102 research outputs found

    Caractérisation électrique et modélisation des transistors FDSOI sub-22nm

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    Silicon on insulator (SOI) transistors are among the best candidates for sub-22nm technology nodes. At this scale, the devices integrate extremely thin buried oxide layers (BOX) and body. They also integrate advanced high-k dielectric / metal gate stacks and strain engineering is used to improve transport properties with, for instance, the use of SiGe alloys in the channel of p-type MOS transistors. The optimization of such a technology requires precise and non-destructive experimental techniques able to provide information about the quality of electron transport and interface quality, as well as about the real values of physical parameters (dimensions and doping level) at the end of the process. Techniques for parameter extraction from electrical characteristics have been developed over time. The aim of this thesis work is to reconsider these methods and to further develop them to account for the extremely small dimensions used for sub-22nm SOI generations. The work is based on extended characterization and modelling in support. Among the original results obtained during this thesis, special notice should be put on the adaptation of the complete split CV method which is now able to extract the characteristic parameters for the entire stack, from the substrate and its doping level to the gate stack, as well as an extremely detailed analysis of electron transport based on low temperature characterization in back-gate electrostatic coupling conditions or the exploitation of channel magnetoresistance from the linear regime of operation to saturation. Finally, a detailed analysis of low-frequency noise closes this study.Parmi les architectures candidates pour les générations sub-22nm figurent les transistors sur silicium sur isolant (SOI). A cette échelle, les composants doivent intégrer des films isolants enterrés (BOX) et des canaux de conduction (Body) ultra-minces. A ceci s'ajoute l'utilisation d'empilements de grille avancés (diélectriques à haute permittivité / métal de grille) et une ingénierie de la contrainte mécanique avec l'utilisation d'alliages SiGe pour le canal des transistors de type P. La mise au point d'une telle technologie demande qu'on soit capable d'extraire de façon non destructive et avec précision la qualité du transport électronique et des interfaces, ainsi que les valeurs des paramètres physiques (dimensions et dopages), qui sont obtenues effectivement en fin de fabrication. Des techniques d'extraction de paramètres ont été développées au cours du temps. L'objectif de cette thèse est de reconsidérer et de faire évoluer ces techniques pour les adapter aux épaisseurs extrêmement réduites des composants étudiés. Elle combine mesures approfondies et modélisation en support. Parmi les résultats originaux obtenus au cours de cette thèse, citons notamment l'adaptation de la méthode split CV complète qui permet désormais d'extraire les paramètres caractérisant l'ensemble de l'empilement SOI, depuis le substrat et son dopage jusqu'à la grille, ainsi qu'une analyse extrêmement détaillée du transport grâce à des mesures en régime de couplage grille arrière à température variable ou l'exploitation de la magnétorésistance de canal depuis le régime linéaire jusqu'en saturation. Le mémoire se termine par une analyse détaillée du bruit basse fréquence

