Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

Semiconductor technology program: Progress briefs

Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon

Epitaxial designs for maximizing efficiency in resonant tunnelling diode based terahertz emitters

We discuss the modelling of high current density InGaAs/AlAs/InP resonant tunneling diodes to maximize their efficiency as THz emitters. A figure of merit which contributes to the wall plug efficiency, the intrinsic resonator efficiency, is used for the development of epitaxial designs. With the contribution of key parameters identified, we analyze the limitations of accumulated stress to assess the manufacturability of such designs. Optimal epitaxial designs are revealed, utilizing thin barriers, with a wide and shallow quantum well that satisfies the strained layer epitaxy constraint. We then assess the advantages to epitaxial perfection and electrical characteristics provided by devices with a narrow InAs sub-well inside a lattice-matched InGaAs alloy. These new structures will assist in the realization of the next-generation submillimeter emitters

Enabling electronic prognostics using thermal data

Prognostics is a process of assessing the extent of deviation or degradation of a product from its expected normal operating condition, and then, based on continuous monitoring, predicting the future reliability of the product. By being able to determine when a product will fail, procedures can be developed to provide advanced warning of failures, optimize maintenance, reduce life cycle costs, and improve the design, qualification and logistical support of fielded and future systems. In the case of electronics, the reliability is often influenced by thermal loads, in the form of steady-state temperatures, power cycles, temperature gradients, ramp rates, and dwell times. If one can continuously monitor the thermal loads, in-situ, this data can be used in conjunction with precursor reasoning algorithms and stress-and-damage models to enable prognostics. This paper discusses approaches to enable electronic prognostics and provides a case study of prognostics using thermal data.Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions

Radiation-Induced Error Criticality in Modern HPC Parallel Accelerators

In this paper, we evaluate the error criticality of radiation-induced errors on modern High-Performance Computing (HPC) accelerators (Intel Xeon Phi and NVIDIA K40) through a dedicated set of metrics. We show that, as long as imprecise computing is concerned, the simple mismatch detection is not sufficient to evaluate and compare the radiation sensitivity of HPC devices and algorithms. Our analysis quantifies and qualifies radiation effects on applications’ output correlating the number of corrupted elements with their spatial locality. Also, we provide the mean relative error (dataset-wise) to evaluate radiation-induced error magnitude. We apply the selected metrics to experimental results obtained in various radiation test campaigns for a total of more than 400 hours of beam time per device. The amount of data we gathered allows us to evaluate the error criticality of a representative set of algorithms from HPC suites. Additionally, based on the characteristics of the tested algorithms, we draw generic reliability conclusions for broader classes of codes. We show that arithmetic operations are less critical for the K40, while Xeon Phi is more reliable when executing particles interactions solved through Finite Difference Methods. Finally, iterative stencil operations seem the most reliable on both architectures.This work was supported by the STIC-AmSud/CAPES scientific cooperation program under the EnergySFE research project grant 99999.007556/2015-02, EU H2020 Programme, and MCTI/RNP-Brazil under the HPC4E Project, grant agreement n° 689772. Tested K40 boards were donated thanks to Steve Keckler, Timothy Tsai, and Siva Hari from NVIDIA.Postprint (author's final draft

Finite Element Method Modeling Of Advanced Electronic Devices

In this dissertation, we use finite element method together with other numerical techniques to study advanced electron devices. We study the radiation properties in electron waveguide structure with multi-step discontinuities and soft wall lateral confinement. Radiation mechanism and conditions are examined by numerical simulation of dispersion relations and transport properties. The study of geometry variations shows its significant impact on the radiation intensity and direction. In particular, the periodic corrugation structure exhibits strong directional radiation. This interesting feature may be useful to design a nano-scale transmitter, a communication device for future nano-scale system. Non-quasi-static effects in AC characteristics of carbon nanotube field-effect transistors are examined by solving a full time-dependent, open-boundary Schrödinger equation. The non-quasi-static characteristics, such as the finite channel charging time, and the dependence of small signal transconductance and gate capacitance on the frequency, are explored. The validity of the widely used quasi-static approximation is examined. The results show that the quasi-static approximation overestimates the transconductance and gate capacitance at high frequencies, but gives a more accurate value for the intrinsic cut-off frequency over a wide range of bias conditions. The influence of metal interconnect resistance on the performance of vertical and lateral power MOSFETs is studied. Vertical MOSFETs in a D2PAK and DirectFET package, and lateral MOSFETs in power IC and flip chip are investigated as the case studies. The impact of various layout patterns and material properties on RDS(on) will provide useful guidelines for practical vertical and lateral power MOSFETs design

NASA SBIR abstracts of 1990 phase 1 projects

The research objectives of the 280 projects placed under contract in the National Aeronautics and Space Administration (NASA) 1990 Small Business Innovation Research (SBIR) Phase 1 program are described. The basic document consists of edited, non-proprietary abstracts of the winning proposals submitted by small businesses in response to NASA's 1990 SBIR Phase 1 Program Solicitation. The abstracts are presented under the 15 technical topics within which Phase 1 proposals were solicited. Each project was assigned a sequential identifying number from 001 to 280, in order of its appearance in the body of the report. The document also includes Appendixes to provide additional information about the SBIR program and permit cross-reference in the 1990 Phase 1 projects by company name, location by state, principal investigator, NASA field center responsible for management of each project, and NASA contract number