Effects of varying laser trimming geometries on thin film resistors

Purpose - This paper studies the effects of varying laser trim patterns on several performance parameters of thin film resistors such as the temperature coefficient of resistance (TCR) and target resistance value. Design/methodology/approach - The benefits and limitations of basic trim patterns are taken into consideration and the plunge cut, double plunge cut and the curved L-cut were selected to be modelled and tested experimentally. A computer simulation of the laser trim patterns has been developed for the modelling process of the resistors. The influence of the trim length and resistor dimensions on the TCR performance and resistance value of the resistors is investigated. Findings - It is found that variation in trim length, within the range of 5 to 15 mm, can give significant increases in the TCR of the thin films. Thus, for the plunge TCR cut can reach up to 11.51 ppm/oC, for the double plunge cut up to 14.34 ppm/oC and for the curved L-cut up to 5.11 ppm/oC. Originality/value – Research on the effects of various laser trimming geometries on the TCR and target resistance accuracy is limited, especially for patterns such as the curved L-cut,which is investigated in this paper

An Implantable Low Pressure, Low Drift, Dual BioPressure Sensor and In-Vivo Calibration Methods Thereof

The human body’s intracranial pressure (ICP) is a critical component in sustaining healthy blood flow to the brain while allowing adequate volume for brain tissue within the rigid structures of the cranium. Disruptions in the body’s autoregulation of intracranial pressure are often caused by hemorrhage, tumors, edema, or excess cerebral spinal fluid resulting in treatments that are estimated to globally cost up to approximately five billion dollars annually. A critical element in the contemporary management of acute head injury, intracranial hemorrhage, stroke, or other conditions resulting in intracranial hypertension, is the real-time monitoring of ICP. Currently, such mainstream clinical monitoring can only take place short-term within an acute care hospital. The monitoring is prone to measurement drift and is comprised of externally tethered pressure sensors that are temporarily implanted into the brain, thus carrying a significant risk of infection. To date, reliable, low drift, completely internalized, long-term ICP monitoring devices remain elusive. The successful development of such a device would not only be safer and more reliable in the short-term but would expand the use of ICP monitoring for the management of chronic intracranial hypertension and enable further clinical research into these disorders. The research herein reviews the current challenges of existing ICP monitoring systems, develops a new novel sensing technology, and evaluates the same for potentially facilitating long-term implantable ICP sensing. Based upon the findings of this research, this dissertation proposes and evaluates a dual matched-die piezo-resistive strain sensing device, with a novel in-vivo calibration system and method thereof, for application to long-term implantable ICP sensing

Aeronautical engineering: A continuing bibliography with indexes, supplement 100

This bibliography lists 295 reports, articles, and other documents introduced into the NASA Scientific and Technical Information System in August 1978

Aeronautical Engineering. A continuing bibliography with indexes, supplement 136, June 1981

This bibliography lists 424 reports, articles, and other documents introduced into the NASA scientific and technical information system in May 1981

Aeronautical engineering: A continuing bibliography with indexes (supplement 219)

This bibliography lists 586 reports, articles, and other documents introduced into the NASA scientific and technical information system in October, 1987

NASA Tech Briefs Index, 1977, volume 2, numbers 1-4

Announcements of new technology derived from the research and development activities of NASA are presented. Abstracts, and indexes for subject, personal author, originating center, and Tech Brief number are presented for 1977

Cutting Edge Nanotechnology

The main purpose of this book is to describe important issues in various types of devices ranging from conventional transistors (opening chapters of the book) to molecular electronic devices whose fabrication and operation is discussed in the last few chapters of the book. As such, this book can serve as a guide for identifications of important areas of research in micro, nano and molecular electronics. We deeply acknowledge valuable contributions that each of the authors made in writing these excellent chapters