    Reliability Investigations of MOSFETs using RF Small Signal Characterization

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    Modern technology needs and advancements have introduced various new concepts such as Internet-of-Things, electric automotive, and Artificial intelligence. This implies an increased activity in the electronics domain of analog and high frequency. Silicon devices have emerged as a cost-effective solution for such diverse applications. As these silicon devices are pushed towards higher performance, there is a continuous need to improve fabrication, power efficiency, variability, and reliability. Often, a direct trade-off of higher performance is observed in the reliability of semiconductor devices. The acceleration-based methodologies used for reliability assessment are the adequate time-saving solution for the lifetime's extrapolation but come with uncertainty in accuracy. Thus, the efforts to improve the accuracy of reliability characterization methodologies run in parallel. This study highlights two goals that can be achieved by incorporating high-frequency characterization into the reliability characteristics. The first one is assessing high-frequency performance throughout the device's lifetime to facilitate an accurate description of device/circuit functionality for high-frequency applications. Secondly, to explore the potential of high-frequency characterization as the means of scanning reliability effects within devices. S-parameters served as the high-frequency device's response and mapped onto a small-signal model to analyze different components of a fully depleted silicon-on-insulator MOSFET. The studied devices are subjected to two important DC stress patterns, i.e., Bias temperature instability stress and hot carrier stress. The hot carrier stress, which inherently suffers from the self-heating effect, resulted in the transistor's geometry-dependent magnitudes of hot carrier degradation. It is shown that the incorporation of the thermal resistance model is mandatory for the investigation of hot carrier degradation. The property of direct translation of small-signal parameter degradation to DC parameter degradation is used to develop a new S-parameter based bias temperature instability characterization methodology. The changes in gate-related small-signal capacitances after hot carrier stress reveals a distinct signature due to local change of flat-band voltage. The measured effects of gate-related small-signal capacitances post-stress are validated through transient physics-based simulations in Sentaurus TCAD.:Abstract Symbols Acronyms 1 Introduction 2 Fundamentals 2.1 MOSFETs Scaling Trends and Challenges 2.1.1 Silicon on Insulator Technology 2.1.2 FDSOI Technology 2.2 Reliability of Semiconductor Devices 2.3 RF Reliability 2.4 MOSFET Degradation Mechanisms 2.4.1 Hot Carrier Degradation 2.4.2 Bias Temperature Instability 2.5 Self-heating 3 RF Characterization of fully-depleted Silicon on Insulator devices 3.1 Scattering Parameters 3.2 S-parameters Measurement Flow 3.2.1 Calibration 3.2.2 De-embedding 3.3 Small-Signal Model 3.3.1 Model Parameters Extraction 3.3.2 Transistor Figures of Merit 3.4 Characterization Results 4 Self-heating assessment in Multi-finger Devices 4.1 Self-heating Characterization Methodology 4.1.1 Output Conductance Frequency dependence 4.1.2 Temperature dependence of Drain Current 4.2 Thermal Resistance Behavior 4.2.1 Thermal Resistance Scaling with number of fingers 4.2.2 Thermal Resistance Scaling with finger spacing 4.2.3 Thermal Resistance Scaling with GateWidth 4.2.4 Thermal Resistance Scaling with Gate length 4.3 Thermal Resistance Model 4.4 Design for Thermal Resistance Optimization 5 Bias Temperature Instability Investigation 5.1 Impact of Bias Temperature Instability stress on Device Metrics 5.1.1 Experimental Details 5.1.2 DC Parameters Drift 5.1.3 RF Small-Signal Parameters Drift 5.2 S-parameter based on-the-fly Bias Temperature Instability Characterization Method 5.2.1 Measurement Methodology 5.2.2 Results and Discussion 6 Investigation of Hot-carrier Degradation 6.1 Impact of Hot-carrier stress on Device performance 6.1.1 DC Metrics Degradation 6.1.2 Impact on small-signal Parameters 6.2 Implications of Self-heating on Hot-carrier Degradation in n-MOSFETs 6.2.1 Inclusion of Thermal resistance in Hot-carrier Degradation modeling 6.2.2 Convolution of Bias Temperature Instability component in Hot-carrier Degradation 6.2.3 Effect of Source and Drain Placement in Multi-finger Layout 6.3 Vth turn-around effect in p-MOSFET 7 Deconvolution of Hot-carrier Degradation and Bias Temperature Instability using Scattering parameters 7.1 Small-Signal Parameter Signatures for Hot-carrier Degradation and Bias Temperature Instability 7.2 TCAD Dynamic Simulation of Defects 7.2.1 Fixed Charges 7.2.2 Interface Traps near Gate 7.2.3 Interface Traps near Spacer Region 7.2.4 Combination of Traps 7.2.5 Drain Series Resistance effect 7.2.6 DVth Correction 7.3 Empirical Modeling based deconvolution of Hot-carrier Degradation 8 Conclusion and Recommendations 8.1 General Conclusions 8.2 Recommendations for Future Work A Directly measured S-parameters and extracted Y-parameters B Device Dimensions for Thermal Resistance Modeling C Frequency response of hot-carrier degradation (HCD) D Localization Effect of Interface Traps Bibliograph

