A novel deep submicron bulk planar sizing strategy for low energy subthreshold standard cell libraries

Engineering andPhysical Science ResearchCouncil (EPSRC) and Arm Ltd for providing funding in the form of grants and studentshipsThis work investigates bulk planar deep submicron semiconductor physics in an attempt to improve standard cell libraries aimed at operation in the subthreshold regime and in Ultra Wide Dynamic Voltage Scaling schemes. The current state of research in the field is examined, with particular emphasis on how subthreshold physical effects degrade robustness, variability and performance. How prevalent these physical effects are in a commercial 65nm library is then investigated by extensive modeling of a BSIM4.5 compact model. Three distinct sizing strategies emerge, cells of each strategy are laid out and post-layout parasitically extracted models simulated to determine the advantages/disadvantages of each. Full custom ring oscillators are designed and manufactured. Measured results reveal a close correlation with the simulated results, with frequency improvements of up to 2.75X/2.43X obs erved for RVT/LVT devices respectively. The experiment provides the first silicon evidence of the improvement capability of the Inverse Narrow Width Effect over a wide supply voltage range, as well as a mechanism of additional temperature stability in the subthreshold regime. A novel sizing strategy is proposed and pursued to determine whether it is able to produce a superior complex circuit design using a commercial digital synthesis flow. Two 128 bit AES cores are synthesized from the novel sizing strategy and compared against a third AES core synthesized from a state-of-the-art subthreshold standard cell library used by ARM. Results show improvements in energy-per-cycle of up to 27.3% and frequency improvements of up to 10.25X. The novel subthreshold sizing strategy proves superior over a temperature range of 0 °C to 85 °C with a nominal (20 °C) improvement in energy-per-cycle of 24% and frequency improvement of 8.65X. A comparison to prior art is then performed. Valid cases are presented where the proposed sizing strategy would be a candidate to produce superior subthreshold circuits

