Design and implementation of a control system for use of galvanometric scanners in laser micromachining applications

In the recent years, laser machining technology has been used widely in industrial applications usually with the aim of increasing the production capability of mass production lines - especially for fast marking, engraving type of applications where speed is an important concern - or manufacturing quality of a certain facility by increasing the level of accuracy in material processing applications such as drilling, cutting; or any scientific research oriented work where high precision machining of parts in sub millimeter scale might be required. A galvanometric scanner is a high precision device that is able to steer a laser beam with a mirror attached to a motor, whose rotor angular range is usually limited with tens of degrees in both directions of rotation; and position is controlled either by voltage or current. Due to their lightness, the rotor and the mirror can move very fast, allowing fast marking (burning out) operation with the laser beam. This can be evaluated as a great advantage compared to slower mechanical appliances used for cutting/machining of different materials. This study concentrates on the analysis of galvanometric scanner system components; and the design and implementation of a hardware and software based control system for a dual-axis galvo setup; and their adaptation for use in laser micromachining applications either as a standalone system or a modular subsystem. Analysis part of the thesis work contains: evaluation of dominant laser micromachining techniques, an overview of the galvanometric scanner system based approach and related components (e.g. electromechanical, electrical, optical), understanding of working principles and related simulation work, compatibility issues with the target micromachining applications. Design part of the thesis work includes: the design and implementation of electronic controller board, intermediate drive electronics stage, microcontroller programming for machining control algorithm, interfacing with graphical user interface based control software and production of necessary mechanical parts. The study has been finalized with experimental work and evaluation of obtained results. The results of these studies are promising and motivate the use of laser galvanometric scanner systems in laser micromachining applications

Virtual metrology for plasma etch processes.

Plasma processes can present dicult control challenges due to time-varying dynamics and a lack of relevant and/or regular measurements. Virtual metrology (VM) is the use of mathematical models with accessible measurements from an operating process to estimate variables of interest. This thesis addresses the challenge of virtual metrology for plasma processes, with a particular focus on semiconductor plasma etch. Introductory material covering the essentials of plasma physics, plasma etching, plasma measurement techniques, and black-box modelling techniques is rst presented for readers not familiar with these subjects. A comprehensive literature review is then completed to detail the state of the art in modelling and VM research for plasma etch processes. To demonstrate the versatility of VM, a temperature monitoring system utilising a state-space model and Luenberger observer is designed for the variable specic impulse magnetoplasma rocket (VASIMR) engine, a plasma-based space propulsion system. The temperature monitoring system uses optical emission spectroscopy (OES) measurements from the VASIMR engine plasma to correct temperature estimates in the presence of modelling error and inaccurate initial conditions. Temperature estimates within 2% of the real values are achieved using this scheme. An extensive examination of the implementation of a wafer-to-wafer VM scheme to estimate plasma etch rate for an industrial plasma etch process is presented. The VM models estimate etch rate using measurements from the processing tool and a plasma impedance monitor (PIM). A selection of modelling techniques are considered for VM modelling, and Gaussian process regression (GPR) is applied for the rst time for VM of plasma etch rate. Models with global and local scope are compared, and modelling schemes that attempt to cater for the etch process dynamics are proposed. GPR-based windowed models produce the most accurate estimates, achieving mean absolute percentage errors (MAPEs) of approximately 1:15%. The consistency of the results presented suggests that this level of accuracy represents the best accuracy achievable for the plasma etch system at the current frequency of metrology. Finally, a real-time VM and model predictive control (MPC) scheme for control of plasma electron density in an industrial etch chamber is designed and tested. The VM scheme uses PIM measurements to estimate electron density in real time. A predictive functional control (PFC) scheme is implemented to cater for a time delay in the VM system. The controller achieves time constants of less than one second, no overshoot, and excellent disturbance rejection properties. The PFC scheme is further expanded by adapting the internal model in the controller in real time in response to changes in the process operating point

Virtual metrology for plasma etch processes.