    Low-Temperature Technologies and Applications

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    This book on low-temperature technology is a notable collection of different aspects of the technology and its application in varieties of research and practical engineering fields. It contains, sterilization and preservation techniques and their engineering and scientific characteristics. Ultra-low temperature refrigeration, the refrigerants, applications, and economic aspects are highlighted in this issue. The readers will find the low temperature, and vacuum systems for industrial applications. This book has given attention to global energy resources, conservation of energy, and alternative sources of energy for the application of low-temperature technologies

    Strain integration and performance optimization in sub-20nm FDSOI CMOS technology

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    La technologie CMOS à base de Silicium complètement déserté sur isolant (FDSOI) est considérée comme une option privilégiée pour les applications à faible consommation telles que les applications mobiles ou les objets connectés. Elle doit cela à son architecture garantissant un excellent comportement électrostatique des transistors ainsi qu'à l'intégration de canaux contraints améliorant la mobilité des porteurs. Ce travail de thèse explore des solutions innovantes en FDSOI pour nœuds 20nm et en deçà, comprenant l'ingénierie de la contrainte mécanique à travers des études sur les matériaux, les dispositifs, les procédés d'intégration et les dessins des circuits. Des simulations mécaniques, caractérisations physiques (µRaman), et intégrations expérimentales de canaux contraints (sSOI, SiGe) ou de procédés générant de la contrainte (nitrure, fluage de l'oxyde enterré) nous permettent d'apporter des recommandations pour la technologie et le dessin physique des transistors en FDSOI. Dans ce travail de thèse, nous avons étudié le transport dans les dispositifs à canal court, ce qui nous a amené à proposer une méthode originale pour extraire simultanément la mobilité des porteurs et la résistance d'accès. Nous mettons ainsi en évidence la sensibilité de la résistance d'accès à la contrainte que ce soit pour des transistors FDSOI ou nanofils. Nous mettons en évidence et modélisons la relaxation de la contrainte dans le SiGe apparaissant lors de la gravure des motifs et causant des effets géométriques (LLE) dans les technologies FDSOI avancées. Nous proposons des solutions de type dessin ainsi que des solutions technologiques afin d'améliorer la performance des cellules standard digitales et de mémoire vive statique (SRAM). En particulier, nous démontrons l'efficacité d'une isolation duale pour la gestion de la contrainte et l'extension de la capacité de polarisation arrière, qui un atout majeur de la technologie FDSOI. Enfin, la technologie 3D séquentielle rend possible la polarisation arrière en régime dynamique, à travers une co-optimisation dessin/technologie (DTCO).The Ultra-Thin Body and Buried oxide Fully Depleted Silicon On Insulator (UTBB FDSOI) CMOS technology has been demonstrated to be highly efficient for low power and low leakage applications such as mobile, internet of things or wearable. This is mainly due to the excellent electrostatics in the transistor and the successful integration of strained channel as a carrier mobility booster. This work explores scaling solutions of FDSOI for sub-20nm nodes, including innovative strain engineering, relying on material, device, process integration and circuit design layout studies. Thanks to mechanical simulations, physical characterizations and experimental integration of strained channels (sSOI, SiGe) and local stressors (nitride, oxide creeping, SiGe source/drain) into FDSOI CMOS transistors, we provide guidelines for technology and physical circuit design. In this PhD, we have in-depth studied the carrier transport in short devices, leading us to propose an original method to extract simultaneously the carrier mobility and the access resistance and to clearly evidence and extract the strain sensitivity of the access resistance, not only in FDSOI but also in strained nanowire transistors. Most of all, we evidence and model the patterning-induced SiGe strain relaxation, which is responsible for electrical Local Layout Effects (LLE) in advanced FDSOI transistors. Taking into account these geometrical effects observed at the nano-scale, we propose design and technology solutions to enhance Static Random Access Memory (SRAM) and digital standard cells performance and especially an original dual active isolation integration. Such a solution is not only stress-friendly but can also extend the powerful back-bias capability, which is a key differentiating feature of FDSOI. Eventually the 3D monolithic integration can also leverage planar Fully-Depleted devices by enabling dynamic back-bias owing to a Design/Technology Co-Optimization