Security Aspects of Printed Electronics Applications

Gedruckte Elektronik (Printed Electronics (PE)) ist eine neu aufkommende Technologie welche komplementär zu konventioneller Elektronik eingesetzt wird. Dessen einzigartigen Merkmale führten zu einen starken Anstieg von Marktanteilen, welche 2010 \$6 Milliarden betrugen, \$41 Milliarden in 2019 und in 2027 geschätzt \$153 Milliarden. Gedruckte Elektronik kombiniert additive Technologien mit funktionalen Tinten um elektronische Komponenten aus verschiedenen Materialien direkt am Verwendungsort, kosteneffizient und umweltfreundlich herzustellen. Die dabei verwendeten Substrate können flexibel, leicht, transparent, großflächig oder implantierbar sein. Dadurch können mit gedruckter Elektronik (noch) visionäre Anwendungen wie Smart-Packaging, elektronische Einmalprodukte, Smart Labels oder digitale Haut realisiert werden. Um den Fortschritt von gedruckten Elektronik-Technologien voranzutreiben, basierten die meisten Optimierungen hauptsächlich auf der Erhöhung von Produktionsausbeute, Reliabilität und Performance. Jedoch wurde auch die Bedeutung von Sicherheitsaspekten von Hardware-Plattformen in den letzten Jahren immer mehr in den Vordergrund gerückt. Da realisierte Anwendungen in gedruckter Elektronik vitale Funktionalitäten bereitstellen können, die sensible Nutzerdaten beinhalten, wie zum Beispiel in implantierten Geräten und intelligenten Pflastern zur Gesundheitsüberwachung, führen Sicherheitsmängel und fehlendes Produktvertrauen in der Herstellungskette zu teils ernsten und schwerwiegenden Problemen. Des Weiteren, wegen den charakteristischen Merkmalen von gedruckter Elektronik, wie zum Beispiel additive Herstellungsverfahren, hohe Strukturgröße, wenige Schichten und begrenzten Produktionsschritten, ist gedruckte Hardware schon per se anfällig für hardware-basierte Attacken wie Reverse-Engineering, Produktfälschung und Hardware-Trojanern. Darüber hinaus ist die Adoption von Gegenmaßnahmen aus konventionellen Technologien unpassend und ineffizient, da solche zu extremen Mehraufwänden in der kostengünstigen Fertigung von gedruckter Elektronik führen würden. Aus diesem Grund liefert diese Arbeit eine Technologie-spezifische Bewertung von Bedrohungen auf der Hardware-Ebene und dessen Gegenmaßnahmen in der Form von Ressourcen-beschränkten Hardware-Primitiven, um die Produktionskette und Funktionalitäten von gedruckter Elektronik-Anwendungen zu schützen. Der erste Beitrag dieser Dissertation ist ein vorgeschlagener Ansatz um gedruckte Physical Unclonable Functions (pPUF) zu entwerfen, welche Sicherheitsschlüssel bereitstellen um mehrere sicherheitsrelevante Gegenmaßnahmen wie Authentifizierung und Fingerabdrücke zu ermöglichen. Zusätzlich optimieren wir die multi-bit pPUF-Designs um den Flächenbedarf eines 16-bit-Schlüssels-Generators um 31\% zu verringern. Außerdem entwickeln wir ein Analyse-Framework basierend auf Monte Carlo-Simulationen für pPUFs, mit welchem wir Simulationen und Herstellungs-basierte Analysen durchführen können. Unsere Ergebnisse haben gezeigt, dass die pPUFs die notwendigen Eigenschaften besitzen um erfolgreich als Sicherheitsanwendung eingesetzt zu werden, wie Einzigartigkeit der Signatur und ausreichende Robustheit. Der Betrieb der gedruckten pPUFs war möglich bis zu sehr geringen Betriebsspannungen von nur 0.5 V. Im zweiten Beitrag dieser Arbeit stellen wir einen kompakten Entwurf eines gedruckten physikalischen Zufallsgenerator vor (True Random Number Generator (pTRNG)), welcher unvorhersehbare Schlüssel für kryptographische Funktionen und zufälligen "Authentication Challenges" generieren kann. Der pTRNG Entwurf verbessert Prozess-Variationen unter Verwendung von einer Anpassungsmethode von gedruckten Widerständen, ermöglicht durch die individuelle Konfigurierbarkeit von gedruckten Schaltungen, um die generierten Bits nur von Zufallsrauschen abhängig zu machen, und damit ein echtes Zufallsverhalten zu erhalten. Die Simulationsergebnisse legen nahe, dass die gesamten Prozessvariationen des TRNGs um das 110-fache verbessert werden, und der zufallsgenerierte Bitstream der TRNGs die "National Institute of Standards and Technology Statistical Test Suit"-Tests bestanden hat. Auch hier können wir nachweisen, dass die Betriebsspannungen der TRNGs von mehreren Volt zu nur 0.5 V lagen, wie unsere Charakterisierungsergebnisse der hergestellten TRNGs aufgezeigt haben. Der dritte Beitrag dieser Dissertation ist die Beschreibung der einzigartigen Merkmale von Schaltungsentwurf und Herstellung von gedruckter Elektronik, welche sehr verschieden zu konventionellen Technologien ist, und dadurch eine neuartige Reverse-Engineering (RE)-Methode notwendig macht. Hierfür stellen wir eine robuste RE-Methode vor, welche auf Supervised-Learning-Algorithmen für gedruckte Schaltungen basiert, um die Vulnerabilität gegenüber RE-Attacken zu demonstrieren. Die RE-Ergebnisse zeigen, dass die vorgestellte RE-Methode auf zahlreiche gedruckte Schaltungen ohne viel Komplexität oder teure Werkzeuge angewandt werden kann. Der letzte Beitrag dieser Arbeit ist ein vorgeschlagenes Konzept für eine "one-time programmable" gedruckte Look-up Table (pLUT), welche beliebige digitale Funktionen realisieren kann und Gegenmaßnahmen unterstützt wie Camouflaging, Split-Manufacturing und Watermarking um Attacken auf der Hardware-Ebene zu verhindern. Ein Vergleich des vorgeschlagenen pLUT-Konzepts mit existierenden Lösungen hat gezeigt, dass die pLUT weniger Flächen-bedarf, geringere worst-case Verzögerungszeiten und Leistungsverbrauch hat. Um die Konfigurierbarkeit der vorgestellten pLUT zu verifizieren, wurde es simuliert, hergestellt und programmiert mittels Tintenstrahl-gedruckter elektrisch leitfähiger Tinte um erfolgreich Logik-Gatter wie XNOR, XOR und AND zu realisieren. Die Simulation und Charakterisierungsergebnisse haben die erfolgreiche Funktionalität der pLUT bei Betriebsspannungen von nur 1 V belegt

Asynchronous 3D (Async3D): Design Methodology and Analysis of 3D Asynchronous Circuits