A Digital Manufacturing Process For Three-Dimensional Electronics

Additive manufacturing (AM) offers the ability to produce devices with a degree of three-dimensional complexity and mass customisation previously unachievable with subtractive and formative approaches. These benefits have not transitioned into the production of commercial electronics that still rely on planar, template-driven manufacturing, which prevents them from being tailored to the end user or exploiting conformal circuitry for miniaturisation. Research into the AM fabrication of 3D electronics has been demonstrated; however, because of material restrictions, the durability and electrical conductivity of such devices was often limited. This thesis presents a novel manufacturing approach that hybridises the AM of polyetherimide (PEI) with chemical modification and selective light-based synthesis of silver nanoparticles to produce 3D electronic systems. The resulting nanoparticles act as a seed site for the electroless deposition of copper. The use of high-performance materials for both the conductive and dielectric elements created devices with the performance required for real-world applications. For printing PEI, a low-cost fused filament fabrication (FFF); also known as fused deposition modelling (FDM), printer with a unique inverted design was developed. The orientation of the printer traps hot air within a heated build environment that is open on its underside allowing the print head to deposit the polymer while keeping the sensitive components outside. The maximum achievable temperature was 120 °C and was found to reduce the degree of warping and the ultimate tensile strength of printed parts. The dimensional accuracy was, on average, within 0.05 mm of a benchmark printer and fine control over the layer thickness led to the discovery of flexible substrates that can be directly integrated into rigid parts. Chemical modification of the printed PEI was used to embed ionic silver into the polymer chain, sensitising it to patterning with a 405 nm laser. The rig used for patterning was a re-purposed vat-photopolymerisation printer that uses a galvanometer to guide the beam that is focused to a spot size of 155 µm at the focal plane. The positioning of the laser spot was controlled with an open-sourced version of the printers slicing software. The optimal laser patterning parameters were experimentally validated and a link between area-related energy density and the quality of the copper deposition was found. In tests where samples were exposed to more than 2.55 J/cm^2, degradation of the polymer was experienced which produced blistering and delamination of the copper. Less than 2.34 J/cm^2 also had negative effect and resulted in incomplete coverage of the patterned area. The minimum feature resolution produced by the patterning setup was 301 µm; however, tests with a photomask demonstrated features an order of magnitude smaller. The non-contact approach was also used to produce conformal patterns over sloped and curved surfaces. Characterisation of the copper deposits found an average thickness of 559 nm and a conductivity of 3.81 × 107 S/m. Tape peel and bend fatigue testing showed that the copper was ductile and adhered well to the PEI, with flexible electronic samples demonstrating over 50,000 cycles at a minimum bend radius of 6.59 mm without failure. Additionally, the PEI and copper combination was shown to survive a solder reflow with peak temperatures of 249°C. Using a robotic pick and place system a test board was automatically populated with surface mount components as small as 0201 resistors which were affixed using high-temperature, Type-V Tin-Silver-Copper solder paste. Finally, to prove the process a range of functional demonstrators were built and evaluated. These included a functional timer circuit, inductive wireless power coils compatible with two existing standards, a cylindrical RF antenna capable of operating at several frequencies below 10 GHz, flexible positional sensors, and multi-mode shape memory alloy actuators

ICP Etching of Silicon for Micro and Nanoscale Devices

The physical structuring of silicon is one of the cornerstones of modern microelectronics and integrated circuits. Typical structuring of silicon requires generating a plasma to chemically or physically etch silicon. Although many tools have been created to do this, the most finely honed tool is the Inductively Couple Plasma Reactive Ion Etcher. This tool has the ability to finesse structures from silicon unachievable on other machines. Extracting structures such as high aspect ratio silicon nanowires requires more than just this tool, however. It requires etch masks which can adequately protect the silicon without interacting with the etching plasma and highly tuned etch chemistry able to protect the silicon structures during the etching process. In the work presented here, three highly tuned etches for silicon, and its oxide, will be described in detail. The etches presented utilize a type of etch chemistry which provides passivation while simultaneously etching, thus permitting silicon structures previously unattainable. To cover the range of applications, one etch is tuned for deep reactive ion etching of high aspect ratio micro-structures in silicon, while another is tuned for high aspect ratio nanoscale structures. The third etch described is tuned for creating structures in silicon dioxide. Following the description of these etches, two etch masks for silicon will be described. The first mask will detail a highly selective etch mask uniquely capable of protecting silicon for both etches described while being compatible with mainstream semiconductor fabrication facilities. This mask is aluminum oxide. The second mask detailed permits for a completely dry lithography on the micro and nanoscale, FIB implanted Ga etch masks. The third chapter will describe the fabrication and in situ electrical testing of silicon nanowires and nanopillars created using the methods previously described. A unique method for contacting these nanowires is also described which has enabled investigation into the world of nanoelectronics. The fourth and final chapter will detail the design and construction of high magnetic fields and integrated planar microcoils, work which was enabled by the etching detailed here. This research was directed towards creation of a portable NMR machine.</p