480 research outputs found
Non-Drude Optical Conductivity of (III,Mn)V Ferromagnetic Semiconductors
We present a numerical model study of the zero-temperature infrared optical
properties of (III,Mn)V diluted magnetic semiconductors. Our calculations
demonstrate the importance of treating disorder and interaction effects
simultaneously in modelling these materials. We find that the conductivity has
no clear Drude peak, that it has a broadened inter-band peak near 220 meV, and
that oscillator weight is shifted to higher frequencies by stronger disorder.
These results are in good qualitative agreement with recent thin film
absorption measurements. We use our numerical findings to discuss the use of
f-sum rules evaluated by integrating optical absorption data for accurate
carrier-density estimates.Comment: 7 pages, 3 figure
Single-Band Model for Diluted Magnetic Semiconductors: Dynamical and Transport Properties and Relevance of Clustered States
Dynamical and transport properties of a simple single-band spin-fermion
lattice model for (III,Mn)V diluted magnetic semiconductors (DMS) is here
discussed using Monte Carlo simulations. This effort is a continuation of
previous work (G. Alvarez, Phys. Rev. Lett. 89, 277202 (2002)) where the static
properties of the model were studied. The present results support the view that
the relevant regime of J/t (standard notation) is that of intermediate
coupling, where carriers are only partially trapped near Mn spins, and locally
ordered regions (clusters) are present above the Curie temperature T_C. This
conclusion is based on the calculation of the resistivity vs. temperature, that
shows a soft metal to insulator transition near T_C, as well on the analysis of
the density-of-states and optical conductivity. In addition, in the clustered
regime a large magnetoresistance is observed in simulations. Formal analogies
between DMS and manganites are also discussed.Comment: Revtex4, 20 figures. References updated, minor changes to figures and
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Optical Properties of III-Mn-V Ferromagnetic Semiconductors
We review the first decade of extensive optical studies of ferromagnetic,
III-Mn-V diluted magnetic semiconductors. Mn introduces holes and local moments
to the III-V host, which can result in carrier mediated ferromagnetism in these
disordered semiconductors. Spectroscopic experiments provide direct access to
the strength and nature of the exchange between holes and local moments; the
degree of itineracy of the carriers; and the evolution of the states at the
Fermi energy with doping. Taken together, diversity of optical methods reveal
that Mn is an unconventional dopant, in that the metal to insulator transition
is governed by the strength of the hybridization between Mn and its p-nictogen
neighbor. The interplay between the optical, electronic and magnetic properties
of III-Mn-V magnetic semiconductors is of fundamental interest and may enable
future spin-optoelectronic devices.Comment: Topical Revie
Suppressed reflectivity due to spin-controlled localization in a magnetic semiconductor
The narrow gap semiconductor FeSi owes its strong paramagnetism to
electron-correlation effects. Partial Co substitution for Fe produces a
spin-polarized doped semiconductor. The spin-polarization causes suppression of
the metallic reflectivity and increased scattering of charge carriers, in
contrast to what happens in other magnetic semiconductors, where magnetic order
reduces the scattering. The loss of metallicity continues progressively even
into the fully polarized state, and entails as much as a 25% reduction in
average mean-free path. We attribute the observed effect to a deepening of the
potential wells presented by the randomly distributed Co atoms to the majority
spin carriers. This mechanism inverts the sequence of steps for dealing with
disorder and interactions from that in the classic Al'tshuler Aronov approach -
where disorder amplifies the Coulomb interaction between carriers - in that
here, the Coulomb interaction leads to spin polarization which in turn
amplifies the disorder-induced scattering.Comment: 6 figures Submitted to PR
Dielectric Function of Diluted Magnetic Semiconductors in the Infrared Regime
We present a study of the dielectric function of metallic (III,Mn)V diluted
magnetic semiconductors in the infrared regime. Our theoretical approach is
based on the kinetic exchange model for carrier induced (III,Mn)V
ferromagnetism. The dielectric function is calculated within the random phase
approximation and, within this metallic regime, we treat disorder effects
perturbatively and thermal effects within the mean field approximation. We also
discuss the implications of this calculations on carrier concentration
measurements from the optical f-sum rule and the analysis of plasmon-phonon
coupled modes in Raman spectra.Comment: 6 pages, 6 figures include
Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor
The band structure of a prototypical dilute ferromagnetic semiconductor,
GaMnAs, is studied across the phase diagram via optical
spectroscopy. We prove that the Fermi energy () resides in a Mn induced
impurity band (IB). This conclusion is based upon careful analysis of the
frequency and temperature dependence of the optical conductivity
(). From our analysis of we infer
a large effective mass () of the carriers, supporting the view that
conduction occurs in an IB. Our results also provide useful insights into the
transport properties of Mn-doped GaAs.Comment: 4 pages, 4 figure
Large Anomalous Hall effect in a silicon-based magnetic semiconductor
Magnetic semiconductors are attracting high interest because of their
potential use for spintronics, a new technology which merges electronics and
manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently
emerged as the most popular materials for this new technology. While Curie
temperatures are rising towards room temperature, these materials can only be
fabricated in thin film form, are heavily defective, and are not obviously
compatible with Si. We show here that it is productive to consider transition
metal monosilicides as potential alternatives. In particular, we report the
discovery that the bulk metallic magnets derived from doping the narrow gap
insulator FeSi with Co share the very high anomalous Hall conductance of
(GaMn)As, while displaying Curie temperatures as high as 53 K. Our work opens
up a new arena for spintronics, involving a bulk material based only on
transition metals and Si, and which we have proven to display a variety of
large magnetic field effects on easily measured electrical properties.Comment: 19 pages with 5 figure
Optical conductivity of Mn doped GaAs
We study the optical conductivity in the III-V diluted magnetic semiconductor
GaMnAs and compare our calculations to available experimental data. Our model
study is able to reproduce both qualitatively and quantitatively the observed
measurements. We show that compensation (low carrier density) leads, in
agreement to the observed measurements to a red shift of the broad peak located
at approximately 200 meV for the optimally annealed sample. The non
perturbative treatment appears to be essential, otherwise a blueshift and an
incorrect amplitude would be obtained. By calculating the Drude weight (order
parameter) we establish the metal-insulator phase diagram. We indeed find that
Mn doped GaAs is close to the metal-insulator transition and that for 5 and
7 doped samples, 20 of the carriers only are delocalized. We have found
that the optical mass is approximately 2 m. We have also interesting
results for overdoped samples which could be experimentally realized by Zn
codoping.Comment: the manuscript has been extended, new figures are include
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