    Optimisation du procédé de réalisation pour l'intégration séquentielle 3D des transistors CMOS FDSOI

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    L activation à basse température est prometteuse pour l intégration 3D séquentielle où lebudget thermique du transistor supérieur est limité (<650 C) pour ne pas dégrader letransistor inférieur, mais aussi dans le cas d une intégration planaire afin d atteindre des EOTultra fines et de contrôler le travail de sortie de la grille sans recourir à une intégration de type gate-last . Dans ce travail, l activation par recroissance en phase solide (SPER) a étéétudiée afin de réduire le budget thermique de l activation des dopants.L activation à basse température présente plusieurs inconvénients. Les travauxprécédents montrent que les fuites de jonctions sont plus importantes dans ces dispositifs.Ensuite, des fortes désactivations de dopants ont été observées. Troisièmement, la faiblediffusion des dopants rend difficile la connexion des jonctions source et drain avec le canal.Dans ce travail, il est montré que dans un transistor FDSOI, l augmentation des fuites dejonctions et la désactivation du Bore peuvent être évités grâce à la présence de l oxyde enterré.De plus les conditions d implantation ont été optimisées et les transistors activés à650 C atteignent les performances des transistors de référence.Low temperature (LT) process is gaining interest in the frame of 3D sequentialintegration where limited thermal budget (<650 C) is needed for top FET to preserve bottomFET from any degradation and also in the standard planar integration for achieving ultra-thinEOT and work function control with high-k metal gate without gate-last integration scheme.In this work, LT Solid Phase Epitaxial Regrowth (SPER) has been investigated for reducingthe most critical thermal budget which is dopant activation.From previous works, LT activated devices face several challenges: First, higher junctionleakage limits their application to high performance devices. Secondly, strong deactivation ofthe metastable activated dopants was observed with post anneals. Thirdly, the dopant weakdiffusion makes it difficult to connect the channel with S/D.In this work, it is shown that the use of FDSOI enables to overcome junction leakage andBoron deactivation issues thanks to the defect cutting off and sinking effect of buried oxide.As a consequence, dopant deactivation in FDSOI devices is no longer an issue. Finally,implants conditions of LT transistors have been optimized to reach similar performance thanits standard high temperature counterparts.SAVOIE-SCD - Bib.électronique (730659901) / SudocGRENOBLE1/INP-Bib.électronique (384210012) / SudocGRENOBLE2/3-Bib.électronique (384219901) / SudocSudocFranceF

    Low Temperature Characterization and Modeling of FDSOI Transistors for Cryo CMOS Applications

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    The wide range of cryogenic applications, such as spatial, high performance computing or high-energy physics, has boosted the investigation of CMOS technology performance down to cryogenic temperatures. In particular, the readout electronics of quantum computers operating at low temperature requires larger bandwidth than spatial applications, so that advanced CMOS node has to be considered. FDSOI technology appears as a valuable solution for co-integration between qubits and consistent engineering of control and read-out. However, there is still lack of reports on literature concerning advanced CMOS nodes behavior at deep cryogenic operation, from devices electrostatics to mismatch and self-heating, all requested for the development of robust design tools. For these reasons, this chapter presents a review of electrical characterization and modeling results recently obtained on ultra-thin film FDSOI MOSFETs down to 4.2 K

