53 research outputs found
Microelectromechanical Systems for Wireless Radio Front-ends and Integrated Frequency References.
Microelectromechanical systems (MEMS) have great potential in realizing chip-scale integrated devices for energy-efficient analog spectrum processing. This thesis presents the development of a new class of MEMS resonators and filters integrated with CMOS readout circuits for RF front-ends and integrated timing applications. Circuit-level innovations coupled with new device designs allowed for realizing integrated systems with improved performance compared to standalone devices reported in the literature.
The thesis is comprised of two major parts. The first part of the thesis is focused on developing integrated MEMS timing devices. Fused silica is explored as a new structural material for fabricating high-Q vibrating micromechanical resonators. A piezoelectric-on-silica MEMS resonator is demonstrated with a high Q of more than 20,000 and good electromechanical coupling. A low phase noise CMOS reference oscillator is implemented using the MEMS resonator as a mechanical frequency reference. Temperature-stable operation of the MEMS oscillator is realized by ovenizing the platform using an integrated heater. In an alternative scheme, the intrinsic temperature sensitivity of MEMS resonators is utilized for temperature sensing, and active compensation for MEMS oscillators is realized by oven-control using a phase-locked loop (PLL). CMOS circuits are implemented for realizing the PLL-based low-power oven-control system. The active compensation technique realizes a MEMS oscillator with an overall frequency drift within +/- 4 ppm across -40 to 70 °C, without the need for calibration. The CMOS PLL circuits for oven-control is demonstrated with near-zero phase noise invasion on the MEMS oscillators. The properties of PLL-based compensation for realizing ultra-stable MEMS frequency references are studied.
In the second part of the thesis, RF MEMS devices, including tunable capacitors, high-Q inductors, and ohmic switches, are fabricated using a surface micromachined integrated passive device (IPD) process. Using this process, an integrated ultra-wideband (UWB) filter has been demonstrated, showing low loss and a small form factor. To further address the issue of narrow in-band interferences in UWB communication, a tunable MEMS bandstop filter is integrated with the bandpass filter with more than an octave frequency tuning range. The bandstop filter can be optionally switched off by employing MEMS ohmic switches co-integrated on the same chip.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/109069/1/zzwu_1.pd
Advanced CMOS Integrated Circuit Design and Application
The recent development of various application systems and platforms, such as 5G, B5G, 6G, and IoT, is based on the advancement of CMOS integrated circuit (IC) technology that enables them to implement high-performance chipsets. In addition to development in the traditional fields of analog and digital integrated circuits, the development of CMOS IC design and application in high-power and high-frequency operations, which was previously thought to be possible only with compound semiconductor technology, is a core technology that drives rapid industrial development. This book aims to highlight advances in all aspects of CMOS integrated circuit design and applications without discriminating between different operating frequencies, output powers, and the analog/digital domains. Specific topics in the book include: Next-generation CMOS circuit design and application; CMOS RF/microwave/millimeter-wave/terahertz-wave integrated circuits and systems; CMOS integrated circuits specially used for wireless or wired systems and applications such as converters, sensors, interfaces, frequency synthesizers/generators/rectifiers, and so on; Algorithm and signal-processing methods to improve the performance of CMOS circuits and systems
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Towards Ultra-High Resolution Mode-localised MEMS Sensors
Sensors employing mode localisation in weakly coupled resonators have been increasingly viewed as an alternative to resonant frequency shift based sensing. Much theory has been proposed highlighting the advantages of these sensors including the increased sensitivity and the promise of common mode rejection to first order environmental variations. This has led to the development of proof-of-concept sensors to sense physical quantities such as displacement, charge, mass, and acceleration. However, practical aspects of developing a sensor starting from design of a closed-loop implementation to understanding different operating regions with the aim of resolution analysis and noise optimisation have yet to be explored in depth. This work delves into these practical aspects of developing ultra-high resolution mode-localised MEMS sensors.
First, the mechanical sensor is integrated with a prototype closed-loop oscillator along with the interface electronics on a printed circuit board. Key aspects of sensors such as stability, noise floor, and bandwidth are analysed using this integrated sensor system. A critical observation is made on the improvement of stability of the amplitude ratio output metric over its frequency shift counterpart at large integration times therefore, highlighting the advantage of common mode rejection to environmental factors. The common mode rejection abilities of both mechanically and electrically coupled devices are next studied at different operating regions. These are then compared to the state-of-the-art differential frequency measurements. Amplitude ratio measurements in an electrically coupled device showed an order of magnitude better rejection to temperature variations over a mechanically coupled device. Furthermore, amplitude ratio measurements in the electrically coupled device were on par with the rejection offered by the differential frequency output in the same device. This result highlights the advantage of amplitude ratio measurements that are able to achieve the same common mode rejection with the help of a single oscillator instead of the two oscillators required in differential frequency output measurements.
