1,874 research outputs found
Process Optimization and Downscaling of a Single Electron Single Dot Memory
This paper presents the process optimization of a single-electron nanoflash
electron memory. Self-aligned single dot memory structures have been fabricated
using a wet anisotropic oxidation of a silicon nanowire. One of the main issue
was to clarify the process conditions for the dot formation. Based on the
process modeling, the influence of various parameters (oxidation temperature,
nanowire shape) has been investigated. The necessity of a sharp compromise
between these different parameters to ensure the presence of the memory dot has
been established. In order to propose an aggressive memory cell, the
downscaling of the device has been carefully studied. Scaling rules show that
the size of the original device could be reduced by a factor of 2. This point
has been previously confirmed by the realization of single-electron memory
devices
Flash-memories in Space Applications: Trends and Challenges
Nowadays space applications are provided with a processing power absolutely overcoming the one available just a few years ago. Typical mission-critical space system applications include also the issue of solid-state recorder(s). Flash-memories are nonvolatile, shock-resistant and power-economic, but in turn have different drawbacks. A solid-state recorder for space applications should satisfy many different constraints especially because of the issues related to radiations: proper countermeasures are needed, together with EDAC and testing techniques in order to improve the dependability of the whole system. Different and quite often contrasting dimensions need to be explored during the design of a flash-memory based solid- state recorder. In particular, we shall explore the most important flash-memory design dimensions and trade-offs to tackle during the design of flash-based hard disks for space application
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