex and fast-evolving near-sensor analytics algorithms (NSAAs). We present Vega, an IoT endnode system on chip (SoC) capable of scaling from a 1.7- μW fully retentive cognitive sleep mode up to 32.2-GOPS (at 49.4 mW) peak performance on NSAAs, including mobile deep neural network (DNN) inference, exploiting 1.6 MB of state-retentive SRAM, and 4 MB of non-volatile magnetoresistive random access memory (MRAM). To meet the performance and flexibility requirements of NSAAs, the SoC features ten RISC-V cores: one core for SoC and IO management and a nine-core cluster supporting multi-precision single instruction multiple data (SIMD) integer and floating-point (FP) computation. Vega achieves the state-of-the-art (SoA)-leading efficiency of 615 GOPS/W on 8-bit INT computation (boosted to 1.3 TOPS/W for 8-bit DNN inference with hardware acceleration). On FP computation, it achieves the SoA-leading efficiency of 79 and 129 GFLOPS/W on 32- and 16-bit FP, respectively. Two programmable machine learning (ML) accelerators boost energy efficiency in cognitive sleep and active states

Design considerations of a nonvolatile accumulator-based 8-bit processor

The rise of the Internet of Things (IoT) and theconstant growth of portable electronics have leveraged the con-cern with energy consumption. Nonvolatile memory (NVM)emerged as a solution to mitigate the problem due to its abilityto retain data on sleep mode without a power supply. Non-volatile processors (NVPs) may further improve energy savingby using nonvolatile flip-flops (NVFFs) to store system state,allowing the device to be turned off when idle and resume ex-ecution instantly after power-on. In view of the potential pre-sented by NVPs, this work describes the initial steps to imple-ment a nonvolatile version of Neander, a hypothetical processorcreated for educational purposes. First, we implemented Ne-ander in Register Transfer Level (RTL), separating the com-binational logic from the sequential elements. Then, the lat-ter was replaced by circuit-level descriptions of volatile flip-flops. We then validated this implementation by employinga mixed-signal simulation over a set of benchmarks. Resultshave shown the expected behavior for the whole instructionset. Then, we implemented circuit-level descriptions of mag-netic tunnel junction (MTJ) based nonvolatile flip-flops, usingan open-source MTJ model. These elements were exhaustivelyvalidated using electrical simulations. With these results, weintend to carry on the implementation and fully equip our pro-cessor with nonvolatile features such as instant wake-up

TinyVers: A Tiny Versatile System-on-chip with State-Retentive eMRAM for ML Inference at the Extreme Edge

Extreme edge devices or Internet-of-thing nodes require both ultra-low power always-on processing as well as the ability to do on-demand sampling and processing. Moreover, support for IoT applications like voice recognition, machine monitoring, etc., requires the ability to execute a wide range of ML workloads. This brings challenges in hardware design to build flexible processors operating in ultra-low power regime. This paper presents TinyVers, a tiny versatile ultra-low power ML system-on-chip to enable enhanced intelligence at the Extreme Edge. TinyVers exploits dataflow reconfiguration to enable multi-modal support and aggressive on-chip power management for duty-cycling to enable smart sensing applications. The SoC combines a RISC-V host processor, a 17 TOPS/W dataflow reconfigurable ML accelerator, a 1.7 $\mu$W deep sleep wake-up controller, and an eMRAM for boot code and ML parameter retention. The SoC can perform up to 17.6 GOPS while achieving a power consumption range from 1.7 $\mu$W-20 mW. Multiple ML workloads aimed for diverse applications are mapped on the SoC to showcase its flexibility and efficiency. All the models achieve 1-2 TOPS/W of energy efficiency with power consumption below 230 $\mu$W in continuous operation. In a duty-cycling use case for machine monitoring, this power is reduced to below 10 $\mu$W.Comment: Accepted in IEEE Journal of Solid-State Circuit

Energy-Efficient System Architectures for Intermittently-Powered IoT Devices

Various industry forecasts project that, by 2020, there will be around 50 billion devices connected to the Internet of Things (IoT), helping to engineer new solutions to societal-scale problems such as healthcare, energy conservation, transportation, etc. Most of these devices will be wireless due to the expense, inconvenience, or in some cases, the sheer infeasibility of wiring them. With no cord for power and limited space for a battery, powering these devices for operating in a set-and-forget mode (i.e., achieve several months to possibly years of unattended operation) becomes a daunting challenge. Environmental energy harvesting (where the system powers itself using energy that it scavenges from its operating environment) has been shown to be a promising and viable option for powering these IoT devices. However, ambient energy sources (such as vibration, wind, RF signals) are often minuscule, unreliable, and intermittent in nature, which can lead to frequent intervals of power loss. Performing computations reliably in the face of such power supply interruptions is challenging