This dissertation focuses on the application of 3D integrated circuit (IC) technology on asynchronous logic paradigms, mainly NULL Convention Logic (NCL) and Multi-Threshold NCL (MTNCL). It presents the Async3D tool flow and library for NCL and MTNCL 3D ICs. It also analyzes NCL and MTNCL circuits in 3D IC. Several FIR filter designs were implement in NCL, MTNCL, and synchronous architecture to compare synchronous and asynchronous circuits in 2D and 3D ICs. The designs were normalized based on performance and several metrics were measured for comparison. Area, interconnect length, power consumption, and power density were compared among NCL, MTNCL, and synchronous designs. The NCL and MTNCL designs showed improvements in all metrics when moving from 2D to 3D. The 3D NCL and MTNCL designs also showed a balanced power distribution in post-layout analysis. This could alleviate the hotspot problem prevalently found in most 3D ICs. NCL and MTNCL have the potential to synergize well with 3D IC technology

A review of advances in pixel detectors for experiments with high rate and radiation

The Large Hadron Collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC interaction points. With the High Luminosity-LHC upgrade now in sight, for which the tracking detectors will be completely replaced, new generations of pixel detectors are being devised. They have to address enormous challenges in terms of data throughput and radiation levels, ionizing and non-ionizing, that harm the sensing and readout parts of pixel detectors alike. Advances in microelectronics and microprocessing technologies now enable large scale detector designs with unprecedented performance in measurement precision (space and time), radiation hard sensors and readout chips, hybridization techniques, lightweight supports, and fully monolithic approaches to meet these challenges. This paper reviews the world-wide effort on these developments.Comment: 84 pages with 46 figures. Review article.For submission to Rep. Prog. Phy

Scalable Energy-Recovery Architectures.

Energy efficiency is a critical challenge for today's integrated circuits, especially for high-end digital signal processing and communications that require both high throughput and low energy dissipation for extended battery life. Charge-recovery logic recovers and reuses charge using inductive elements and has the potential to achieve order-of-magnitude improvement in energy efficiency while maintaining high performance. However, the lack of large-scale high-speed silicon demonstrations and inductor area overheads are two major concerns. This dissertation focuses on scalable charge-recovery designs. We present a semi-automated design flow to enable the design of large-scale charge-recovery chips. We also present a new architecture that uses in-package inductors, eliminating the area overheads caused by the use of integrated inductors in high-performance charge-recovery chips. To demonstrate our semi-automated flow, which uses custom-designed standard-cell-like dynamic cells, we have designed a 576-bit charge-recovery low-density parity-check (LDPC) decoder chip. Functioning correctly at clock speeds above 1 GHz, this prototype is the first-ever demonstration of a GHz-speed charge-recovery chip of significant complexity. In terms of energy consumption, this chip improves over recent state-of-the-art LDPCs by at least 1.3 times with comparable or better area efficiency. To demonstrate our architecture for eliminating inductor overheads, we have designed a charge-recovery LDPC decoder chip with in-package inductors. This test-chip has been fabricated in a 65nm CMOS flip-chip process. A custom 6-layer FC-BGA package substrate has been designed with 16 inductors embedded in the fifth layer of the package substrate, yielding higher Q and significantly improving area efficiency and energy efficiency compared to their on-chip counterparts. From measurements, this chip achieves at least 2.3 times lower energy consumption with better area efficiency over state-of-the-art published designs.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/116653/1/terryou_1.pd

NOVEL RESOURCE EFFICIENT CIRCUIT DESIGNS FOR REBOOTING COMPUTING

CMOS based computing is reaching its limits. To take computation beyond Moores law (the number of transistors and hence processing power on a chip doubles every 18 months to 3 years) requires research explorations in (i) new materials, devices, and processes, (ii) new architectures and algorithms, (iii) new paradigm of logic bit representation. The focus is on fundamental new ways to compute under the umbrella of rebooting computing such as spintronics, quantum computing, adiabatic and reversible computing. Therefore, this thesis highlights explicitly Quantum computing and Adiabatic logic, two new computing paradigms that come under the umbrella of rebooting computing. Quantum computing is investigated for its promising application in high-performance computing. The first contribution of this thesis is the design of two resource-efficient designs for quantum integer division. The first design is based on non-restoring division algorithm and the second one is based on restoring division algorithm. Both the designs are compared and shown to be superior to the existing work in terms of T-count and T-depth. The proliferation of IoT devices which work on low-power also has drawn interests to the rebooting computing. Hence, the second contribution of this thesis is proving that Adiabatic Logic is a promising candidate for implementation in IoT devices. The adiabatic logic family called Symmetric Pass Gate Adiabatic Logic (SPGAL) is implemented in PRESENT-80 lightweight algorithm. Adiabatic Logic is extended to emerging transistor devices

Simulation and Modeling of Silicon Based Emerging Nanodevices: From Device to Circuit Level