Plasma processes can present dicult control challenges due to time-varying dynamics and a lack of relevant and/or regular measurements. Virtual metrology (VM) is the use of mathematical models with accessible measurements from an operating process to estimate variables of interest. This thesis addresses the challenge of virtual metrology for plasma processes, with a particular focus on semiconductor plasma etch. Introductory material covering the essentials of plasma physics, plasma etching, plasma measurement techniques, and black-box modelling techniques is rst presented for readers not familiar with these subjects. A comprehensive literature review is then completed to detail the state of the art in modelling and VM research for plasma etch processes. To demonstrate the versatility of VM, a temperature monitoring system utilising a state-space model and Luenberger observer is designed for the variable specic impulse magnetoplasma rocket (VASIMR) engine, a plasma-based space propulsion system. The temperature monitoring system uses optical emission spectroscopy (OES) measurements from the VASIMR engine plasma to correct temperature estimates in the presence of modelling error and inaccurate initial conditions. Temperature estimates within 2% of the real values are achieved using this scheme. An extensive examination of the implementation of a wafer-to-wafer VM scheme to estimate plasma etch rate for an industrial plasma etch process is presented. The VM models estimate etch rate using measurements from the processing tool and a plasma impedance monitor (PIM). A selection of modelling techniques are considered for VM modelling, and Gaussian process regression (GPR) is applied for the rst time for VM of plasma etch rate. Models with global and local scope are compared, and modelling schemes that attempt to cater for the etch process dynamics are proposed. GPR-based windowed models produce the most accurate estimates, achieving mean absolute percentage errors (MAPEs) of approximately 1:15%. The consistency of the results presented suggests that this level of accuracy represents the best accuracy achievable for the plasma etch system at the current frequency of metrology. Finally, a real-time VM and model predictive control (MPC) scheme for control of plasma electron density in an industrial etch chamber is designed and tested. The VM scheme uses PIM measurements to estimate electron density in real time. A predictive functional control (PFC) scheme is implemented to cater for a time delay in the VM system. The controller achieves time constants of less than one second, no overshoot, and excellent disturbance rejection properties. The PFC scheme is further expanded by adapting the internal model in the controller in real time in response to changes in the process operating point

High-Gain Transimpedance Amplifier With DC Photodiode Current Rejection

This master\u27s thesis deals with the design of a differential high-gain transimpedance amplifier in TSMC\u27s 0.18 um mixed signal process that utilizes a DC photodiode current cancellation loop and a switching automatic gain control (AGC) with a bilinear gain curve. The amplifier is designed to satisfy the demands of Optical Coherence Tomography applications where the receiver is expected to measure the envelope power of an amplitude modulated sinusoidal optical signal that incorporates a large DC component. Methods of increasing dynamic range and gain linearity through the use of DC photodiode current cancellation and bilinear gain are explored. Effects of changing DC photodiode current on the overall system response is also demonstrated

Real-time virtual metrology and control for plasma etch

Plasma etch is a semiconductor manufacturing process during which material is removed from the surface of semiconducting wafers, typically made of silicon, using gases in plasma form. A host of chemical and electrical complexities make the etch process notoriously difficult to model and troublesome to control. This work demonstrates the use of a real-time model predictive control scheme to control plasma electron density and plasma etch rate in the presence of disturbances to the ground path of the chamber. Virtual metrology (VM) models, using plasma impedance measurements, are used to estimate the plasma electron density and plasma etch rate in real time for control, eliminating the requirement for invasive measurements. The virtual metrology and control schemes exhibit fast set-point tracking and disturbance rejection capabilities. Etch rate can be controlled to within 1% of the desired value. Such control represents a significant improvement over open-loop operation of etch tools, where variances in etch rate of up to 5% can be observed during production processes due to disturbances in tool state and material properties

