Smart Sensor Networks For Sensor-Neural Interface

One in every fifty Americans suffers from paralysis, and approximately 23% of paralysis cases are caused by spinal cord injury. To help the spinal cord injured gain functionality of their paralyzed or lost body parts, a sensor-neural-actuator system is commonly used. The system includes: 1) sensor nodes, 2) a central control unit, 3) the neural-computer interface and 4) actuators. This thesis focuses on a sensor-neural interface and presents the research related to circuits for the sensor-neural interface. In Chapter 2, three sensor designs are discussed, including a compressive sampling image sensor, an optical force sensor and a passive scattering force sensor. Chapter 3 discusses the design of the analog front-end circuit for the wireless sensor network system. A low-noise low-power analog front-end circuit in 0.5μm CMOS technology, a 12-bit 1MS/s successive approximation register (SAR) analog-to-digital converter (ADC) in 0.18μm CMOS process and a 6-bit asynchronous level-crossing ADC realized in 0.18μm CMOS process are presented. Chapter 4 shows the design of a low-power impulse-radio ultra-wide-band (IR-UWB) transceiver (TRx) that operates at a data rate of up to 10Mbps, with a power consumption of 4.9pJ/bit transmitted for the transmitter and 1.12nJ/bit received for the receiver. In Chapter 5, a wireless fully event-driven electrogoniometer is presented. The electrogoniometer is implemented using a pair of ultra-wide band (UWB) wireless smart sensor nodes interfacing with low power 3-axis accelerometers. The two smart sensor nodes are configured into a master node and a slave node, respectively. An experimental scenario data analysis shows higher than 90% reduction of the total data throughput using the proposed fully event-driven electrogoniometer to measure joint angle movements when compared with a synchronous Nyquist-rate sampling system. The main contribution of this thesis includes: 1) the sensor designs that emphasize power efficiency and data throughput efficiency; 2) the fully event-driven wireless sensor network system design that minimizes data throughput and optimizes power consumption

Annual Report 2019 - Institute of Ion Beam Physics and Materials Research

The Institute of Ion Beam Physics and Materials Research conducts materials research for future applications in, e.g., information technology. To this end, we make use of the various possibilities offered by our Ion Beam Center (IBC) for synthesis, modification, and analysis of thin films and nanostructures, as well as of the free-electron laser FELBE at HZDR for THz spectroscopy. The analyzed materials range from semiconductors and oxides to metals and magnetic materials. They are investigated with the goal to optimize their electronic, magnetic, optical as well as structural functionality. This research is embedded in the Helmholtz Association’s programme “From Matter to Materials and Life”. Seven publications from last year are highlighted in this Annual Report to illustrate the wide scientific spectrum of our institute. After the scientific evaluation in the framework of the Helmholtz Programme-Oriented Funding (POF) in 2018 we had some time to concentrate on science again before end of the year a few of us again had to prepare for the strategic evaluation which took place in January 2020, which finally was also successful for the Institute

Ultra-thin chips for high-performance flexible electronics

Flexible electronics has significantly advanced over the last few years, as devices and circuits from nanoscale structures to printed thin films have started to appear. Simultaneously, the demand for high-performance electronics has also increased because flexible and compact integrated circuits are needed to obtain fully flexible electronic systems. It is challenging to obtain flexible and compact integrated circuits as the silicon based CMOS electronics, which is currently the industry standard for high-performance, is planar and the brittle nature of silicon makes bendability difficult. For this reason, the ultra-thin chips from silicon is gaining interest. This review provides an in-depth analysis of various approaches for obtaining ultra-thin chips from rigid silicon wafer. The comprehensive study presented here includes analysis of ultra-thin chips properties such as the electrical, thermal, optical and mechanical properties, stress modelling, and packaging techniques. The underpinning advances in areas such as sensing, computing, data storage, and energy have been discussed along with several emerging applications (e.g., wearable systems, m-Health, smart cities and Internet of Things etc.) they will enable. This paper is targeted to the readers working in the field of integrated circuits on thin and bendable silicon; but it can be of broad interest to everyone working in the field of flexible electronics