Nanostructure based devices are very promising candidates for the emerging nanotechnologies with advantage in terms of power consumption and functional density. Nanowire Field Effect Transistor (NWFET) and Single Electron Transistor (SET) are the focus of this work. The serious challenges faced by the MOSFET due to scaling limits can be solved by these devices. NWFET provides better gate control and overcomes the short channel effects. SET operates in the quantum confinement regime where the basic operation of MOSFET becomes a challenge. SET works better when the dimensions are small encouraging the process of scaling down. Because of these characteristics of the nanodevices, they have achieved a huge interest from the viewpoint of theoretical as well as applied electronics. The studies focus on the understanding of the basic transport characteristics of the devices. The necessity is to develop a model which is efficient, can be used at circuit level and also provides physical insights of the device. The first part of this work focuses on developing the model for SET and to implement it at the circuit level. The transport properties of SET are studied through quantum simulations. The behavioral characterization of the device is performed and the effect of different device parameters on the transport is studied. Furthermore, the impact of gate voltage is analyzed which modulates the current by shifting the energy levels of the device. After observing the transport through SET, a model is developed that efficiently evaluates the IV characteristics of the device. The quantum simulations are used as reference and a huge computational over-head is achieved while maintaining accuracy. Then the model is implemented in hardware descriptive language showing its functional variability at circuit level by designing some logic circuits like AND, OR and FA. In the second part, the performance of the nanoarrays based on NWFET is characterized. A device level model is developed to evaluate the gate capacitance and drain current of NWFET. Starting from the output of the model, in-house simulator is modified and used to evaluate the switching activity of the devices in nanoarray. A nanoarray implementation for bio-sequence alignment based on a systolic array is realized and its essential performance is evaluated. The power consumption, area and performance of the nanoarray implementation are compared with CMOS implementation. A wide solution space can be explored to find the optimal solution trading power and performance and considering the technological limitations of a realistic implementation

Function Implementation in a Multi-Gate Junctionless FET Structure

Title from PDF of title page, viewed September 18, 2023Dissertation advisor: Mostafizur RahmanVitaIncludes bibliographical references (pages 95-117)Dissertation (Ph.D.)--Department of Computer Science and Electrical Engineering, Department of Physics and Astronomy. University of Missouri--Kansas City, 2023This dissertation explores designing and implementing a multi-gate junctionless field-effect transistor (JLFET) structure and its potential applications beyond conventional devices. The JLFET is a promising alternative to conventional transistors due to its simplified fabrication process and improved electrical characteristics. However, previous research has focused primarily on the device's performance at the individual transistor level, neglecting its potential for implementing complex functions. This dissertation fills this research gap by investigating the function implementation capabilities of the JLFET structure and proposing novel circuit designs based on this technology. The first part of this dissertation presents a comprehensive review of the existing literature on JLFETs, including their fabrication techniques, operating principles, and performance metrics. It highlights the advantages of JLFETs over traditional metal-oxide-semiconductor field-effect transistors (MOSFETs) and discusses the challenges associated with their implementation. Additionally, the review explores the limitations of conventional transistor technologies, emphasizing the need for exploring alternative device architectures. Building upon the theoretical foundation, the dissertation presents a detailed analysis of the multi-gate JLFET structure and its potential for realizing advanced functions. The study explores the impact of different design parameters, such as channel length, gate oxide thickness, and doping profiles, on the device performance. It investigates the trade-offs between power consumption, speed, and noise immunity, and proposes design guidelines for optimizing the function implementation capabilities of the JLFET. To demonstrate the practical applicability of the JLFET structure, this dissertation introduces several novel circuit designs based on this technology. These designs leverage the unique characteristics of the JLFET, such as its steep subthreshold slope and improved on/off current ratio, to implement complex functions efficiently. The proposed circuits include arithmetic units, memory cells, and digital logic gates. Detailed simulations and analyses are conducted to evaluate their performance, power consumption, and scalability. Furthermore, this dissertation explores the potential of the JLFET structure for emerging technologies, such as neuromorphic computing and bioelectronics. It investigates how the JLFET can be employed to realize energy-efficient and biocompatible devices for applications in artificial intelligence and biomedical engineering. The study investigates the compatibility of the JLFET with various materials and substrates, as well as its integration with other functional components. In conclusion, this dissertation contributes to the field of nanoelectronics by providing a comprehensive investigation into the function implementation capabilities of the multi-gate JLFET structure. It highlights the potential of this device beyond its individual transistor performance and proposes novel circuit designs based on this technology. The findings of this research pave the way for the development of advanced electronic systems that are more energy-efficient, faster, and compatible with emerging applications in diverse fields.Introduction -- Literature review -- Crosstalk principle -- Experiment of crosstalk -- Device architecture -- Simulation & results -- Conclusio