11,452 research outputs found
Simulating CCDs for the Chandra Advanced CCD Imaging Spectrometer
We have implemented a Monte Carlo algorithm to model and predict the response
of various kinds of CCDs to X-ray photons and minimally-ionizing particles and
have applied this model to the CCDs in the Chandra X-ray Observatory's Advanced
CCD Imaging Spectrometer. This algorithm draws on empirical results and
predicts the response of all basic types of X-ray CCD devices. It relies on new
solutions of the diffusion equation, including recombination, to predict the
radial charge cloud distribution in field-free regions of CCDs. By adjusting
the size of the charge clouds, we can reproduce the event grade distribution
seen in calibration data. Using a model of the channel stops developed here and
an insightful treatment of the insulating layer under the gate structure
developed at MIT, we are able to reproduce all notable features in ACIS
calibration spectra.
The simulator is used to reproduce ground and flight calibration data from
ACIS, thus confirming its fidelity. It can then be used for a variety of
calibration tasks, such as generating spectral response matrices for spectral
fitting of astrophysical sources, quantum efficiency estimation, and modeling
of photon pile-up.Comment: 42 pages, 22 figures; accepted for publication in Nuclear Instruments
and Methods in Physics Research, Section A; paper with high-quality figures
can be found at ftp://ftp.astro.psu.edu/pub/townsley/simulator.p
Product assurance technology for custom LSI/VLSI electronics
The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification
Electronic spin transport in graphene field effect transistors
Spin transport experiments in graphene, a single layer of carbon atoms,
indicate spin relaxation times that are significantly shorter than the
theoretical predictions. We investigate experimentally whether these short spin
relaxation times are due to extrinsic factors, such as spin relaxation caused
by low impedance contacts, enhanced spin flip processes at the device edges or
the presence of an aluminium oxide layer on top of graphene in some samples.
Lateral spin valve devices using a field effect transistor geometry allowed for
the investigation of the spin relaxation as a function of the charge density,
going continuously from metallic hole to electron conduction (charge densities
of cm) via the Dirac charge neutrality point (). The results are quantitatively described by a one dimensional spin
diffusion model where the spin relaxation via the contacts is taken into
account. Spin valve experiments for various injector/detector separations and
spin precession experiments reveal that the longitudinal (T) and the
transversal (T) relaxation times are similar. The anisotropy of the spin
relaxation times and , when the spins are injected
parallel or perpendicular to the graphene plane, indicates that the effective
spin orbit fields do not lie exclusively in the two dimensional graphene plane.
Furthermore, the proportionality between the spin relaxation time and the
momentum relaxation time indicates that the spin relaxation mechanism is of the
Elliott-Yafet type. For carrier mobilities of 2-5 cm2^/Vs and
for graphene flakes of 0.1-2 m in width, we found spin relaxation times of
the order of 50-200 ps, times which appear not to be determined by the
extrinsic factors mentioned above.Comment: 11 pages, 13 figure
Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics
Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis
Impact of parameter variations on circuits and microarchitecture
Parameter variations, which are increasing along with advances in process technologies, affect both timing and power. Variability must be considered at both the circuit and microarchitectural design levels to keep pace with performance scaling and to keep power consumption within reasonable limits. This article presents an overview of the main sources of variability and surveys variation-tolerant circuit and microarchitectural approaches.Peer ReviewedPostprint (published version
Single-Electron Traps: A Quantitative Comparison of Theory and Experiment
We have carried out a coordinated experimental and theoretical study of
single-electron traps based on submicron aluminum islands and aluminum oxide
tunnel junctions. The results of geometrical modeling using a modified version
of MIT's FastCap were used as input data for the general-purpose
single-electron circuit simulator MOSES. The analysis indicates reasonable
quantitative agreement between theory and experiment for those trap
characteristics which are not affected by random offset charges. The observed
differences between theory and experiment (ranging from a few to fifty percent)
can be readily explained by the uncertainty in the exact geometry of the
experimental nanostructures.Comment: 17 pages, 21 figures, RevTex, eps
Diffusive Transport in Quasi-2D and Quasi-1D Electron Systems
Quantum-confined semiconductor structures are the cornerstone of modern-day
electronics. Spatial confinement in these structures leads to formation of
discrete low-dimensional subbands. At room temperature, carriers transfer among
different states due to efficient scattering with phonons, charged impurities,
surface roughness and other electrons, so transport is scattering-limited
(diffusive) and well described by the Boltzmann transport equation. In this
review, we present the theoretical framework used for the description and
simulation of diffusive electron transport in quasi-two-dimensional and
quasi-one-dimensional semiconductor structures. Transport in silicon MOSFETs
and nanowires is presented in detail.Comment: Review article, to appear in Journal of Computational and Theoretical
Nanoscienc
Single Particle Transport in Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor
The single particle tunneling in a vertical stack consisting of monolayers of
two-dimensional semiconductors is studied theoretically and its application to
a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect
Transistor (Thin-TFET) is proposed and described. The tunneling current is
calculated by using a formalism based on the Bardeen's transfer Hamiltonian,
and including a semi-classical treatment of scattering and energy broadening
effects. The misalignment between the two 2D materials is also studied and
found to influence the magnitude of the tunneling current, but have a modest
impact on its gate voltage dependence. Our simulation results suggest that the
Thin-TFETs can achieve very steep subthreshold swing, whose lower limit is
ultimately set by the band tails in the energy gaps of the 2D materials
produced by energy broadening. The Thin-TFET is thus very promising as a low
voltage, low energy solid state electronic switch
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