Coherent modulation up to 100 GBd 16QAM using silicon-organic hybrid (SOH) devices

We demonstrate the generation of higher-order modulation formats using silicon-based inphase/quadrature (IQ) modulators at symbol rates of up to 100 GBd. Our devices exploit the advantages of silicon-organic hybrid (SOH) integration, which combines silicon-on-insulator waveguides with highly efficient organic electro-optic (EO) cladding materials to enable small drive voltages and sub-millimeter device lengths. In our experiments, we use an SOH IQ modulator with a {\pi}-voltage of 1.6 V to generate 100 GBd 16QAM signals. This is the first time that the 100 GBd mark is reached with an IQ modulator realized on a semiconductor substrate, leading to a single-polarization line rate of 400 Gbit/s. The peak-to-peak drive voltages amount to 1.5 Vpp, corresponding to an electrical energy dissipation in the modulator of only 25 fJ/bit

Compact and Efficient Millimetre-Wave Circuits for Wideband Applications

Radio systems, along with the ever increasing processing power provided by computer technology, have altered many aspects of our society over the last century. Various gadgets and integrated electronics are found everywhere nowadays; many of these were science-fiction only a few decades ago. Most apparent is perhaps your ``smart phone'', possibly kept within arm's reach wherever you go, that provides various services, news updates, and social networking via wireless communications systems. The frameworks of the fifth generation wireless system is currently being developed worldwide. Inclusion of millimetre-wave technology promise high-speed piconets, wireless back-haul on pencil-beam links, and further functionality such as high-resolution radar imaging. This thesis addresses the challenge to provide signals at carrier frequencies in the millimetre-wave spectrum, and compact integrated transmitter front-ends of sub-wavelength dimensions. A radio frequency pulse generator, i.e. a ``wavelet genarator'', circuit is implemented using diodes and transistors in III--V compound semiconductor technology. This simple but energy-efficient front-end circuit can be controlled on the time-scale of picoseconds. Transmission of wireless data is thereby achieved at high symbol-rates and low power consumption per bit. A compact antenna is integrated with the transmitter circuit, without any intermediate transmission line. The result is a physically small, single-chip, transmitter front-end that can output high equivalent isotropically radiated power. This element radiation characteristic is wide-beam and suitable for array implementations

Electronic Photonic Integrated Circuits and Control Systems

Photonic systems can operate at frequencies several orders of magnitude higher than electronics, whereas electronics offers extremely high density and easily built memories. Integrated photonic-electronic systems promise to combine advantage of both, leading to advantages in accuracy, reconfigurability and energy efficiency. This work concerns of hybrid and monolithic electronic-photonic system design. First, a high resolution voltage supply to control the thermooptic photonic chip for time-bin entanglement is described, in which the electronics system controller can be scaled with more number of power channels and the ability to daisy-chain the devices. Second, a system identification technique embedded with feedback control for wavelength stabilization and control model in silicon nitride photonic integrated circuits is proposed. Using the system, the wavelength in thermooptic device can be stabilized in dynamic environment. Third, the generation of more deterministic photon sources with temporal multiplexing established using field programmable gate arrays (FPGAs) as controller photonic device is demonstrated for the first time. The result shows an enhancement to the single photon output probability without introducing additional multi-photon noise. Fourth, multiple-input and multiple-output (MIMO) control of a silicon nitride thermooptic photonic circuits incorporating Mach Zehnder interferometers (MZIs) is demonstrated for the first time using a dual proportional integral reference tracking technique. The system exhibits improved performance in term of control accuracy by reducing wavelength peak drift due to internal and external disturbances. Finally, a monolithically integrated complementary metal oxide semiconductor (CMOS) nanophotonic segmented transmitter is characterized. With segmented design, the monolithic Mach Zehnder modulator (MZM) shows a low link sensitivity and low insertion loss with driver flexibility