The resolution of the mode-localised sensor is then explored with the purpose of optimising operating regions to achieve the best noise figure. A detailed theoretical analysis is first undertaken to optimise the amplitude ratio noise in different noise dominant regimes. It is predicted that the resonator-based noise (such as thermo-mechanical noise) can be optimised be operating at an amplitude ratio of and the electronic sourced noises can be optimised at an amplitude ratio of in a single ended resonator drive configuration. Additionally, both sources of noise are predicted to decrease with the decrease of the coupling stiffness. This result is then validated using experimental data to verify the claim. A further noise reduction is sought by operating the coupled resonators in the nonlinear domain with interesting observations on the variations of the amplitude ratio output metric. The phase filtering offered by the bifurcation points in the nonlinear domain is utilised to further improve the noise by 4 times.
Finally, a mode-localised accelerometer design is proposed that employs a novel differential amplitude ratio output metric. Noise optimisation techniques are then used to optimise this novel output metric. A noise floor of g/\sqrt{\mbox{Hz}} with a stability of g is achieved thus, benchmarking the mode-localised accelerometer favourably with respect to other high-end commercial MEMS accelerometers. Additionally, their potential is demonstrated with a measurement of seismic activity. This measurement is then compared to reference data sourced from an accelerometer from the British Geological Survey. Lastly, suggestions are made to further optimise the resolution in the accelerometer to push the limits of amplitude ratio sensing thereby, putting mode-localised accelerometers at par with the best resonant accelerometers till date.Innovate UK
Natural Environment Research Counci
Optical Gas Sensing: Media, Mechanisms and Applications
Optical gas sensing is one of the fastest developing research areas in laser spectroscopy. Continuous development of new coherent light sources operating especially in the Mid-IR spectral band (QCL—Quantum Cascade Lasers, ICL—Interband Cascade Lasers, OPO—Optical Parametric Oscillator, DFG—Difference Frequency Generation, optical frequency combs, etc.) stimulates new, sophisticated methods and technological solutions in this area. The development of clever techniques in gas detection based on new mechanisms of sensing (photoacoustic, photothermal, dispersion, etc.) supported by advanced applied electronics and huge progress in signal processing allows us to introduce more sensitive, broader-band and miniaturized optical sensors. Additionally, the substantial development of fast and sensitive photodetectors in MIR and FIR is of great support to progress in gas sensing. Recent material and technological progress in the development of hollow-core optical fibers allowing low-loss transmission of light in both Near- and Mid-IR has opened a new route for obtaining the low-volume, long optical paths that are so strongly required in laser-based gas sensors, leading to the development of a novel branch of laser-based gas detectors. This Special Issue summarizes the most recent progress in the development of optical sensors utilizing novel materials and laser-based gas sensing techniques
Reconfigurable Receiver Front-Ends for Advanced Telecommunication Technologies
The exponential growth of converging technologies, including augmented reality, autonomous vehicles, machine-to-machine and machine-to-human interactions, biomedical and environmental sensory systems, and artificial intelligence, is driving the need for robust infrastructural systems capable of handling vast data volumes between end users and service providers. This demand has prompted a significant evolution in wireless communication, with 5G and subsequent generations requiring exponentially improved spectral and energy efficiency compared to their predecessors. Achieving this entails intricate strategies such as advanced digital modulations, broader channel bandwidths, complex spectrum sharing, and carrier aggregation scenarios. A particularly challenging aspect arises in the form of non-contiguous aggregation of up to six carrier components across the frequency range 1 (FR1). This necessitates receiver front-ends to effectively reject out-of-band (OOB) interferences while maintaining high-performance in-band (IB) operation. Reconfigurability becomes pivotal in such dynamic environments, where frequency resource allocation, signal strength, and interference levels continuously change. Software-defined radios (SDRs) and cognitive radios (CRs) emerge as solutions, with direct RF-sampling receivers offering a suitable architecture in which the frequency translation is entirely performed in digital domain to avoid analog mixing issues. Moreover, direct RF- sampling receivers facilitate spectrum observation, which is crucial to identify free zones, and detect interferences. Acoustic and distributed filters offer impressive dynamic range and sharp roll off characteristics, but their bulkiness and lack of electronic adjustment capabilities limit their practicality. Active filters, on the other hand, present opportunities for integration in advanced CMOS technology, addressing size constraints and providing versatile programmability. However, concerns about power consumption, noise generation, and linearity in active filters require careful consideration.This thesis primarily focuses on the design and implementation of a low-voltage, low-power RFFE tailored for direct sampling receivers in 5G FR1 applications. The RFFE consists of a balun low-noise