Gate capacitance of back-gated nanowire field-effect transistors

Gate capacitances of back-gated nanowire field-effect transistors (NW-FETs) are calculated by means of finite element methods and the results are compared with analytical results of the ``metallic cylinder on an infinite metal plate model''. Completely embedded and non-embedded NW-FETs are considered. It is shown that the use of the analytical expressions also for non-embedded NW-FETs gives carrier mobilities that are nearly two times too small. Furthermore, the electric field amplification of non-embedded NW-FETs and the influence of the cross-section shape of the nanowires are discussed.Comment: 4 pages, 5 figures, to be published in Appl. Phys. Let

Broadband Quantum Efficiency Enhancement in High Index Nanowires Resonators

Light trapping in sub-wavelength semiconductor nanowires (NWs) offers a promising approach to simultaneously reducing material consumption and enhancing photovoltaic performance. Nevertheless, the absorption efficiency of a NW, defined by the ratio of optical absorption cross section to the NW diameter, lingers around 1 in existing NW photonic devices, and the absorption enhancement suffers from a narrow spectral width. Here, we show that the absorption efficiency can be significantly improved in NWs with higher refractive indices, by an experimental observation of up to 350% external quantum efficiency (EQE) in lead sulfide (PbS) NW resonators, a 3-fold increase compared to Si NWs. Furthermore, broadband absorption enhancement is achieved in single tapered NWs, where light of various wavelengths is absorbed at segments with different diameters analogous to a tandem solar cell. Overall, the single NW Schottky junction solar cells benefit from optical resonance, near bandgap open circuit voltage, and long minority carrier diffusion length, demonstrating power conversion efficiency (PCE) comparable to single Si NW coaxial p-n junction cells11, but with much simpler fabrication processes