Advances in Optical Amplifiers

Optical amplifiers play a central role in all categories of fibre communications systems and networks. By compensating for the losses exerted by the transmission medium and the components through which the signals pass, they reduce the need for expensive and slow optical-electrical-optical conversion. The photonic gain media, which are normally based on glass- or semiconductor-based waveguides, can amplify many high speed wavelength division multiplexed channels simultaneously. Recent research has also concentrated on wavelength conversion, switching, demultiplexing in the time domain and other enhanced functions. Advances in Optical Amplifiers presents up to date results on amplifier performance, along with explanations of their relevance, from leading researchers in the field. Its chapters cover amplifiers based on rare earth doped fibres and waveguides, stimulated Raman scattering, nonlinear parametric processes and semiconductor media. Wavelength conversion and other enhanced signal processing functions are also considered in depth. This book is targeted at research, development and design engineers from teams in manufacturing industry, academia and telecommunications service operators

Virtual metrology for semiconductor manufacturing applications

Per essere competitive nel mercato, le industrie di semiconduttori devono poter raggiungere elevati standard di produzione a un prezzo ragionevole. Per motivi legati tanto ai costi quanto ai tempi di esecuzione, una strategia di controllo della qualità che preveda la misurazione completa del prodotto non è attuabile; i test sono eettuati su un ristretto campione dei dati originali. Il traguardo del presente lavoro di Tesi è lo studio e l'implementazione, attraverso metodologie di modellistica tipo non lineare, di un algoritmo di metrologia virtuale (Virtual Metrology) d'ausilio al controllo di processo nella produzione di semiconduttori. Infatti, la conoscenza di una stima delle misure non realmente eseguite (misure virtuali) può rappresentare un primo passo verso la costruzione di sistemi di controllo di processo e controllo della qualità sempre più ranati ed ecienti. Da un punto di vista operativo, l'obiettivo è fornire la più accurata stima possibile delle dimensioni critiche a monte della fase di etching, a partire dai dati disponibili (includendo misurazioni da fasi di litograa e deposizione e dati di processo - ove disponibili). Le tecniche statistiche allo stato dell'arte analizzate in questo lavoro comprendono: - multilayer feedforward networks; Confronto e validazione degli algoritmi presi in esame sono stati possibili grazie ai data-set forniti da un'industria manifatturiera di semiconduttori. In conclusione, questo lavoro di Tesi rappresenta un primo passo verso la creazione di un sistema di controllo di processo e controllo della qualità evoluto e essibile, che abbia il ne ultimo di migliorare la qualità della produzione.ope