amplifier (LNA), a Q-enhanced filter, and a programmable gain amplifier (PGA). The balun-LNA employs noise cancellation, current reuse, and gm boosting for wideband gain and input impedance matching. Leveraging FD-SOI technology allows for programmable gain and linearity via body biasing. The LNA's operational state ranges between high-performance and high-tolerance modes, which are apt for sensitivityand blocking tests, respectively. The Q-enhanced filter adopts noise-cancelling, current-reuse, and programmable Gm-cells to realize a fourth-order response using two resonators. The fourth-order filter response is achieved by subtracting the individual response of these resonators. Compared to cascaded and magnetically coupled fourth-order filters, this technique maintains the large dynamic range of second-order resonators. Fabricated in 22-nm FD-SOI technology, the RFFE achieves 1%-40% fractional bandwidth (FBW) adjustability from 1.7 GHz to 6.4 GHz, 4.6 dB noise figure (NF) and an OOB third-order intermodulation intercept point (IIP3) of 22 dBm. Furthermore, concerning the implementation uncertainties and potential variations of temperature and supply voltage, design margins have been considered and a hybrid calibration scheme is introduced. A combination of on-chip and off-chip calibration based on noise response is employed to effectively adjust the quality factors, Gm-cells, and resonance frequencies, ensuring desired bandpass response. To optimize and accelerate the calibration process, a reinforcement learning (RL) agent is used.Anticipating future trends, the concept of the Q-enhanced filter extends to a multiple-mode filter for 6G upper mid-band applications. Covering the frequency range from 8 to 20 GHz, this RFFE can be configured as a fourth-order dual-band filter, two bandpass filters (BPFs) with an OOB notch, or a BPF with an IB notch. In cognitive radios, the filter’s transmission zeros can be positioned with respect to the carrier frequencies of interfering signals to yield over 50 dB blocker rejection
Robust low power CMOS methodologies for ISFETs instrumentation
I have developed a robust design methodology in a 0.18 [Mu]m commercial CMOS process
to circumvent the performance issues of the integrated Ions Sensitive Field Effect Transistor
(ISFET) for pH detection. In circuit design, I have developed frequency domain signal
processing, which transforms pH information into a frequency modulated signal. The
frequency modulated signal is subsequently digitized and encoded into a bit-stream of data.
The architecture of the instrumentation system consists of a) A novel front-end averaging
amplifier to interface an array of ISFETs for converting pH into a voltage signal, b) A high
linear voltage controlled oscillator for converting the voltage signal into a frequency
modulated signal, and c) Digital gates for digitizing and differentiating the frequency
modulated signal into an output bit-stream. The output bit stream is indistinguishable to a 1st
order sigma delta modulation, whose noise floor is shaped by +20dB/decade.
The fabricated instrumentation system has a dimension of 1565 [Mu] m 1565 [Mu] m. The chip
responds linearly to the pH in a chemical solution and produces a digital output, with up to an
8-bit accuracy. Most importantly, the fabricated chips do not need any post-CMOS
processing for neutralizing any trapped-charged effect, which can modulate on-chip ISFETs’
threshold voltages into atypical values. As compared to other ISFET-related works in the
literature, the instrumentation system proposed in this thesis can cope with the mismatched
ISFETs on chip for analogue-to-digital conversions. The design methodology is thus very
accurate and robust for chemical sensing
Integrated RF oscillators and LO signal generation circuits
This thesis deals with fully integrated LC oscillators and local oscillator (LO) signal generation circuits. In communication systems a good-quality LO signal for up- and down-conversion in transmitters is needed. The LO signal needs to span the required frequency range and have good frequency stability and low phase noise. Furthermore, most modern systems require accurate quadrature (IQ) LO signals. This thesis tackles these challenges by presenting a detailed study of LC oscillators, monolithic elements for good-quality LC resonators, and circuits for IQ-signal generation and for frequency conversion, as well as many experimental circuits. Monolithic coils and variable capacitors are essential, and this thesis deals with good structures of these devices and their proper modeling. As experimental test devices, over forty monolithic inductors and thirty varactors have been implemented, measured and modeled. Actively synthesized reactive elements were studied as replacements for these passive devices. At first glance these circuits show promising characteristics, but closer noise and nonlinearity analysis reveals that these circuits suffer from high noise levels and a small dynamic range. Nine circuit implementations with various actively synthesized variable capacitors were done. Quadrature signal generation can be performed with three different methods, and these are analyzed in the thesis. Frequency conversion circuits are used for alleviating coupling problems or to expand the number of frequency bands covered. The thesis includes an analysis of single-sideband mixing, frequency dividers, and frequency multipliers, which are used to perform the four basic arithmetical operations for the frequency tone. Two design cases are presented. The first one is a single-sideband mixing method for the generation of WiMedia UWB LO-signals, and the second one is a frequency conversion unit for a digital period synthesizer. The last part of the thesis presents five research projects. In the first one a temperature-compensated GaAs MESFET VCO was developed. The second one deals with circuit and device development for an experimental-level BiCMOS process. A cable-modem RF tuner IC using a SiGe process was developed in the third project, and a CMOS flip-chip VCO module in the fourth one. Finally, two frequency synthesizers for UWB radios are presented
