12,354 research outputs found
Block Structured Adaptive Mesh and Time Refinement for Hybrid, Hyperbolic + N-body Systems
We present a new numerical algorithm for the solution of coupled collisional
and collisionless systems, based on the block structured adaptive mesh and time
refinement strategy (AMR). We describe the issues associated with the
discretization of the system equations and the synchronization of the numerical
solution on the hierarchy of grid levels. We implement a code based on a higher
order, conservative and directionally unsplit Godunov's method for
hydrodynamics; a symmetric, time centered modified symplectic scheme for
collisionless component; and a multilevel, multigrid relaxation algorithm for
the elliptic equation coupling the two components. Numerical results that
illustrate the accuracy of the code and the relative merit of various
implemented schemes are also presented.Comment: 40 pages, 10 figures, JPC in press. Extended the code test section,
new convergence tests, several typos corrected. Full resolution version
available at http://www.exp-astro.phys.ethz.ch/miniati/charm.pd
Codes for Asymmetric Limited-Magnitude Errors With Application to Multilevel Flash Memories
Several physical effects that limit the reliability and performance of multilevel flash memories induce errors that have low magnitudes and are dominantly asymmetric. This paper studies block codes for asymmetric limited-magnitude errors over q-ary channels. We propose code constructions and bounds for such channels when the number of errors is bounded by t and the error magnitudes are bounded by â. The constructions utilize known codes for symmetric errors, over small alphabets, to protect large-alphabet symbols from asymmetric limited-magnitude errors. The encoding and decoding of these codes are performed over the small alphabet whose size depends only on the maximum error magnitude and is independent of the alphabet size of the outer code. Moreover, the size of the codes is shown to exceed the sizes of known codes (for related error models), and asymptotic rate-optimality results are proved. Extensions of the construction are proposed to accommodate variations on the error model and to include systematic codes as a benefit to practical implementation
Rewriting Codes for Joint Information Storage in Flash Memories
Memories whose storage cells transit irreversibly between
states have been common since the start of the data storage
technology. In recent years, flash memories have become a very
important family of such memories. A flash memory cell has q
statesâstate 0.1.....q-1 - and can only transit from a lower
state to a higher state before the expensive erasure operation takes
place. We study rewriting codes that enable the data stored in a
group of cells to be rewritten by only shifting the cells to higher
states. Since the considered state transitions are irreversible, the
number of rewrites is bounded. Our objective is to maximize the
number of times the data can be rewritten. We focus on the joint
storage of data in flash memories, and study two rewriting codes
for two different scenarios. The first code, called floating code, is for
the joint storage of multiple variables, where every rewrite changes
one variable. The second code, called buffer code, is for remembering
the most recent data in a data stream. Many of the codes
presented here are either optimal or asymptotically optimal. We
also present bounds to the performance of general codes. The results
show that rewriting codes can integrate a flash memoryâs
rewriting capabilities for different variables to a high degree
Using Short Synchronous WOM Codes to Make WOM Codes Decodable
In the framework of write-once memory (WOM) codes, it is important to
distinguish between codes that can be decoded directly and those that require
that the decoder knows the current generation to successfully decode the state
of the memory. A widely used approach to construct WOM codes is to design first
nondecodable codes that approach the boundaries of the capacity region, and
then make them decodable by appending additional cells that store the current
generation, at an expense of a rate loss. In this paper, we propose an
alternative method to make nondecodable WOM codes decodable by appending cells
that also store some additional data. The key idea is to append to the original
(nondecodable) code a short synchronous WOM code and write generations of the
original code and of the synchronous code simultaneously. We consider both the
binary and the nonbinary case. Furthermore, we propose a construction of
synchronous WOM codes, which are then used to make nondecodable codes
decodable. For short-to-moderate block lengths, the proposed method
significantly reduces the rate loss as compared to the standard method.Comment: To appear in IEEE Transactions on Communications. The material in
this paper was presented in part at the 2012 IEEE International Symposium on
Information Theory, Cambridge, MA, July 201
Increasing Flash Memory Lifetime by Dynamic Voltage Allocation for Constant Mutual Information
The read channel in Flash memory systems degrades over time because the
Fowler-Nordheim tunneling used to apply charge to the floating gate eventually
compromises the integrity of the cell because of tunnel oxide degradation.
While degradation is commonly measured in the number of program/erase cycles
experienced by a cell, the degradation is proportional to the number of
electrons forced into the floating gate and later released by the erasing
process. By managing the amount of charge written to the floating gate to
maintain a constant read-channel mutual information, Flash lifetime can be
extended. This paper proposes an overall system approach based on information
theory to extend the lifetime of a flash memory device. Using the instantaneous
storage capacity of a noisy flash memory channel, our approach allocates the
read voltage of flash cell dynamically as it wears out gradually over time. A
practical estimation of the instantaneous capacity is also proposed based on
soft information via multiple reads of the memory cells.Comment: 5 pages. 5 figure
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