    Characterizationof FD-SOI transistor

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    In this project, measurements have been made on FD-SOI transistors, fabricated by CEA-LETI, to carry out a characterization of these devices, since they are very new and need to be studied. This work has focused on characterizing the aging mechanism of the devices and the observed RTN. To characterize the aging mechanism and variability of the samples based on the applied cycles, the measurements have been made by applying constant stress voltages (CVS) directly to the device with a wafer prove station and a semiconductor parameter analyzer (SPA). To observe TN, different electrical procedures have been studied, controlling the different parameters during the measurements.En aquest projecte s'han realitzat mesures en transistors FD-SOI, fabricats per CEA-LETI, per tal de dur a terme una caracterització d'aquests dispositius, ja que són molt nous i necessiten de ser estudiats. Aquest treball s'ha centrat en caracteritzar l'envelliment dels dispositius i el RTN observat. Per a caracteritzar l'envelliment i la variabilitat de les mostres en funció dels cicles aplicats, les mesures s'han realitzat aplicant tensions d'estrés constant (CVS) directament al dispositiu amb una taula de puntes i un analitzador de paràmetres de semiconductors (SPA). Per tal d'observar RTN s'han estudiat diferents procediments elèctrics, controlant els diferents paràmetres durant les mesures.En este proyecto se han realizado medidas en transistores FD-SOI, fabricados por CEA-LETI, para llevar a cabo una caracterización de estos dispositivos, puesto que son muy nuevos y necesitan de ser estudiados. Este trabajo se ha centrado en caracterizar los mecanismos de envejecimiento de los dispositivos y el RTN observado. Para caracterizar el envejecimiento y la variabilidad de las muestras en función de los ciclos aplicados, las medidas se han realizado aplicando tensiones de estrés constante (CVS) directamente al dispositivo con una tabla de puntas y un analizador de parámetros de semiconductores (SPA). Para observar RTN se han estudiado diferentes procedimientos eléctricos, controlando los diferentes parámetros durante las medidas

    Optimisation des jonctions de dispositifs (FDSOI, TriGate) fabriqués à faible température pour l’intégration 3D séquentielle

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    3D sequential integration is a promising candidate for the scaling sustainability for technological nodes beyond 14 nm. The main challenge is the development of a low temperature process for the top transistor level that enables to avoid the degradation of the bottom transistor level. The most critical process step for the top transistor level fabrication is the dopant activation that is usually performed at temperature higher than 1000 °C. In the frame of this Ph.D. work, different solutions for the dopant activation optimization at low temperature (below 600 °C) are proposed and integrated in FDSOI and TriGate devices. The technique chosen for the dopant activation at low temperature is the solid phase epitaxial regrowth. First, doping conditions have been optimized in terms of activation level and process time for low temperatures (down to 450 °C) anneals. The obtained conditions have been implemented in FDSOI and TriGate devices leading to degraded electrical results compared to the high temperature process of reference (above 1000 °C). By means of TCAD simulation and electrical measurements comparison, the critical region of the transistor in terms of activation appears to be below the offset spacer. The extension first integration scheme is then shown to be the best candidate to obtain high performance low temperature devices. Indeed, by performing the doping implantation before the raised source and drain epitaxial growth, the absence of diffusion at low temperature can be compensated. This conclusion can be extrapolated for TriGate and FinFET on insulator devices. Extension first integration scheme has been demonstrated for the first time on N and PFETs in 14 nm FDSOI technology showing promising results in terms of performance. This demonstration evidences that the two challenges of this integration i.e. the partial amorphization of very thin films and the epitaxy regrowth on implanted access are feasible. Finally, heated implantation has been investigated as a solution to dope thin access regions without full amorphization, which is particularly critical for FDSOI and FinFET devices. The as-implanted activation levels are shown to be too low to obtain high performance devices and the heated implantation appears a promising candidate for low temperature devices if used in combination with an alternative activation mechanism.L’intégration 3D séquentielle représente une alternative potentielle à la réduction des dimensions afin de gagner encore en densité d’une génération à la suivante. Le principal défi concerne la fabrication du transistor de l’étage supérieur avec un faible budget thermique; ceci afin d’éviter la dégradation du niveau inférieur. L’étape de fabrication la plus critique pour la réalisation du niveau supérieur est l’activation des dopants. Celle-ci est généralement effectuée par recuit à une température supérieure à 1000 °C. Dans ce contexte, cette thèse propose des solutions pour activer les dopants à des températures inférieures à 600 °C par la technique dite de recristallisation en phase solide. Les conditions de dopage ont été optimisées pour améliorer le niveau d’activation et le temps de recuit tout en réduisant la température d’activation jusqu’à 450°C. Les avancées obtenues ont été implémentées sur des dispositifs avancés FDSOI et TriGate générant des dispositifs avec des performances inférieures aux références fabriquées à hautes températures (supérieures à 1000 °C). En utilisant des simulations TCAD et en les comparant aux mesures électriques, nous avons montré que la région la plus critique en termes d’activation se trouve sous les espaceurs de la grille. Nous montrons alors qu’une intégration dite « extension first » est le meilleur compromis pour obtenir de bonnes performances sur des dispositifs fabriqués à faible température. En effet, l’implantation des dopants avant l’épitaxie qui vise à surélever les sources et drains compense l’absence de diffusion à basse température. Ces résultats ont par la suite été étendus pour des dispositifs TriGate et FinFETs sur isolants. Pour la première fois, l’intégration « extension first » a été démontrée pour des N et PFETs d’une technologie 14 nm FDSOI avec des résultats prometteurs en termes de performances. Les résultats obtenus montrent notamment qu’il est possible d’amorphiser partiellement un film très mince avant d’effectuer une recroissance épitaxiale sur une couche dopée. Finalement, une implantation ionique à relativement haute température (jusqu’à 500 °C) a été étudiée afin de doper les accès sans amorphiser totalement le film mince, ce qui est critique dans le cas des dispositifs FDSOI et FinFET. Nous montrons que les niveaux d’activation après implantation sont trop faibles pour obtenir des bonnes performances et que l’implantation ionique « chaude » est prometteuse à condition d’être utilisée avec un autre mécanisme d’activation comme le recuit laser