Electro-Photonic Transmitter Front-Ends for High-Speed Fiber-Optic Communication

This thesis addresses basic scientific research in the field of transmitter front-end circuits for electro-optical data communication. First, the theoretical fundamentals are presented and analyzed. Based on the theoretical considerations, conceptual circuit designs are studied. Finally, in order to prove the described concepts, the circuits were experimentally characterized and subsequently compared to other works in the literature. The analysis covers key theoretical aspects regarding transmitter front-end circuits. It starts from the basic physical effects inside a transistor and ends with the design of high-swing modulator drivers. Furthermore, it comprises the fundamentals of optical modulators as well as the integration of the electrical driver with the modulator. First, the concept of a basic monolithically integrated transmitter consisting of a Mach-Zehnder modulator (MZM) and an electrical driver is presented. The circuit reaches a bit-error-free data rate of 37 Gb/s, which is a record among other monolithically integrated transmitters reported in the literature. It was shown that by employing a high-swing driver, high extinction ratios (ER) can be achieved (namely 8.4 dB at 25 Gb/s and 7.6 dB at 35 Gb/s) while using short-length phase shifters (2 mm of length). It was therefore proved that one of the main drawbacks of the MZM-based transmitters, namely their large chip area, can be mitigated by using high-swing drivers, however without sacrificing the ER. Next, an improved modulator driver design is investigated, the focus of the study being the linearity. In addition to a high peak-to-peak differential output voltage swing of 7.2 Vpp,d, the driver achieves record-low total harmonic distortion (THD) values of 1% (at 1 GHz, for the output swing of 6.5 Vpp,d) and 1.7% (at 1 GHz, for the output swing of 7 Vpp,d). Moreover, the driver reaches a bandwidth of 61.2 GHz and shows a high power efficiency when relating its DC power consumption to its output voltage swing. The achievement of a high linearity and bandwidth without an increased power consumption is due to the fact that the bias currents of the emitter-follower (EF) stages are provided by means of resistors instead of the conventional current sources. The two approaches were first analyzed mathematically and subsequently compared by means of circuit simulations. It was shown that the proposed approach for the realization of the EFs – i.e. by means of resistors – allows a reduction of the DC power consumption by 19% compared to the current-source approach for an equivalent performance in terms of linearity and bandwidth. Finally, a modulator driver concept suitable for higher-order modulation formats is studied, namely the 8-level pulse amplitude modulation (PAM-8). The circuit was realized as a 3-bit digital-to-analog converter (DAC), thus being able to yield 8-level output signals. Moreover, the circuit is able to function as a PAM-4 driver as well, thanks to the tunable tail currents of the DAC core. It achieves a symbol rate of 50 Gbaud, which corresponds to a bit rate of 150 Gb/s for the PAM-8 modulation and 100 Gb/s for PAM-4. The study showed that a modulator driver can be realized that is able to switch between different modulation formats (namely PAM-8 and PAM-4), without requiring extra power or additional circuit parts. Moreover, the use of on-chip single-to-differential converters (SDCs) targets the relaxation of the requirements on the stages that precede the driver. Finally, relating its DC power consumption (590 mW, including the SDCs) to its output voltage swing (4 Vpp,d), the driver shows one of the highest power efficiencies among PAM modulator drivers in the literature

Silicon-Organic Hybrid (SOH) Mach-Zehnder Modulators for 100 Gbit/s On-Off Keying

Electro-optic modulators for high-speed on-off keying (OOK) are key components of short- and mediumreach interconnects in data-center networks. Besides small footprint and cost-efficient large-scale production, small drive voltages and ultra-low power consumption are of paramount importance for such devices. Here we demonstrate that the concept of silicon-organic hybrid (SOH) integration is perfectly suited for meeting these challenges. The approach combines the unique processing advantages of large-scale silicon photonics with unrivalled electro-optic (EO) coefficients obtained by molecular engineering of organic materials. In our proof-of-concept experiments, we demonstrate generation and transmission of OOK signals with line rates of up to 100 Gbit/s using a 1.1 mm-long SOH Mach-Zehnder modulator (MZM) which features a {\pi}-voltage of only 0.9 V. This experiment represents not only the first demonstration of 100 Gbit/s OOK on the silicon photonic platform, but also leads to the lowest drive voltage and energy consumption ever demonstrated at this data rate for a semiconductor-based device. We support our experimental results by a theoretical analysis and show that the nonlinear transfer characteristic of the MZM can be exploited to overcome bandwidth limitations of the modulator and of the electric driver circuitry. The devices are fabricated in a commercial silicon photonics line and can hence be combined with the full portfolio of standard silicon photonic devices. We expect that high-speed power-efficient SOH modulators may have transformative impact on short-reach optical networks, enabling compact transceivers with unprecedented energy efficiency that will be at the heart of future Ethernet interfaces at Tbit/s data rates

High-speed and Robust Integrated Silicon Nanophotonics for On-Chip Interconnects

Optical interconnects offer advantages over electrical interconnects such as higher bandwidth, low power, reduced interconnects delay, and immunity to electro-magnetic interference and signal crosstalk. However, in order for optical interconnects to be widely adopted, the technology must be made cost effective and must be simple to implement with CMOS electronics. Silicon photonics offers a great promise due to its inexpensive material and its compatibility with the current CMOS fabrication technology. Moreover, Silicon as a platform has the ability to integrate with different types of the optical components such as photodetector, modulator, light source, and waveguide to form a photonics integrated circuit. The goal of this work is to develop and fabricate devices that utilize a hybrid electronic-photonic integration to enable high performance optoelectronic computing and communication systems that overcome the barriers of electronics and dramatically enhance the performance of circuits and systems. We experimentally demonstrate a novel broadband optical time division multiplexer (OTDM) on a silicon chip. The system has a footprint× 700 micrometer and is inherently broadband with a bandwidth of over 100nm making it suitable for high-speed optical networks on chip. Also, we propose and fabricate a novel design to demultiplex the high bit rates of OTDM data using two differentially operated 5Gb/s modulators. Moreover, we propose a high-speed hybrid optical-time-division-multiplexing (OTDM) and wavelength-division-multiplexing (WDM) system that seamlessly generates high bit-rate data (\u3e200Gbit/s) from a low speed (5Gbit/s) quantum-dot mode locked laser pulse source. By utilizing time and wavelength domains, the proposed design is a promising solution for high-speed, compact and low-power consumption optical networks on chip. And finally, we experimentally demonstrate a robust, low insertion loss, compact Silicon ring resonator electro-optic modulator for Binary Phase Shift Key (BPSK) coding/decoding that encodes data in the phase of light. Our design improves significantly over recently demonstrated PSK modulator designs in terms of insertion loss and stability