Development and experimental analysis of a micromachined Resonant Gyrocope
This thesis is concerned with the development and experimental analysis of a resonant gyroscope. Initially, this involved the development of a fabrication process suitable for the construction of metallic microstructures, employing a combination of nickel electroforming and sacrificial layer techniques to realise free-standing and self-supporting mechanical elements. This was undertaken and achieved. Simple beam elements of typically 2.7mm x 1mm x 40µm dimensions have been constructed and subject to analysis using laser doppler interferometry. This analysis tool was used to implement a fill modal analysis in order to experimentally derive dynamic parameters. The characteristic resonance frequencies of these cantilevers have been measured, with 3.14kHz, 23.79kHz, 37.94kHz and 71.22kHz being the typical frequencies of the first four resonant modes. Q-factors of 912, 532, 1490 and 752 have been measured for these modes respectively at 0.01mbar ambient pressure. Additionally the mode shapes of each resonance was derived experimentally and found to be in excellent agreement with finite element predictions. A 4mm nickel ring gyroscope structure has been constructed and analysed using both optical analysis tools and electrical techniques. Using laser doppler interferometry the first four out-of-plane modes of the ring structure were found to be typically 9.893 kHz, 11.349 kHz, 11.418 kHz and 13.904 kHz with respective Q-factors of 1151, 1659, 1573 and 1407 at 0.01 mbar ambient pressure. Although electrical measurements were found to be obscured through cross coupling between drive and detection circuitry, the in-plane operational modes of the gyroscope were sucessfully determined. The Cos2Ө and Sin2Ө operational modes were measured at 36.141 kHz and 36.346 kHz, highlighting a frequency split of 205kHz. Again all experimentally derived modal parameters were in good agreement with finite element predictions. Furthermore, using the analysis model, the angular resolution of the gyroscope has been predicted to be approximately 4.75º/s
EUROSENSORS XVII : book of abstracts
Fundação Calouste Gulbenkien (FCG).Fundação para a Ciência e a Tecnologia (FCT)
Development of a monolithic near-field optomechanical system
In the same year as Einstein's annus mirabilis, English engineer and physicist John Flemming patented the first rectifying diode, which he called the "Flemming valve". Einstein's work on the photoelectric effect would change our understanding of the nature of light - a pivotal moment in the development of quantum theory. Flemming's diode would transform our world as well, often pointed to as the beginning of modern electronics. These ideas, born in the same moment, have remained entwined. Quantum theory has been fundamental to transistor development, and that, in turn, led to the computer revolution and accompanying development of silicon manufacturing.
The theoretical and technological gifts these ideas have accumulated over the past hundred years are now laid to bare in the field of cavity optomechanics. The silicon technology that owes its very existence to quantum theory is now leveraged to test the limitations of theory and perhaps to exploit quantum resources for a new class of sensors. Micro-, and even nano-scale, optical cavities are coupled to commensurately miniaturized mechanical oscillators, where strong radiation pressure mediated interactions between their corresponding modes can be realized. The fluctuating position of a mechanical element is imprinted on the phase of light circulating within the cavity, while the varying amplitude of the light alters its momentum. Quantum fluctuations are imprinted on the mechanical element by light within the cavity, establishing correlations between its phase and amplitude. Utilizing the optomechanical system developed in this thesis work we are able to observe the signature of these induced correlations, even in the presence of thermal noise at room-temperature. Moreover, we demonstrate the principle by which correlations can be used to cancel measurement back-action, producing a quantum-enhanced sensitivity to external forces. The system in question is also demonstrated to achieve an imprecision more than three orders of magnitude below that at the standard quantum, at room-temperature, which is unprecedented.
A strong radiation pressure interaction between a micron-scale mechanical element and an optical cavity has been achieved by taking advantage of many of the powerful tools developed in the context of building modern computers. Using transistor technology in this new context we engineer an optomechanical system that exhibits an exceptionally large contribution of back-action relative to thermal noise. In addition to observing this back-action signature at ambient temperatures, the large interaction strength is applied to the task of laser cooling with a measurement-based feedback scheme. In this framework, we demonstrate the ability to reduce the thermal occupation of a cryogenically cooled mechanical mode by an additional three orders of magnitude, to a mean occupancy of just 5.3 phonons
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