ACTIVE INDUCTOR BASED LOW PHASE NOISE VOLTAGE CONTROLLED OSCILLATOR

This paper proposed a fully MOS-based voltage-controlled oscillator (VCO) with tuning range and low phase noise, replacing the most often used NMOS-based inductor-capacitor tank arranged in cross-coupled topology with a high-Q active inductor. This study mainly focuses on VCO design using a MOS-based active inductor and is implemented and verified using UMC 180nm CMOS technology. The proposed VCO is resistorless and consists of an active inductor, two MOS capacitors, and the buffer circuits. The fundamental principle of this MOS-based VCO concept is to use MOS based inductor to replace the passive inductor, which is an active inductor that gives less area and low power usage. At 1 MHz frequency offset, the phase noise achieved by this proposed configuration is -102.78dBc/Hz. In the proposed VCO architecture, the frequency tuning range is 0.5GHz to 1.7GHz. This VCO design can accomplish this acceptable tuning range by altering the regulating voltage from 0.7V to 1.8V. This suggested architecture of proposed VCO design has the power consumption of 9mW with a 1.8V supply voltage. The suggested VCO has been shown to be a good fit for low-power RF circuit applications while preserving acceptable performance metrics

The Effect of DC Component on CMOS Injection-Coupled LC Quadrature Oscillator (IC-QO)

This paper creates a different insight to improve phase noise of Injection-Coupled quadrature oscillators (QOs). In fact, there are several phase noise functions and the important parameter is carrier power that considered here. The QO is analyzed and the mismatches between LC tanks that are the main proofs of phase error in this oscillator are shown. The main aim of this paper is focused on the reduction of phase noise by considering DC term. It is shown that the DC level which ignored in the most previous works is also important to improve phase noise by the carrier power. With due attention in the previous equations the phase noise can be reduced and the phase error can be cancelled or controlled by adjusting bias current. On the other hand as a result, is obtained that increasing of the drain current and the voltage of LC tank decrease the phase noise and the phase error simultaneously. To confirm the proposed idea and analysis, a 5.5 GHz QO is designed and simulated using 0.18µm TSMC CMOS technology. The simulation results show confirmation of the proposed idea

Wideband 0.18µm CMOS VCO Using Active Inductor with Negative Resistance

This paper presents a wideband voltage controlled oscillator topology based on an active inductor generating negative resistance. The proposed architecture covers a frequency band between 1.325 GHz - 2.15 GHz with average in-band phase noise of -86 dBc/Hz at 1 MHz offset from the carrier frequency. Power consumption of the oscillator core is 28 mW from a 1.8 V supply. The circuit has been simulated in Eldo RF (Design Architect IC, Mentor Graphics) using UMC 0.18 µm 1P6M Salicide RF CMOS model libraries

Wideband 0.18µm CMOS VCO Using Active Inductor with Negative Resistance

This paper presents a wideband voltage controlled oscillator topology based on an active inductor generating negative resistance. The proposed architecture covers a frequency band between 1.325 GHz - 2.15 GHz with average in-band phase noise of -86 dBc/Hz at 1 MHz offset from the carrier frequency. Power consumption of the oscillator core is 28 mW from a 1.8 V supply. The circuit has been simulated in Eldo RF (Design Architect IC, Mentor Graphics) using UMC 0.18 µm 1P6M Salicide RF CMOS model libraries

Self-Timed Rings: A Promising Solution for Generating High-Speed High Resolution Low-Phase Noise Clocks

International audienceA high-speed multi-phase oscillator based on self-timed ring is proposed. Self-timed rings (STR) are promising approach for designing high-speed serial links and clock generators. Indeed, the architecture of STR allows us to achieve high frequencies with multiphase outputs and their oscillation frequency is not only depending on the number of stages but also on the initial state of the ring. Moreover, this architecture allows us 3 dB phase noise reduction when, while keeping the same frequency, when the stage number is doubled. In this chapter, we propose a method to design STR able to generate high-speed multi-phase outputs and we suggest a design flow for designing low-phase noise self-timed ring oscillators. A test chip has been designed and fabricated in STMicroelectonics CMOS65nm technology to verify the theoretical claims and validate the simulation results

Design And Implementation Of Up-Conversion Mixer And Lc-Quadrature Oscillator For IEEE 802.11a WLAN Transmitter Application Utilizing 0.18 Pm CMOS Technology [TK7871.99.M44 H279 2008 f rb].

Perlumbaan implementasi litar terkamil radio, dengan kos yang rendah telah menggalakkan penggunaan teknologi CMOS. The drive for cost reduction has led to the use of CMOS technology for highly integrated radios

Circuits and Systems for On-Chip RF Chemical Sensors and RF FDD Duplexers

Integrating RF bio-chemical sensors and RF duplexers helps to reduce cost and area in the current applications. Furthermore, new applications can exist based on the large scale integration of these crucial blocks. This dissertation addresses the integration of RF bio-chemical sensors and RF duplexers by proposing these initiatives. A low power integrated LC-oscillator-based broadband dielectric spectroscopy (BDS) system is presented. The real relative permittivity ε’r is measured as a shift in the oscillator frequency using an on-chip frequency-to-digital converter (FDC). The imaginary relative permittivity ε”r increases the losses of the oscillator tank which mandates a higher dc biasing current to preserve the same oscillation amplitude. An amplitude-locked loop (ALL) is used to fix the amplitude and linearize the relation between the oscillator bias current and ε”r. The proposed BDS system employs a sensing oscillator and a reference oscillator where correlated double sampling (CDS) is used to mitigate the impact of flicker noise, temperature variations and frequency drifts. A prototype is implemented in 0.18 µm CMOS process with total chip area of 6.24 mm^2 to operate in 1-6 GHz range using three dual bands LC oscillators. The achieved standard deviation in the air is 2.1 ppm for frequency reading and 110 ppm for current reading. A tunable integrated electrical balanced duplexer (EBD) is presented as a compact alternative to multiple bulky SAW and BAW duplexers in 3G/4G cellular transceivers. A balancing network creates a replica of the transmitter signal for cancellation at the input of a single-ended low noise amplifier (LNA) to isolate the receive path from the transmitter. The proposed passive EBD is based on a cross-connected transformer topology without the need of any extra balun at the antenna side. The duplexer achieves around 50 dB TX-RX isolation within 1.6-2.2 GHz range up to 22 dBm. The cascaded noise figure of the duplexer and LNA is 6.5 dB, and TX insertion loss (TXIL) of the duplexer is about 3.2 dB. The duplexer and LNA are implemented in 0.18 µm CMOS process and occupy an active area of 0.35 mm^2