Sensitive Skin for Robotics

This thesis explores two novel ways of reducing the data complexity of tactile sensing. The thesis begins by examining the state-of-the art in tactile sensing, not only examining the sensor construction and interpretation of data but also the motivation for these designs. The thesis then proposes two methods for reducing the complexity of data in tactile sensing. The first is a low-power tactile sensing array exploiting a novel application of a pressure-sensitive material called quantum tunnelling composite. The properties of this material in this array form are shown to be beneficial in robotics. The electrical characteristics of the material are also explored. A bit-based structure for representing tactile data called Bitworld is then defined and its computational performance is characterised. It is shown that this bit-based structure outperforms floating-point arrays by orders of magnitude. This structure is then shown to allow high-resolution images to be produced by combining low resolution sensor arrays with equivalent functional performance to a floating-point array, but with the advantages of computational efficiency. Finally, an investigation into making Bitworld robust in the presence of positional noise is described with simulations to verify that such robustness can be achieved. Overall, the sensor and data structure described in this thesis allow simple, but effective tactile systems to be deployed in robotics without requiring a significant commitment of computational or power resources on the part of a robot designer.EThOS - Electronic Theses Online ServiceGBUnited Kingdo

Thin-film Bulk Acoustic Resonators on Integrated Circuits for Physical Sensing Applications

Merging chemical and biomolecular sensors with silicon integrated circuits has the potential to push complex electronics into a low-cost, portable platform, greatly simplifying system- level instrumentation and extending the reach and functionality of point of use technologies. One such class of sensor, the thin-film bulk acoustic resonator (FBAR), has a micron-scale size and low gigahertz frequency range that is ideally matched with modern complementary metal-oxide-semiconductor (CMOS) technologies. An FBAR sensor can enable label-free detection of analytes in real time, and CMOS integration can overcome the measurement complexity and equipment cost normally required for detection with acoustic resonators. This thesis describes a body of work conducted to integrate an array of FBAR sensors with an active CMOS substrate. A monolithic fabrication method is developed, which allows for FBAR devices to be built directly on the top surface of the CMOS chip through post-processing. A custom substrate is designed and fabricated in 0.18 µm CMOS to support oscillation and frequency measurement for each sensor site in a 6×4 array. The fabrication of 0.8-1.5 GHz FBAR devices is validated for both off-chip and on-chip devices, and the integrated system is characterized for sensitivity and limit of detection. On-chip, parallel measurement of multiple sensors in real time is demonstrated for a quantitative vapor sensing application, and the limit of detection is below 50 ppm. This sensor platform could be used for a broad scope of label-free detection applications in chemistry, biology, and medicine, and it demonstrates potential for enabling a low-cost, point of use instrument

Photodiodes and Image Sensors on Mechanically Flexible Ultra-Thin Silicon Chips-in-Foil