    The effects of strain on carrier transport in thin and ultra-thin SOI MOSFETs

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    Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005.Includes bibliographical references (leaves 85-91).Thin-body MOSFET geometries such as fully-depleted SOI and double-gate devices are attractive because they can offer superior scaling properties compared to bulk and thick-body SOI devices. The electrostatics of a MOSFET limit how short of a gate length can be achieved before the gate loses control over the channel. In bulk-like devices, the device designer keeps the gate in control with gate oxide scaling and doping profile design. In thin-body geometries, silicon thickness is a new, powerful scaling parameter. Much like with gate oxide scaling, the electrostatics improve with thinner films. This means that the limits of scaling thin-body devices are closely tied with the limits of scaling silicon film thickness. Electrical transport appears to be one of the limiting factors for scaling body thickness. As the silicon film thickness is reduced into the ultra-thin regime, where the film is thinner than the bulk inversion layer thickness, quantum confinement effects begin to be observed. For the most part, these effects act to degrade mobility, reducing performance and making further scaling less rewarding. This work focuses on finding methods to maintain good mobility in ultra-thin silicon films. Thin and ultra-thin body relaxed SOI and biaxially strained SOI MOSFETs were constructed and measured with and without the application of mechanical uniaxial strain to examine the interaction between strain and thin-film effects.(cont.) The band splitting induced by the application of strain is found to at least partially mitigate the mechanisms responsible for degrading electron mobility in ultra-thin films. Additionally, the enhancement seen with uniaxial strain is found to further enhance mobility in biaxially strained films. Finally, the effective mass change caused by uniaxial strain is found to cause the mobility modulation to have a directional dependence, especially in already biaxially strained films.by Isaac Lauer.Ph.D