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

A Construction Kit for Efficient Low Power Neural Network Accelerator Designs

Implementing embedded neural network processing at the edge requires efficient hardware acceleration that couples high computational performance with low power consumption. Driven by the rapid evolution of network architectures and their algorithmic features, accelerator designs are constantly updated and improved. To evaluate and compare hardware design choices, designers can refer to a myriad of accelerator implementations in the literature. Surveys provide an overview of these works but are often limited to system-level and benchmark-specific performance metrics, making it difficult to quantitatively compare the individual effect of each utilized optimization technique. This complicates the evaluation of optimizations for new accelerator designs, slowing-down the research progress. This work provides a survey of neural network accelerator optimization approaches that have been used in recent works and reports their individual effects on edge processing performance. It presents the list of optimizations and their quantitative effects as a construction kit, allowing to assess the design choices for each building block separately. Reported optimizations range from up to 10'000x memory savings to 33x energy reductions, providing chip designers an overview of design choices for implementing efficient low power neural network accelerators

Normally-Off Computing and Checkpoint/Rollback for Fast, Low-Power, and Reliable Devices

International audienceSince the advent of complementary metal oxide semiconductors (CMOS), the number of transistors per die has continued to increase, reaching today several billion transistors. As a result, it has been possible to design and fabricate smart devices able to run at high speed. However, the power consumption of systems-on-chip has significantly increased due to the high density integration and the high leakage power of current CMOS transistors. As a result, the limits of heat dissipation make further improvement in performance difficult. A high level of autonomy for battery-powered devices is a real challenge. To deal with these issues, spin-transfer-torque magnetic random-access memory (STT-MRAM) technology is seen as a promising solution. In addition to its attractive performance features, STT-MRAM can bring nonvolatility to a system to allow full data retention after a complete shutdown while maintaining a fast wake-up time. Considering two 32-bit embedded processors, this letter shows how STT-MRAM can improve energy efficiency and reliability of future embedded systems thanks to normally-off computing and checkpointing/rollback techniques. A detailed analysis is performed to evaluate the cost related to the backup/recovery of the system. Index Terms—Spintronic memory and logic, embedded processor, spin-transfer-torque, magnetic random-access memory

Enabling Reliable, Efficient, and Secure Computing for Energy Harvesting Powered IoT Devices

Energy harvesting is one of the most promising techniques to power devices for future generation IoT. While energy harvesting does not have longevity, safety, and recharging concerns like traditional batteries, its instability brings a new challenge to the embedded systems: the energy harvested from environment is usually weak and intermittent. With traditional CMOS based technology, whenever the power is off, the computation has to start from the very beginning. Compared with existing CMOS based memory devices, emerging non-volatile memory devices such as PCM and STT-RAM, have the benefits of sustaining the data even when there is no power. By checkpointing the processor's volatile state to non-volatile memory, a program can resume its execution immediately after power comes back on again instead of restarting from the very beginning with checkpointing techniques. However, checkpointing is not sufficient for energy harvesting systems. First, the program execution resumed from the last checkpoint might not execute correctly and causes inconsistency problem to the system. This problem is due to the inconsistency between volatile system state and non-volatile system state during checkpointing. Second, the process of checkpointing consumes a considerable amount of energy and time due to the slow and energy-consuming write operation of non-volatile memory. Finally, connecting to the internet poses many security issues to energy harvesting IoT devices. Traditional data encryption methods are both energy and time consuming which do not fit the resource constrained IoT devices. Therefore, a light-weight encryption method is in urgent need for securing IoT devices. Targeting those three challenges, this dissertation proposes three techniques to enable reliable, efficient, and secure computing in energy harvesting IoT devices. First, a consistency-aware checkpointing technique is proposed to avoid inconsistency errors generated from the inconsistency between volatile state and non-volatile state. Second, checkpoint aware hybrid cache architecture is proposed to guarantee reliable checkpointing while maintaining a low checkpointing overhead from cache. Finally, to ensure the security of energy harvesting IoT devices, an energy-efficient in-memory encryption implementation for protecting the IoT device is proposed which can quickly encrypts the data in non-volatile memory and protect the embedded system physical and on-line attacks