Aging-Aware Design Methods for Reliable Analog Integrated Circuits using Operating Point-Dependent Degradation

The focus of this thesis is on the development and implementation of aging-aware design methods, which are suitable to satisfy current needs of analog circuit design. Based on the well known \gm/\ID sizing methodology, an innovative tool-assisted aging-aware design approach is proposed, which is able to estimate shifts in circuit characteristics using mostly hand calculation schemes. The developed concept of an operating point-dependent degradation leads to the definition of an aging-aware sensitivity, which is compared to currently available degradation simulation flows and proves to be efficient in the estimation of circuit degradation. Using the aging-aware sensitivity, several analog circuits are investigated and optimized towards higher reliability. Finally, results are presented for numerous target specifications

Fiabilisation de Convertisseurs Analogique-Num´erique a Modulation Sigma-Delta

Due to the continuously scaling down of CMOS technology, system-on-chips (SoCs) reliability becomes important in sub-90 nm CMOS node. Integrated circuits and systems applied to aerospace, avionic, vehicle transport and biomedicine are highly sensitive to reliability problems such as ageing mechanisms and parametric process variations. Novel SoCs with new materials and architectures of high complexity further aggravate reliability as a critical aspect of process integration. For instance, random and systematic defects as well as parametric process variations have a large influence on quality and yield of the manufactured ICs, right after production. During ICs usage time, time-dependent ageing mechanisms such as negative bias temperature instability (NBTI) and hot carrier injection (HCI) can significantly degrade ICs performance.La fiabilit´e des ICs est d´efinie ainsi : la capacit´e d’un circuit ou un syst`eme int´egr´e `amaintenir ses param`etres durant une p´eriode donn´ee sous des conditions d´efinies. Les rapportsITRS 2011 consid`ere la fiabilit´e comme un aspect critique du processus d’int´egration.Par cons´equent, il faut faire appel des m´ethodologies innovatrices prenant en comptela fiabilit´e afin d’assurer la fonctionnalit´e du SoCs et la fiabilit´e dans les technologiesCMOS `a l’´echelle nanom´etrique. Cela nous permettra de d´evelopper des m´ethodologiesind´ependantes du design et de la technologie CMOS, en revanche, sp´ecialis´ees en fiabilit´e

Fiabilisation de convertisseurs analogique-numérique à modulation Sigma-Delta

This thesis concentrates on reliability-aware methodology development, reliability analysis based on simulation as well as failure prediction of CMOS 65nm analog and mixed signal (AMS) ICs. Sigma-Delta modulators are concerned as the object of reliability study at system level. A hierarchical statistical approach for reliability is proposed to analysis the performance of Sigma-Delta modulators under ageing effects and process variations. Statistical methods are combined into this analysis flow.Ce travail de thèse a porté sur des problèmes de fiabilité de circuits intégrés en technologie CMOS 65 nm, en particulier sur la conception en vue de la fiabilité, la simulation et l'amélioration de la fiabilité. Les mécanismes dominants de vieillissement HCI et NBTI ainsi que la variation du processus ont été étudiés et évalués quantitativement au niveau du circuit et au niveau du système. Ces méthodes ont été appliquées aux modulateurs Sigma-Delta afin de déterminer la fiabilité de ce type de composant qui est très utilisé

Alterungsanalyse komplexer analoger integrierter Schaltungen aus Systemsicht

The design of analog circuits ranges from the specifications on system level, the selection of a suitable circuit topology up to the choice of the concrete physical dimensions of components like transistors. The individual steps are performed within computer-aided design environments. These environments are based on a database made available by the semiconductor manufacturers containing process parameters and influences on the components. In particular, the influences to be considered in the design have increased in recent years due to the continuous reduction of the producible structural sizes. Thus, it must be possible to analyze the deviations due to process, temperature, time degradation and, for special applications, radiation influences during the design phase. Conventional approaches regard these additional effects as standing next to the actual design process. As a result, the latter is no longer consistent and it is much more complex to consider different circuits and effects on different abstraction levels within the design flow. The focus of this work lies on the development of a consistent consideration of process, voltage, temperature, aging and radiation influences (PVTAR) during the entire design process of analog circuits to the initial measurement of manufactured circuits. To achieve this goal, a transistor model was extended by the influences to be considered. Thereby, the analysis of the additional effects is seamlessly integrated into conventional design processes and methods. In addition, the possibility of a structured analog design is evaluated. This approach allows the estimation of PVTAR influences on dedicated analog function blocks and their propagation on circuit level. Thus, the enormous simulation effort associated with aging analyses can be reduced. The design and manufacture of circuits is always followed by the measurement of the core properties of these circuits. In the context of this work a method was developed which makes it possible to use all insights from the design of a circuit for the improvement of the measuring results. In addition, the internal parameter sets of individual components can be inferred from the terminal behavior of circuits and systems. Finally, the results of the measurement method can be used for the automated calculation of circuit reliability parameters

Robustness and durability aspects in the design of power management circuits for IoT applications

With the increasing interest in the heterogeneous world of the “Internet of Things” (IoT), new compelling challenges arise in the field of electronic design, especially concerning the development of innovative power management solutions. Being this diffusion a consolidated reality nowadays, emerging needs like lifetime, durability and robustness are becoming the new watchwords for power management, being a common ground which can dramatically improve service life and confidence in these devices. The possibility to design nodes which do not need external power supply is a crucial point in this scenario. Moreover, the development of autonomous nodes which are substantially maintenance free, and which therefore can be placed in unreachable or harsh environments is another enabling aspect for the exploitation of this technology. In this respect, the study of energy harvesting techniques is increasingly earning interest again. Along with efficiency aspects, degradation aspects are the other main research field with respect to lifetime, durability and robustness of IoT devices, especially related to aging mechanisms which are peculiar in power management and power conversion circuits, like for example battery wear during usage or hot-carrier degradation (HCD) in power MOSFETs. In this thesis different aspects related to lifetime, durability and robustness in the field of power management circuits are studied, leading to interesting contributions. Innovative designs of DC/DC power converters are studied and developed, especially related to reliability aspects of the use of electrochemical cells as power sources. Moreover, an advanced IoT node is proposed, based on energy harvesting techniques, which features an intelligent dynamically adaptive power management circuit. As a further contribution, a novel algorithm is proposed, which is able to effectively estimate the efficiency of a DC/DC converter for photovoltaic applications at runtime. Finally, an innovative DC/DC power converter with embedded monitoring of hot-carrier degradation in power MOSFETs is designed

Miniaturized Transistors, Volume II

In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon’s physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before