An Icepak-PSpice Co-Simulation Method to Study the Impact of Bond Wires Fatigue on the Current and Temperature Distribution of IGBT Modules under Short-Circuit

Bond wires fatigue is one of the dominant failure mechanisms of IGBT modules. Prior-art research mainly focuses on its impact on the end-of-life failure, while its effect on the short-circuit capability of IGBT modules is still an open issue. This paper proposes a new electro-thermal simulation approach enabling analyze the impact of the bond wires fatigue on the current and temperature distribution on IGBT chip surface under short-circuit. It is based on an Icepack-PSpice co-simulation by taking the advantage of both a finite element thermal model and an advanced PSpice-based multi-cell IGBT model. A study case on a 1700 V/1000 A IGBT module demonstrates the effectiveness of the proposed simulation method

Nematic Liquid Crystal Carbon Nanotube Composite Materials for Designing RF Switching Devices

Radio frequency microelectromechanical systems (RF MEMS) devices are microdevices used to switch or modify signals from the RF to millimeter wave (mmWave) frequency range. Liquid crystals (LCs) are widely used as electro-optic modulators for display devices. An electric field-induced electrical conductivity modulation of pure LC media is quite low which makes it difficult to use for RF MEMS switching applications. Currently, RF MEMS devices are characterized as an excellent option between solid-state and electromechanical RF switches to provide high isolation, low insertion loss, low power usage, excellent return loss, and large frequency band. However, commercial usage is low due to their lower switching speed, reliability, and repeatability. This research presents an electrical conductivity enhancement through the use of carbon nanotube (CNT) doping of LCs to realize a high-performance RF LC-CNT switching device. This thesis presents simulations of an RF switch using a coplanar waveguide (CPW) with a LC-CNT composite called 4-Cyano-4’-pentylbiphenyl multi-walled nanotube (5CB-MWNT) that is suitable for RF applications. The electrical conductivity modulation and RF switch performance of the 5CB-MWNT composite is determined using Finite Element Analysis (FEA). The simulations will present data on the coplanar waveguide’s s-parameters at the input and output ports S11 and S21 to measure return and insertion loss respectively, two key parameters for determining any RF switch’s performance. Furthermore, this thesis presents applications for improving tunable phased antenna arrays using the LC-CNT composite to allow for beam steering with high-gain and directivity to provide a broad 3D scannable coverage of an area. Tunable antennas are an important characteristic for 5G applications to achieve an optimal telecommunication system to prevent overcrowding of antennas and reduce overall system costs. This research investigates various device geometries with 5CB-MWNT to realize the best performing RF device for RF applications and 5G telecommunication systems. This research presents return and insertion loss data for three waveguide device configurations: CPW, coplanar waveguide grounded (CPWG), and finite ground coplanar waveguide grounded (FG-CPWG). The best results are shown using the CPW configuration. The return loss for the LC-CNT device showed a 5 dB improvement from -7.5 dB to -12.5 dB when using the LC-CNT signal line device. The insertion loss for this configuration showed a much more consistent 0 to -0.3 dB insertion loss value with much less noise when using the LC-CNT device compared to the -0.3 to -1 dB insertion loss value with heavy noise when using the Au signal line device. For the other two configurations the return loss and insertion loss value stayed the same indicating there is no loss in performance when using the LC-CNT switching mechanism. This is ideal due to the benefits that the LC-CNT switching mechanism provides like device reliability and increased switching speeds

Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC

The light output of deep ultraviolet (UV-C) AlGaN light-emitting diodes (LEDs) is limited due to their poor light extraction efficiency (LEE). To improve the LEE of AlGaN LEDs, we developed a fabrication technology to process AlGaN LEDs grown on SiC into thin-film flip-chip LEDs (TFFC LEDs) with high LEE. This process transfers the AlGaN LED epi onto a new substrate by wafer-to-wafer bonding, and by removing the absorbing SiC substrate with a highly selective SF6 plasma etch that stops at the AlN buffer layer. We optimized the inductively coupled plasma (ICP) SF6 etch parameters to develop a substrate-removal process with high reliability and precise epitaxial control, without creating micromasking defects or degrading the health of the plasma etching system. The SiC etch rate by SF6 plasma was ~46 \mu m/hr at a high RF bias (400 W), and ~7 \mu m/hr at a low RF bias (49 W) with very high etch selectivity between SiC and AlN. The high SF6 etch selectivity between SiC and AlN was essential for removing the SiC substrate and exposing a pristine, smooth AlN surface. We demonstrated the epi-transfer process by fabricating high light extraction TFFC LEDs from AlGaN LEDs grown on SiC. To further enhance the light extraction, the exposed N-face AlN was anisotropically etched in dilute KOH. The LEE of the AlGaN LED improved by ~3X after KOH roughening at room temperature. This AlGaN TFFC LED process establishes a viable path to high external quantum efficiency (EQE) and power conversion efficiency (PCE) UV-C LEDs.Comment: 22 pages, 6 figures. (accepted in Semiconductor Science and Technology, SST-105156.R1 2018

