Noise shaping Asynchronous SAR ADC based time to digital converter

Time-to-digital converters (TDCs) are key elements for the digitization of timing information in modern mixed-signal circuits such as digital PLLs, DLLs, ADCs, and on-chip jitter-monitoring circuits. Especially, high-resolution TDCs are increasingly employed in on-chip timing tests, such as jitter and clock skew measurements, as advanced fabrication technologies allow fine on-chip time resolutions. Its main purpose is to quantize the time interval of a pulse signal or the time interval between the rising edges of two clock signals. Similarly to ADCs, the performance of TDCs are also primarily characterized by Resolution, Sampling Rate, FOM, SNDR, Dynamic Range and DNL/INL. This work proposes and demonstrates 2nd order noise shaping Asynchronous SAR ADC based TDC architecture with highest resolution of 0.25 ps among current state of art designs with respect to post-layout simulation results. This circuit is a combination of low power/High Resolution 2nd Order Noise Shaped Asynchronous SAR ADC backend with simple Time to Amplitude converter (TAC) front-end and is implemented in 40nm CMOS technology. Additionally, special emphasis is given on the discussion on various current state of art TDC architectures.Electrical and Computer Engineerin

Fast, non-monte-carlo estimation of transient performance variation due to device mismatch

This paper describes an efficient way of simulating the effects of device random mismatch on circuit transient characteristics, such as variations in delay or in frequency. The proposed method models DC random offsets as equivalent AC pseudo-noises and leverages the fast, linear periodically time-varying (LPTV) noise analysis available from RF circuit simulators. Therefore, the method can be considered as an extension to DC match analysis and offers a large speed-up compared to the traditional Monte-Carlo analysis. Although the assumed linear perturbation model is valid only for small variations, it enables easy ways to estimate correlations among variations and identify the most sensitive design parameters to mismatch, all at no additional simulation cost. Three benchmarks measuring the variations in the input offset voltage of a clocked comparator, the delay of a logic path, and the frequency of an oscillator demonstrate the speed improvement of about 100-1000x compared to a 1000-point Monte-Carlo method

Low-frequency noise impact on CMOS image sensors

CMOS image sensors are nowadays extensively used in imaging applications even for high-end applications. This is really possible thanks to a reduction of noise obtained, among others, by Correlated Double Sampling (CDS) readout. Random Telegraph Signal (RTS) noise has thus become an issue for low light level applications especially in the context of downscaling transistor size. This paper describes the analysis of in-pixel source follower transistor RTS noise filtering by CDS circuit. The measurement of a non Gaussian distribution with a positive skew of image sensor output noise is analysed. Impact of dimensions (W and L) of the in-pixel source follower is demonstrated. Circuit to circuit pixel output noise dispersion on 12 circuits coming from 3 different wafers is also analysed and weak dispersion is seen

Analysis and Optimization of Noise Response for Low-Noise CMOS Image Sensors

CMOS image sensors are nowadays widely used in imaging applications and particularly in low light flux applications. This is really possible thanks to a reduction of noise obtained, among others, by the use of pinned photodiode associated with a Correlated Double Sampling readout. It reveals new noise sources which become the major contributors. This paper presents noise measurements on low-noise CMOS image sensor. Image sensor noise is analyzed and optimization is done in order to reach an input referred noise of 1 electron rms by column gain amplifier insertion and dark current noise optimization. Pixel array noise histograms are analyzed to determine noise impact of dark current and column gain amplifier insertion. Transfer noise impact, due to the use of pinned photodiode (4T photodiode), is also measured and analyzed by a specific readout sequence

A programmable microsystem using system-on-chip for real-time biotelemetry

A telemetry microsystem, including multiple sensors, integrated instrumentation and a wireless interface has been implemented. We have employed a methodology akin to that for System-on-Chip microelectronics to design an integrated circuit instrument containing several "intellectual property" blocks that will enable convenient reuse of modules in future projects. The present system was optimized for low-power and included mixed-signal sensor circuits, a programmable digital system, a feedback clock control loop and RF circuits integrated on a 5 mm × 5 mm silicon chip using a 0.6 μm, 3.3 V CMOS process. Undesirable signal coupling between circuit components has been investigated and current injection into sensitive instrumentation nodes was minimized by careful floor-planning. The chip, the sensors, a magnetic induction-based transmitter and two silver oxide cells were packaged into a 36 mm × 12 mm capsule format. A base station was built in order to retrieve the data from the microsystem in real-time. The base station was designed to be adaptive and timing tolerant since the microsystem design was simplified to reduce power consumption and size. The telemetry system was found to have a packet error rate of 10<sup>-</sup><sup>3</sup> using an asynchronous simplex link. Trials in animal carcasses were carried out to show that the transmitter was as effective as a conventional RF device whilst consuming less power

Analog/RF Circuit Design Techniques for Nanometerscale IC Technologies

CMOS evolution introduces several problems in analog design. Gate-leakage mismatch exceeds conventional matching tolerances requiring active cancellation techniques or alternative architectures. One strategy to deal with the use of lower supply voltages is to operate critical parts at higher supply voltages, by exploiting combinations of thin- and thick-oxide transistors. Alternatively, low voltage circuit techniques are successfully developed. In order to benefit from nanometer scale CMOS technology, more functionality is shifted to the digital domain, including parts of the RF circuits. At the same time, analog control for digital and digital control for analog emerges to deal with current and upcoming imperfections

A 10-Gb/s two-dimensional eye-opening monitor in 0.13-μm standard CMOS

An eye-opening monitor (EOM) architecture that can capture a two-dimensional (2-D) map of the eye diagram of a high-speed data signal has been developed. Two single-quadrant phase rotators and one digital-to-analog converter (DAC) are used to generate rectangular masks with variable sizes and aspect ratios. Each mask is overlapped with the received eye diagram and the number of signal transitions inside the mask is recorded as error. The combination of rectangular masks with the same error creates error contours that overall provide a 2-D map of the eye. The authors have implemented a prototype circuit in 0.13-μm standard CMOS technology that operates up to 12.5 Gb/s at 1.2-V supply. The EOM maps the input eye to a 2-D error diagram with up to 68-dB mask error dynamic range. The left and right halves of the eyes are monitored separately to capture horizontally asymmetric eyes. The chip consumes 330 mW and operates reliably with supply voltages as low as 1 V at 10 Gb/s. The authors also present a detailed analysis that verifies if the measurements are in good agreement with the expected results