Optical Microwave Signal Generation for Data Transmission in Optical Networks

The massive growth of telecommunication services and the increasing global data traffic boost the development, implementation, and integration of different networks for data transmission. An example of this development is the optical fiber networks, responsible today for the inter-continental connection through long-distance links and high transfer rates. The optical networks, as well as the networks supported by other transmission media, use electrical signals at specific frequencies for the synchronization of the network elements. The quality of these signals is usually determined in terms of phase noise. Due to the major impact of the phase noise over the system performance, its value should be minimized. The research work presented in this document describes the design and implementation of an optoelectronic system for the microwave signal generation using a vertical-cavity surface-emitting laser (VCSEL) and its integration into an optical data transmission system. Considering that the proposed system incorporates a directly modulated VCSEL, a theoretical and experimental characterization was developed based on the laser rate equations, dynamic and static measurements, and an equivalent electrical model of the active region. This procedure made possible the extraction of some VCSEL intrinsic parameters, as well as the validation and simulation of the VCSEL performance under specific modulation conditions. The VCSEL emits in C-band, this wavelength was selected because it is used in long-haul links. The proposed system is a self-initiated oscillation system caused by internal noise sources, which includes a VCSEL modulated in large signal to generate optical pulses (gain switching). The optical pulses, and the optical frequency comb associated, generate in electrical domain simultaneously a fundamental frequency (determined by a band-pass filter) and several harmonics. The phase noise measured at 10 kHz from the carrier at 1.25 GHz was -127.8 dBc/Hz, and it is the lowest value reported in the literature for this frequency and architecture. Both the jitter and optical pulse width were determined when different resonant cavities and polarization currents were employed. The lowest pulse duration was 85 ps and was achieved when the fundamental frequency was 2.5 GHz. As for the optical frequency comb, it was demonstrated that its flatness depends on the electrical modulation conditions. The flattest profiles are obtained when the fundamental frequency is higher than the VCSEL relaxation frequency. Both the electrical and the optical output of the system were integrated into an optical transmitter. The electrical signal provides the synchronization of the data generating equipment, whereas the optical pulses are employed as an optical carrier. Data transmissions at 155.52 Mb/s, 622.08 Mb/s and 1.25 Gb/s were experimentally validated. It was demonstrated that the fundamental frequency and harmonics could be extracted from the optical data signal transmitted by a band-pass filter. It was also experimentally proved that the pulsed return-to-zero (RZ) transmitter at 1.25 Gb/s, achieves bit error rates (BER) lower than $10^{-9}$ when the optical power at the receiver is higher than -33 dBm.La masificación de los servicios de telecomunicaciones y el creciente tráfico global de datos han impulsado el desarrollo, despliegue e integración de diferentes redes para la transmisión de datos. Un ejemplo de este despliegue son las redes de fibra óptica, responsables en la actualidad de la interconexión de los continentes a través de enlaces de grandes longitudes y altas tasas de transferencia. Las redes ópticas, al igual que las redes soportadas por otros medios de transmisión, utilizan señales eléctricas a frecuencias específicas para la sincronización de los elementos de red. La calidad de estas señales es determinante en el desempeño general del sistema, razón por la que su ruido de fase debe ser lo más pequeño posible. El trabajo de investigación presentado en este documento describe el diseño e implementación de un sistema optoelectrónico para la generación de señales microondas utilizando diodos láser de cavidad vertical (VCSEL) y su integración en un sistema de transmisión de datos óptico. Teniendo en cuenta que el sistema propuesto incorpora un láser VCSEL modulado directamente, se desarrolló una caracterización teórico-experimental basada en las ecuaciones de evolución del láser, mediciones dinámicas y estáticas, y un modelo eléctrico equivalente de la región activa. Este procedimiento posibilitó la extracción de algunos parámetros intrínsecos del VCSEL, al igual que la validación y simulación de su desempeño bajo diferentes condiciones de modulación. El VCSEL utilizado emite en banda C y fue seleccionado considerando que esta banda es comúnmente utilizada en enlaces de largo alcance. El sistema propuesto consiste en un lazo cerrado que inicia la oscilación gracias a las fuentes de ruido de los componentes y modula el VCSEL en gran señal para generar pulsos ópticos (conmutación de ganancia). Estos pulsos ópticos, que en el dominio de la frecuencia corresponden a un peine de frecuencia óptico, son detectados para generar simultáneamente una frecuencia fundamental (determinada por un filtro pasa banda) y varios armónicos. El ruido de fase medido a 10 kHz de la portadora a 1.25 GHz fue -127.8 dBc/Hz, y es el valor más bajo reportado en la literatura para esta frecuencia y arquitectura. Tanto la fluctuación de fase (jitter) y el ancho de los pulsos ópticos fueron determinados cuando diferentes cavidades resonantes y corrientes de polarización fueron empleadas. La duración de pulso más baja fue 85 ps y se obtuvo cuando la frecuencia fundamental del sistema era 2.5 GHz. En cuanto al peine de frecuencia óptico, se demostró que su planitud (flatness) depende de las condiciones eléctricas de modulación y que los perfiles más planos se obtienen cuando la frecuencia fundamental es superior a la frecuencia de relajación del VCSEL. Tanto la salida eléctrica como la salida óptica del sistema fueron integradas en un transmisor óptico. La señal eléctrica permite la sincronización de los equipos encargados de generar los datos, mientras que los pulsos ópticos son utilizados como portadora óptica. La transmisión de datos a 155.52 Mb/s, 622.08 Mb/s y 1.25 Gb/s fue validada experimentalmente. Se demostró que la frecuencia fundamental y los armónicos pueden ser extraídos de la señal óptica de datos transmitida mediante un filtro pasa banda. También se comprobó experimentalmente que el transmisor de datos pulsados con retorno a cero (RZ) a 1.25 Gb/s, logra tasas de error de bit (BER) menores a 10-9 cuando la potencia óptica en el receptor es mayor a -33 dBm.Gobernación de NariñoBPIN 2013000100092Doctorad