Integrated polymer photonics : fabrication, design, characterization and applications

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Chemomechanics of ionically conductive ceramics for electrical energy conversion and storage

Functional materials for energy conversion and storage exhibit strong coupling between electrochemistry and mechanics. For example, ceramics developed as electrodes for both solid oxide fuel cells and batteries exhibit cyclic volumetric expansion upon reversible ion transport. Such chemomechanical coupling is typically far from thermodynamic equilibrium, and thus is challenging to quantify experimentally and computationally. In situ measurements and atomistic simulations are under rapid development to explore how this coupling can be used to potentially improve both device performance and durability. Here, we review the commonalities of coupling between electrochemical and mechanical states in fuel cell and battery materials, illustrating with specific cases the progress in materials processing, in situ characterization, and computational modeling and simulation. We also highlight outstanding questions and opportunities in these applications – both to better understand the limiting mechanisms within the materials and to significantly advance the durability and predictability of device performance required for renewable energy conversion and storage.United States. Dept. of Energy (Basic Energy Sciences Division of Materials Sciences and Engineering, grant DE-SC0002633)United States. Dept. of Energy (Office of Science, Graduate Fellowship Program (DOE SCGF))United States. American Recovery and Reinvestment Act of 2009 (ORISE-ORAU, contract no. DE-AC05-06OR23100))United States. Dept. of Energy. Division of Materials Sciences and Engineering (MIT/DMSE Salapatas Fellowship)United States. Air Force Office of Scientific Research (Presidential Early Career Award in Science and Engineering (PECASE)

SOI RF-MEMS Based Variable Attenuator for Millimeter-Wave Applications

The most-attractive feature of microelectromechanical systems (MEMS) technology is that it enables the integration of a whole system on a single chip, leading to positive effects on the performance, reliability and cost. MEMS has made it possible to design IC-compatible radio frequency (RF) devices for wireless and satellite communication systems. Recently, with the advent of 5G, there is a huge market pull towards millimeter-wave devices. Variable attenuators are widely employed for adjusting signal levels in high frequency equipment. RF circuits such as automatic gain control amplifiers, broadband vector modulators, full duplex wireless systems, and radar systems are some of the primary applications of variable attenuators. This thesis describes the development of a millimeter-wave RF MEMS-based variable attenuator implemented by monolithically integrating Coplanar Waveguide (CPW) based hybrid couplers with lateral MEMS varactors on a Silicon–on–Insulator (SOI) substrate. The MEMS varactor features a Chevron type electrothermal actuator that controls the lateral movement of a thick plate, allowing precise change in the capacitive loading on a CPW line leading to a change in isolation between input and output. Electrothermal actuators have been employed in the design instead of electrostatic ones because they can generate relatively larger in-line deflection and force within a small footprint. They also provide the advantage of easy integration with other electrical micro-systems on the same chip, since their fabrication process is compatible with general IC fabrication processes. The development of an efficient and reliable actuator has played an important role in the performance of the proposed design of MEMS variable attenuator. A Thermoreflectance (TR) imaging system is used to acquire the surface temperature profiles of the electrothermal actuator employed in the design, so as to study the temperature distribution, displacement and failure analysis of the Chevron actuator. The 60 GHz variable attenuator was developed using a custom fabrication process on an SOI substrate with a device footprint of 3.8 mm x 3.1 mm. The fabrication process has a high yield due to the high-aspect-ratio single-crystal-silicon structures, which are free from warping, pre-deformation and sticking during the wet etching process. The SOI wafer used has a high resistivity (HR) silicon (Si) handle layer that provides an excellent substrate material for RF communication devices at microwave and millimeter wave frequencies. This low-cost fabrication process provides the flexibility to extend this module and implement more complex RF signal conditioning functions. It is thus an appealing candidate for realizing a wide range of reconfigurable RF devices. The measured RF performance of the 60 GHz variable attenuator shows that the device exhibits attenuation levels (|S21|) ranging from 10 dB to 25 dB over a bandwidth of 4 GHz and a return loss of better than 20 dB. The thesis also presents the design and implementation of a MEMS-based impedance tuner on a Silicon-On-Insulator (SOI) substrate. The tuner is comprised of four varactors monolithically integrated with CPW lines. Chevron actuators control the lateral motion of capacitive thick plates used as contactless lateral MEMS varactors, achieving a capacitance range of 0.19 pF to 0.8 pF. The improvement of the Smith chart coverage is achieved by proper choice of the electrical lengths of the CPW lines and precise control of the lateral motion of the capacitive plates. The measured results demonstrate good impedance matching coverage, with an insertion loss of 2.9 dB. The devices presented in this thesis provide repeatable and reliable operation due to their robust, thick-silicon structures. Therefore, they exhibit relatively low residual stress and are free from stiction and micro-welding problems