    D-Band downconversion mixer design in CMOS-SOI

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    Abstract. The current surge in research interest around the sub-THz frequency region comes as a no surprise. The potential for greater data rates and available bandwidths are just a couple reasons why research around these frequencies should be prioritized. Many viable receiver structures have been presented for these frequency regions, but they all have one thing in common: They all include a downconversion mixer. The mixer is a crucial piece in the receiver structure, converting the higher frequency radio frequency (RF) signal to a much lower intermediate frequency (IF) signal using multiplication with a local oscillator (LO) signal. The resulting waveform is much easier to handle for signal processing that comes after. The downconversion should be able to provide a fair amount of gain to the converted signal on a wide range of input signals, measured with the 1dB compression point. The noise figure is also a major consideration for RF-devices, but in the case of the mixer, its importance is not as prevalent as it is for the LNA that precedes it, since the noise of the mixer is attenuated by the gain of the previous stages. This master’s thesis work introduces the basic theory around downconversion mixers, followed by the design of a mixer from schematic level circuit design all the way to the physical layout. The physical design is done using 22nm FDSOI technology, provided by GlobalFoundries. The design is made for a direct conversion receiver using Gilbert cell topology, meaning image rejection is reasonable and depends only on the received signal itself, and good noise and feedthrough performance should be expected in simulations. The mixer is to downconvert a 151 GHz signal down to 0–1 GHz, using an LO signal between 150–151 GHz. Two iterations of the mixer are shown in the end results, the first one being based on the schematic design, and the second one with adjustments made for better performance. While driving a high impedance 500 Ohm load, the second iteration was able to reach a conversion gain of -10.0 dB with a 1dB compression point of 6.4 dBm while dissipating 4.7 mW of power. DSB noise figure was simulated to be 17.3 dB and the LO leakage to the IF output at -27.7 dBm.Alaspäin taajuusmuuntavan sekoittimen suunnittelu D-kaistalle käyttäen CMOS-SOI teknologiaa. Tiivistelmä. Nykyinen tutkimuksen keskittyminen millimetriaalto ja THz taajuusalueille ei tule kenellekään yllätyksenä. Suurempien datanopeuksien ja vapaiden taajuuskaistojen potentiaali ovat vain joitain monista hyvistä käytännön syistä, miksi tutkimusta näiden taajuuksien ympärillä priorisoidaan. Monia käytännöllisiä vastaanotinrakenteita on esitetty näille taajuusalueille ja niillä on kaikilla yksi yhteinen tekijä: tajuusmuunnin alemmille taajuuksille. Taajuusmuunnin eli sekoitin on olennainen osa vastaanotinrakenteita, muuntaen korkeamman radiotaajuuden (RF) matalammalle välitaajuudelle (IF) käyttäen taajuuksien sekoittamista paikallisoskillaattorilla (LO). Mikserin ulostulosignaali on signaalinprosessoinnin näkökulmasta paljon käytännöllisempi. Alaspäin taajuusmuuntavan mikserin tulee pystyä vahvistamaan laajaa skaalaa erivahvuisia signaaleja, minkä ylärajaa mittaamme 1 dB kompressiopisteellä. Radiolaitteistossa kohinaluku tulee yleensä myös ottaa huomioon, mutta johtuen mikserin sijainnista vastaanotinketjussa, kohinaluku vaimenee suhteessa sitä edeltävien vahvistuksien verran, eikä siksi ole niin kriittinen. Tämä diplomityö esittelee lukijalle ensiksi alaspäin muuntavan taajuussekoittimen perusteorian, toisena sen teoreettisen piirikaavion suunnittelun sekä sen simuloinnin tuloksia, ja viimeisenä fyysisen layoutin suunnittelun sekä sen simuloinnin tulokset. Fyysisen layoutin suunnittelu ja simulointi tehdään käyttäen GlobalFoundries 22nm FDSOI teknologiaa. Suunnittelu tehdään suoramuunnosvastaanottimelle käyttäen Gilbertin solu topologiaa, eliminoiden peilitaajuuksista aiheutuvat ongelmat, sekä vähentäen kohinan sekä ei-haluttujen signaalien läpivuotojen vaikutusta. Sekoittimen tulee muuntaa 151 GHz signaali n. 0–1 GHz kantataajuudelle käyttäen LO-signaalia taajuusvälillä 150–151 GHz. Lopullisissa tuloksissa vertaillaan kahta eri iteraatiota. Ensimmäisenä versiota, joka luotiin alun perin teoriapohjaisen piirisuunnittelun pohjalta, sekä toista versiota, missä useilla parannuksilla mikserin suorituskykyä saatiin parannettua. Korkeaimpedanssista 500 Ohmin kuormaa ajaessa mikseri ylsi -10.0 dB vahvistukseen, 1 dB kompressiopiste oli 6.4 dB kuluttaen 4.7 mW virtaa käytössä. Kohinaluvuksi simuloitiin 17.3 dB, sekä LO signaalin vuodosta IF lähtöön oli -27.7 dBm
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