CMOS-Bildsensoren haben in den letzten zwei Jahrzehnten enorme technologische Fortschritte erfahren und sich als eine wettbewerbsfähige Alternative gegenüber CCDBildsensoren auf dem Markt etabliert. Reduziert man die Chipdicke von CMOSBildsensoren von normal 725 μm auf ≤ 30 μm, erhält man mechanisch flexible Bildaufnehmer. Gewölbte CMOS-Bildsensoren würden für die optische Wahrnehmung völlig neue Möglichkeiten eröffnen (wie z. B. bei Insektenaugen). Betrachtet man die auf dem Chip integrierten Bauelemente und Schaltungen unter mechanischen Spannungen, stellt man fest, dass ihre elektrischen und optoelektronischen Eigenschaften von der ausgeübten mechanischen Spannung beeinflusst werden. Für den technischen Einsatz ist eine vom mechanischen Zustand des Bildsensors unbeinflusste Funktion erforderlich. Der Einfluss von mechanischer Spannung auf die Bauelemente- und Schaltungs-Charakteristiken und seine Minimierung bzw. Kompensation sind daher von besonderem Interesse. In dieser Arbeit wurden die optischen und elektrischen Eigenschaften von passiven und aktiven Bauelementen, sowie integrierten Schaltungen auf monokristallinen gedünnten flexiblen Siliziumchips unter mechanischen Spannungen untersucht. Der Einfluss von mechanischen Spannungen auf optische Eigenschaften (spektrale Lichtempfindlichkeit, Dunkelstrom und elektronisches Rauschen) einzelner p-n-Übergang basierter Photodioden und Bildsensorarrays auf (100)-Siliziumwafern wurde theoretisch modelliert und experimentell charakterisiert. Weiterhin wurden die elektrischen Eigenschaften (Ladungsträgerbeweglichkeit, Schwellenspannung, 1/f Rauschen) von MOSFeldeffekttransistoren in Bezug auf mechanischen Spannungen charakterisiert und ihre Abhängigkeit von der Orientierung zur Kristallorientierung des Substrats untersucht. Integrierte Schaltungen, wie Bandgap-Referenzspannungsquellen, Operationsverstärker und SC-basierte Schaltungen wurden unter mechanischen Spannungen theoretisch betrachtet, entworfen, gefertigt und experimentell charakterisiert. Mit Hilfe des in dieser Arbeit vorgeschlagenen und eingesetzten Simulationskonzeptes, ist die Schaltungssimulation der obengenannten Abhängigkeiten möglich. Dadurch hat der Schaltungsentwickler die Möglichkeit Schaltungskonzepte zur Kompensation oder Minimierung der von der mechanischen Spannung hervorgerufenen Einflüsse zu simulieren. In dieser Hinsicht werden Schaltungskonzepte und Design-Regeln präsentiert, die den Einfluss von mechanischen Spannungen auf Bildsensorchips berücksichtigen und minimieren. Im Rahmen dieser Arbeit wurde darüber hinaus ein mechanisch flexibler Bildsensorchip entworfen, simuliert und gefertigt, dessen Betrieb unabhängig von der ausgeübten mechanischen Spannung ist. Der ultra-dünne 20 μm Bildsensorchip ist geeignet auf zylindrisch gewölbte Oberflächen aufgebracht zu werden und erlaubt die Aufnahme raumrichtungsselektiver optischer Informationen im Sinne eines Panoramablicks.CMOS image sensors (CIS) have experienced the last two decades tremendous technological advances rendering them a viable alternative to charged couple devices (CCDs) not only in high volume applications but also in applications which require high spatial and temporal resolution, high dynamic range, low noise or high sensitivity levels. CISs are employed due to their increased chip thickness (ca. 750 μm) solely in the traditional planar image acquisition. If the chip thickness could be reduced down to or less than 30 μm, the silicon chips would become mechanically flexible. Such flexible CISs could substantially extend the application spectrum of image sensors in non-conventional imaging systems (e.g. imitating insect vision). However, the on-chip integrated devices and circuits exhibit stress-induced changes on their electrical and optoelectronic characteristics. Since a stress independent operation is striven, the minimization or compensation of the influence of mechanical stress on the characteristics of devices and circuits is of great interest. In this work optical and electrical properties of passive and active devices as well as integrated circuits on ultra-thin monolithic flexible silicon chips have been investigated under the application of mechanical stress. The influence of mechanical stress on the optical characteristics (spectral sensitivity, dark current and electronic noise) of p-n junction based photodiodes and image sensor chips on (100)-silicon wafers have been theoretically modeled and experimentally characterized. Moreover, the electrical characteristics (carrier mobility, threshold voltage and 1/f noise) of mechanically strained MOS field-effect transistors and their dependence on the channel orientation on the substrate have been investigated. Integrated circuits such as bandgap reference voltage sources, operational amplifiers and switched capacitor (SC) based circuits have been theoretically treated, designed, fabricated and experimentally characterized. Within this framework a simulation technique has been proposed and deployed, which allows the simulation of the above mentioned stress dependence on device and circuit level. The analog circuit designer can employ the simulation technique toward the proposal of circuit topologies or techniques, which minimize or compensate the strain-induced changes on the circuit operation. In this direction, circuit concepts and design rules are proposed, which minimize the influence of mechanical stress on flexible CIS chips. Within the scope of this work, a mechanically flexible CMOS image sensor chip has been designed, simulated and fabricated, which operation is stress independent. The developed ultra-thin 20 μm CIS chip can be wrapped around a cylindrically curved surface and thus record panoramic optical information

Engineering for a Changing World: 59th IWK, Ilmenau Scientific Colloquium, Technische Universität Ilmenau, September 11-15, 2017 : programme

In 2017, the Ilmenau Scientific Colloquium is again organised by the Department of Mechanical Engineering. The title of this year’s conference “Engineering for a Changing World” refers to limited natural resources of our planet, to massive changes in cooperation between continents, countries, institutions and people – enabled by the increased implementation of information technology as the probably most dominant driver in many fields. The Colloquium, complemented by workshops, is characterised by the following topics, but not limited to them: – Precision Engineering and Metrology – Industry 4.0 and Digitalisation in Mechanical Engineering – Mechatronics, Biomechatronics and Mechanism Technology – Systems Technology – Innovative Metallic Materials The topics are oriented on key strategic aspects of research and teaching in Mechanical Engineering at our university